ATE513311T1 - Suszeptor und verfahren zur herstellung einer led-vorrichtung mit diesem suszeptor - Google Patents
Suszeptor und verfahren zur herstellung einer led-vorrichtung mit diesem suszeptorInfo
- Publication number
- ATE513311T1 ATE513311T1 AT07868710T AT07868710T ATE513311T1 AT E513311 T1 ATE513311 T1 AT E513311T1 AT 07868710 T AT07868710 T AT 07868710T AT 07868710 T AT07868710 T AT 07868710T AT E513311 T1 ATE513311 T1 AT E513311T1
- Authority
- AT
- Austria
- Prior art keywords
- sussceptor
- producing
- led device
- susceptor
- recess
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
Landscapes
- Led Devices (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US86522106P | 2006-11-10 | 2006-11-10 | |
| PCT/US2007/084261 WO2008058270A2 (en) | 2006-11-10 | 2007-11-09 | A susceptor and method of forming a led device using such susceptor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE513311T1 true ATE513311T1 (de) | 2011-07-15 |
Family
ID=39324157
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT07868710T ATE513311T1 (de) | 2006-11-10 | 2007-11-09 | Suszeptor und verfahren zur herstellung einer led-vorrichtung mit diesem suszeptor |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20080110402A1 (de) |
| EP (1) | EP2080221B1 (de) |
| JP (1) | JP2010509778A (de) |
| CN (1) | CN101563771A (de) |
| AT (1) | ATE513311T1 (de) |
| WO (1) | WO2008058270A2 (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20120101633A (ko) * | 2009-10-14 | 2012-09-14 | 아사히 가라스 가부시키가이샤 | 반도체 제조용 지그 및 그의 제조 방법 |
| US20140256082A1 (en) * | 2013-03-07 | 2014-09-11 | Jehad A. Abushama | Method and apparatus for the formation of copper-indiumgallium selenide thin films using three dimensional selective rf and microwave rapid thermal processing |
| US10490437B2 (en) * | 2015-04-07 | 2019-11-26 | Sumco Corporation | Susceptor, vapor deposition apparatus, vapor deposition method and epitaxial silicon wafer |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3951587A (en) * | 1974-12-06 | 1976-04-20 | Norton Company | Silicon carbide diffusion furnace components |
| JPS5366164A (en) * | 1976-11-26 | 1978-06-13 | Hitachi Ltd | Susceptor for semiconductor wafer processing |
| US4795673A (en) * | 1978-01-09 | 1989-01-03 | Stemcor Corporation | Composite material of discontinuous silicon carbide particles and continuous silicon matrix and method of producing same |
| US4633051A (en) * | 1983-11-23 | 1986-12-30 | Advanced Semiconductor Materials America, Inc. | Stable conductive elements for direct exposure to reactive environments |
| JPS6169116A (ja) * | 1984-09-13 | 1986-04-09 | Toshiba Ceramics Co Ltd | シリコンウエハ−の連続cvdコ−テイング用サセプター |
| JPS6447019A (en) * | 1987-08-18 | 1989-02-21 | Denki Kagaku Kogyo Kk | Glassy carbon coated susceptor |
| JPH06287091A (ja) * | 1993-02-02 | 1994-10-11 | Ngk Insulators Ltd | SiC含有遠赤外線放射体、乾燥装置及び焼成装置 |
| JPH0758041A (ja) * | 1993-08-20 | 1995-03-03 | Toshiba Ceramics Co Ltd | サセプタ |
| US5837058A (en) * | 1996-07-12 | 1998-11-17 | Applied Materials, Inc. | High temperature susceptor |
| JPH10233529A (ja) * | 1997-02-14 | 1998-09-02 | Hewlett Packard Co <Hp> | 窒化物半導体素子およびその製造方法 |
| US6026589A (en) * | 1998-02-02 | 2000-02-22 | Silicon Valley Group, Thermal Systems Llc | Wafer carrier and semiconductor apparatus for processing a semiconductor substrate |
| US6162543A (en) * | 1998-12-11 | 2000-12-19 | Saint-Gobain Industrial Ceramics, Inc. | High purity siliconized silicon carbide having high thermal shock resistance |
| US6673198B1 (en) * | 1999-12-22 | 2004-01-06 | Lam Research Corporation | Semiconductor processing equipment having improved process drift control |
| WO2002047129A1 (en) * | 2000-12-05 | 2002-06-13 | Ibiden Co., Ltd. | Ceramic substrate for semiconductor manufacturing and inspecting devices, and method of manufacturing the ceramic substrate |
| JP3922018B2 (ja) * | 2001-12-21 | 2007-05-30 | 株式会社Sumco | 気相成長装置および気相成長装置の温度検出方法 |
| US7394043B2 (en) * | 2002-04-24 | 2008-07-01 | Sumitomo Electric Industries, Ltd. | Ceramic susceptor |
| US7255775B2 (en) * | 2002-06-28 | 2007-08-14 | Toshiba Ceramics Co., Ltd. | Semiconductor wafer treatment member |
| JP4278441B2 (ja) * | 2002-06-28 | 2009-06-17 | コバレントマテリアル株式会社 | 半導体ウエハ処理用部材 |
| US7256375B2 (en) * | 2002-08-30 | 2007-08-14 | Asm International N.V. | Susceptor plate for high temperature heat treatment |
| EP1654752B1 (de) * | 2003-08-01 | 2011-06-29 | SGL Carbon SE | Halter zum tragen von wafern während der halbleiterherstellung |
| JP4556034B2 (ja) * | 2004-03-10 | 2010-10-06 | 学校法人 名城大学 | Iii族窒化物半導体の作製方法 |
| US20060060145A1 (en) * | 2004-09-17 | 2006-03-23 | Van Den Berg Jannes R | Susceptor with surface roughness for high temperature substrate processing |
| US7632609B2 (en) * | 2005-10-24 | 2009-12-15 | Shin-Etsu Chemical Co., Ltd. | Fabrication method of photomask-blank |
-
2007
- 2007-11-09 US US11/938,085 patent/US20080110402A1/en not_active Abandoned
- 2007-11-09 CN CNA200780041923XA patent/CN101563771A/zh active Pending
- 2007-11-09 AT AT07868710T patent/ATE513311T1/de not_active IP Right Cessation
- 2007-11-09 EP EP07868710A patent/EP2080221B1/de not_active Not-in-force
- 2007-11-09 JP JP2009536510A patent/JP2010509778A/ja active Pending
- 2007-11-09 WO PCT/US2007/084261 patent/WO2008058270A2/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2008058270A2 (en) | 2008-05-15 |
| CN101563771A (zh) | 2009-10-21 |
| JP2010509778A (ja) | 2010-03-25 |
| EP2080221B1 (de) | 2011-06-15 |
| EP2080221A2 (de) | 2009-07-22 |
| US20080110402A1 (en) | 2008-05-15 |
| WO2008058270A3 (en) | 2008-07-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |