FR2873852B1 - Structure de cathode a haute resolution - Google Patents

Structure de cathode a haute resolution

Info

Publication number
FR2873852B1
FR2873852B1 FR0451686A FR0451686A FR2873852B1 FR 2873852 B1 FR2873852 B1 FR 2873852B1 FR 0451686 A FR0451686 A FR 0451686A FR 0451686 A FR0451686 A FR 0451686A FR 2873852 B1 FR2873852 B1 FR 2873852B1
Authority
FR
France
Prior art keywords
high resolution
cathode structure
resolution cathode
resolution
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0451686A
Other languages
English (en)
Other versions
FR2873852A1 (fr
Inventor
Jean Dijon
Robert Meyer
Francois Levy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0451686A priority Critical patent/FR2873852B1/fr
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to CN2004800436941A priority patent/CN1993792B/zh
Priority to JP2007522917A priority patent/JP2008508665A/ja
Priority to PCT/EP2004/052666 priority patent/WO2006010387A1/fr
Priority to KR1020077001972A priority patent/KR20070039092A/ko
Priority to US11/632,944 priority patent/US7880375B2/en
Priority to EP04791313A priority patent/EP1771871B1/fr
Publication of FR2873852A1 publication Critical patent/FR2873852A1/fr
Application granted granted Critical
Publication of FR2873852B1 publication Critical patent/FR2873852B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123—Flat display tubes
    • H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30469—Carbon nanotubes (CNTs)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels
    • H01J2329/02—Electrodes other than control electrodes
    • H01J2329/04—Cathode electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
FR0451686A 2004-07-28 2004-07-28 Structure de cathode a haute resolution Expired - Fee Related FR2873852B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR0451686A FR2873852B1 (fr) 2004-07-28 2004-07-28 Structure de cathode a haute resolution
JP2007522917A JP2008508665A (ja) 2004-07-28 2004-10-26 高解像度陰極構造
PCT/EP2004/052666 WO2006010387A1 (fr) 2004-07-28 2004-10-26 Structure de cathode a haute resolution
KR1020077001972A KR20070039092A (ko) 2004-07-28 2004-10-26 고 해상도 캐소드 구조
CN2004800436941A CN1993792B (zh) 2004-07-28 2004-10-26 高分辨率阴极结构
US11/632,944 US7880375B2 (en) 2004-07-28 2004-10-26 Triode cathode apparatus and method of making a triode cathode apparatus
EP04791313A EP1771871B1 (fr) 2004-07-28 2004-10-26 Structure de cathode a haute resolution

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0451686A FR2873852B1 (fr) 2004-07-28 2004-07-28 Structure de cathode a haute resolution

Publications (2)

Publication Number Publication Date
FR2873852A1 FR2873852A1 (fr) 2006-02-03
FR2873852B1 true FR2873852B1 (fr) 2011-06-24

Family

ID=34946792

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0451686A Expired - Fee Related FR2873852B1 (fr) 2004-07-28 2004-07-28 Structure de cathode a haute resolution

Country Status (7)

Country Link
US (1) US7880375B2 (fr)
EP (1) EP1771871B1 (fr)
JP (1) JP2008508665A (fr)
KR (1) KR20070039092A (fr)
CN (1) CN1993792B (fr)
FR (1) FR2873852B1 (fr)
WO (1) WO2006010387A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2886284B1 (fr) 2005-05-30 2007-06-29 Commissariat Energie Atomique Procede de realisation de nanostructures
KR20070083113A (ko) 2006-02-20 2007-08-23 삼성에스디아이 주식회사 전자 방출 디바이스 및 이를 이용한 전자 방출 표시디바이스
FR2912254B1 (fr) 2007-02-06 2009-10-16 Commissariat Energie Atomique Structure emettrice d'electrons par effet de champ, a focalisation de l'emission
FR2917191B1 (fr) 2007-06-11 2010-06-11 Commissariat Energie Atomique Dispositif d'eclairage pour ecran a cristal liquide
US7627087B2 (en) * 2007-06-28 2009-12-01 General Electric Company One-dimensional grid mesh for a high-compression electron gun
EP2272100B1 (fr) * 2008-04-17 2017-08-02 Lawrence Livermore National Security, LLC Système et procédé de modulation des signaux electriques utilisant des semiconducteurs photoconducteurs à large bande interdite comme resistances variables
US20140284451A1 (en) * 2013-03-15 2014-09-25 Lawrence Livermore National Security, Llc Reducing localized high electric fields in photoconductive wide bandgap semiconductors

