US5449920A
(en)
*
|
1994-04-20 |
1995-09-12 |
Northeastern University |
Large area ion implantation process and apparatus
|
US6607991B1
(en)
|
1995-05-08 |
2003-08-19 |
Electron Vision Corporation |
Method for curing spin-on dielectric films utilizing electron beam radiation
|
US6652922B1
(en)
*
|
1995-06-15 |
2003-11-25 |
Alliedsignal Inc. |
Electron-beam processed films for microelectronics structures
|
US6027663A
(en)
*
|
1995-08-28 |
2000-02-22 |
Georgia Tech Research Corporation |
Method and apparatus for low energy electron enhanced etching of substrates
|
US5882538A
(en)
*
|
1995-08-28 |
1999-03-16 |
Georgia Tech Research Corporation |
Method and apparatus for low energy electron enhanced etching of substrates
|
US6258287B1
(en)
|
1996-08-28 |
2001-07-10 |
Georgia Tech Research Corporation |
Method and apparatus for low energy electron enhanced etching of substrates in an AC or DC plasma environment
|
US6033587A
(en)
*
|
1996-09-20 |
2000-03-07 |
Georgia Tech Research Corporation |
Method and apparatus for low energy electron enhanced etching and cleaning of substrates in the positive column of a plasma
|
US6407492B1
(en)
|
1997-01-02 |
2002-06-18 |
Advanced Electron Beams, Inc. |
Electron beam accelerator
|
US5962995A
(en)
*
|
1997-01-02 |
1999-10-05 |
Applied Advanced Technologies, Inc. |
Electron beam accelerator
|
JPH10241615A
(ja)
*
|
1997-02-25 |
1998-09-11 |
Nikon Corp |
電子線露光装置
|
US5843537A
(en)
*
|
1997-03-07 |
1998-12-01 |
Quantum Corporation |
Insulator cure process for giant magnetoresistive heads
|
US6124421A
(en)
*
|
1997-12-12 |
2000-09-26 |
Alliedsignal Inc. |
Poly(arylene ether) compositions and methods of manufacture thereof
|
US6303733B1
(en)
|
1997-12-12 |
2001-10-16 |
Alliedsignal Inc. |
Poly(arylene ether) homopolymer compositions and methods of manufacture thereof
|
US5968710A
(en)
*
|
1998-02-19 |
1999-10-19 |
Micron Technology, Inc. |
Controlled removal of electron beam curable coatings and articles formed thereby
|
US7640083B2
(en)
*
|
2002-11-22 |
2009-12-29 |
Monroe David A |
Record and playback system for aircraft
|
US6545398B1
(en)
*
|
1998-12-10 |
2003-04-08 |
Advanced Electron Beams, Inc. |
Electron accelerator having a wide electron beam that extends further out and is wider than the outer periphery of the device
|
US6361837B2
(en)
|
1999-01-15 |
2002-03-26 |
Advanced Micro Devices, Inc. |
Method and system for modifying and densifying a porous film
|
US6192897B1
(en)
*
|
1999-01-27 |
2001-02-27 |
Euv Llc |
Apparatus and method for in-situ cleaning of resist outgassing windows
|
AU3888400A
(en)
*
|
1999-03-19 |
2000-10-09 |
Electron Vision Corporation |
Cluster tool for wafer processing having an electron beam exposure module
|
US6551926B1
(en)
*
|
1999-06-09 |
2003-04-22 |
Electron Vision Corporation |
Electron beam annealing of metals, alloys, nitrides and silicides
|
US6509259B1
(en)
*
|
1999-06-09 |
2003-01-21 |
Alliedsignal Inc. |
Process of using siloxane dielectric films in the integration of organic dielectric films in electronic devices
|
KR100301066B1
(ko)
*
|
1999-08-16 |
2001-11-01 |
윤종용 |
비금속 도전물질로 구성된 음극판을 갖는 전자빔 조사장비
|
US6271146B1
