DE60231008D1 - Verfahren zur abscheidung von siliciumoxid und siliciumoxidnitrid mittels einzelwafer-niederdruck-cvd - Google Patents

Verfahren zur abscheidung von siliciumoxid und siliciumoxidnitrid mittels einzelwafer-niederdruck-cvd

Info

Publication number
DE60231008D1
DE60231008D1 DE60231008T DE60231008T DE60231008D1 DE 60231008 D1 DE60231008 D1 DE 60231008D1 DE 60231008 T DE60231008 T DE 60231008T DE 60231008 T DE60231008 T DE 60231008T DE 60231008 D1 DE60231008 D1 DE 60231008D1
Authority
DE
Germany
Prior art keywords
siliconoxide
nitride
deposition
silicon oxide
low pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60231008T
Other languages
English (en)
Inventor
Janardhanan Anand Subramony
Yoshitaka Yokota
Ramaseshan Suryanarayan Iyer
Lee Luo
Aihua Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE60231008D1 publication Critical patent/DE60231008D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45512—Premixing before introduction in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/308—Oxynitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
DE60231008T 2001-12-28 2002-12-19 Verfahren zur abscheidung von siliciumoxid und siliciumoxidnitrid mittels einzelwafer-niederdruck-cvd Expired - Fee Related DE60231008D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/041,026 US6713127B2 (en) 2001-12-28 2001-12-28 Methods for silicon oxide and oxynitride deposition using single wafer low pressure CVD
PCT/US2002/040867 WO2003057942A1 (en) 2001-12-28 2002-12-19 Methods for silicon oxide and oxynitride deposition using single wafer low pressure cvd

Publications (1)

Publication Number Publication Date
DE60231008D1 true DE60231008D1 (de) 2009-03-12

Family

ID=21914312

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60231008T Expired - Fee Related DE60231008D1 (de) 2001-12-28 2002-12-19 Verfahren zur abscheidung von siliciumoxid und siliciumoxidnitrid mittels einzelwafer-niederdruck-cvd

Country Status (8)

Country Link
US (1) US6713127B2 (de)
EP (1) EP1470264B1 (de)
JP (1) JP4408699B2 (de)
KR (2) KR100990012B1 (de)
CN (1) CN100392148C (de)
AU (1) AU2002360700A1 (de)
DE (1) DE60231008D1 (de)
WO (1) WO2003057942A1 (de)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020127763A1 (en) * 2000-12-28 2002-09-12 Mohamed Arafa Sidewall spacers and methods of making same
US6709928B1 (en) * 2001-07-31 2004-03-23 Cypress Semiconductor Corporation Semiconductor device having silicon-rich layer and method of manufacturing such a device
JP3886424B2 (ja) * 2001-08-28 2007-02-28 鹿児島日本電気株式会社 基板処理装置及び方法
US7094707B1 (en) * 2002-05-13 2006-08-22 Cypress Semiconductor Corporation Method of forming nitrided oxide in a hot wall single wafer furnace
TW200424343A (en) * 2002-09-05 2004-11-16 Asml Us Inc Low temperature deposition of silicon based thin films by single-wafer hot-wall rapid thermal chemical vapor deposition
US7335609B2 (en) * 2004-08-27 2008-02-26 Applied Materials, Inc. Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials
US7141483B2 (en) * 2002-09-19 2006-11-28 Applied Materials, Inc. Nitrous oxide anneal of TEOS/ozone CVD for improved gapfill
US7456116B2 (en) * 2002-09-19 2008-11-25 Applied Materials, Inc. Gap-fill depositions in the formation of silicon containing dielectric materials
US7431967B2 (en) * 2002-09-19 2008-10-07 Applied Materials, Inc. Limited thermal budget formation of PMD layers
US20070212850A1 (en) * 2002-09-19 2007-09-13 Applied Materials, Inc. Gap-fill depositions in the formation of silicon containing dielectric materials
JP4034197B2 (ja) * 2003-01-31 2008-01-16 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
KR100505064B1 (ko) * 2003-05-06 2005-07-29 삼성전자주식회사 반도체 소자의 산화방법 및 이를 이용한 산화막 형성방법
US7202186B2 (en) * 2003-07-31 2007-04-10 Tokyo Electron Limited Method of forming uniform ultra-thin oxynitride layers
KR101246499B1 (ko) * 2003-08-25 2013-03-25 가부시키가이샤 알박 산화물 박막 제조 방법 및 그 제조 장치
US20050186339A1 (en) * 2004-02-20 2005-08-25 Applied Materials, Inc., A Delaware Corporation Methods and apparatuses promoting adhesion of dielectric barrier film to copper
DE102004015174A1 (de) * 2004-03-27 2005-10-13 Aixtron Ag Verfahren zum Abscheiden von insbesondere Metalloxiden mittels nicht kontinuierlicher Precursorinjektion
KR20050115634A (ko) * 2004-06-04 2005-12-08 삼성전자주식회사 플라즈마 강화 화학기상증착설비를 이용한 화학기상증착방법
KR20060012703A (ko) * 2004-08-04 2006-02-09 주식회사 유진테크 반도체 기판상에 싱글 챔버식 화학 기상 증착를 이용한 열산화막 증착장치 및 그 증착방법
US20070212847A1 (en) * 2004-08-04 2007-09-13 Applied Materials, Inc. Multi-step anneal of thin films for film densification and improved gap-fill
US7642171B2 (en) * 2004-08-04 2010-01-05 Applied Materials, Inc. Multi-step anneal of thin films for film densification and improved gap-fill
JP4613587B2 (ja) * 2004-08-11 2011-01-19 株式会社明電舎 酸化膜形成方法とその装置
JP2006140408A (ja) * 2004-11-15 2006-06-01 Sharp Corp 半導体装置のトレンチ素子分離方法
US7338894B2 (en) * 2005-01-26 2008-03-04 Freescale Semiconductor, Inc. Semiconductor device having nitridated oxide layer and method therefor
US7361567B2 (en) * 2005-01-26 2008-04-22 Freescale Semiconductor, Inc. Non-volatile nanocrystal memory and method therefor
KR100625945B1 (ko) * 2005-06-30 2006-09-18 매그나칩 반도체 유한회사 씨모스 이미지 센서의 포토다이오드 제조 방법
US7294581B2 (en) * 2005-10-17 2007-11-13 Applied Materials, Inc. Method for fabricating silicon nitride spacer structures
US7465669B2 (en) * 2005-11-12 2008-12-16 Applied Materials, Inc. Method of fabricating a silicon nitride stack
US7416995B2 (en) * 2005-11-12 2008-08-26 Applied Materials, Inc. Method for fabricating controlled stress silicon nitride films
KR100668745B1 (ko) * 2005-12-29 2007-01-29 주식회사 하이닉스반도체 반도체 소자의 트랜지스터 형성 방법
US7767588B2 (en) * 2006-02-28 2010-08-03 Freescale Semiconductor, Inc. Method for forming a deposited oxide layer
US8475625B2 (en) * 2006-05-03 2013-07-02 Applied Materials, Inc. Apparatus for etching high aspect ratio features
US8440049B2 (en) 2006-05-03 2013-05-14 Applied Materials, Inc. Apparatus for etching high aspect ratio features
US7445984B2 (en) 2006-07-25 2008-11-04 Freescale Semiconductor, Inc. Method for removing nanoclusters from selected regions
US7432158B1 (en) 2006-07-25 2008-10-07 Freescale Semiconductor, Inc. Method for retaining nanocluster size and electrical characteristics during processing
US8119477B2 (en) * 2006-08-31 2012-02-21 Spansion Llc Memory system with protection layer to cover the memory gate stack and methods for forming same
KR100800377B1 (ko) * 2006-09-07 2008-02-01 삼성전자주식회사 화학기상증착설비
US20080119059A1 (en) * 2006-11-20 2008-05-22 Smith Jacob W Low thermal budget chemical vapor deposition processing
US8030114B2 (en) * 2007-01-31 2011-10-04 Taiwan Semiconductor Manufacturing Company, Ltd. Method and structure to reduce dark current in image sensors
US8633537B2 (en) 2007-05-25 2014-01-21 Cypress Semiconductor Corporation Memory transistor with multiple charge storing layers and a high work function gate electrode
US8283261B2 (en) 2007-05-25 2012-10-09 Cypress Semiconductor Corporation Radical oxidation process for fabricating a nonvolatile charge trap memory device
US20090179253A1 (en) 2007-05-25 2009-07-16 Cypress Semiconductor Corporation Oxide-nitride-oxide stack having multiple oxynitride layers
US9449831B2 (en) 2007-05-25 2016-09-20 Cypress Semiconductor Corporation Oxide-nitride-oxide stack having multiple oxynitride layers
US8940645B2 (en) 2007-05-25 2015-01-27 Cypress Semiconductor Corporation Radical oxidation process for fabricating a nonvolatile charge trap memory device
US8643124B2 (en) 2007-05-25 2014-02-04 Cypress Semiconductor Corporation Oxide-nitride-oxide stack having multiple oxynitride layers
US20090061608A1 (en) * 2007-08-29 2009-03-05 Merchant Tushar P Method of forming a semiconductor device having a silicon dioxide layer
KR100929741B1 (ko) 2007-11-20 2009-12-03 주식회사 동부하이텍 이미지 센서 및 그 제조 방법
KR101478189B1 (ko) * 2007-11-19 2015-01-02 삼성전자주식회사 이미지 센서의 제조 방법
US7898852B1 (en) 2007-12-27 2011-03-01 Cypress Semiconductor Corporation Trapped-charge non-volatile memory with uniform multilevel programming
US8066895B2 (en) * 2008-02-28 2011-11-29 Applied Materials, Inc. Method to control uniformity using tri-zone showerhead
US8088683B2 (en) * 2008-03-31 2012-01-03 Cypress Semiconductor Corporation Sequential deposition and anneal of a dielectic layer in a charge trapping memory device
US20100178758A1 (en) * 2009-01-15 2010-07-15 Macronix International Co., Ltd. Methods for fabricating dielectric layer and non-volatile memory
US9064693B2 (en) 2010-03-01 2015-06-23 Kirsteen Mgmt. Group Llc Deposition of thin film dielectrics and light emitting nano-layer structures
CN102011105B (zh) * 2010-10-12 2014-06-04 上海宏力半导体制造有限公司 低压淀积氧化硅工艺方法
KR101288130B1 (ko) * 2011-07-13 2013-07-19 삼성디스플레이 주식회사 기상 증착 장치, 기상 증착 방법 및 유기 발광 표시 장치 제조 방법
US8685813B2 (en) 2012-02-15 2014-04-01 Cypress Semiconductor Corporation Method of integrating a charge-trapping gate stack into a CMOS flow
JP5922542B2 (ja) * 2012-09-19 2016-05-24 東京エレクトロン株式会社 積層膜の形成方法およびその形成装置
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
WO2018052471A1 (en) * 2016-09-14 2018-03-22 Applied Materials, Inc. A degassing chamber for arsenic related processes
WO2021097022A1 (en) * 2019-11-12 2021-05-20 Applied Materials, Inc. Silyl pseudohalides for silicon containing films
CN113496869A (zh) * 2020-04-03 2021-10-12 重庆超硅半导体有限公司 一种外延基底用硅晶片之背面膜层及制造方法
CN115513103A (zh) * 2022-11-23 2022-12-23 西安奕斯伟材料科技有限公司 用于对硅片进行背封的设备

