JP4556034B2 - Iii族窒化物半導体の作製方法 - Google Patents
Iii族窒化物半導体の作製方法 Download PDFInfo
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- JP4556034B2 JP4556034B2 JP2004067457A JP2004067457A JP4556034B2 JP 4556034 B2 JP4556034 B2 JP 4556034B2 JP 2004067457 A JP2004067457 A JP 2004067457A JP 2004067457 A JP2004067457 A JP 2004067457A JP 4556034 B2 JP4556034 B2 JP 4556034B2
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- Prior art keywords
- iii nitride
- group iii
- nitride semiconductor
- substrate
- aln
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- 150000004767 nitrides Chemical class 0.000 title claims description 43
- 239000004065 semiconductor Substances 0.000 title claims description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 238000000034 method Methods 0.000 title claims description 19
- 239000000758 substrate Substances 0.000 claims description 50
- 229910052594 sapphire Inorganic materials 0.000 claims description 14
- 239000010980 sapphire Substances 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 description 14
- 230000005684 electric field Effects 0.000 description 12
- 239000013078 crystal Substances 0.000 description 11
- 239000007789 gas Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 8
- 230000005669 field effect Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000000151 deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 230000005533 two-dimensional electron gas Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910010093 LiAlO Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Junction Field-Effect Transistors (AREA)
Description
c軸より8°以上傾斜した方位に配向した主面を有するサファイア基板または4H-SiC基板(以下、単にSiC基板ともいう)を準備する工程と、
Bを含む雰囲気において成膜処理を実行し、前記基板上にAlxGa1-x-yInyN(0≦x,y、1-x-y≦1)なる組成成分を主成分として含み、かつBを1原子%未満で含むIII族窒化物半導体を、そのc軸より8°以上傾斜した方位に配向するようにして形成する工程と、
を具えることを特徴とする、III族窒化物半導体の作製方法に関する。
本実施例では、図3に示すような作製装置を用いてIII族窒化物半導体の作製を実施した。最初に、(10-12)面サファイア基板を準備し、このサファイア基板上に450℃で厚さ25nmのAlNを形成し、さらに前記AlN上に1050℃で厚さ2.0μmのGaNを形成した。なお、B供給源として、単結晶のZrB2をサファイア基板上流側に近接して、配置した。
B供給源を使用しなかった以外は、実施例1と同様にして、(10-12)面サファイア基板
上に厚さ2.5nmのAlN及び2.0μmnmのGaNを形成した。
本実施例では、図3に示すような作製装置を用いてIII族窒化物半導体の作製を実施した。最初に、(30-38)面に配向した主面を有する4H-SiC基板を準備し、このSiC基板上に、実施例1と同じ条件で、厚さ300nmのAlN及び厚さ2.0μmのGaNを形成した。
B供給源を使用しなかった以外は、実施例2と同様にして、(30-38)面に配向した主面を有する4H-SiC基板上に厚さ300nmのAlN及び2.0μmのGaNを形成した。
302 B供給源
303 サセプタ
304 成膜容器
Claims (1)
- c軸より8°以上傾斜した方位に配向した主面を有するサファイア基板または4H-SiC基板を準備する工程と、
Bを含む雰囲気において成膜処理を実行し、前記基板上に、AlxGa1-x-yInyN(0≦x,y、1-x-y≦1)なる組成成分を主成分として含み、かつBを1原子%未満で含むIII族窒化物半導体を、そのc軸より8°以上傾斜した方位に配向するようにして形成する工程と、
を具えることを特徴とする、III族窒化物半導体の作製方法。
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JP2004067457A JP4556034B2 (ja) | 2004-03-10 | 2004-03-10 | Iii族窒化物半導体の作製方法 |
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JP2004067457A JP4556034B2 (ja) | 2004-03-10 | 2004-03-10 | Iii族窒化物半導体の作製方法 |
Related Child Applications (1)
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JP2010024715A Division JP5376458B2 (ja) | 2010-02-05 | 2010-02-05 | Iii族窒化物半導体 |
Publications (2)
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JP2005255440A JP2005255440A (ja) | 2005-09-22 |
JP4556034B2 true JP4556034B2 (ja) | 2010-10-06 |
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JP2004067457A Expired - Lifetime JP4556034B2 (ja) | 2004-03-10 | 2004-03-10 | Iii族窒化物半導体の作製方法 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101563771A (zh) * | 2006-11-10 | 2009-10-21 | 圣戈本陶瓷及塑料股份有限公司 | 衬托器和使用该衬托器形成led器件的方法 |
JP2016184663A (ja) * | 2015-03-26 | 2016-10-20 | 株式会社豊田中央研究所 | 半導体ウエハ、半導体装置及び半導体ウエハの製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07226379A (ja) * | 1994-02-15 | 1995-08-22 | Sumitomo Electric Ind Ltd | 気相成長用ウエハトレー及び化合物半導体の製造方法 |
JPH08239752A (ja) * | 1995-03-01 | 1996-09-17 | Sumitomo Electric Ind Ltd | ホウ素含有窒化アルミニウム薄膜および製造方法 |
JP2002176331A (ja) * | 2000-09-27 | 2002-06-21 | Seiko Epson Corp | 表面弾性波素子、周波数フィルタ、周波数発振器、電子回路、及び電子機器 |
JP2002305155A (ja) * | 2001-04-09 | 2002-10-18 | Nikko Materials Co Ltd | GaN系化合物半導体結晶の結晶成長装置 |
-
2004
- 2004-03-10 JP JP2004067457A patent/JP4556034B2/ja not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07226379A (ja) * | 1994-02-15 | 1995-08-22 | Sumitomo Electric Ind Ltd | 気相成長用ウエハトレー及び化合物半導体の製造方法 |
JPH08239752A (ja) * | 1995-03-01 | 1996-09-17 | Sumitomo Electric Ind Ltd | ホウ素含有窒化アルミニウム薄膜および製造方法 |
JP2002176331A (ja) * | 2000-09-27 | 2002-06-21 | Seiko Epson Corp | 表面弾性波素子、周波数フィルタ、周波数発振器、電子回路、及び電子機器 |
JP2002305155A (ja) * | 2001-04-09 | 2002-10-18 | Nikko Materials Co Ltd | GaN系化合物半導体結晶の結晶成長装置 |
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