(en)
|
1999-09-30 |
2001-08-07 |
Electron Vision Corporation |
Electron beam treatment of fluorinated silicate glass
|
US6407399B1
(en)
*
|
1999-09-30 |
2002-06-18 |
Electron Vision Corporation |
Uniformity correction for large area electron source
|
US6458430B1
(en)
*
|
1999-12-22 |
2002-10-01 |
Axcelis Technologies, Inc. |
Pretreatment process for plasma immersion ion implantation
|
US6358670B1
(en)
|
1999-12-28 |
2002-03-19 |
Electron Vision Corporation |
Enhancement of photoresist plasma etch resistance via electron beam surface cure
|
US6426127B1
(en)
|
1999-12-28 |
2002-07-30 |
Electron Vision Corporation |
Electron beam modification of perhydrosilazane spin-on glass
|
EP1124252A2
(de)
*
|
2000-02-10 |
2001-08-16 |
Applied Materials, Inc. |
Verfahren und Vorrichtung zur Verarbeitung von Substraten
|
US6582777B1
(en)
*
|
2000-02-17 |
2003-06-24 |
Applied Materials Inc. |
Electron beam modification of CVD deposited low dielectric constant materials
|
US6291940B1
(en)
|
2000-06-09 |
2001-09-18 |
Applied Materials, Inc. |
Blanker array for a multipixel electron source
|
US6746969B2
(en)
|
2000-10-20 |
2004-06-08 |
Kabushiki Kaisha Toshiba |
Method of manufacturing semiconductor device
|
US6521897B1
(en)
*
|
2000-11-17 |
2003-02-18 |
The Regents Of The University Of California |
Ion beam collimating grid to reduce added defects
|
JP4246373B2
(ja)
*
|
2000-11-27 |
2009-04-02 |
株式会社アドバンテスト |
電子ビーム生成装置及び電子ビーム露光装置
|
US6518175B1
(en)
|
2001-01-29 |
2003-02-11 |
Advanced Micro Devices, Inc. |
Process for reducing critical dimensions of contact holes, vias, and trench structures in integrated circuits
|
US6589713B1
(en)
|
2001-01-29 |
2003-07-08 |
Advanced Micro Devices, Inc. |
Process for reducing the pitch of contact holes, vias, and trench structures in integrated circuits
|
US6797953B2
(en)
*
|
2001-02-23 |
2004-09-28 |
Fei Company |
Electron beam system using multiple electron beams
|
US6589709B1
(en)
|
2001-03-28 |
2003-07-08 |
Advanced Micro Devices, Inc. |
Process for preventing deformation of patterned photoresist features
|
US6774365B2
(en)
*
|
2001-03-28 |
2004-08-10 |
Advanced Micro Devices, Inc. |
SEM inspection and analysis of patterned photoresist features
|
US6653231B2
(en)
|
2001-03-28 |
2003-11-25 |
Advanced Micro Devices, Inc. |
Process for reducing the critical dimensions of integrated circuit device features
|
US6630288B2
(en)
|
2001-03-28 |
2003-10-07 |
Advanced Micro Devices, Inc. |
Process for forming sub-lithographic photoresist features by modification of the photoresist surface
|
US6815359B2
(en)
*
|
2001-03-28 |
2004-11-09 |
Advanced Micro Devices, Inc. |
Process for improving the etch stability of ultra-thin photoresist
|
US6828259B2
(en)
|
2001-03-28 |
2004-12-07 |
Advanced Micro Devices, Inc. |
Enhanced transistor gate using E-beam radiation
|
US6716571B2
(en)
|
2001-03-28 |
2004-04-06 |
Advanced Micro Devices, Inc. |
Selective photoresist hardening to facilitate lateral trimming
|
US6647995B1
(en)
*
|
2001-06-27 |
2003-11-18 |
Advanced Micro Devices, Inc. |
Method and system for eliminating post etch residues
|
US7546016B2
(en)
*
|
2001-06-28 |
2009-06-09 |
