JP2005518636A - 放出ディスプレイの陰極構造 - Google Patents

放出ディスプレイの陰極構造 Download PDF

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Publication number
JP2005518636A
JP2005518636A JP2003570380A JP2003570380A JP2005518636A JP 2005518636 A JP2005518636 A JP 2005518636A JP 2003570380 A JP2003570380 A JP 2003570380A JP 2003570380 A JP2003570380 A JP 2003570380A JP 2005518636 A JP2005518636 A JP 2005518636A
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Japan
Prior art keywords
layer
cathode
cathode structure
electron emission
slit
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Pending
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JP2003570380A
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English (en)
Japanese (ja)
Inventor
デジョン，ジャン
フルニエ，アデリーヌ
モンマヨール，ブリジット
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コミツサリア タ レネルジー アトミーク
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Publication of JP2005518636A publication Critical patent/JP2005518636A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30469—Carbon nanotubes (CNTs)
JP2003570380A 2002-02-19 2003-02-18 放出ディスプレイの陰極構造 Pending JP2005518636A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0202075A FR2836279B1 (fr) 2002-02-19 2002-02-19 Structure de cathode pour ecran emissif
PCT/FR2003/000530 WO2003071571A1 (fr) 2002-02-19 2003-02-18 Structure de cathode pour ecran emissif

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010282102A Division JP5425753B2 (ja) 2002-02-19 2010-12-17 放出ディスプレイの陰極構造

Publications (1)

Publication Number Publication Date
JP2005518636A true JP2005518636A (ja) 2005-06-23

Family

ID=27636301

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2003570380A Pending JP2005518636A (ja) 2002-02-19 2003-02-18 放出ディスプレイの陰極構造
JP2010282102A Expired - Fee Related JP5425753B2 (ja) 2002-02-19 2010-12-17 放出ディスプレイの陰極構造

Family Applications After (1)

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JP2010282102A Expired - Fee Related JP5425753B2 (ja) 2002-02-19 2010-12-17 放出ディスプレイの陰極構造

Country Status (9)

Country Link
US (1) US7759851B2 (enExample)
EP (1) EP1476888B1 (enExample)
JP (2) JP2005518636A (enExample)
KR (1) KR100944731B1 (enExample)
CN (1) CN1316533C (enExample)
AT (1) ATE472820T1 (enExample)
DE (1) DE60333168D1 (enExample)
FR (1) FR2836279B1 (enExample)
WO (1) WO2003071571A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007149594A (ja) * 2005-11-30 2007-06-14 Kokusai Kiban Zairyo Kenkyusho:Kk 冷陰極電界電子放出素子及び冷陰極電界電子放出素子の製造方法
JP2007227380A (ja) * 2006-02-22 2007-09-06 Commiss Energ Atom 放射スクリーン用のナノチューブを有するカソード構造
JP2009245672A (ja) * 2008-03-31 2009-10-22 Univ Of Tokyo フィールドエミッション装置、ならびに、その製造方法
US7652419B2 (en) 2006-02-20 2010-01-26 Samsung Sdi Co., Ltd. Electron emission device and electron emission display using the same

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JP2562388Y2 (ja) 1991-08-05 1998-02-10 株式会社石井製作所 集塵機
FR2873852B1 (fr) * 2004-07-28 2011-06-24 Commissariat Energie Atomique Structure de cathode a haute resolution
FR2886284B1 (fr) 2005-05-30 2007-06-29 Commissariat Energie Atomique Procede de realisation de nanostructures
KR20070041983A (ko) * 2005-10-17 2007-04-20 삼성에스디아이 주식회사 전자 방출 표시 디바이스
KR20070083113A (ko) * 2006-02-20 2007-08-23 삼성에스디아이 주식회사 전자 방출 디바이스 및 이를 이용한 전자 방출 표시디바이스
FR2912254B1 (fr) 2007-02-06 2009-10-16 Commissariat Energie Atomique Structure emettrice d'electrons par effet de champ, a focalisation de l'emission
CN104299988B (zh) * 2014-09-26 2017-08-25 中国科学院半导体研究所 一种具有平面型发射阴极的纳米真空三极管及其制作方法

