FR2780808B1 - Dispositif a emission de champ et procedes de fabrication - Google Patents

Dispositif a emission de champ et procedes de fabrication

Info

Publication number
FR2780808B1
FR2780808B1 FR9808554A FR9808554A FR2780808B1 FR 2780808 B1 FR2780808 B1 FR 2780808B1 FR 9808554 A FR9808554 A FR 9808554A FR 9808554 A FR9808554 A FR 9808554A FR 2780808 B1 FR2780808 B1 FR 2780808B1
Authority
FR
France
Prior art keywords
field emission
manufacturing methods
emission device
manufacturing
methods
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9808554A
Other languages
English (en)
Other versions
FR2780808A1 (fr
Inventor
Pierre Legagneux
Didier Pribat
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR9808554A priority Critical patent/FR2780808B1/fr
Priority to US09/486,693 priority patent/US6476408B1/en
Priority to PCT/FR1999/001596 priority patent/WO2000002222A1/fr
Priority to JP2000558531A priority patent/JP2002520770A/ja
Publication of FR2780808A1 publication Critical patent/FR2780808A1/fr
Application granted granted Critical
Publication of FR2780808B1 publication Critical patent/FR2780808B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
FR9808554A 1998-07-03 1998-07-03 Dispositif a emission de champ et procedes de fabrication Expired - Fee Related FR2780808B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR9808554A FR2780808B1 (fr) 1998-07-03 1998-07-03 Dispositif a emission de champ et procedes de fabrication
US09/486,693 US6476408B1 (en) 1998-07-03 1999-07-02 Field emission device
PCT/FR1999/001596 WO2000002222A1 (fr) 1998-07-03 1999-07-02 Dispositif a emission de champ
JP2000558531A JP2002520770A (ja) 1998-07-03 1999-07-02 電界放射素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9808554A FR2780808B1 (fr) 1998-07-03 1998-07-03 Dispositif a emission de champ et procedes de fabrication

Publications (2)

Publication Number Publication Date
FR2780808A1 FR2780808A1 (fr) 2000-01-07
FR2780808B1 true FR2780808B1 (fr) 2001-08-10

Family

ID=9528246

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9808554A Expired - Fee Related FR2780808B1 (fr) 1998-07-03 1998-07-03 Dispositif a emission de champ et procedes de fabrication

Country Status (4)

Country Link
US (1) US6476408B1 (fr)
JP (1) JP2002520770A (fr)
FR (1) FR2780808B1 (fr)
WO (1) WO2000002222A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000260299A (ja) * 1999-03-09 2000-09-22 Matsushita Electric Ind Co Ltd 冷電子放出素子及びその製造方法
US6648711B1 (en) 1999-06-16 2003-11-18 Iljin Nanotech Co., Ltd. Field emitter having carbon nanotube film, method of fabricating the same, and field emission display device using the field emitter
FR2829873B1 (fr) * 2001-09-20 2006-09-01 Thales Sa Procede de croissance localisee de nanotubes et procede de fabrication de cathode autoalignee utilisant le procede de croissance de nanotubes
FR2836280B1 (fr) * 2002-02-19 2004-04-02 Commissariat Energie Atomique Structure de cathode a couche emissive formee sur une couche resistive
FR2836279B1 (fr) * 2002-02-19 2004-09-24 Commissariat Energie Atomique Structure de cathode pour ecran emissif
FR2879342B1 (fr) * 2004-12-15 2008-09-26 Thales Sa Cathode a emission de champ, a commande optique
KR20070083113A (ko) * 2006-02-20 2007-08-23 삼성에스디아이 주식회사 전자 방출 디바이스 및 이를 이용한 전자 방출 표시디바이스
FR2909801B1 (fr) * 2006-12-08 2009-01-30 Thales Sa Tube electronique a cathode froide