E-Beam & Light, Inc. |
Optical elements formed by inducing changes in the index of refraction by utilizing electron beam radiation
|
US7026634B2
(en)
*
|
2001-06-28 |
2006-04-11 |
E-Beam & Light, Inc. |
Method and apparatus for forming optical materials and devices
|
US7253425B2
(en)
*
|
2001-06-28 |
2007-08-07 |
E-Beam & Light, Inc. |
Method and apparatus for forming optical elements by inducing changes in the index of refraction by utilizing electron beam radiation
|
US20060011863A1
(en)
*
|
2001-06-28 |
2006-01-19 |
E-Beam & Light, Inc. |
Electron beam method and apparatus for improved melt point temperatures and optical clarity of halogenated optical materials
|
US7372052B2
(en)
*
|
2001-06-28 |
2008-05-13 |
C-Beam & Light, Inc. |
Electron beam method and apparatus for reducing or patterning the birefringence of halogenated optical materials
|
US6750461B2
(en)
|
2001-10-03 |
2004-06-15 |
Si Diamond Technology, Inc. |
Large area electron source
|
US6753129B2
(en)
*
|
2001-12-07 |
2004-06-22 |
Applied Materials Inc. |
Method and apparatus for modification of chemically amplified photoresist by electron beam exposure
|
US6838393B2
(en)
*
|
2001-12-14 |
2005-01-04 |
Applied Materials, Inc. |
Method for producing semiconductor including forming a layer containing at least silicon carbide and forming a second layer containing at least silicon oxygen carbide
|
US6890850B2
(en)
*
|
2001-12-14 |
2005-05-10 |
Applied Materials, Inc. |
Method of depositing dielectric materials in damascene applications
|
US7091137B2
(en)
*
|
2001-12-14 |
2006-08-15 |
Applied Materials |
Bi-layer approach for a hermetic low dielectric constant layer for barrier applications
|
US20030119203A1
(en)
*
|
2001-12-24 |
2003-06-26 |
Kimberly-Clark Worldwide, Inc. |
Lateral flow assay devices and methods for conducting assays
|
US8367013B2
(en)
*
|
2001-12-24 |
2013-02-05 |
Kimberly-Clark Worldwide, Inc. |
Reading device, method, and system for conducting lateral flow assays
|
JP3842159B2
(ja)
*
|
2002-03-26 |
2006-11-08 |
株式会社半導体エネルギー研究所 |
ドーピング装置
|
US20030211244A1
(en)
*
|
2002-04-11 |
2003-11-13 |
Applied Materials, Inc. |
Reacting an organosilicon compound with an oxidizing gas to form an ultra low k dielectric
|
US6815373B2
(en)
*
|
2002-04-16 |
2004-11-09 |
Applied Materials Inc. |
Use of cyclic siloxanes for hardness improvement of low k dielectric films
|
US7056560B2
(en)
*
|
2002-05-08 |
2006-06-06 |
Applies Materials Inc. |
Ultra low dielectric materials based on hybrid system of linear silicon precursor and organic porogen by plasma-enhanced chemical vapor deposition (PECVD)
|
US20040101632A1
(en)
*
|
2002-11-22 |
2004-05-27 |
Applied Materials, Inc. |
Method for curing low dielectric constant film by electron beam
|
US7323399B2
(en)
*
|
2002-05-08 |
2008-01-29 |
Applied Materials, Inc. |
Clean process for an electron beam source
|
US7060330B2
(en)
*
|
2002-05-08 |
2006-06-13 |
Applied Materials, Inc. |
Method for forming ultra low k films using electron beam
|
US6936551B2
(en)
*
|
2002-05-08 |
2005-08-30 |
Applied Materials Inc. |
Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices
|
US20040266123A1