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JP2000243218A (ja) * 1999-02-17 2000-09-08 Nec Corp 電子放出装置及びその駆動方法
JP2000251614A (ja) * 1999-02-24 2000-09-14 Futaba Corp 電界放出素子及びその製造方法
JP2000340098A (ja) * 1999-05-26 2000-12-08 Nec Corp 電界放出型冷陰極とその製造方法および平面ディスプレイの製造方法

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DE69211581T2 (de) * 1991-03-13 1997-02-06 Sony Corp Anordnung von Feldemissionskathoden
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JP2669749B2 (ja) * 1992-03-27 1997-10-29 工業技術院長 電界放出素子
JPH08505259A (ja) * 1992-12-23 1996-06-04 エスアイ ダイアモンド テクノロジー，インコーポレイテッド フラットな電界放出カソードを用いたトライオード構造のフラットパネルディスプレイ
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FR2702869B1 (fr) * 1993-03-17 1995-04-21 Commissariat Energie Atomique Dispositif d'affichage à micropointes et procédé de fabrication de ce dispositif.
JP2892587B2 (ja) 1994-03-09 1999-05-17 双葉電子工業株式会社 電界放出素子及びその製造方法
JP2809129B2 (ja) * 1995-04-20 1998-10-08 日本電気株式会社 電界放射冷陰極とこれを用いた表示装置
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JP2001023506A (ja) * 1999-07-07 2001-01-26 Sony Corp 電子放出源およびその製造方法ならびにディスプレイ装置
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JP3600126B2 (ja) 1999-07-29 2004-12-08 シャープ株式会社 電子源アレイ及び電子源アレイの駆動方法
JP4043153B2 (ja) 1999-07-30 2008-02-06 双葉電子工業株式会社 電子放出源の製造方法、エミッタ基板の製造方法、電子放出源及び蛍光発光型表示器
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KR100464314B1 (ko) * 2000-01-05 2004-12-31 삼성에스디아이 주식회사 전계방출소자 및 그 제조방법
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Publication number Priority date Publication date Assignee Title
JPH1031954A (ja) * 1996-07-12 1998-02-03 Futaba Corp 電界放出素子およびその製造方法
JP2000243218A (ja) * 1999-02-17 2000-09-08 Nec Corp 電子放出装置及びその駆動方法
JP2000251614A (ja) * 1999-02-24 2000-09-14 Futaba Corp 電界放出素子及びその製造方法
JP2000340098A (ja) * 1999-05-26 2000-12-08 Nec Corp 電界放出型冷陰極とその製造方法および平面ディスプレイの製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007149594A (ja) * 2005-11-30 2007-06-14 Kokusai Kiban Zairyo Kenkyusho:Kk 冷陰極電界電子放出素子及び冷陰極電界電子放出素子の製造方法
US7652419B2 (en) 2006-02-20 2010-01-26 Samsung Sdi Co., Ltd. Electron emission device and electron emission display using the same
JP2007227380A (ja) * 2006-02-22 2007-09-06 Commiss Energ Atom 放射スクリーン用のナノチューブを有するカソード構造
JP2009245672A (ja) * 2008-03-31 2009-10-22 Univ Of Tokyo フィールドエミッション装置、ならびに、その製造方法

Also Published As

Publication number Publication date
EP1476888B1 (fr) 2010-06-30
KR20040079404A (ko) 2004-09-14
EP1476888A1 (fr) 2004-11-17
ATE472820T1 (de) 2010-07-15
US20040256969A1 (en) 2004-12-23
CN1316533C (zh) 2007-05-16
FR2836279B1 (fr) 2004-09-24
DE60333168D1 (de) 2010-08-12
KR100944731B1 (ko) 2010-03-03
JP5425753B2 (ja) 2014-02-26
US7759851B2 (en) 2010-07-20
JP2011103303A (ja) 2011-05-26
WO2003071571A8 (fr) 2004-04-29
CN1552084A (zh) 2004-12-01
WO2003071571A1 (fr) 2003-08-28
FR2836279A1 (fr) 2003-08-22

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