JP2007518249A - 半導体製造時にウェハを支持するホルダ - Google Patents
半導体製造時にウェハを支持するホルダ Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
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Abstract
【選択図】図3
Description
本出願の原出願は、2003年8月1日に出願された「半導体製造期間中にウェハを支持するサセプタ(SUSCEPTOR FOR SUPPORTING WAFERS DURING SEMICONDUCTOR MANUFACTURE)」と題する米国仮特許出願第60/492063号の恩典を受ける資格を有し、優先権を主張するものであり、その全体を参照用に本願明細書に取り込むものである。
Claims (46)
- 化学蒸着システムにおいて半導体基板ウェハを保持するウェハホルダであって、
上面を有するホルダ本体と、
前記ホルダ本体上面の円形ウェハ凹部であって、外周縁部と内部領域を有するウェハ凹部と、
前記ホルダ本体の前記上面内に配置した複数の溝穴であって、各々が前記ウェハ凹部の前記外周縁部に隣接して始まり、前記ウェハ凹部の前記内部領域へ向け延び、そこで終端する溝穴とを備えることを特徴とするウェハホルダ。 - 前記ウェハ凹部の外周縁部周りに延びる環状溝を更に備える請求項1記載のウェハホルダ。
- 前記溝穴の全てを、前記環状溝から前記ウェハ凹部の内部領域へ向け半径方向に延ばした請求項2記載のウェハホルダ。
- 前記ホルダ本体は、黒鉛、シリコン、窒化珪素、炭化珪素、水晶および酸化アルミニウムの少なくとも一つからなる請求項3記載のウェハホルダ。
- 前記ホルダ本体の少なくとも上面に表面被覆を付した請求項3記載のウェハホルダ。
- 前記表面被覆は、炭化珪素、窒化珪素、熱分解性黒鉛、熱分解性カーボン、ダイヤモンド、窒化アルミニウム、酸化アルミニウム、二酸化硅素および炭化タンタルのうちの少なくとも一つからなる請求項5記載のウェハホルダ。
- 前記ウェハ凹部が凹面を囲繞する請求項3記載のウェハホルダ。
- 前記ウェハ凹部の凹面が、ウェハ凹部内に配置する基板ウェハ下側のガス流を支援する請求項7記載のウェハホルダ。
- 前記ウェハ凹部の前記凹面が、前記ウェハ凹部内に配置する基板ウェハの表面を横断する一様な温度特性の維持に役立つ請求項7記載のウェハホルダ。
- 前記溝穴の数が、ウェハ凹部内に配置する基板ウェハの熱特性に対する負の効果を最小化するよう選択された請求項3記載のウェハホルダ。
- 前記溝穴の数が、基板ウェハ下側に十分なガス流を可能にして適切な着脱操作を支援するように選択された請求項3記載のウェハホルダ。
- 前記溝穴の寸法が、前記ウェハ凹部内に配置する基板ウェハの温度特性又は背面痕跡に対する負の影響を最小化するよう選択された請求項3記載のウェハホルダ。
- 前記溝穴の寸法が、着脱操作の支援目的で基板ウェハ下側に効果的ガス流を供給するよう選択された請求項3記載のウェハホルダ。
- 前記複数の溝穴の各々は長さが0.076〜2.54cmである請求項3記載のウェハホルダ。
- 前記複数の溝穴の各々が、0.09〜0.165cmの長さを持つ請求項14記載のウェハホルダ。
- 前記複数の溝穴の各々が、0.03〜0.076cmの幅を持つ請求項3記載のウェハホルダ。
- 前記複数の溝穴の各々が、0.038〜0.06cmの幅を持つ請求項16記載のウェハホルダ。
- 前記複数の溝穴の各々が、少なくとも0.003cmの深さを持つ請求項3記載のウェハホルダ。
- 前記複数の溝穴の各々が、0.01〜0.02cmの深さを持つ請求項18記載のウェハホルダ。
- 前記ウェハホルダがサセプタである請求項3記載のウェハホルダ。
- 前記ウェハ端を支持する周縁隆起を更に備える請求項3記載のウェハホルダ。
- 前記複数の溝穴が、周縁隆起内に少なくとも一部配置された請求項21記載のウェハホルダ。
- 前記ウェハ凹部は第1のウェハ凹部であり、複数の溝穴は第1の複数の溝穴であり、前記ウェハホルダが更に、
前記第1の円形ウェハ凹部に隣接する前記ホルダの前記上面内の第2の円形ウェハ凹部で、外周縁部と内部領域を有する前記ウェハ凹部と、
前記ホルダ本体の前記上面に配置した第2の複数の溝穴で、各々が前記第2のウェハ凹部の前記外周縁部に隣接して始まり前記第2のウェハ凹部の前記内部領域へ向け延びてそこで終端された前記溝穴とを備える請求項3記載のウェハホルダ。 - 化学蒸着システム内に半導体基板ウェハを保持するウェハホルダであって、
上面を有するホルダ本体と、
前記ホルダ本体の上面内の円形ウェハ凹部で、外周縁部と内部領域とを有する前記ウェハ凹部と、
前記ホルダ本体の上面内に配置した複数の非交差溝穴で、各々が前記ウェハ凹部の前記外周縁部に隣接して始まり前記ウェハ凹部の前記内部領域へ向け延びてそこで終端する溝穴とを備えることを特徴とするウェハホルダ。 - 前記ウェハ凹部の外周縁部周りを延びる環状溝を更に備える請求項24記載のウェハホルダ。
- 前記溝穴の全てを前記環状溝から前記ウェハ凹部の前記内部領域へ向かって半径方向に延ばした請求項25記載のウェハホルダ。
- 前記ホルダ本体が、黒鉛、シリコン、窒化珪素、炭化珪素、クォーツおよび酸化アルミニウムの少なくとも一つから形成された請求項26記載のウェハホルダ。
- 少なくともホルダ本体の上面に表面被覆を付した請求項26記載のウェハホルダ。
- 前記表面被覆が、炭化珪素、窒化珪素、熱分解性黒鉛、熱分解性カーボンかダイヤモンド、窒化アルミニウム、酸化アルミニウムおよび二酸化硅素か炭化タンタルのうちの少なくとも一つからなる請求項28記載のウェハホルダ。
- 前記ウェハ凹部が凹面を囲繞する請求項26記載のウェハホルダ。
- 前記ウェハ凹部の前記凹面が、ウェハ凹部内に配置する基板ウェハ下側のガス流を支援する請求項30記載のウェハホルダ。
- 前記ウェハ凹部の凹面が、前記ウェハ凹部内に配置する基板ウェハの表面を横断して一様な温度特性を維持する請求項30記載のウェハホルダ。
- 前記溝穴の数が、ウェハ凹部内に配置する基板ウェハの温度特性に対する負の影響を最小化するよう選択された請求項26記載のウェハホルダ。
