EP1476888A1 - Structure de cathode pour ecran emissif - Google Patents
Structure de cathode pour ecran emissifInfo
- Publication number
- EP1476888A1 EP1476888A1 EP03717409A EP03717409A EP1476888A1 EP 1476888 A1 EP1476888 A1 EP 1476888A1 EP 03717409 A EP03717409 A EP 03717409A EP 03717409 A EP03717409 A EP 03717409A EP 1476888 A1 EP1476888 A1 EP 1476888A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- emitting material
- electron
- cathode
- cathode structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/02—Electron guns
- H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
- H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
- H01J2201/30453—Carbon types
- H01J2201/30469—Carbon nanotubes (CNTs)
Definitions
- the invention relates to a cathode structure usable in a flat screen with field emission.
- a cathodoluminescence display device excited by field emission comprises a cathode or structure emitting electrons and a facing anode covered with a luminescent layer.
- the anode and the cathode are separated by a space where a vacuum has been created.
- the cathode is either a source based on microtips, or a source based on an emissive layer with a low threshold field.
- the emissive layer can be a layer of carbon nanotubes or other carbon-based structures or based on other materials or multilayers (AIN, BN).
- the structure of the cathode can. be diode or triode type.
- Document FR-A-2,593,953 discloses a method of manufacturing a display device by cathodoluminescence excited by field emission.
- the structure of the cathode is of the triode type.
- the electron-emitting material is deposited on a visible conductive layer at the bottom of holes made in a layer insulator which supports an electron extraction grid.
- FIG. 1 represents, in cross-section and schematically, a cathode structure of the triode type according to the known art, for a display device by cathodoluminescence excited by field emission.
- a single transmitting device is shown in this figure.
- a layer 1 of electrically insulating material is pierced with a circular hole 2.
- a conductive layer 3 supporting a layer 4 of electron emitting material.
- the upper face of the insulating layer 1 supports a metal layer 5 forming an extraction grid and surrounding the hole 2.
- the emissive layer 4 tends to cause short circuits between the grid 5 and the conductive layer or cathode 3. This tendency is manifested in particular if the emissive layer consists of carbon nanotubes.
- the electric field which is maximum at the edge of the hole, has a significant lateral component E L (parallel to the plane of the cathode) (comparable to the perpendicular component E x of the electric field) which causes the electron beam and induces screen resolution problems.
- E L parallel to the plane of the cathode
- E x perpendicular component
- a cathode structure with an emissive layer, of the triode type, is proposed here for which the electrons emitted by the emissive layer are subjected to a weak lateral electric field, which minimizes the risks of short circuit between the grid and the cathode. which limits the divergence of the electron beam emitted by the emissive layer.
- the subject of the invention is therefore a cathode structure of the triode type comprising, in superposition, an electrode forming a cathode and supporting means made of electron emitting material in the form of a layer, a layer of electrical insulator and a gate electrode, an opening made in the gate electrode and in the layer of electrical insulator exposing the means made of electron-emitting material, the means made of electron-emitting material being located in the central part of the opening of the grid, characterized in that the opening is in the form of a slit, the means made of electron emitting material exposed by the slit being made up of at least two elements aligned along the longitudinal axis of the slit.
- the opening made in the gate electrode and in the layer of electrical insulator being substantially rectangular, said elements made of electron-emitting material also being substantially rectangular.
- a resistive layer is interposed between 1 cathode electrode and the elements of electron emitting material.
- the elements made of electron-emitting material are separated from the gate electrode by a distance greater than the size of the objects constituting the electron-emitting material.
- the electron emitting material can be made of carbon nanotubes.
- the elements made of electron-emitting material are separated from the gate electrode by a distance such that the parallel component of the electric field is at least ten times weaker than the perpendicular component of this field.
- the invention also relates to a flat field emission screen comprising a plurality of cathode structures as defined above.
- FIG. 1 is a sectional view of a cathode structure of the triode type according to known art
- FIG. 2 is a sectional view of a cathode structure of the triode type according to the invention
- FIG. 3 is a top view of a part of a cathode structure of the triode type according to the invention
- FIG. 4 is a sectional view of another cathode structure of the triode type according to the invention
- FIG. 5 is a diagram representing the spatial distribution of the electric field for a cathode structure of the triode type according to the invention
- FIGS. 8A to 8F illustrate a second method for producing a cathode structure of the triode type according to the invention
- FIG. 9 is a more complete top view of a triode type cathode structure according to the invention.