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2485796A1 (fr) 1980-06-24 1981-12-31 Thomson Csf Resistance electrique chauffante et tete d'imprimante thermique comportant de telles resistances chauffantes
US4498952A (en) * 1982-09-17 1985-02-12 Condesin, Inc. Batch fabrication procedure for manufacture of arrays of field emitted electron beams with integral self-aligned optical lense in microguns
FR2542500B1 (fr) 1983-03-11 1986-08-29 Thomson Csf Procede de fabrication d'un dispositif semiconducteur du type comprenant au moins une couche de silicium deposee sur un substrat isolant
FR2620868B1 (fr) 1987-09-22 1994-03-25 Thomson Csf Procede de realisation de microcavites et application a un capteur electrochimique ainsi qu'a un chomatographe en phase gazeuse
FR2621126B1 (fr) 1987-09-25 1994-04-15 Thomson Csf Capteur electrochimique, a structure integree, de mesure de concentrations relatives d'especes reactives
FR2626409B1 (fr) 1988-01-22 1991-09-06 Thomson Csf Dispositif en materiau supraconducteur et procede de realisation
WO1989009479A1 (fr) 1988-03-25 1989-10-05 Thomson-Csf Procede de fabrication de sources d'electrons du type a emission de champ, et son application a la realisation de reseaux d'emetteurs
FR2629637B1 (fr) 1988-04-05 1990-11-16 Thomson Csf Procede de realisation d'une alternance de couches de materiau semiconducteur monocristallin et de couches de materiau isolant
FR2629636B1 (fr) 1988-04-05 1990-11-16 Thomson Csf Procede de realisation d'une alternance de couches de materiau semiconducteur monocristallin et de couches de materiau isolant
FR2634059B1 (fr) 1988-07-08 1996-04-12 Thomson Csf Microcomposant electronique autoscelle sous vide, notamment diode, ou triode, et procede de fabrication correspondant
FR2636737B1 (fr) 1988-09-16 1993-12-03 Thomson Csf Capteur de type resistif, de mesure de concentrations relatives d'especes reactives fluides, compense en temperature
FR2637126B1 (fr) 1988-09-23 1992-05-07 Thomson Csf Composant tel que diode, triode ou dispositif d'affichage cathodoluminescent plat et integre, et procede de fabrication
FR2640428B1 (fr) 1988-12-09 1992-10-30 Thomson Csf Procede de durcissement vis-a-vis des rayonnements ionisants de composants electroniques actifs, et composants durcis de grandes dimensions
FR2645345A1 (fr) 1989-03-31 1990-10-05 Thomson Csf Procede de modulation dirigee de la composition ou du dopage de semi-conducteurs, notamment pour la realisation de composants electroniques monolithiques de type planar, utilisation et produits correspondants
FR2658839B1 (fr) 1990-02-23 1997-06-20 Thomson Csf Procede de croissance controlee de cristaux aciculaires et application a la realisation de microcathodes a pointes.
FR2666172B1 (fr) 1990-08-24 1997-05-16 Thomson Csf Transistor de puissance et procede de realisation.
FR2667617B1 (fr) 1990-10-09 1992-11-27 Thomson Csf Procede de croissance de couches heteroepitaxiales.
FR2669465B1 (fr) 1990-11-16 1996-07-12 Thomson Rech Source d'electrons et procede de realisation.
FR2682128B1 (fr) 1991-10-08 1993-12-03 Thomson Csf Procede de croissance de couches heteroepitaxiales.
US5679043A (en) * 1992-03-16 1997-10-21 Microelectronics And Computer Technology Corporation Method of making a field emitter
FR2689680B1 (fr) 1992-04-02 2001-08-10 Thomson Csf Procédé de réalisation de couches minces hétéroépitaxiales et de dispositifs électroniques.
US5268648A (en) * 1992-07-13 1993-12-07 The United States Of America As Represented By The Secretary Of The Air Force Field emitting drain field effect transistor
US5619092A (en) * 1993-02-01 1997-04-08 Motorola Enhanced electron emitter
JP2809129B2 (ja) * 1995-04-20 1998-10-08 日本電気株式会社 電界放射冷陰極とこれを用いた表示装置
US6204595B1 (en) * 1995-07-10 2001-03-20 The Regents Of The University Of California Amorphous-diamond electron emitter
ES2313737T3 (es) * 1996-07-17 2009-03-01 Sloan-Kettering Institute For Cancer Research Composiciones purificadas de 10-propargil-10-deazaaminopterina y sus metodos de uso en el tratamiento de tumores.
JP3171121B2 (ja) * 1996-08-29 2001-05-28 双葉電子工業株式会社 電界放出型表示装置
TW353758B (en) * 1996-09-30 1999-03-01 Motorola Inc Electron emissive film and method
US6020677A (en) * 1996-11-13 2000-02-01 E. I. Du Pont De Nemours And Company Carbon cone and carbon whisker field emitters
JP4032454B2 (ja) * 1997-06-27 2008-01-16 ソニー株式会社 三次元回路素子の製造方法

Also Published As

Publication number Publication date
WO2000002222A1 (fr) 2000-01-13
JP2002520770A (ja) 2002-07-09
US6476408B1 (en) 2002-11-05
FR2780808A1 (fr) 2000-01-07

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Legal Events

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CD Change of name or company name
ST Notification of lapse

Effective date: 20080331