CN109594063A - 一种外延反应设备 - Google Patents
一种外延反应设备 Download PDFInfo
- Publication number
- CN109594063A CN109594063A CN201811609453.9A CN201811609453A CN109594063A CN 109594063 A CN109594063 A CN 109594063A CN 201811609453 A CN201811609453 A CN 201811609453A CN 109594063 A CN109594063 A CN 109594063A
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- CN
- China
- Prior art keywords
- gas
- bottom plate
- extension
- angle
- gas conductance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/025—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811609453.9A CN109594063A (zh) | 2018-12-27 | 2018-12-27 | 一种外延反应设备 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811609453.9A CN109594063A (zh) | 2018-12-27 | 2018-12-27 | 一种外延反应设备 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN109594063A true CN109594063A (zh) | 2019-04-09 |
Family
ID=65963738
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811609453.9A Pending CN109594063A (zh) | 2018-12-27 | 2018-12-27 | 一种外延反应设备 |
Country Status (1)
Country | Link |
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CN (1) | CN109594063A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110429050A (zh) * | 2019-08-05 | 2019-11-08 | 西安奕斯伟硅片技术有限公司 | 一种外延生长基座 |
Citations (16)
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---|---|---|---|---|
US5427620A (en) * | 1987-03-31 | 1995-06-27 | Advanced Semiconductor Materials America, Inc. | Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment |
JPH08279549A (ja) * | 1995-04-07 | 1996-10-22 | Nippon Telegr & Teleph Corp <Ntt> | 真空吸着装置 |
KR20030026387A (ko) * | 2001-09-12 | 2003-04-03 | 주식회사 아이앤에스 | 반도체 웨이퍼의 화학기상증착공정중에 사용되는받침히터와 그 제조방법 |
US20050000449A1 (en) * | 2001-12-21 | 2005-01-06 | Masayuki Ishibashi | Susceptor for epitaxial growth and epitaxial growth method |
US20050022746A1 (en) * | 2003-08-01 | 2005-02-03 | Sgl Carbon, Llc | Holder for supporting wafers during semiconductor manufacture |
CN1777707A (zh) * | 2004-06-09 | 2006-05-24 | Etc外延技术中心有限公司 | 用于处理装置的支承系统 |
CN101471275A (zh) * | 2007-12-26 | 2009-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种被处理体的保持装置 |
CN101488446A (zh) * | 2008-01-14 | 2009-07-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 等离子体处理设备及其气体分配装置 |
US20100236483A1 (en) * | 2003-07-15 | 2010-09-23 | Bridgelux, Inc. | Chemical vapor deposition reactor having multiple inlets |
CN102468205A (zh) * | 2010-11-18 | 2012-05-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 托盘及具有它的晶片处理设备 |
CN102656294A (zh) * | 2009-10-16 | 2012-09-05 | 艾克斯特朗欧洲公司 | 带有位于具有多个区域的气垫上的基板保持件的cvd反应器 |
CN102763212A (zh) * | 2010-02-26 | 2012-10-31 | 应用材料公司 | 用于沉积工艺的方法和设备 |
CN104046960A (zh) * | 2014-06-24 | 2014-09-17 | 北京七星华创电子股份有限公司 | 一种应用于薄膜沉积技术的气体分配器 |
CN106148915A (zh) * | 2015-05-12 | 2016-11-23 | 朗姆研究公司 | 包含背部气体输送管路的衬底基座模块及其制造方法 |
CN107004619A (zh) * | 2014-11-12 | 2017-08-01 | 应用材料公司 | 用以减少边缘热峰的新式基座设计 |
CN108091592A (zh) * | 2016-10-28 | 2018-05-29 | 朗姆研究公司 | 平坦衬底边缘与开放体积接触的平衡途径和侧封 |
-
2018
- 2018-12-27 CN CN201811609453.9A patent/CN109594063A/zh active Pending
Patent Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5427620A (en) * | 1987-03-31 | 1995-06-27 | Advanced Semiconductor Materials America, Inc. | Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment |
JPH08279549A (ja) * | 1995-04-07 | 1996-10-22 | Nippon Telegr & Teleph Corp <Ntt> | 真空吸着装置 |
KR20030026387A (ko) * | 2001-09-12 | 2003-04-03 | 주식회사 아이앤에스 | 반도체 웨이퍼의 화학기상증착공정중에 사용되는받침히터와 그 제조방법 |
US20050000449A1 (en) * | 2001-12-21 | 2005-01-06 | Masayuki Ishibashi | Susceptor for epitaxial growth and epitaxial growth method |
US20100236483A1 (en) * | 2003-07-15 | 2010-09-23 | Bridgelux, Inc. | Chemical vapor deposition reactor having multiple inlets |
US20050022746A1 (en) * | 2003-08-01 | 2005-02-03 | Sgl Carbon, Llc | Holder for supporting wafers during semiconductor manufacture |
CN1777707A (zh) * | 2004-06-09 | 2006-05-24 | Etc外延技术中心有限公司 | 用于处理装置的支承系统 |
CN101471275A (zh) * | 2007-12-26 | 2009-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种被处理体的保持装置 |
CN101488446A (zh) * | 2008-01-14 | 2009-07-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 等离子体处理设备及其气体分配装置 |
CN102656294A (zh) * | 2009-10-16 | 2012-09-05 | 艾克斯特朗欧洲公司 | 带有位于具有多个区域的气垫上的基板保持件的cvd反应器 |
CN102763212A (zh) * | 2010-02-26 | 2012-10-31 | 应用材料公司 | 用于沉积工艺的方法和设备 |
CN102468205A (zh) * | 2010-11-18 | 2012-05-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 托盘及具有它的晶片处理设备 |
CN104046960A (zh) * | 2014-06-24 | 2014-09-17 | 北京七星华创电子股份有限公司 | 一种应用于薄膜沉积技术的气体分配器 |
CN107004619A (zh) * | 2014-11-12 | 2017-08-01 | 应用材料公司 | 用以减少边缘热峰的新式基座设计 |
CN106148915A (zh) * | 2015-05-12 | 2016-11-23 | 朗姆研究公司 | 包含背部气体输送管路的衬底基座模块及其制造方法 |
CN108091592A (zh) * | 2016-10-28 | 2018-05-29 | 朗姆研究公司 | 平坦衬底边缘与开放体积接触的平衡途径和侧封 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110429050A (zh) * | 2019-08-05 | 2019-11-08 | 西安奕斯伟硅片技术有限公司 | 一种外延生长基座 |
CN110429050B (zh) * | 2019-08-05 | 2022-02-08 | 西安奕斯伟材料科技有限公司 | 一种外延生长基座 |
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Effective date of registration: 20211009 Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant after: Xi'an yisiwei Material Technology Co.,Ltd. Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: 710065 room 1323, block a, city gate, No. 1, Jinye Road, high tech Zone, Xi'an, Shaanxi Province Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |
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Application publication date: 20190409 |