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1151746A (en) * 1965-12-27 1969-05-14 Matsushita Electronics Corp A method for the Deposition of Silica Films
US4217375A (en) * 1977-08-30 1980-08-12 Bell Telephone Laboratories, Incorporated Deposition of doped silicon oxide films
JPH01260833A (ja) * 1988-04-11 1989-10-18 Fujitsu Ltd 絶縁膜の気相成長方法
US5387557A (en) * 1991-10-23 1995-02-07 F. T. L. Co., Ltd. Method for manufacturing semiconductor devices using heat-treatment vertical reactor with temperature zones
US5648175A (en) * 1996-02-14 1997-07-15 Applied Materials, Inc. Chemical vapor deposition reactor system and integrated circuit
US5709772A (en) * 1996-03-29 1998-01-20 Applied Materials, Inc. Non-plasma halogenated gas flow to prevent metal residues
US5849644A (en) * 1996-08-13 1998-12-15 Micron Technology, Inc. Semiconductor processing methods of chemical vapor depositing SiO2 on a substrate
US6258170B1 (en) * 1997-09-11 2001-07-10 Applied Materials, Inc. Vaporization and deposition apparatus
US6185839B1 (en) * 1998-05-28 2001-02-13 Applied Materials, Inc. Semiconductor process chamber having improved gas distributor
US5976991A (en) * 1998-06-11 1999-11-02 Air Products And Chemicals, Inc. Deposition of silicon dioxide and silicon oxynitride using bis(tertiarybutylamino) silane
US6060132A (en) * 1998-06-15 2000-05-09 Siemens Aktiengesellschaft High density plasma CVD process for making dielectric anti-reflective coatings
US6465044B1 (en) * 1999-07-09 2002-10-15 Silicon Valley Group, Thermal Systems Llp Chemical vapor deposition of silicon oxide films using alkylsiloxane oligomers with ozone
JP2001319886A (ja) * 2000-05-08 2001-11-16 Tokyo Electron Ltd 熱処理装置及びその方法

Also Published As

Publication number Publication date
US20030138562A1 (en) 2003-07-24
WO2003057942A1 (en) 2003-07-17
EP1470264B1 (de) 2009-01-21
CN100392148C (zh) 2008-06-04
KR101002445B1 (ko) 2010-12-17
KR20040073520A (ko) 2004-08-19
JP4408699B2 (ja) 2010-02-03
CN1650043A (zh) 2005-08-03
US6713127B2 (en) 2004-03-30
JP2005514782A (ja) 2005-05-19
KR20090107094A (ko) 2009-10-12
AU2002360700A1 (en) 2003-07-24
EP1470264A1 (de) 2004-10-27
KR100990012B1 (ko) 2010-10-26
EP1470264A4 (de) 2007-05-16

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