(en)
*
|
2002-05-08 |
2004-12-30 |
Applied Materials, Inc. |
Electron beam treatment of SixNy films
|
US6989227B2
(en)
|
2002-06-07 |
2006-01-24 |
Applied Materials Inc. |
E-beam curable resist and process for e-beam curing the resist
|
US7285424B2
(en)
|
2002-08-27 |
2007-10-23 |
Kimberly-Clark Worldwide, Inc. |
Membrane-based assay devices
|
US7314763B2
(en)
|
2002-08-27 |
2008-01-01 |
Kimberly-Clark Worldwide, Inc. |
Fluidics-based assay devices
|
US7432105B2
(en)
*
|
2002-08-27 |
2008-10-07 |
Kimberly-Clark Worldwide, Inc. |
Self-calibration system for a magnetic binding assay
|
US6822395B2
(en)
*
|
2002-09-03 |
2004-11-23 |
Taiwan Semiconductor Manufacturing Co., Ltd |
Devices for controlling electron emission in plasma flood system
|
US7749563B2
(en)
*
|
2002-10-07 |
2010-07-06 |
Applied Materials, Inc. |
Two-layer film for next generation damascene barrier application with good oxidation resistance
|
US6808600B2
(en)
*
|
2002-11-08 |
2004-10-26 |
Kimberly-Clark Worldwide, Inc. |
Method for enhancing the softness of paper-based products
|
US6831284B2
(en)
*
|
2002-11-21 |
2004-12-14 |
Applied Materials, Inc. |
Large area source for uniform electron beam generation
|
US6906788B2
(en)
*
|
2002-11-22 |
2005-06-14 |
Asml Netherlands B.V. |
Lithographic projection apparatus with multiple suppression meshes
|
US20040106190A1
(en)
*
|
2002-12-03 |
2004-06-03 |
Kimberly-Clark Worldwide, Inc. |
Flow-through assay devices
|
US7247500B2
(en)
*
|
2002-12-19 |
2007-07-24 |
Kimberly-Clark Worldwide, Inc. |
Reduction of the hook effect in membrane-based assay devices
|
US6790788B2
(en)
*
|
2003-01-13 |
2004-09-14 |
Applied Materials Inc. |
Method of improving stability in low k barrier layers
|
US20040152239A1
(en)
*
|
2003-01-21 |
2004-08-05 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Interface improvement by electron beam process
|
US6900001B2
(en)
*
|
2003-01-31 |
2005-05-31 |
Applied Materials, Inc. |
Method for modifying resist images by electron beam exposure
|
US6897163B2
(en)
*
|
2003-01-31 |
2005-05-24 |
Applied Materials, Inc. |
Method for depositing a low dielectric constant film
|
US7011890B2
(en)
*
|
2003-03-03 |
2006-03-14 |
Applied Materials Inc. |
Modulated/composited CVD low-k films with improved mechanical and electrical properties for nanoelectronic devices
|
US20050260420A1
(en)
*
|
2003-04-01 |
2005-11-24 |
Collins Martha J |
Low dielectric materials and methods for making same
|
US20040197819A1
(en)
*
|
2003-04-03 |
2004-10-07 |
Kimberly-Clark Worldwide, Inc. |
Assay devices that utilize hollow particles
|
US7851209B2
(en)
|
2003-04-03 |
2010-12-14 |
Kimberly-Clark Worldwide, Inc. |
Reduction of the hook effect in assay devices
|
US6693050B1
(en)
|
2003-05-06 |
2004-02-17 |
Applied Materials Inc. |
Gapfill process using a combination of spin-on-glass deposition and chemical vapor deposition techniques
|
US6878644B2
(en)
*
|
2003-05-06 |
2005-04-12 |
Applied Materials, Inc. |
Multistep cure technique for spin-on-glass films
|
US6975073B2
(en)
*
|
2003-05-19 |
2005-12-13 |
George Wakalopulos |
Ion plasma beam generating device
|
US7012268B2
(en)
*
|
2003-05-21 |
