FR2858460B1 - Structure semiconducteur-sur-isolant contrainte ayant une tenue des contraintes aux hautes temperatures - Google Patents

Structure semiconducteur-sur-isolant contrainte ayant une tenue des contraintes aux hautes temperatures

Info

Publication number
FR2858460B1
FR2858460B1 FR0309377A FR0309377A FR2858460B1 FR 2858460 B1 FR2858460 B1 FR 2858460B1 FR 0309377 A FR0309377 A FR 0309377A FR 0309377 A FR0309377 A FR 0309377A FR 2858460 B1 FR2858460 B1 FR 2858460B1
Authority
FR
France
Prior art keywords
over
high temperatures
insulating structure
stress resistance
strength semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0309377A
Other languages
English (en)
Other versions
FR2858460A1 (fr
Inventor
Bruno Ghyselen
Cecile Aulnette
Olivier Rayssac
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR0309377A priority Critical patent/FR2858460B1/fr
Priority to US10/700,896 priority patent/US20050023610A1/en
Priority to PCT/FR2004/002018 priority patent/WO2005013317A2/fr
Priority to JP2006521618A priority patent/JP2007500434A/ja
Priority to CNA2004800217427A priority patent/CN1830078A/zh
Priority to EP04767800A priority patent/EP1654757A2/fr
Priority to KR1020067001759A priority patent/KR20060056955A/ko
Publication of FR2858460A1 publication Critical patent/FR2858460A1/fr
Application granted granted Critical
Publication of FR2858460B1 publication Critical patent/FR2858460B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Recrystallisation Techniques (AREA)
  • Element Separation (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
FR0309377A 2003-07-30 2003-07-30 Structure semiconducteur-sur-isolant contrainte ayant une tenue des contraintes aux hautes temperatures Expired - Fee Related FR2858460B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR0309377A FR2858460B1 (fr) 2003-07-30 2003-07-30 Structure semiconducteur-sur-isolant contrainte ayant une tenue des contraintes aux hautes temperatures
US10/700,896 US20050023610A1 (en) 2003-07-30 2003-11-03 Semiconductor-on-insulator structure having high-temperature elastic constraints
JP2006521618A JP2007500434A (ja) 2003-07-30 2004-07-28 高温応力に耐性のある応力付加絶縁体上半導体構造
CNA2004800217427A CN1830078A (zh) 2003-07-30 2004-07-28 抗高温应力的应力绝缘体上半导体结构
PCT/FR2004/002018 WO2005013317A2 (fr) 2003-07-30 2004-07-28 Structure semiconducteur-sur-isolant contrainte ayant une tenue des contraintes aux hautes temperatures
EP04767800A EP1654757A2 (fr) 2003-07-30 2004-07-28 Structure semiconducteur-sur-isolant contrainte ayant une tenue des contraintes aux hautes temperatures
KR1020067001759A KR20060056955A (ko) 2003-07-30 2004-07-28 고온 내응력성 피응력 ＳeＯＩ 구조체

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0309377A FR2858460B1 (fr) 2003-07-30 2003-07-30 Structure semiconducteur-sur-isolant contrainte ayant une tenue des contraintes aux hautes temperatures

Publications (2)

Publication Number Publication Date
FR2858460A1 FR2858460A1 (fr) 2005-02-04
FR2858460B1 true FR2858460B1 (fr) 2005-10-14

Family

ID=34043669

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0309377A Expired - Fee Related FR2858460B1 (fr) 2003-07-30 2003-07-30 Structure semiconducteur-sur-isolant contrainte ayant une tenue des contraintes aux hautes temperatures

Country Status (7)

Country Link
US (1) US20050023610A1 (fr)
EP (1) EP1654757A2 (fr)
JP (1) JP2007500434A (fr)
KR (1) KR20060056955A (fr)
CN (1) CN1830078A (fr)
FR (1) FR2858460B1 (fr)
WO (1) WO2005013317A2 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2881877B1 (fr) * 2005-02-04 2007-08-31 Soitec Silicon On Insulator Transistor a effet de champ multi-grille a canal multi-couche
CN102402125A (zh) * 2010-09-16 2012-04-04 上海华虹Nec电子有限公司 用于制造锗硅碳器件中的光刻标记结构及其制备方法
CN103367392A (zh) * 2012-03-27 2013-10-23 中国科学院微电子研究所 绝缘体上半导体结构及其制造方法
US9105689B1 (en) * 2014-03-24 2015-08-11 Silanna Semiconductor U.S.A., Inc. Bonded semiconductor structure with SiGeC layer as etch stop

