KR101613180B1 - 서셉터 링 - Google Patents
서셉터 링 Download PDFInfo
- Publication number
- KR101613180B1 KR101613180B1 KR1020117005054A KR20117005054A KR101613180B1 KR 101613180 B1 KR101613180 B1 KR 101613180B1 KR 1020117005054 A KR1020117005054 A KR 1020117005054A KR 20117005054 A KR20117005054 A KR 20117005054A KR 101613180 B1 KR101613180 B1 KR 101613180B1
- Authority
- KR
- South Korea
- Prior art keywords
- plate
- bore
- rib
- susceptor
- ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/187,933 US8394229B2 (en) | 2008-08-07 | 2008-08-07 | Susceptor ring |
| US12/187,933 | 2008-08-07 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20110040967A KR20110040967A (ko) | 2011-04-20 |
| KR101613180B1 true KR101613180B1 (ko) | 2016-04-18 |
Family
ID=41651741
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020117005054A Active KR101613180B1 (ko) | 2008-08-07 | 2009-05-20 | 서셉터 링 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8394229B2 (enExample) |
| JP (1) | JP5605852B2 (enExample) |
| KR (1) | KR101613180B1 (enExample) |
| CN (1) | CN102113109B (enExample) |
| TW (1) | TWI511222B (enExample) |
| WO (1) | WO2010016964A2 (enExample) |
Families Citing this family (277)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8801857B2 (en) * | 2008-10-31 | 2014-08-12 | Asm America, Inc. | Self-centering susceptor ring assembly |
| US9171702B2 (en) * | 2010-06-30 | 2015-10-27 | Lam Research Corporation | Consumable isolation ring for movable substrate support assembly of a plasma processing chamber |
| US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
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| US20130130184A1 (en) * | 2011-11-21 | 2013-05-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and Method for Controlling Wafer Temperature |
| US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
| US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
| US9322097B2 (en) * | 2013-03-13 | 2016-04-26 | Applied Materials, Inc. | EPI base ring |
| TWI648427B (zh) * | 2013-07-17 | 2019-01-21 | 應用材料股份有限公司 | 用於交叉流動類型的熱cvd腔室之改良的氣體活化的結構 |
| US20150083046A1 (en) * | 2013-09-26 | 2015-03-26 | Applied Materials, Inc. | Carbon fiber ring susceptor |
| US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
| US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
| US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
| US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
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| US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
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| TW201007873A (en) | 2010-02-16 |
| CN102113109A (zh) | 2011-06-29 |
| JP5605852B2 (ja) | 2014-10-15 |
| US20100031884A1 (en) | 2010-02-11 |
| WO2010016964A2 (en) | 2010-02-11 |
| WO2010016964A3 (en) | 2010-05-20 |
| KR20110040967A (ko) | 2011-04-20 |
| CN102113109B (zh) | 2013-07-10 |
| TWI511222B (zh) | 2015-12-01 |
| US8394229B2 (en) | 2013-03-12 |
| JP2011530806A (ja) | 2011-12-22 |
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