JP5605852B2 - ワンピースサセプタリング及びリアクタ - Google Patents
ワンピースサセプタリング及びリアクタ Download PDFInfo
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- JP5605852B2 JP5605852B2 JP2011522078A JP2011522078A JP5605852B2 JP 5605852 B2 JP5605852 B2 JP 5605852B2 JP 2011522078 A JP2011522078 A JP 2011522078A JP 2011522078 A JP2011522078 A JP 2011522078A JP 5605852 B2 JP5605852 B2 JP 5605852B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
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- Organic Chemistry (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Description
Claims (14)
- 半導体処理ツールにおいて使用するためのワンピースサセプタリングであって、
形成された開口を有すると共に、前縁及び前記前縁の反対側の後縁を有するプレートと、
前記プレートの下面に一体的に接続され、前記開口の反対側に位置する一対の側面リブと、
一対の前記側面リブそれぞれに形成され、それぞれが内部に温度測定装置を受け入れるように構成される穴と、
前記開口の周囲に配置され、かつ前記プレートの前記下面に接続されると共に前記プレートの前記下面から下方に延びるリングリブと、
前記プレートの前記下面に一体的に接続され、前記側面リブの間に位置する中央リブと、
を備え、
前記穴それぞれは、少なくとも1つの温度測定装置を受け入れるように構成される非貫通穴を形成し、
前記プレートは、前記半導体処理ツールにおいて流体が前記前縁から前記後縁へ向かって流れるように構成され、
前記流体は、前記前縁から前記後縁へ向かって流れた場合に、前記穴それぞれへ侵入できない、ワンピースサセプタリング。 - 前記穴は、円形断面形状を有する、請求項1に記載のワンピースサセプタリング。
- 前記リングリブは、前記プレートの前記下面から2.5mmから25.4mm延びる、請求項1に記載のサセプタリング。
- 前記プレート及び前記側面リブは、グラファイト、炭化ケイ素(SiC)、及びケイ素(Si)からなる群から選択された材料で形成される、請求項1に記載のサセプタリング。
- 前記プレート及び前記側面リブは、炭化ケイ素(SiC)で覆われる、請求項4に記載のサセプタリング。
- 前記プレートの厚みは、2.5mmから25.4mmである、請求項1に記載のサセプタリング。
- 前記一対の側面リブは、長さを有し、前記穴は、前記側面リブの長さの少なくとも半分の長さまで及ぶ、請求項1に記載のサセプタリング。
- 半導体処理ツールにおいて使用するためのワンピースサセプタリングであって、
形成された開口と、上面及び下面と、前縁及び前記前縁の反対側の後縁とを有するプレートと、
前記プレートの前記下面に一体的に接続される第1の側面リブと、
前記第1の側面リブに形成される第1の穴と、
前記プレートの前記下面に一体的に接続される第2の側面リブと、
前記第2の側面リブに形成される第2の穴と、
前記プレートの前記下面に一体的に接続され、前記第1及び第2の側面リブの間に位置する中央リブと、
前記中央リブに形成される第3の穴と、
前記プレートの前記下面に一体的に接続され、前記開口の周囲に位置するリングリブと、を備え、
前記第1の穴、前記第2の穴及び前記第3の穴それぞれは、少なくとも1つの温度測定装置を受け入れるように構成され、
前記プレートは、前記半導体処理ツールにおいて流体が前記前縁から前記後縁へ向かって流れるように構成され、
前記流体は、前記前縁から前記後縁へ向かって流れた場合に、前記穴それぞれへ侵入できない、
ワンピースサセプタリング。 - 前記第1の側面リブ、前記第2の側面リブ及び前記中央リブは、前記リングリブに一体的に接続される、請求項8に記載のワンピースサセプタリング。
- 前記第1の穴、前記第2の穴及び前記第3の穴それぞれは、前記プレートの後縁に隣接して位置する開口を含む、請求項8に記載のワンピースサセプタリング。
- 前記第1の穴、前記第2の穴及び前記第3の穴それぞれの前記開口の反対端は、シールされている、請求項10に記載のワンピースサセプタリング。
- 前記第1の側面リブ、前記第2の側面リブ及び前記中央リブは、線状部材である、請求項8に記載のワンピースサセプタリング。
- 半導体処理ツールのためのリアクタであって、
内部に反応空間を画定し、ガス入口及びガス出口を含む反応チャンバと、
前記反応空間内に配置されるサセプタと、
前記サセプタの周囲に配置されるワンピースサセプタリングであって、前記ワンピースサセプタリングは、前記ガス入口へ向かう前縁と、前記ガス出口へ向かう後縁と、相対する一対の外側縁とを有し、前記ワンピースサセプタリングは、前記後縁から前記前縁へ向かって延びる第1、第2及び第3の穴を含み、前記第1の穴は、前記外側縁の一方と隣接して配置され、前記第2の穴は、前記外側縁の他方と隣接して配置され、前記第3の穴は、前記サセプタの下流縁に隣接する端部を有し、前記各穴は、少なくとも1つの温度測定装置を受け入れるように構成される、ワンピースサセプタリングと、を備え、
前記第1及び第2の穴それぞれは、直線状であり、
前記第1、第2及び第3の穴それぞれは、互いに平行であり、
前記第1、第2及び第3の穴それぞれは、非貫通穴を形成し、
少なくとも1つの前記温度測定装置のそれぞれは、全体的に前記前縁の下流に位置する、リアクタ。 - 前記ワンピースサセプタリングは、
厚みを有するプレートと、
前記厚みを介して形成され、その内部に前記サセプタが配置される、開口と、を備え、
前記第1、第2及び第3の穴それぞれは、前記後縁を介して前記プレート内に形成される、請求項13に記載のリアクタ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/187,933 | 2008-08-07 | ||
US12/187,933 US8394229B2 (en) | 2008-08-07 | 2008-08-07 | Susceptor ring |
PCT/US2009/044734 WO2010016964A2 (en) | 2008-08-07 | 2009-05-20 | Susceptor ring |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011530806A JP2011530806A (ja) | 2011-12-22 |
JP2011530806A5 JP2011530806A5 (ja) | 2012-07-12 |
JP5605852B2 true JP5605852B2 (ja) | 2014-10-15 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011522078A Active JP5605852B2 (ja) | 2008-08-07 | 2009-05-20 | ワンピースサセプタリング及びリアクタ |
Country Status (6)
Country | Link |
---|---|
US (1) | US8394229B2 (ja) |
JP (1) | JP5605852B2 (ja) |
KR (1) | KR101613180B1 (ja) |
CN (1) | CN102113109B (ja) |
TW (1) | TWI511222B (ja) |
WO (1) | WO2010016964A2 (ja) |
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US20100031884A1 (en) | 2010-02-11 |
KR101613180B1 (ko) | 2016-04-18 |
WO2010016964A3 (en) | 2010-05-20 |
KR20110040967A (ko) | 2011-04-20 |
TW201007873A (en) | 2010-02-16 |
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