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2656851B2 (ja) * 1990-09-27 1997-09-24 工業技術院長 画像表示装置
DE69328977T2 (de) * 1992-12-23 2000-12-28 Si Diamond Techn Inc Flache feldemissionskathode anwendende flache anzeigevorrichtung mit triodenstruktur
FR2707795B1 (fr) * 1993-07-12 1995-08-11 Commissariat Energie Atomique Perfectionnement à un procédé de fabrication d'une source d'électrons à micropointes.
JPH08115654A (ja) * 1994-10-14 1996-05-07 Sony Corp 粒子放出装置、電界放出型装置及びこれらの製造方法
JPH09245689A (ja) * 1996-03-13 1997-09-19 Toshiba Corp 電界放出型冷陰極を用いた画像表示装置
JP3171121B2 (ja) * 1996-08-29 2001-05-28 双葉電子工業株式会社 電界放出型表示装置
JP2000294115A (ja) * 1999-04-05 2000-10-20 Sony Corp 冷陰極電界電子放出素子及びその製造方法、並びに、冷陰極電界電子放出表示装置
US6062931A (en) * 1999-09-01 2000-05-16 Industrial Technology Research Institute Carbon nanotube emitter with triode structure
US6756730B2 (en) * 2001-06-08 2004-06-29 Sony Corporation Field emission display utilizing a cathode frame-type gate and anode with alignment method
JP4810010B2 (ja) * 2001-07-03 2011-11-09 キヤノン株式会社 電子放出素子
JP2003151456A (ja) * 2001-11-12 2003-05-23 Sony Corp 冷陰極電界電子放出表示装置用カソードパネル及び冷陰極電界電子放出表示装置、並びに、冷陰極電界電子放出表示装置用カソードパネルの製造方法
JP2003203554A (ja) * 2002-01-08 2003-07-18 Matsushita Electric Ind Co Ltd 電子放出素子
FR2836280B1 (fr) * 2002-02-19 2004-04-02 Commissariat Energie Atomique Structure de cathode a couche emissive formee sur une couche resistive
FR2836279B1 (fr) * 2002-02-19 2004-09-24 Commissariat Energie Atomique Structure de cathode pour ecran emissif
US6791278B2 (en) * 2002-04-16 2004-09-14 Sony Corporation Field emission display using line cathode structure
TW594824B (en) * 2002-12-03 2004-06-21 Ind Tech Res Inst Triode structure of field-emission display and manufacturing method thereof
KR100493163B1 (ko) * 2002-12-10 2005-06-02 삼성에스디아이 주식회사 전계방출소자
US20040145299A1 (en) * 2003-01-24 2004-07-29 Sony Corporation Line patterned gate structure for a field emission display
FR2863102B1 (fr) 2003-12-02 2006-04-28 Commissariat Energie Atomique Dispositifs a emission de champ.
FR2872826B1 (fr) * 2004-07-07 2006-09-15 Commissariat Energie Atomique Croissance a basse temperature de nanotubes de carbone orientes
FR2886284B1 (fr) 2005-05-30 2007-06-29 Commissariat Energie Atomique Procede de realisation de nanostructures
FR2897718B1 (fr) 2006-02-22 2008-10-17 Commissariat Energie Atomique Structure de cathode a nanotubes pour ecran emissif

Also Published As

Publication number Publication date
FR2873852A1 (fr) 2006-02-03
US7880375B2 (en) 2011-02-01
CN1993792A (zh) 2007-07-04
WO2006010387A1 (fr) 2006-02-02
KR20070039092A (ko) 2007-04-11
EP1771871B1 (fr) 2012-06-06
JP2008508665A (ja) 2008-03-21
EP1771871A1 (fr) 2007-04-11
US20080084152A1 (en) 2008-04-10
CN1993792B (zh) 2010-04-28

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20130329