2006-03-14 |
Asm Japan K.K. |
Gas-shield electron-beam gun for thin-film curing application
|
US20040253378A1
(en)
*
|
2003-06-12 |
2004-12-16 |
Applied Materials, Inc. |
Stress reduction of SIOC low k film by addition of alkylenes to OMCTS based processes
|
US7754197B2
(en)
|
2003-10-16 |
2010-07-13 |
Kimberly-Clark Worldwide, Inc. |
Method for reducing odor using coordinated polydentate compounds
|
US7049606B2
(en)
*
|
2003-10-30 |
2006-05-23 |
Applied Materials, Inc. |
Electron beam treatment apparatus
|
WO2005043580A1
(en)
*
|
2003-10-31 |
2005-05-12 |
Ventracor Limited |
Plasma immersion ion implantation using conductive mesh
|
US7943395B2
(en)
*
|
2003-11-21 |
2011-05-17 |
Kimberly-Clark Worldwide, Inc. |
Extension of the dynamic detection range of assay devices
|
US20050112703A1
(en)
*
|
2003-11-21 |
2005-05-26 |
Kimberly-Clark Worldwide, Inc. |
Membrane-based lateral flow assay devices that utilize phosphorescent detection
|
US7713748B2
(en)
*
|
2003-11-21 |
2010-05-11 |
Kimberly-Clark Worldwide, Inc. |
Method of reducing the sensitivity of assay devices
|
US20050132466A1
(en)
*
|
2003-12-11 |
2005-06-23 |
Kimberly-Clark Worldwide, Inc. |
Elastomeric glove coating
|
US20050127552A1
(en)
|
2003-12-11 |
2005-06-16 |
Kimberly-Clark Worldwide, Inc. |
Method for forming an elastomeric article
|
US20050136550A1
(en)
*
|
2003-12-19 |
2005-06-23 |
Kimberly-Clark Worldwide, Inc. |
Flow control of electrochemical-based assay devices
|
US7943089B2
(en)
*
|
2003-12-19 |
2011-05-17 |
Kimberly-Clark Worldwide, Inc. |
Laminated assay devices
|
US7790583B2
(en)
*
|
2004-02-20 |
2010-09-07 |
Applied Materials, Inc. |
Clean process for an electron beam source
|
US7045798B2
(en)
*
|
2004-02-20 |
2006-05-16 |
Applied Materials, Inc. |
Characterizing an electron beam treatment apparatus
|
US7049612B2
(en)
*
|
2004-03-02 |
2006-05-23 |
Applied Materials |
Electron beam treatment apparatus
|
US20050214457A1
(en)
*
|
2004-03-29 |
2005-09-29 |
Applied Materials, Inc. |
Deposition of low dielectric constant films by N2O addition
|
US20050224722A1
(en)
*
|
2004-03-30 |
2005-10-13 |
Applied Materials, Inc. |
Method and apparatus for reducing charge density on a dielectric coated substrate after exposure to large area electron beam
|
US7547643B2
(en)
|
2004-03-31 |
2009-06-16 |
Applied Materials, Inc. |
Techniques promoting adhesion of porous low K film to underlying barrier layer
|
US20050227502A1
(en)
*
|
2004-04-12 |
2005-10-13 |
Applied Materials, Inc. |
Method for forming an ultra low dielectric film by forming an organosilicon matrix and large porogens as a template for increased porosity
|
US7229911B2
(en)
*
|
2004-04-19 |
2007-06-12 |
Applied Materials, Inc. |
Adhesion improvement for low k dielectrics to conductive materials
|
US20050233555A1
(en)
*
|
2004-04-19 |
2005-10-20 |
Nagarajan Rajagopalan |
Adhesion improvement for low k dielectrics to conductive materials
|
US7018941B2
(en)
|
2004-04-21 |
2006-03-28 |
Applied Materials, Inc. |
Post treatment of low k dielectric films
|
US7075093B2
(en)
|
2004-05-12 |
2006-07-11 |
Gorski Richard M |
Parallel multi-electron beam lithography for IC fabrication with precise X-Y translation
