DE69211581T2 - Anordnung von Feldemissionskathoden - Google Patents

Anordnung von Feldemissionskathoden

Info

Publication number
DE69211581T2
DE69211581T2 DE69211581T DE69211581T DE69211581T2 DE 69211581 T2 DE69211581 T2 DE 69211581T2 DE 69211581 T DE69211581 T DE 69211581T DE 69211581 T DE69211581 T DE 69211581T DE 69211581 T2 DE69211581 T2 DE 69211581T2
Authority
DE
Germany
Prior art keywords
arrangement
field emission
emission cathodes
cathodes
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69211581T
Other languages
English (en)
Other versions
DE69211581D1 (de
Inventor
Hidetoshi Watanabe
Toshio Ohoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4842391A external-priority patent/JP3084768B2/ja
Priority claimed from JP5727091A external-priority patent/JP3526462B2/ja
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE69211581D1 publication Critical patent/DE69211581D1/de
Publication of DE69211581T2 publication Critical patent/DE69211581T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/319—Circuit elements associated with the emitters by direct integration
DE69211581T 1991-03-13 1992-03-12 Anordnung von Feldemissionskathoden Expired - Lifetime DE69211581T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4842391A JP3084768B2 (ja) 1991-03-13 1991-03-13 電界放出型陰極装置
JP5727091A JP3526462B2 (ja) 1991-03-20 1991-03-20 電界放出型陰極装置

Publications (2)

Publication Number Publication Date
DE69211581D1 DE69211581D1 (de) 1996-07-25
DE69211581T2 true DE69211581T2 (de) 1997-02-06

Family

ID=26388692

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69211581T Expired - Lifetime DE69211581T2 (de) 1991-03-13 1992-03-12 Anordnung von Feldemissionskathoden

Country Status (3)

Country Link
US (1) US5319279A (de)
EP (1) EP0503638B1 (de)
DE (1) DE69211581T2 (de)

Families Citing this family (52)

