CN1316533C - 三极管类型的阴极结构以及场致发射的平面屏幕 - Google Patents

三极管类型的阴极结构以及场致发射的平面屏幕 Download PDF

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Publication number
CN1316533C
CN1316533C CNB038009846A CN03800984A CN1316533C CN 1316533 C CN1316533 C CN 1316533C CN B038009846 A CNB038009846 A CN B038009846A CN 03800984 A CN03800984 A CN 03800984A CN 1316533 C CN1316533 C CN 1316533C
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China
Prior art keywords
constitutes
layer
emitting electrons
grid
opening
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Expired - Fee Related
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CNB038009846A
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English (en)
Chinese (zh)
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CN1552084A (zh
Inventor
J·第戎
A·富尼耶
B·蒙特马尤尔
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique CEA
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Publication of CN1552084A publication Critical patent/CN1552084A/zh
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Publication of CN1316533C publication Critical patent/CN1316533C/zh
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02Main electrodes
    • H01J1/30Cold cathodes, e.g. field-emissive cathode
    • H01J1/304Field-emissive cathodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02Electron guns
    • H01J3/021Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00Electrodes common to discharge tubes
    • H01J2201/30Cold cathodes
    • H01J2201/304Field emission cathodes
    • H01J2201/30446Field emission cathodes characterised by the emitter material
    • H01J2201/30453Carbon types
    • H01J2201/30469Carbon nanotubes (CNTs)

Landscapes

  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
  • Overhead Projectors And Projection Screens (AREA)
CNB038009846A 2002-02-19 2003-02-18 三极管类型的阴极结构以及场致发射的平面屏幕 Expired - Fee Related CN1316533C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR02/02075 2002-02-19
FR0202075A FR2836279B1 (fr) 2002-02-19 2002-02-19 Structure de cathode pour ecran emissif

Publications (2)

Publication Number Publication Date
CN1552084A CN1552084A (zh) 2004-12-01
CN1316533C true CN1316533C (zh) 2007-05-16

Family

ID=27636301

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB038009846A Expired - Fee Related CN1316533C (zh) 2002-02-19 2003-02-18 三极管类型的阴极结构以及场致发射的平面屏幕

Country Status (9)

Country Link
US (1) US7759851B2 (enExample)
EP (1) EP1476888B1 (enExample)
JP (2) JP2005518636A (enExample)
KR (1) KR100944731B1 (enExample)
CN (1) CN1316533C (enExample)
AT (1) ATE472820T1 (enExample)
DE (1) DE60333168D1 (enExample)
FR (1) FR2836279B1 (enExample)
WO (1) WO2003071571A1 (enExample)

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JP2562388Y2 (ja) 1991-08-05 1998-02-10 株式会社石井製作所 集塵機
FR2873852B1 (fr) * 2004-07-28 2011-06-24 Commissariat Energie Atomique Structure de cathode a haute resolution
FR2886284B1 (fr) 2005-05-30 2007-06-29 Commissariat Energie Atomique Procede de realisation de nanostructures
KR20070041983A (ko) * 2005-10-17 2007-04-20 삼성에스디아이 주식회사 전자 방출 표시 디바이스
JP2007149594A (ja) * 2005-11-30 2007-06-14 Kokusai Kiban Zairyo Kenkyusho:Kk 冷陰極電界電子放出素子及び冷陰極電界電子放出素子の製造方法
KR20070083113A (ko) * 2006-02-20 2007-08-23 삼성에스디아이 주식회사 전자 방출 디바이스 및 이를 이용한 전자 방출 표시디바이스
KR20070083112A (ko) * 2006-02-20 2007-08-23 삼성에스디아이 주식회사 전자 방출 디바이스와 이를 이용한 전자 방출 표시디바이스
FR2897718B1 (fr) 2006-02-22 2008-10-17 Commissariat Energie Atomique Structure de cathode a nanotubes pour ecran emissif
FR2912254B1 (fr) 2007-02-06 2009-10-16 Commissariat Energie Atomique Structure emettrice d'electrons par effet de champ, a focalisation de l'emission
JP2009245672A (ja) * 2008-03-31 2009-10-22 Univ Of Tokyo フィールドエミッション装置、ならびに、その製造方法
CN104299988B (zh) * 2014-09-26 2017-08-25 中国科学院半导体研究所 一种具有平面型发射阴极的纳米真空三极管及其制作方法

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JP2669749B2 (ja) * 1992-03-27 1997-10-29 工業技術院長 電界放出素子
JPH08505259A (ja) * 1992-12-23 1996-06-04 エスアイ ダイアモンド テクノロジー,インコーポレイテッド フラットな電界放出カソードを用いたトライオード構造のフラットパネルディスプレイ
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KR20010011136A (ko) * 1999-07-26 2001-02-15 정선종 나노구조를 에미터로 사용한 삼극형 전계 방출 에미터의 구조및 그 제조방법
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KR100464314B1 (ko) * 2000-01-05 2004-12-31 삼성에스디아이 주식회사 전계방출소자 및 그 제조방법
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Publication number Priority date Publication date Assignee Title
US5763997A (en) * 1992-03-16 1998-06-09 Si Diamond Technology, Inc. Field emission display device
US6078133A (en) * 1996-03-13 2000-06-20 Motorola, Inc. Field emission device having an amorphous multi-layered structure
JPH1092294A (ja) * 1996-09-13 1998-04-10 Sony Corp 電子放出源およびその製造方法ならびにこの電子放出源を用いたディスプレイ装置
WO2000002222A1 (fr) * 1998-07-03 2000-01-13 Thomson-Csf Dispositif a emission de champ
EP1037250A1 (en) * 1999-03-18 2000-09-20 Matsushita Electric Industrial Co., Ltd. Electron emission element and image output device
JP2000285795A (ja) * 1999-03-31 2000-10-13 Sony Corp 電子放出源およびその製造方法ならびにディスプレイ装置

Also Published As

Publication number Publication date
EP1476888B1 (fr) 2010-06-30
KR20040079404A (ko) 2004-09-14
EP1476888A1 (fr) 2004-11-17
ATE472820T1 (de) 2010-07-15
US20040256969A1 (en) 2004-12-23
FR2836279B1 (fr) 2004-09-24
JP2005518636A (ja) 2005-06-23
DE60333168D1 (de) 2010-08-12
KR100944731B1 (ko) 2010-03-03
JP5425753B2 (ja) 2014-02-26
US7759851B2 (en) 2010-07-20
JP2011103303A (ja) 2011-05-26
WO2003071571A8 (fr) 2004-04-29
CN1552084A (zh) 2004-12-01
WO2003071571A1 (fr) 2003-08-28
FR2836279A1 (fr) 2003-08-22

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Granted publication date: 20070516

Termination date: 20130218