- FIG. 2 is a schematic sectional view of a triode type cathode structure according to the invention.
- This cathode structure comprises, in superposition, a conductive layer or cathode 13 supporting a layer 11 of electrically insulating material and a metal layer 15 forming an electron extraction grid.
- the insulating layer 11 and the metal layer 15 are pierced with a slot 12 exposing the cathode 13 and of width L.
- elements made of material electron emitter 14 in the form of a layer (only one element is visible in the figure).
- the width d of the emissive elements 14 is small compared to the width L of the slot 12.
- the distance separating the metal layer 15 from the emissive elements 14 is called S.
- the slot 12 can be rectangular.
- Figure 3 is a partial top view of the cathode structure shown in Figure 2 in the case where the slot 12 is rectangular.
- the slot 12 is then a groove of width L and whose dimension along the axis Z is that of the pixel of the screen.
- This slot geometry is more favorable than the circular geometry. Indeed, for reasons of symmetry, there is no lateral component of the electric field along the Z axis, therefore the emissive surface satisfying the condition E L ⁇ E X is greater in this geometry than in the cylindrical geometry .
- the ratio between the emissive surface and the surface of the hole is (d / L) 2 .
- this ratio is d / L. Since d / L is less than 1, the d / L ratio is therefore always greater than (d / L) 2 , which corresponds to a much brighter screen.
- Another advantageous embodiment is that where a resistive layer is added between the emissive layer and the cathode.
- the resistive layer protects the grid and the cathode from a possible short circuit.
- this resistive layer is very favorable to the operation of the screen like this. is announced in document EP-A-0 316 214 (corresponding to American patent No. 4,940,916).
- FIG. 4 is a schematic sectional view of a triode type cathode structure according to the invention with a resistive protective layer.
- This cathode structure comprises, in superposition, a cathode 23 supporting a resistive layer 26, an insulating layer 21 and a metal layer 25 forming an electron extraction grid.
- a slit 22 exposes the resistive layer 26.
- elements made of emissive material 24 rest on the resistive layer 26.
- a single element is visible in the figure.
- the fact that the emissive zone is located in the center of the slit or of the groove, over a small width, allows a directive emission of the electrons and provides a solution to the problems of resolution. This comes from the very low value of the parallel component of the electric field (E L / E X ⁇ 0.1) in the area where the emissive elements are located.
- the diagram in FIG. 5 shows the spatial distribution of the electric field for a cathode structure according to the invention.
- the diagram is drawn along the Y axis, the emissive element 24 and the resistive layer 26 being represented on the diagram.
- the spatial distribution of the electric field E is calculated for a hole width L equal to 14 ⁇ m.
- the lateral component E y referenced 31 is less than 10 times the minimum value of the normal component referenced 32.
- the lateral field referenced 33 and 34 becomes of comparable intensity to the normal field.
- the calculation is made for a voltage of 60 V on the grid.
- Shorted gate-cathode of the problems are eliminated by the central location and size of the reduced 'emissive elements with respect to the dimension of the groove or slot and by the optional presence of a resistive layer.
- the electric field induced by the grid is uniform and has only very small lateral components compared to the vertical component of the field.
- the emissive layer 44 is for example made up of carbon nanotubes 48.
- the distance S is greater than the average length h of the carbon nanotubes. Given the large dispersions of the lengths of the nanotubes, it is preferable to multiply this distance by a factor of one order of 2 or 3.
- the distance S can be of the order of 3 to 4 ⁇ m. These values are merely indicative and not limiting. It can be checked that for these dimensions the lateral component of the electric field is very weak compared to the normal component.
- FIGS. 7A to 7F illustrate a first method for producing a cathode structure of the triode type according to the invention, this method implementing vacuum deposition and photolithography techniques.
- the cathode conductor is obtained by depositing a conductive material, for example molybdenum, niobium, copper or ITO, on a support 50 (see FIG. 7A).
- a conductive material for example molybdenum, niobium, copper or ITO.
- the deposit of conductive material is etched in strips, typically 10 ⁇ m in width and not equal to 25 ⁇ m.
- FIG. 7A shows two bands which will be associated to form a cathode electrode 53.