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JP3226238B2 (ja) * 1993-03-15 2001-11-05 株式会社東芝 電界放出型冷陰極およびその製造方法
US5396150A (en) * 1993-07-01 1995-03-07 Industrial Technology Research Institute Single tip redundancy method and resulting flat panel display
FR2713394B1 (fr) * 1993-11-29 1996-11-08 Futaba Denshi Kogyo Kk Source d'électron de type à émission de champ.
US5461009A (en) * 1993-12-08 1995-10-24 Industrial Technology Research Institute Method of fabricating high uniformity field emission display
WO1996002063A1 (en) * 1994-07-12 1996-01-25 Amoco Corporation Volcano-shaped field emitter structures
US5698933A (en) * 1994-07-25 1997-12-16 Motorola, Inc. Field emission device current control apparatus and method
TW289864B (de) * 1994-09-16 1996-11-01 Micron Display Tech Inc
US6417605B1 (en) 1994-09-16 2002-07-09 Micron Technology, Inc. Method of preventing junction leakage in field emission devices
US5541466A (en) * 1994-11-18 1996-07-30 Texas Instruments Incorporated Cluster arrangement of field emission microtips on ballast layer
US5569975A (en) * 1994-11-18 1996-10-29 Texas Instruments Incorporated Cluster arrangement of field emission microtips
US5557159A (en) * 1994-11-18 1996-09-17 Texas Instruments Incorporated Field emission microtip clusters adjacent stripe conductors
US5536993A (en) * 1994-11-18 1996-07-16 Texas Instruments Incorporated Clustered field emission microtips adjacent stripe conductors
US5542866A (en) * 1994-12-27 1996-08-06 Industrial Technology Research Institute Field emission display provided with repair capability of defects
JP3079352B2 (ja) * 1995-02-10 2000-08-21 双葉電子工業株式会社 ＮｂＮ電極を用いた真空気密素子
JP2897674B2 (ja) * 1995-02-28 1999-05-31 日本電気株式会社 電界放出型冷陰極とこれを用いた電子銃
JP3070469B2 (ja) * 1995-03-20 2000-07-31 日本電気株式会社 電界放射冷陰極およびその製造方法
US5594297A (en) * 1995-04-19 1997-01-14 Texas Instruments Incorporated Field emission device metallization including titanium tungsten and aluminum
KR970023568A (ko) * 1995-10-31 1997-05-30 윤종용 전계 방출 표시소자와 그 구동 방법 및 제조 방법
KR100343213B1 (ko) * 1995-11-14 2002-11-27 삼성에스디아이 주식회사 전계방출소자의제조방법
US5693235A (en) * 1995-12-04 1997-12-02 Industrial Technology Research Institute Methods for manufacturing cold cathode arrays
US5668437A (en) * 1996-05-14 1997-09-16 Micro Display Technology, Inc. Praseodymium-manganese oxide layer for use in field emission displays
JPH10149778A (ja) * 1996-09-17 1998-06-02 Toshiba Corp 微小冷陰極管とその駆動方法
US5902491A (en) 1996-10-07 1999-05-11 Micron Technology, Inc. Method of removing surface protrusions from thin films
KR100270333B1 (ko) * 1996-12-21 2000-10-16 정선종 전계방출 디스플레이를 위한 후막 및 박막 적층형 발광층 제조방법
KR100265859B1 (ko) * 1996-12-21 2000-09-15 정선종 전계방출 디스플레이용 발광입자
US6015323A (en) * 1997-01-03 2000-01-18 Micron Technology, Inc. Field emission display cathode assembly government rights
WO1998034265A1 (fr) * 1997-02-04 1998-08-06 Leonid Danilovich Karpov Mode de preparation d'un appareil a resistances du type planar
US5956611A (en) * 1997-09-03 1999-09-21 Micron Technologies, Inc. Field emission displays with reduced light leakage
US6448708B1 (en) * 1997-09-17 2002-09-10 Candescent Intellectual Property Services, Inc. Dual-layer metal for flat panel display
US6278229B1 (en) 1998-07-29 2001-08-21 Micron Technology, Inc. Field emission displays having a light-blocking layer in the extraction grid
KR100375848B1 (ko) * 1999-03-19 2003-03-15 가부시끼가이샤 도시바 전계방출소자의 제조방법 및 디스플레이 장치
US6342755B1 (en) 1999-08-11 2002-01-29 Sony Corporation Field emission cathodes having an emitting layer comprised of electron emitting particles and insulating particles
US6462467B1 (en) 1999-08-11 2002-10-08 Sony Corporation Method for depositing a resistive material in a field emission cathode
US7088037B2 (en) * 1999-09-01 2006-08-08 Micron Technology, Inc. Field emission display device
US6710525B1 (en) 1999-10-19 2004-03-23 Candescent Technologies Corporation Electrode structure and method for forming electrode structure for a flat panel display
US6384520B1 (en) 1999-11-24 2002-05-07 Sony Corporation Cathode structure for planar emitter field emission displays
US6703300B2 (en) * 2001-03-30 2004-03-09 The Penn State Research Foundation Method for making multilayer electronic devices
US6897564B2 (en) * 2002-01-14 2005-05-24 Plasmion Displays, Llc. Plasma display panel having trench discharge cells with one or more electrodes formed therein and extended to outside of the trench
FR2836279B1 (fr) * 2002-02-19 2004-09-24 Commissariat Energie Atomique Structure de cathode pour ecran emissif
FR2836280B1 (fr) 2002-02-19 2004-04-02 Commissariat Energie Atomique Structure de cathode a couche emissive formee sur une couche resistive
CN100446156C (zh) * 2004-03-26 2008-12-24 东元奈米应材股份有限公司 四极结构场发射显示器的网罩制造方法
US7108575B2 (en) * 2004-04-20 2006-09-19 Teco Nanotech Co., Ltd. Method for fabricating mesh of tetraode field-emission display
US7138753B2 (en) * 2004-04-20 2006-11-21 Teco Nanotech Co., Ltd. Tetraode field-emission display and method of fabricating the same
KR20060011662A (ko) * 2004-07-30 2006-02-03 삼성에스디아이 주식회사 전자 방출 소자 및 그 제조방법
KR20060024565A (ko) * 2004-09-14 2006-03-17 삼성에스디아이 주식회사 전계 방출 소자 및 그 제조방법
US7431964B2 (en) * 2004-12-17 2008-10-07 Motorola, Inc. Method of forming a porous metal catalyst on a substrate for nanotube growth
KR20060095318A (ko) * 2005-02-28 2006-08-31 삼성에스디아이 주식회사 전자 방출 소자와 이의 제조 방법
KR101107134B1 (ko) * 2005-08-26 2012-01-31 삼성에스디아이 주식회사 전자 방출 소자, 전자 방출 디바이스 및 그 제조 방법
FR2899572B1 (fr) * 2006-04-05 2008-09-05 Commissariat Energie Atomique Protection de cavites debouchant sur une face d'un element microstructure
KR100837407B1 (ko) * 2006-11-15 2008-06-12 삼성전자주식회사 전계방출소자의 제조방법
US8536564B1 (en) * 2011-09-28 2013-09-17 Sandia Corporation Integrated field emission array for ion desorption
TW202232543A (zh) * 2020-09-30 2022-08-16 美商Ｎｃｘ公司 場發射陰極裝置及形成場發射陰極裝置之方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5436828B2 (de) * 1974-08-16 1979-11-12
NL8400297A (nl) * 1984-02-01 1985-09-02 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel.
US4721885A (en) * 1987-02-11 1988-01-26 Sri International Very high speed integrated microelectronic tubes
US5066883A (en) * 1987-07-15 1991-11-19 Canon Kabushiki Kaisha Electron-emitting device with electron-emitting region insulated from electrodes
US5038070A (en) * 1989-12-26 1991-08-06 Hughes Aircraft Company Field emitter structure and fabrication process

Also Published As

Publication number Publication date
US5319279A (en) 1994-06-07
EP0503638A2 (de) 1992-09-16
EP0503638A3 (de) 1994-02-16
EP0503638B1 (de) 1996-06-19
DE69211581D1 (de) 1996-07-25

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