KR101244482B1 - 반도체 장치의 제조 방법 - Google Patents

반도체 장치의 제조 방법 Download PDF

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Publication number
KR101244482B1
KR101244482B1 KR1020040074158A KR20040074158A KR101244482B1 KR 101244482 B1 KR101244482 B1 KR 101244482B1 KR 1020040074158 A KR1020040074158 A KR 1020040074158A KR 20040074158 A KR20040074158 A KR 20040074158A KR 101244482 B1 KR101244482 B1 KR 101244482B1
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South Korea
Prior art keywords
chip
block
adhesive tape
semiconductor chip
dicing tape
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Expired - Fee Related
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KR1020040074158A
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English (en)
Korean (ko)
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KR20050028802A (ko
Inventor
마끼히로미
스가히데유끼
Original Assignee
가부시키가이샤 르네사스 히가시 니혼 세미콘덕터
르네사스 일렉트로닉스 가부시키가이샤
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Publication of KR20050028802A publication Critical patent/KR20050028802A/ko
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Publication of KR101244482B1 publication Critical patent/KR101244482B1/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
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    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2924/30105—Capacitance

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Dicing (AREA)
  • Die Bonding (AREA)
KR1020040074158A 2003-09-17 2004-09-16 반도체 장치의 제조 방법 Expired - Fee Related KR101244482B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2003324838 2003-09-17
JPJP-P-2003-00324838 2003-09-17
JPJP-P-2004-00200101 2004-07-07
JP2004200101A JP4574251B2 (ja) 2003-09-17 2004-07-07 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR20050028802A KR20050028802A (ko) 2005-03-23
KR101244482B1 true KR101244482B1 (ko) 2013-03-18

Family

ID=34277750

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020040074158A Expired - Fee Related KR101244482B1 (ko) 2003-09-17 2004-09-16 반도체 장치의 제조 방법

Country Status (5)

Country Link
US (1) US7115482B2 (enExample)
JP (1) JP4574251B2 (enExample)
KR (1) KR101244482B1 (enExample)
CN (2) CN100495650C (enExample)
TW (1) TW200512847A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
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KR20180087825A (ko) * 2017-01-25 2018-08-02 파스포드 테크놀로지 주식회사 반도체 제조 장치 및 반도체 장치의 제조 방법
KR102177863B1 (ko) * 2020-08-07 2020-11-11 변영기 칩 필름 단계적 박리장치
KR20220119395A (ko) * 2021-02-17 2022-08-29 가부시키가이샤 신가와 반도체 다이의 픽업 장치 및 픽업 방법

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JP4270212B2 (ja) * 2005-03-29 2009-05-27 セイコーエプソン株式会社 基板間隔調整装置、基板間隔調整方法、および液晶表示装置の製造方法
TWI339358B (en) * 2005-07-04 2011-03-21 Hitachi Ltd Rfid tag and manufacturing method thereof
JP4664150B2 (ja) * 2005-08-05 2011-04-06 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体製造装置
WO2007026497A1 (ja) * 2005-08-31 2007-03-08 Shibaura Mechatronics Corporation 半導体チップのピックアップ装置及びピックアップ方法
JP4616748B2 (ja) * 2005-10-11 2011-01-19 株式会社新川 ダイピックアップ装置
JP4765536B2 (ja) 2005-10-14 2011-09-07 パナソニック株式会社 チップピックアップ装置およびチップピックアップ方法ならびにチップ剥離装置およびチップ剥離方法
JP2007115934A (ja) * 2005-10-21 2007-05-10 Matsushita Electric Ind Co Ltd 電子部品突き上げ装置及び電子部品の供給方法
JP2007142128A (ja) * 2005-11-18 2007-06-07 Renesas Technology Corp 半導体装置およびその製造方法
CN1975995B (zh) * 2005-11-30 2010-09-29 嘉盛马来西亚公司 用于将单切单元传输到收集器中的设备和方法
JP4777761B2 (ja) * 2005-12-02 2011-09-21 株式会社ディスコ ウエーハの分割方法
JP4735829B2 (ja) * 2005-12-06 2011-07-27 澁谷工業株式会社 チップ突き上げ装置
JP4758780B2 (ja) * 2006-01-27 2011-08-31 新光電気工業株式会社 半導体装置の製造方法及び半導体装置の実装装置
WO2007086064A2 (en) * 2006-01-27 2007-08-02 Camtek Ltd Diced wafer adaptor and a method for transferring a diced wafer
US7557036B2 (en) * 2006-03-30 2009-07-07 Intel Corporation Method, system, and apparatus for filling vias
JP5054933B2 (ja) 2006-05-23 2012-10-24 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR20070120319A (ko) * 2006-06-19 2007-12-24 삼성전자주식회사 한 쌍의 이젝터들을 구비하는 반도체 칩의 탈착 장치 및이를 이용한 반도체 칩의 탈착 방법
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