- a resistive layer 56 1.5 ⁇ m thick in amorphous silicon then an insulating layer 51 1 ⁇ m thick in silica or in silicon nitride, finally a layer metallic 55 made of niobium or molybdenum intended to form the electron extraction grid.
- the metal layer 55 and the insulating layer 51 are then simultaneously etched with a slot or trench 52 15 ⁇ m wide until the resistive layer 56 is exposed. This is shown in FIG. 7C.
- FIG. 7D shows the structure obtained after the deposition of a sacrificial layer 57 of resin and the formation in the layer 57 of openings 58, of 6 ⁇ m in width and 10 to 15 ⁇ m in length, exposing the resistive layer 56.
- the openings 58 have a width corresponding to the width of the emissive layer to be produced.
- a catalytic deposition of iron, cobalt or nickel is then carried out on the structure.
- the catalytic deposition can advantageously be replaced by the deposition of a growth multilayer which can for example be a stack comprising TiN or TaN and a catalyst material such as Fe, Co, Ni or Pt. As shown in FIG.
- this catalytic deposit causes the formation of a discontinuous growth layer 59 on the sacrificial layer 57 and on the exposed part of the resistive layer 56.
- the sacrificial layer is then eliminated by a "lift-” technique. off ", which causes the parts of the growth layer located on this sacrificial layer to be eliminated. Parts of the growth layer remain in the central part of the resistive layer 56. This allows the growth of emissive layers 54.
- FIG. 7F shows only one element.
- FIGS. 8A to 8F illustrate a second method of producing a cathode structure of the triode type according to the invention, this method implementing vacuum deposition and photolithography techniques. It is a self-aligned process.
- the cathode conductor is obtained by depositing a conductive material, for example molybdenum, niobium, copper or ITO, on a support 150 (see FIG. 8A).
- Material deposition conductor is etched in strips, typically 10 ⁇ m in width and not equal to 25 ⁇ m.
- FIG. 8A shows two strips which will be associated to form a cathode electrode 153.
- FIG. 8B shows two deposits which will be associated to form a cathode electrode 153.
- Several deposits are then made as shown in FIG. 8B: a resistive layer 156 of 1.5 ⁇ m thick in amorphous silicon, then an insulating layer 151 1 ⁇ m thick in silica or silicon nitride, finally a metallic layer 155 made of niobium or molybdenum intended to form the electron extraction grid.
- each opening 158 can be 6 ⁇ m and its length 15 ⁇ m. This is shown in Figure 8C. A lateral engraving of the insulating layer
- FIG. 8E represents the structure obtained after the deposition of a layer of catalyst material 159.
- the deposition takes place on the sacrificial layer 157 and on the exposed part of the resistive layer 156.
- the catalyst can be iron, cobalt or nickel.
- the catalytic deposition can advantageously be replaced by the deposition of a growth multilayer which can for example be a stack comprising TiN or TaN and a catalyst material such as Fe, Co, Ni or Pt.
- FIG. 8F shows only one element.
- FIG. 9 is a more complete top view of a cathode structure of the triode type according to the invention. This structure was obtained by the second production method. We recognize the gate electrode 155, the emissive elements 154 and the resistive layer 156. The slots thus produced are not perfectly rectangular. They are slightly scalloped, which in no way affects the functioning of the device.
