KR101195713B1 - 박막 형성용 원료 및 박막의 제조방법 - Google Patents
박막 형성용 원료 및 박막의 제조방법 Download PDFInfo
- Publication number
- KR101195713B1 KR101195713B1 KR1020077000694A KR20077000694A KR101195713B1 KR 101195713 B1 KR101195713 B1 KR 101195713B1 KR 1020077000694 A KR1020077000694 A KR 1020077000694A KR 20077000694 A KR20077000694 A KR 20077000694A KR 101195713 B1 KR101195713 B1 KR 101195713B1
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- zinc
- raw material
- bis
- cvd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C49/00—Ketones; Ketenes; Dimeric ketenes; Ketonic chelates
- C07C49/92—Ketonic chelates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Chemically Coating (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004175122A JP4565897B2 (ja) | 2004-06-14 | 2004-06-14 | 薄膜形成用原料及び薄膜の製造方法 |
| JPJP-P-2004-00175122 | 2004-06-14 | ||
| PCT/JP2005/009932 WO2005121401A1 (ja) | 2004-06-14 | 2005-05-31 | 薄膜形成用原料及び薄膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20070026798A KR20070026798A (ko) | 2007-03-08 |
| KR101195713B1 true KR101195713B1 (ko) | 2012-10-29 |
Family
ID=35503087
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020077000694A Expired - Lifetime KR101195713B1 (ko) | 2004-06-14 | 2005-05-31 | 박막 형성용 원료 및 박막의 제조방법 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7335783B2 (https=) |
| EP (1) | EP1770187B1 (https=) |
| JP (1) | JP4565897B2 (https=) |
| KR (1) | KR101195713B1 (https=) |
| CN (1) | CN100582297C (https=) |
| TW (1) | TWI397532B (https=) |
| WO (1) | WO2005121401A1 (https=) |
Families Citing this family (368)
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| KR100794460B1 (ko) * | 2005-11-14 | 2008-01-17 | 주식회사 엘지화학 | 아연 실리케이트의 제조방법 |
| JP2008034736A (ja) * | 2006-07-31 | 2008-02-14 | Tokyo Electron Ltd | 熱処理方法および熱処理装置 |
| JP4757143B2 (ja) * | 2006-08-22 | 2011-08-24 | 株式会社Adeka | 薄膜形成用原料及び薄膜の製造方法 |
| JP5063074B2 (ja) * | 2006-10-03 | 2012-10-31 | 株式会社Adeka | 薄膜形成用原料、薄膜の製造方法及び亜鉛化合物 |
| JP4908275B2 (ja) * | 2007-03-16 | 2012-04-04 | 宇部興産株式会社 | 酸化亜鉛微細結晶を接着した基板、およびその製造方法 |
| EP2382044B1 (fr) * | 2008-10-13 | 2018-08-01 | ELKEM SILICONES France SAS | Nouveaux catalyseurs pour la reaction entre un isocyanate et un alcool |
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| US6429325B1 (en) | 1999-12-27 | 2002-08-06 | Asahi Denka Kogyo Kabushiki Kaisha | Copper material for chemical vapor deposition and process for forming thin film using the same |
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| DE4214321C2 (de) | 1992-05-04 | 2002-05-16 | Focke & Co | Vorrichtung zum Wenden von Packungen |
| US5258204A (en) * | 1992-06-18 | 1993-11-02 | Eastman Kodak Company | Chemical vapor deposition of metal oxide films from reaction product precursors |
| US5412129A (en) | 1994-06-17 | 1995-05-02 | Dicarolis; Stephen A. | Stabilization of precursors for thin film deposition |
| WO1998046617A1 (en) * | 1997-04-17 | 1998-10-22 | The President And Fellows Of Harvard College | Liquid precursor for formation of metal oxides |
| JP4618927B2 (ja) | 2001-04-13 | 2011-01-26 | 株式会社Adeka | 化学気相成長用原料及び金属化合物 |
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| JP3864214B2 (ja) | 2002-02-21 | 2006-12-27 | 独立行政法人物質・材料研究機構 | 酸化亜鉛光触媒薄膜の表面処理方法 |
| US6887523B2 (en) * | 2002-12-20 | 2005-05-03 | Sharp Laboratories Of America, Inc. | Method for metal oxide thin film deposition via MOCVD |
| JP4716193B2 (ja) * | 2004-03-15 | 2011-07-06 | 宇部興産株式会社 | β−ジケトナトを配位子とする金属錯体 |
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2004
- 2004-06-14 JP JP2004175122A patent/JP4565897B2/ja not_active Expired - Lifetime
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2005
- 2005-05-31 KR KR1020077000694A patent/KR101195713B1/ko not_active Expired - Lifetime
- 2005-05-31 WO PCT/JP2005/009932 patent/WO2005121401A1/ja not_active Ceased
- 2005-05-31 US US11/628,850 patent/US7335783B2/en not_active Expired - Fee Related
- 2005-05-31 CN CN200580019520A patent/CN100582297C/zh not_active Expired - Fee Related
- 2005-05-31 EP EP05745889A patent/EP1770187B1/en not_active Expired - Lifetime
- 2005-06-07 TW TW094118677A patent/TWI397532B/zh not_active IP Right Cessation
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|---|---|---|---|---|
| US6316064B1 (en) | 1999-01-25 | 2001-11-13 | Asahi Denka Kogyo Kabushiki Kaisha | Process of producing a ruthenium or ruthenium oxide thin film |
| US6429325B1 (en) | 1999-12-27 | 2002-08-06 | Asahi Denka Kogyo Kabushiki Kaisha | Copper material for chemical vapor deposition and process for forming thin film using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20070026798A (ko) | 2007-03-08 |
| CN100582297C (zh) | 2010-01-20 |
| US20070178235A1 (en) | 2007-08-02 |
| EP1770187B1 (en) | 2011-08-10 |
| JP2005350423A (ja) | 2005-12-22 |
| JP4565897B2 (ja) | 2010-10-20 |
| TW200610765A (en) | 2006-04-01 |
| WO2005121401A1 (ja) | 2005-12-22 |
| EP1770187A1 (en) | 2007-04-04 |
| US7335783B2 (en) | 2008-02-26 |
| TWI397532B (zh) | 2013-06-01 |
| EP1770187A4 (en) | 2009-10-28 |
| CN1981068A (zh) | 2007-06-13 |
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