|
US20050277302A1
(en)
*
|
2004-05-28 |
2005-12-15 |
Nguyen Son V |
Advanced low dielectric constant barrier layers
|
US7229041B2
(en)
*
|
2004-06-30 |
2007-06-12 |
Ohio Central Steel Company |
Lifting lid crusher
|
US7521226B2
(en)
*
|
2004-06-30 |
2009-04-21 |
Kimberly-Clark Worldwide, Inc. |
One-step enzymatic and amine detection technique
|
US7288205B2
(en)
|
2004-07-09 |
2007-10-30 |
Applied Materials, Inc. |
Hermetic low dielectric constant layer for barrier applications
|
US7588803B2
(en)
*
|
2005-02-01 |
2009-09-15 |
Applied Materials, Inc. |
Multi step ebeam process for modifying dielectric materials
|
US20060228889A1
(en)
*
|
2005-03-31 |
2006-10-12 |
Edelberg Erik A |
Methods of removing resist from substrates in resist stripping chambers
|
US20060289795A1
(en)
*
|
2005-06-02 |
2006-12-28 |
Dubois Dale R |
Vacuum reaction chamber with x-lamp heater
|
US7777197B2
(en)
|
2005-06-02 |
2010-08-17 |
Applied Materials, Inc. |
Vacuum reaction chamber with x-lamp heater
|
US8092641B1
(en)
*
|
2005-08-08 |
2012-01-10 |
Hermes-Microvision, Inc. |
System and method for removing organic residue from a charged particle beam system
|
US7678586B2
(en)
*
|
2005-12-08 |
2010-03-16 |
Chartered Semiconductor Manufacturing, Ltd. |
Structure and method to prevent charge damage from e-beam curing process
|
US20070134435A1
(en)
*
|
2005-12-13 |
2007-06-14 |
Ahn Sang H |
Method to improve the ashing/wet etch damage resistance and integration stability of low dielectric constant films
|
US7407736B2
(en)
*
|
2006-01-31 |
2008-08-05 |
International Business Machines Corporation |
Methods of improving single layer resist patterning scheme
|
US7851384B2
(en)
*
|
2006-06-01 |
2010-12-14 |
Applied Materials, Inc. |
Method to mitigate impact of UV and E-beam exposure on semiconductor device film properties by use of a bilayer film
|
US7585382B2
(en)
*
|
2006-06-30 |
2009-09-08 |
Kimberly-Clark Worldwide, Inc. |
Latent elastic nonwoven composite
|
US7297376B1
(en)
|
2006-07-07 |
2007-11-20 |
Applied Materials, Inc. |
Method to reduce gas-phase reactions in a PECVD process with silicon and organic precursors to deposit defect-free initial layers
|
US7938921B2
(en)
*
|
2006-11-22 |
2011-05-10 |
Kimberly-Clark Worldwide, Inc. |
Strand composite having latent elasticity
|
US7582178B2
(en)
*
|
2006-11-22 |
2009-09-01 |
Kimberly-Clark Worldwide, Inc. |
Nonwoven-film composite with latent elasticity
|
US7935538B2
(en)
*
|
2006-12-15 |
2011-05-03 |
Kimberly-Clark Worldwide, Inc. |
Indicator immobilization on assay devices
|
US7785496B1
(en)
|
2007-01-26 |
2010-08-31 |
Clemson University Research Foundation |
Electrochromic inks including conducting polymer colloidal nanocomposites, devices including the electrochromic inks and methods of forming same
|
US7910795B2
(en)
*
|
2007-03-09 |
2011-03-22 |
Kimberly-Clark Worldwide, Inc. |
Absorbent article containing a crosslinked elastic film
|
US8349963B2
(en)
*
|
2007-10-16 |
2013-01-08 |
Kimberly-Clark Worldwide, Inc. |
Crosslinked elastic material formed from a linear block copolymer
|
US8399368B2
(en)
*
|
2007-10-16 |
