FR2881877B1 - Transistor a effet de champ multi-grille a canal multi-couche - Google Patents

Transistor a effet de champ multi-grille a canal multi-couche

Info

Publication number
FR2881877B1
FR2881877B1 FR0501129A FR0501129A FR2881877B1 FR 2881877 B1 FR2881877 B1 FR 2881877B1 FR 0501129 A FR0501129 A FR 0501129A FR 0501129 A FR0501129 A FR 0501129A FR 2881877 B1 FR2881877 B1 FR 2881877B1
Authority
FR
France
Prior art keywords
layer channel
field effect
effect transistor
channel field
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0501129A
Other languages
English (en)
Other versions
FR2881877A1 (fr
Inventor
Frederic Allibert
Bruno Ghyselen
Takeshi Akatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR0501129A priority Critical patent/FR2881877B1/fr
Priority to PCT/EP2006/050691 priority patent/WO2006082247A1/fr
Publication of FR2881877A1 publication Critical patent/FR2881877A1/fr
Priority to US11/773,816 priority patent/US7476930B2/en
Application granted granted Critical
Publication of FR2881877B1 publication Critical patent/FR2881877B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
    • H01L29/78687—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys with a multilayer structure or superlattice structure
FR0501129A 2005-02-04 2005-02-04 Transistor a effet de champ multi-grille a canal multi-couche Expired - Fee Related FR2881877B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR0501129A FR2881877B1 (fr) 2005-02-04 2005-02-04 Transistor a effet de champ multi-grille a canal multi-couche
PCT/EP2006/050691 WO2006082247A1 (fr) 2005-02-04 2006-02-06 Tec a grilles multiples pourvu d'un canal a couches multiples
US11/773,816 US7476930B2 (en) 2005-02-04 2007-07-05 Multi-gate FET with multi-layer channel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0501129A FR2881877B1 (fr) 2005-02-04 2005-02-04 Transistor a effet de champ multi-grille a canal multi-couche

Publications (2)

Publication Number Publication Date
FR2881877A1 FR2881877A1 (fr) 2006-08-11
FR2881877B1 true FR2881877B1 (fr) 2007-08-31

Family

ID=35005751

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0501129A Expired - Fee Related FR2881877B1 (fr) 2005-02-04 2005-02-04 Transistor a effet de champ multi-grille a canal multi-couche

Country Status (3)

Country Link
US (1) US7476930B2 (fr)
FR (1) FR2881877B1 (fr)
WO (1) WO2006082247A1 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8481375B2 (en) * 2009-02-05 2013-07-09 Sharp Kabushiki Kaisha Semiconductor device and method for producing the same
US8080820B2 (en) 2009-03-16 2011-12-20 Intel Corporation Apparatus and methods for improving parallel conduction in a quantum well device
CN101719501B (zh) * 2009-12-01 2011-07-20 中国科学院上海微系统与信息技术研究所 混合晶向反型模式全包围栅cmos场效应晶体管
CN101719500B (zh) * 2009-12-01 2011-09-21 中国科学院上海微系统与信息技术研究所 混合材料反型模式全包围栅cmos场效应晶体管
TWI499006B (zh) * 2011-10-07 2015-09-01 Etron Technology Inc 動態記憶體結構
US8766330B2 (en) 2011-10-28 2014-07-01 Georgetown University Method and system for generating a photo-response from MoS2 Schottky junctions
US9570609B2 (en) 2013-11-01 2017-02-14 Samsung Electronics Co., Ltd. Crystalline multiple-nanosheet strained channel FETs and methods of fabricating the same
US9484423B2 (en) 2013-11-01 2016-11-01 Samsung Electronics Co., Ltd. Crystalline multiple-nanosheet III-V channel FETs
US9647098B2 (en) 2014-07-21 2017-05-09 Samsung Electronics Co., Ltd. Thermionically-overdriven tunnel FETs and methods of fabricating the same
US9559168B2 (en) 2014-11-17 2017-01-31 Taiwan Semiconductor Manufacturing Company, Ltd. Field effect transistors and methods of forming same
US9793403B2 (en) 2015-04-14 2017-10-17 Samsung Electronics Co., Ltd. Multi-layer fin field effect transistor devices and methods of forming the same
WO2016209285A1 (fr) * 2015-06-26 2016-12-29 Intel Corporation Ingaas pseudomorphique sur gaas pour transistors à grille enveloppante

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5461250A (en) * 1992-08-10 1995-10-24 International Business Machines Corporation SiGe thin film or SOI MOSFET and method for making the same
US6326667B1 (en) * 1999-09-09 2001-12-04 Kabushiki Kaisha Toshiba Semiconductor devices and methods for producing semiconductor devices
FR2799305B1 (fr) * 1999-10-05 2004-06-18 St Microelectronics Sa Procede de fabrication d'un dispositif semi-conducteur a grille enveloppante et dispositif obtenu
JP3782021B2 (ja) * 2002-02-22 2006-06-07 株式会社東芝 半導体装置、半導体装置の製造方法、半導体基板の製造方法
FR2842350B1 (fr) * 2002-07-09 2005-05-13 Procede de transfert d'une couche de materiau semiconducteur contraint
US6713810B1 (en) * 2003-02-10 2004-03-30 Micron Technology, Inc. Non-volatile devices, and electronic systems comprising non-volatile devices
KR100487566B1 (ko) * 2003-07-23 2005-05-03 삼성전자주식회사 핀 전계 효과 트랜지스터 및 그 형성 방법
FR2858460B1 (fr) * 2003-07-30 2005-10-14 Soitec Silicon On Insulator Structure semiconducteur-sur-isolant contrainte ayant une tenue des contraintes aux hautes temperatures
KR100585111B1 (ko) * 2003-11-24 2006-06-01 삼성전자주식회사 게르마늄 채널 영역을 가지는 비평면 트랜지스터 및 그제조 방법
US7154118B2 (en) * 2004-03-31 2006-12-26 Intel Corporation Bulk non-planar transistor having strained enhanced mobility and methods of fabrication
US7193279B2 (en) * 2005-01-18 2007-03-20 Intel Corporation Non-planar MOS structure with a strained channel region

Also Published As

Publication number Publication date
FR2881877A1 (fr) 2006-08-11
US7476930B2 (en) 2009-01-13
WO2006082247A1 (fr) 2006-08-10
US20070257301A1 (en) 2007-11-08

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Legal Events

Date Code Title Description
CD Change of name or company name

Owner name: SOITEC, FR

Effective date: 20120423

ST Notification of lapse

Effective date: 20131031