KR100944731B1 - 전계 방출 디스플레이용 캐소드 구조 - Google Patents

전계 방출 디스플레이용 캐소드 구조 Download PDF

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Publication number
KR100944731B1
KR100944731B1 KR1020047002418A KR20047002418A KR100944731B1 KR 100944731 B1 KR100944731 B1 KR 100944731B1 KR 1020047002418 A KR1020047002418 A KR 1020047002418A KR 20047002418 A KR20047002418 A KR 20047002418A KR 100944731 B1 KR100944731 B1 KR 100944731B1
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South Korea
Prior art keywords
cathode
layer
electron emitting
slit
cathode structure
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Expired - Fee Related
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KR1020047002418A
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English (en)
Korean (ko)
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KR20040079404A (ko
Inventor
디종쟝
푸르니에아델린
몽마이욜브리지뜨
Original Assignee
꼼미사리아 아 레네르지 아토미끄
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Publication of KR20040079404A publication Critical patent/KR20040079404A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30469—Carbon nanotubes (CNTs)

Landscapes

  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
  • Overhead Projectors And Projection Screens (AREA)
KR1020047002418A 2002-02-19 2003-02-18 전계 방출 디스플레이용 캐소드 구조 Expired - Fee Related KR100944731B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0202075A FR2836279B1 (fr) 2002-02-19 2002-02-19 Structure de cathode pour ecran emissif
FR02/02075 2002-02-19
PCT/FR2003/000530 WO2003071571A1 (fr) 2002-02-19 2003-02-18 Structure de cathode pour ecran emissif

Publications (2)

Publication Number Publication Date
KR20040079404A KR20040079404A (ko) 2004-09-14
KR100944731B1 true KR100944731B1 (ko) 2010-03-03

Family

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KR1020047002418A Expired - Fee Related KR100944731B1 (ko) 2002-02-19 2003-02-18 전계 방출 디스플레이용 캐소드 구조

Country Status (9)

Country Link
US (1) US7759851B2 (enExample)
EP (1) EP1476888B1 (enExample)
JP (2) JP2005518636A (enExample)
KR (1) KR100944731B1 (enExample)
CN (1) CN1316533C (enExample)
AT (1) ATE472820T1 (enExample)
DE (1) DE60333168D1 (enExample)
FR (1) FR2836279B1 (enExample)
WO (1) WO2003071571A1 (enExample)

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FR2873852B1 (fr) 2004-07-28 2011-06-24 Commissariat Energie Atomique Structure de cathode a haute resolution
FR2886284B1 (fr) 2005-05-30 2007-06-29 Commissariat Energie Atomique Procede de realisation de nanostructures
KR20070041983A (ko) * 2005-10-17 2007-04-20 삼성에스디아이 주식회사 전자 방출 표시 디바이스
JP2007149594A (ja) * 2005-11-30 2007-06-14 Kokusai Kiban Zairyo Kenkyusho:Kk 冷陰極電界電子放出素子及び冷陰極電界電子放出素子の製造方法
KR20070083113A (ko) 2006-02-20 2007-08-23 삼성에스디아이 주식회사 전자 방출 디바이스 및 이를 이용한 전자 방출 표시디바이스
KR20070083112A (ko) 2006-02-20 2007-08-23 삼성에스디아이 주식회사 전자 방출 디바이스와 이를 이용한 전자 방출 표시디바이스
FR2897718B1 (fr) 2006-02-22 2008-10-17 Commissariat Energie Atomique Structure de cathode a nanotubes pour ecran emissif
FR2912254B1 (fr) 2007-02-06 2009-10-16 Commissariat Energie Atomique Structure emettrice d'electrons par effet de champ, a focalisation de l'emission
JP2009245672A (ja) * 2008-03-31 2009-10-22 Univ Of Tokyo フィールドエミッション装置、ならびに、その製造方法
CN104299988B (zh) * 2014-09-26 2017-08-25 中国科学院半导体研究所 一种具有平面型发射阴极的纳米真空三极管及其制作方法

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KR20010068441A (ko) * 2000-01-05 2001-07-23 김순택 전계방출소자 및 그 제조방법

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DE69211581T2 (de) * 1991-03-13 1997-02-06 Sony Corp Anordnung von Feldemissionskathoden
US5679043A (en) * 1992-03-16 1997-10-21 Microelectronics And Computer Technology Corporation Method of making a field emitter
US5763997A (en) * 1992-03-16 1998-06-09 Si Diamond Technology, Inc. Field emission display device
JP2669749B2 (ja) * 1992-03-27 1997-10-29 工業技術院長 電界放出素子
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FR2702869B1 (fr) * 1993-03-17 1995-04-21 Commissariat Energie Atomique Dispositif d'affichage à micropointes et procédé de fabrication de ce dispositif.
US5717285A (en) * 1993-03-17 1998-02-10 Commissariat A L 'energie Atomique Microtip display device having a current limiting layer and a charge avoiding layer
JP2892587B2 (ja) * 1994-03-09 1999-05-17 双葉電子工業株式会社 電界放出素子及びその製造方法
JP2809129B2 (ja) * 1995-04-20 1998-10-08 日本電気株式会社 電界放射冷陰極とこれを用いた表示装置
JP2900837B2 (ja) * 1995-05-31 1999-06-02 日本電気株式会社 電界放射型冷陰極装置及びその製造方法
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FR2779271B1 (fr) * 1998-05-26 2000-07-07 Commissariat Energie Atomique Procede de fabrication d'une source d'electrons a micropointes, a grille de focalisation auto-alignee
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JP2000268706A (ja) * 1999-03-18 2000-09-29 Matsushita Electric Ind Co Ltd 電子放出素子及びそれを用いた画像描画装置
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Also Published As

Publication number Publication date
ATE472820T1 (de) 2010-07-15
CN1552084A (zh) 2004-12-01
EP1476888B1 (fr) 2010-06-30
JP2005518636A (ja) 2005-06-23
US7759851B2 (en) 2010-07-20
FR2836279A1 (fr) 2003-08-22
DE60333168D1 (de) 2010-08-12
CN1316533C (zh) 2007-05-16
WO2003071571A1 (fr) 2003-08-28
JP5425753B2 (ja) 2014-02-26
EP1476888A1 (fr) 2004-11-17
US20040256969A1 (en) 2004-12-23
KR20040079404A (ko) 2004-09-14
FR2836279B1 (fr) 2004-09-24
JP2011103303A (ja) 2011-05-26
WO2003071571A8 (fr) 2004-04-29

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