KR100903902B1 - 변형 채널 영역을 갖는 비평면형 mos 구조 - Google Patents
변형 채널 영역을 갖는 비평면형 mos 구조 Download PDFInfo
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- KR100903902B1 KR100903902B1 KR1020077016441A KR20077016441A KR100903902B1 KR 100903902 B1 KR100903902 B1 KR 100903902B1 KR 1020077016441 A KR1020077016441 A KR 1020077016441A KR 20077016441 A KR20077016441 A KR 20077016441A KR 100903902 B1 KR100903902 B1 KR 100903902B1
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- silicon
- silicon germanium
- germanium
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 113
- 229910052710 silicon Inorganic materials 0.000 claims description 113
- 239000010703 silicon Substances 0.000 claims description 113
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 95
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 95
- 239000000758 substrate Substances 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 34
- 229910052732 germanium Inorganic materials 0.000 claims description 16
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 16
- 238000000137 annealing Methods 0.000 claims description 10
- 239000002019 doping agent Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- -1 lanthanum aluminate Chemical class 0.000 claims description 4
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052454 barium strontium titanate Inorganic materials 0.000 claims description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 2
- 229910002113 barium titanate Inorganic materials 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- JQJCSZOEVBFDKO-UHFFFAOYSA-N lead zinc Chemical compound [Zn].[Pb] JQJCSZOEVBFDKO-UHFFFAOYSA-N 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052706 scandium Inorganic materials 0.000 claims description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 2
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- 238000000151 deposition Methods 0.000 description 13
- 230000008021 deposition Effects 0.000 description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 238000002513 implantation Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000001459 lithography Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000005923 long-lasting effect Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
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- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L29/78687—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys with a multilayer structure or superlattice structure
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Abstract
Description
Claims (30)
- 기판 상에 형성되고 상기 기판과 전기적으로 분리된, 상부 및 2개의 측벽을 갖는 실리콘 게르마늄 바디(body);상기 실리콘 게르마늄 바디의 상기 측벽들 상에 형성된 도핑된 변형 실리콘 막(doped strained silicon film);상기 도핑된 변형 실리콘 막 상에 형성된 게이트 유전체;상기 게이트 유전체 상에 형성된 게이트; 및상기 변형 실리콘에 형성된 소스 및 드레인을 포함하는 비평면형 트랜지스터(non-planar transistor).
- 제1항에 있어서,상기 실리콘 게르마늄 바디는 5%와 80% 사이의 게르마늄 농도를 포함하는 비평면형 트랜지스터.
- 제2항에 있어서,상기 실리콘 게르마늄 바디는 15%의 게르마늄 농도를 포함하는 비평면형 트랜지스터.
- 제1항에 있어서,상기 게이트 유전체는 이산화규소(silicon dioxide), 하프늄 산화물(hafnium oxide), 하프늄 실리케이트(hafnium silicate), 란타늄 산화물(lanthanum oxide), 란타늄 알루미네이트(lanthanum aluminate), 지르코늄 산화물(zirconium oxide), 지르코늄 실리케이트(zirconium silicate), 탄탈륨 산화물(tantalum oxide), 티타늄 산화물(titanium oxide), 바륨 스트론튬 티타네이트(barium strontium titanate), 바륨 티타네이트(barium titanate), 스트론튬 티타네이트(strontium titanate), 이트륨 산화물(yttrium oxide), 알루미늄 산화물(aluminum oxide), 납 스칸듐 탄타네이트(lead scandium tantanate), 및 납 아연 니오베이트(lead zinc niobate)를 포함하는 군에서 선택된 물질을 포함하는 비평면형 트랜지스터.
- 제1항에 있어서,상기 게이트는 폴리실리콘(polysilicon), 금속, 및 그들의 조합을 포함하는 군에서 선택된 물질을 포함하는 비평면형 트랜지스터.
- 제1항에 있어서,상기 실리콘 게르마늄 바디는 실질적으로 사각형 단면을 갖고 상기 도핑된 변형 실리콘 막이 상기 실리콘 게르마늄 바디의 상기 상부 및 양쪽 측벽 상에 형성된 비평면형 트랜지스터.
- 제1항에 있어서,상기 실리콘 게르마늄 바디는 실질적으로 사다리꼴 단면을 갖고 상기 도핑된 변형 실리콘 막이 상기 실리콘 게르마늄 바디의 상기 상부 및 양쪽 측벽 상에 형성된 비평면형 트랜지스터.
- 제1항에 있어서,상기 도핑된 변형 실리콘 막은 2㎚와 10㎚ 사이의 두께를 갖는 비평면형 트랜지스터.
- 제8항에 있어서,상기 도핑된 변형 실리콘 막은 4㎚와 5㎚ 사이의 두께를 갖는 비평면형 트랜지스터.
- 상부 표면 및 2개의 측벽 표면을 포함하는, 절연체 상에 형성된 실리콘 게르마늄 핀(fin);상기 실리콘 게르마늄 핀의 상기 상부 표면 및 2개의 측벽 표면 상에 형성된 도핑된 변형 실리콘 막;상기 도핑된 변형 실리콘 막 상에 형성된 게이트 유전체;게이트가 상기 실리콘 게르마늄 핀의 상기 상부 표면 위로 연장하는, 상기 게이트 유전체 상에 형성된 상기 게이트; 및상기 변형 실리콘 막에 형성된 소스 및 드레인을 포함하는 3중 게이트 트랜지스터(tri-gate transistor).
- 제10항에 있어서,상기 실리콘 게르마늄 핀은 5%와 80% 사이의 게르마늄 농도를 포함하는 3중 게이트 트랜지스터.
- 제11항에 있어서,상기 실리콘 게르마늄 핀은 15%의 게르마늄 농도를 포함하는 3중 게이트 트랜지스터.