- 前記溝穴の数が、適切な着脱操作を支援するよう基板ウェハ下側に十分なガス流を可能にするよう選択された請求項26記載のウェハホルダ。
- 前記溝穴の寸法が、ウェハ凹部内に配置する基板ウェハの温度特性又は背面痕跡に対する負の影響を最小化するよう選択された請求項26記載のウェハホルダ。
- 前記溝穴の寸法が、適切な着脱操作を支援する目的で基板ウェハ下側に有効なガス流を供給するよう選択された請求項26記載のウェハホルダ。
- 前記複数の溝穴の長さが、各々0.076〜2.54cmである請求項26記載のウェハホルダ。
- 前記複数の溝穴の長さが、各々0.09〜0.165cmである請求項37記載のウェハホルダ。
- 前記複数の溝穴の幅が、各々0.003〜0.076cmである請求項26記載のウェハホルダ。
- 前記複数の溝穴の幅が、各々0.04〜0.06cmで請求項39記載のウェハホルダ。
- 前記複数の溝穴の深さが、各々少なくとも0.003cmである請求項26記載のウェハホルダ。
- 前記複数の溝穴の深さが、各々0.01〜0.02cmである請求項41記載のウェハホルダ。
- 前記ウェハホルダがサセプタである請求項26記載のウェハホルダ。
- ウェハの端部を支える周縁隆起を更に備える請求項26記載のウェハホルダ。
- 前記複数の溝穴を、周縁隆起内に少なくとも一部配置した請求項44記載のウェハホルダ。
- 前記ウェハ凹部は第1のウェハ凹部であり、複数の溝穴は第1の複数の溝穴であり、前記ウェハホルダが更に、
前記第1の円形ウェハ凹部に隣接する前記ホルダの前記上面内の第2の円形ウェハ凹部で、外周縁部と内部領域を有するウェハ凹部と、
前記ホルダ本体の上面に配置した第2の複数の溝穴で、各々が前記第2のウェハ凹部の前記外周縁部に隣接して始まり前記第2のウェハ凹部の内部領域へ向け延び、そこで終端する溝穴とを備える請求項26記載のウェハホルダ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US49206303P | 2003-08-01 | 2003-08-01 | |
PCT/US2004/024787 WO2005013334A2 (en) | 2003-08-01 | 2004-08-02 | Holder for supporting wafers during semiconductor manufacture |
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JP2007518249A true JP2007518249A (ja) | 2007-07-05 |
JP4669476B2 JP4669476B2 (ja) | 2011-04-13 |
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Application Number | Title | Priority Date | Filing Date |
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JP2006522644A Expired - Fee Related JP4669476B2 (ja) | 2003-08-01 | 2004-08-02 | 半導体製造時にウェハを支持するホルダ |
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US (1) | US7582166B2 (ja) |
EP (1) | EP1654752B1 (ja) |
JP (1) | JP4669476B2 (ja) |
KR (1) | KR101116510B1 (ja) |
AT (1) | ATE514801T1 (ja) |
WO (1) | WO2005013334A2 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009111296A (ja) * | 2007-10-31 | 2009-05-21 | Sumco Corp | エピタキシャル膜形成装置用のサセプタ、エピタキシャル膜形成装置、エピタキシャルウェーハ及びエピタキシャルウェーハの製造方法 |
JP2012109409A (ja) * | 2010-11-17 | 2012-06-07 | Ulvac Japan Ltd | 基板搬送トレイ |
KR20140056268A (ko) * | 2011-07-29 | 2014-05-09 | 어플라이드 머티어리얼스, 인코포레이티드 | 소크 성능을 개선하기 위한 코팅을 갖는 기판 지지 엣지 링 |
JP2020509984A (ja) * | 2017-02-28 | 2020-04-02 | エスジーエル・カーボン・エスイー | 基板キャリア構造体 |
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Also Published As
Publication number | Publication date |
---|---|
ATE514801T1 (de) | 2011-07-15 |
JP4669476B2 (ja) | 2011-04-13 |
WO2005013334A3 (en) | 2007-08-09 |
US20050022746A1 (en) | 2005-02-03 |
EP1654752A2 (en) | 2006-05-10 |
WO2005013334A2 (en) | 2005-02-10 |
EP1654752A4 (en) | 2010-07-21 |
EP1654752B1 (en) | 2011-06-29 |
KR101116510B1 (ko) | 2012-02-28 |
US7582166B2 (en) | 2009-09-01 |
KR20060083410A (ko) | 2006-07-20 |
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