Landscapes
- Cold Cathode And The Manufacture (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Electrodes For Cathode-Ray Tubes (AREA)
- Overhead Projectors And Projection Screens (AREA)
Description
Claims
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0202075 | 2002-02-19 | ||
FR0202075A FR2836279B1 (fr) | 2002-02-19 | 2002-02-19 | Structure de cathode pour ecran emissif |
PCT/FR2003/000530 WO2003071571A1 (fr) | 2002-02-19 | 2003-02-18 | Structure de cathode pour ecran emissif |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1476888A1 true EP1476888A1 (fr) | 2004-11-17 |
EP1476888B1 EP1476888B1 (fr) | 2010-06-30 |
Family
ID=27636301
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP03717409A Expired - Lifetime EP1476888B1 (fr) | 2002-02-19 | 2003-02-18 | Structure de cathode pour ecran emissif |
Country Status (9)
Country | Link |
---|---|
US (1) | US7759851B2 (fr) |
EP (1) | EP1476888B1 (fr) |
JP (2) | JP2005518636A (fr) |
KR (1) | KR100944731B1 (fr) |
CN (1) | CN1316533C (fr) |
AT (1) | ATE472820T1 (fr) |
DE (1) | DE60333168D1 (fr) |
FR (1) | FR2836279B1 (fr) |
WO (1) | WO2003071571A1 (fr) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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FR2873852B1 (fr) * | 2004-07-28 | 2011-06-24 | Commissariat Energie Atomique | Structure de cathode a haute resolution |
FR2886284B1 (fr) | 2005-05-30 | 2007-06-29 | Commissariat Energie Atomique | Procede de realisation de nanostructures |
KR20070041983A (ko) | 2005-10-17 | 2007-04-20 | 삼성에스디아이 주식회사 | 전자 방출 표시 디바이스 |
JP2007149594A (ja) * | 2005-11-30 | 2007-06-14 | Kokusai Kiban Zairyo Kenkyusho:Kk | 冷陰極電界電子放出素子及び冷陰極電界電子放出素子の製造方法 |
KR20070083113A (ko) | 2006-02-20 | 2007-08-23 | 삼성에스디아이 주식회사 | 전자 방출 디바이스 및 이를 이용한 전자 방출 표시디바이스 |
KR20070083112A (ko) * | 2006-02-20 | 2007-08-23 | 삼성에스디아이 주식회사 | 전자 방출 디바이스와 이를 이용한 전자 방출 표시디바이스 |
FR2897718B1 (fr) | 2006-02-22 | 2008-10-17 | Commissariat Energie Atomique | Structure de cathode a nanotubes pour ecran emissif |
FR2912254B1 (fr) | 2007-02-06 | 2009-10-16 | Commissariat Energie Atomique | Structure emettrice d'electrons par effet de champ, a focalisation de l'emission |
JP2009245672A (ja) * | 2008-03-31 | 2009-10-22 | Univ Of Tokyo | フィールドエミッション装置、ならびに、その製造方法 |
CN104299988B (zh) * | 2014-09-26 | 2017-08-25 | 中国科学院半导体研究所 | 一种具有平面型发射阴极的纳米真空三极管及其制作方法 |
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2002
- 2002-02-19 FR FR0202075A patent/FR2836279B1/fr not_active Expired - Fee Related
-
2003
- 2003-02-18 AT AT03717409T patent/ATE472820T1/de not_active IP Right Cessation
- 2003-02-18 DE DE60333168T patent/DE60333168D1/de not_active Expired - Lifetime
- 2003-02-18 WO PCT/FR2003/000530 patent/WO2003071571A1/fr active Application Filing
- 2003-02-18 JP JP2003570380A patent/JP2005518636A/ja active Pending
- 2003-02-18 US US10/485,669 patent/US7759851B2/en not_active Expired - Fee Related
- 2003-02-18 KR KR1020047002418A patent/KR100944731B1/ko not_active IP Right Cessation
- 2003-02-18 CN CNB038009846A patent/CN1316533C/zh not_active Expired - Fee Related
- 2003-02-18 EP EP03717409A patent/EP1476888B1/fr not_active Expired - Lifetime
-
2010
- 2010-12-17 JP JP2010282102A patent/JP5425753B2/ja not_active Expired - Fee Related
Non-Patent Citations (1)
Title |
---|
See references of WO03071571A1 * |
Also Published As
Publication number | Publication date |
---|---|
JP5425753B2 (ja) | 2014-02-26 |
FR2836279B1 (fr) | 2004-09-24 |
KR100944731B1 (ko) | 2010-03-03 |
US7759851B2 (en) | 2010-07-20 |
WO2003071571A1 (fr) | 2003-08-28 |
WO2003071571A8 (fr) | 2004-04-29 |
DE60333168D1 (de) | 2010-08-12 |
FR2836279A1 (fr) | 2003-08-22 |
CN1552084A (zh) | 2004-12-01 |
ATE472820T1 (de) | 2010-07-15 |
JP2011103303A (ja) | 2011-05-26 |
JP2005518636A (ja) | 2005-06-23 |
US20040256969A1 (en) | 2004-12-23 |
EP1476888B1 (fr) | 2010-06-30 |
KR20040079404A (ko) | 2004-09-14 |
CN1316533C (zh) | 2007-05-16 |
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