- 제10항에 있어서,상기 변형 실리콘 막은 2㎚와 10㎚ 사이의 두께를 갖는 3중 게이트 트랜지스터.
- 제13항에 있어서,상기 변형 실리콘 막은 4㎚와 5㎚ 사이의 두께를 갖는 3중 게이트 트랜지스터.
- 삭제
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- 삭제
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- 삭제
- 제10항에 있어서,상기 실리콘 게르마늄 핀은 도핑된 3중 게이트 트랜지스터.
- 제20항에 있어서,상기 실리콘 게르마늄 핀은 거의 도핑되지 않은 상태와 6×1019/㎤ 사이의 p-도펀트 농도로 도핑된 3중 게이트 트랜지스터.
- 제10항에 있어서,상기 변형 실리콘은 거의 도핑되지 않은 상태와 6×1019/㎤ 사이의 p-도펀트 농도로 도핑된 3중 게이트 트랜지스터.
- 기판 상에 형성되고 상기 기판과 전기적으로 분리되며 상부 및 2개의 측벽을 갖는 실리콘 게르마늄 바디 - 상기 실리콘 게르마늄 바디는 실리콘 층과 상호 확산된 실리콘 게르마늄 층을 포함하여 상기 실리콘 층이 실질적으로 균일한 게르마늄 농도를 가짐 - ;상기 실리콘 게르마늄 바디의 상기 측벽들 상에 형성된 변형 실리콘 막;상기 도핑된 변형 실리콘 막 상에 형성된 게이트 유전체;상기 게이트 유전체 상에 형성된 게이트; 및상기 도핑된 변형 실리콘 막에 형성된 소스 및 드레인을 포함하는 비평면형 트랜지스터.
- 제23항에 있어서,상기 실리콘 게르마늄 바디는 실질적으로 사각형인 단면을 갖고 상기 변형 실리콘 막이 상기 실리콘 게르마늄 바디의 상기 상부 및 양쪽 측벽 상에 형성되는 비평면형 트랜지스터.
- 제23항에 있어서,상기 실리콘 게르마늄 바디는 도핑된 비평면형 트랜지스터.
- 제25항에 있어서,상기 실리콘 게르마늄 바디는 거의 도핑되지 않은 상태와 6×1019/㎤ 사이의 p-도펀트 농도로 도핑된 비평면형 트랜지스터.
- 제23항에 있어서,상기 변형 실리콘 막은 도핑된 비평면형 트랜지스터.
- 절연 기판 상에 실리콘 막을 제공하는 단계;실리콘 기판 상에 실리콘 게르마늄 막을 성장시키는 단계;상기 절연 기판의 상기 실리콘 막에 상기 실리콘 게르마늄 막을 부착하는 단계;상기 실리콘 기판의 일부를 제거하여 상기 절연 웨이퍼 상의 상기 실리콘 게르마늄 막 상의 상기 실리콘 기판으로부터의 실리콘 층을 남기는 단계;상기 절연 기판을 어닐링함으로써 상기 실리콘 게르마늄 막으로부터의 게르마늄을 상기 절연 기판 상의 상기 실리콘 막으로 그리고 상기 실리콘 기판으로부터의 상기 실리콘 층으로 확산시켜, 상기 절연 기판 상의 상기 실리콘 막, 상기 실리콘 기판으로부터의 상기 실리콘 층, 및 상기 실리콘 게르마늄 막으로부터 이완된 실리콘 게르마늄 막을 형성하는 단계;상기 이완된 실리콘 게르마늄 막으로부터 상부 표면 및 2개의 측벽 표면을 갖는 핀을 형성하는 단계;상기 핀의 상기 상부 표면 및 상기 측벽들 상에 변형 실리콘 층을 형성하는 단계;상기 변형 실리콘 층 상에 게이트 유전체 층을 형성하는 단계; 및상기 게이트 유전체 상에 게이트 전극을 형성하는 단계를 포함하는 방법.
- 제28항에 있어서,상기 어닐링은 상기 이완된 실리콘 게르마늄 막에서 실질적으로 균일한 게르마늄의 조성을 제공하는 방법.
- 제28항에 있어서,상기 변형 실리콘 막은 도핑된 방법.
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US20030227036A1 (en) * | 2002-02-22 | 2003-12-11 | Naoharu Sugiyama | Semiconductor device |
US20040061178A1 (en) * | 2002-09-30 | 2004-04-01 | Advanced Micro Devices Inc. | Finfet having improved carrier mobility and method of its formation |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101089659B1 (ko) | 2009-06-03 | 2011-12-06 | 서울대학교산학협력단 | 돌출된 바디를 저장노드로 하는 메모리 셀 및 그 제조방법 |
Also Published As
Publication number | Publication date |
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WO2006078469A1 (en) | 2006-07-27 |
GB2437867A (en) | 2007-11-07 |
DE112006000229T5 (de) | 2007-11-08 |
US7531393B2 (en) | 2009-05-12 |
US20060157794A1 (en) | 2006-07-20 |
GB2437867B (en) | 2008-07-09 |
US7193279B2 (en) | 2007-03-20 |
JP2008527742A (ja) | 2008-07-24 |
JP5408880B2 (ja) | 2014-02-05 |
CN101142688A (zh) | 2008-03-12 |
TW200711157A (en) | 2007-03-16 |
TWI309091B (en) | 2009-04-21 |
GB0714637D0 (en) | 2007-09-05 |
US20060157687A1 (en) | 2006-07-20 |
KR20070089743A (ko) | 2007-08-31 |
DE112006000229B4 (de) | 2016-04-14 |
CN101142688B (zh) | 2012-05-23 |
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