2013-03-19 |
Kimberly-Clark Worldwide, Inc. |
Nonwoven web material containing a crosslinked elastic component formed from a linear block copolymer
|
US7923391B2
(en)
*
|
2007-10-16 |
2011-04-12 |
Kimberly-Clark Worldwide, Inc. |
Nonwoven web material containing crosslinked elastic component formed from a pentablock copolymer
|
US7923392B2
(en)
*
|
2007-10-16 |
2011-04-12 |
Kimberly-Clark Worldwide, Inc. |
Crosslinked elastic material formed from a branched block copolymer
|
US8134042B2
(en)
*
|
2007-12-14 |
2012-03-13 |
Kimberly-Clark Worldwide, Inc. |
Wetness sensors
|
US20090157024A1
(en)
*
|
2007-12-14 |
2009-06-18 |
Kimberly-Clark Worldwide, Inc. |
Hydration Test Devices
|
AU2013202841B2
(en)
*
|
2008-04-30 |
2015-05-07 |
Xyleco, Inc. |
Paper products and methods and systems for manufacturing such products
|
US7867358B2
(en)
|
2008-04-30 |
2011-01-11 |
Xyleco, Inc. |
Paper products and methods and systems for manufacturing such products
|
US8709191B2
(en)
|
2008-05-15 |
2014-04-29 |
Kimberly-Clark Worldwide, Inc. |
Latent elastic composite formed from a multi-layered film
|
US20090325440A1
(en)
*
|
2008-06-30 |
2009-12-31 |
Thomas Oomman P |
Films and film laminates with relatively high machine direction modulus
|
US8222476B2
(en)
|
2008-10-31 |
2012-07-17 |
Kimberly-Clark Worldwide, Inc. |
Absorbent articles with impending leakage sensors
|
US20100290948A1
(en)
*
|
2009-05-15 |
2010-11-18 |
Xuedong Song |
Absorbent articles capable of indicating the presence of urinary tract infections
|
US8623292B2
(en)
|
2010-08-17 |
2014-01-07 |
Kimberly-Clark Worldwide, Inc. |
Dehydration sensors with ion-responsive and charged polymeric surfactants
|
US8604129B2
(en)
|
2010-12-30 |
2013-12-10 |
Kimberly-Clark Worldwide, Inc. |
Sheet materials containing S-B-S and S-I/B-S copolymers
|
US9129777B2
(en)
|
2011-10-20 |
2015-09-08 |
Applied Materials, Inc. |
Electron beam plasma source with arrayed plasma sources for uniform plasma generation
|
US20130098552A1
(en)
*
|
2011-10-20 |
2013-04-25 |
Applied Materials, Inc. |
E-beam plasma source with profiled e-beam extraction grid for uniform plasma generation
|
US8951384B2
(en)
|
2011-10-20 |
2015-02-10 |
Applied Materials, Inc. |
Electron beam plasma source with segmented beam dump for uniform plasma generation
|
US20130098553A1
(en)
*
|
2011-10-20 |
2013-04-25 |
Applied Materials, Inc. |
Electron beam plasma source with profiled chamber wall for uniform plasma generation
|
US8894805B2
(en)
|
2011-10-20 |
2014-11-25 |
Applied Materials, Inc. |
Electron beam plasma source with profiled magnet shield for uniform plasma generation
|
US9018108B2
(en)
|
2013-01-25 |
2015-04-28 |
Applied Materials, Inc. |
Low shrinkage dielectric films
|
CA2976512A1
(en)
|
2015-02-27 |
2016-09-01 |
Kimberly-Clark Worldwide, Inc. |
Absorbent article leakage assessment system
|
US9896576B2
(en)
|
2015-10-29 |
2018-02-20 |
Celanese EVA Performance Polymers Corporation |
Medical tube
|
KR102099784B1
(ko)
|
2017-04-05 |
2020-04-10 |
킴벌리-클라크 월드와이드, 인크. |
흡수 용품 누출 검출 의복 및 이를 이용한 흡수 용품 누출 검출 방법
|
CN117690774B
(zh)
*
|
2024-02-04 |
2024-04-16 |
上海邦芯半导体科技有限公司 |
一种降低刻蚀不均匀度的icp装置及调节方法
|