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5547787A (en) * 1992-04-22 1996-08-20 Kabushiki Kaisha Toshiba Exposure mask, exposure mask substrate, method for fabricating the same, and method for forming pattern based on exposure mask
US5461243A (en) * 1993-10-29 1995-10-24 International Business Machines Corporation Substrate for tensilely strained semiconductor
US5776743A (en) * 1994-09-06 1998-07-07 La Jolla Cancer Research Foundation Method of sensitizing tumor cells with adenovirus E1A
US5906951A (en) * 1997-04-30 1999-05-25 International Business Machines Corporation Strained Si/SiGe layers on insulator
JP3324469B2 (ja) * 1997-09-26 2002-09-17 信越半導体株式会社 Ｓｏｉウエーハの製造方法ならびにこの方法で製造されるｓｏｉウエーハ
FR2783254B1 (fr) * 1998-09-10 2000-11-10 France Telecom Procede d'obtention d'une couche de germanium monocristallin sur un substrat de silicium monocristallin,et produits obtenus
US6524935B1 (en) * 2000-09-29 2003-02-25 International Business Machines Corporation Preparation of strained Si/SiGe on insulator by hydrogen induced layer transfer technique
US6603156B2 (en) * 2001-03-31 2003-08-05 International Business Machines Corporation Strained silicon on insulator structures
US6940089B2 (en) * 2001-04-04 2005-09-06 Massachusetts Institute Of Technology Semiconductor device structure

Also Published As

Publication number Publication date
JP2007500434A (ja) 2007-01-11
EP1654757A2 (fr) 2006-05-10
CN1830078A (zh) 2006-09-06
WO2005013317A2 (fr) 2005-02-10
WO2005013317A3 (fr) 2005-03-31
FR2858460A1 (fr) 2005-02-04
KR20060056955A (ko) 2006-05-25
US20050023610A1 (en) 2005-02-03

Similar Documents

Publication Publication Date Title
NO20053153L (no) Sag med flere vaiere.
DE602004001278D1 (de) Kochgerät
DE602004007867D1 (de) Kochgerät
DK1622880T3 (da) Substituerede dihydroquinazoliner med antivirale egenskaber
DK1613694T3 (da) Polyalkenaminer med forbedrede anvendelsesegenskaber
DE602004016588D1 (de) Kochplattenoberteil
DE602005024486D1 (de) Anthrapyridonfarbstoffe
DE112004000206D2 (de) Stabilisator-Baugruppe
NO20041380L (no) Gjennomboringsspolehoveddel-hylsesammenstilling
DE602004011712D1 (de) Paraquat Resistenz-Gen
ATE538894T1 (de) Schweisskonstruktion mit hervorragendem widerstand gegen spannungsrisskorrosion
DE602004008811D1 (de) Axiallüfter
DE602005013699D1 (de) Mehrstufiger kryokühler mit konzentrischer zweiter stufe
DE10342164B4 (de) Getriebeanordnung
FR2859943B1 (fr) Structure composite
DE602005014965D1 (de) Unterfenster basierte Fenstergröße und -plazierung, Entscheidungsverfahren für eine Rake-Sucheinheit
FR2858460B1 (fr) Structure semiconducteur-sur-isolant contrainte ayant une tenue des contraintes aux hautes temperatures
FR2862378B1 (fr) Obus explosif ayant une tenue aux chocs amelioree
ITVE20050024A1 (it) Resistenza elettrica corazzata.
FR2871457B1 (fr) Composition pyrotechnique ayant une tenue mecanique amelioree
DK1533568T3 (da) Höjtemperaturovn
DE602005025393D1 (de) Drehschraubermontagestruktur
FR2884160B1 (fr) Amortisseur de percage
DE502004011330D1 (de) Spannvorrichtung
DK1450051T3 (da) Samlebeslag med vridningssikring

Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20080331