JP2008527742A - ストレインド・チャネル領域を伴った非平面mos構造 - Google Patents
ストレインド・チャネル領域を伴った非平面mos構造 Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 96
- 229910052710 silicon Inorganic materials 0.000 claims description 96
- 239000010703 silicon Substances 0.000 claims description 96
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 78
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 78
- 239000000758 substrate Substances 0.000 claims description 29
- 229910052732 germanium Inorganic materials 0.000 claims description 16
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 14
- 238000010304 firing Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910002113 barium titanate Inorganic materials 0.000 claims description 4
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims description 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- -1 lanthanum aluminate Chemical class 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 3
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 claims description 3
- JQJCSZOEVBFDKO-UHFFFAOYSA-N lead zinc Chemical compound [Zn].[Pb] JQJCSZOEVBFDKO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052706 scandium Inorganic materials 0.000 claims description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 2
- BSLXDFGQRZUAAR-UHFFFAOYSA-N [Sc].[Pb] Chemical compound [Sc].[Pb] BSLXDFGQRZUAAR-UHFFFAOYSA-N 0.000 claims 1
- 229910052788 barium Inorganic materials 0.000 claims 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims 1
- 229910052454 barium strontium titanate Inorganic materials 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 claims 1
- QNDQILQPPKQROV-UHFFFAOYSA-N dizinc Chemical compound [Zn]=[Zn] QNDQILQPPKQROV-UHFFFAOYSA-N 0.000 claims 1
- 239000001301 oxygen Substances 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 238000002513 implantation Methods 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 4
- 239000007943 implant Substances 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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Abstract
【選択図】図9
Description
Claims (22)
- 基板上に形成され、前記基板からは電気的に分離されたシリコン・ゲルマニウム・ボディと、
前記シリコン・ゲルマニウム・ボディ上に形成されたストレインド・シリコンと、
前記ストレインド・シリコン上に形成されたゲート誘電体と、
前記ゲート誘電体上に形成されたゲートと、
前記ストレインド・シリコン内に形成されたソースおよびドレインと
を備える非平面トランジスタ。 - 前記シリコン・ゲルマニウム・ボディは略5%から80%の間の密度のゲルマニウムを備える、請求項1に記載の非平面トランジスタ。
- 前記シリコン・ゲルマニウム・ボディは略15%の密度のゲルマニウムを備える、請求項2に記載の非平面トランジスタ。
- 前記ゲート誘電体は、2酸化シリコン、酸化ハフニウム、ケイ酸ハフニウム、酸化ランタン、アルミン酸ランタン、酸化ジルコニウム、ケイ酸ジルコニウム、酸化タンタル、酸化チタン、チタン酸バリウム・ストロンチウム、チタン酸バリウム、チタン酸ストロンチウム、酸化イットリウム、酸化アルミニウム、タンタル酸鉛スカンジウム、および、ニオブ酸鉛亜鉛から構成されるグループから選択された物質を備える、請求項1に記載の非平面トランジスタ。
- 前記ゲートは、ポリシリコン、金属、および、それらの組合せから構成されるグループから選択された物質を備える、請求項1に記載の非平面トランジスタ。
- 前記シリコン・ゲルマニウム・ボディは実質的に矩形の断面を有し、そして、前記ストレインド・シリコンは前記シリコン・ゲルマニウム・ボディの天井および両方の側壁の上に形成される、請求項1に記載の非平面トランジスタ。
- 前記シリコン・ゲルマニウム・ボディは実質的に台形の断面を有し、そして、前記ストレインド・シリコンは前記シリコン・ゲルマニウム・ボディの天井および両方の側壁の上に形成されている、請求項1に記載の非平面トランジスタ。
- 前記ストレインド・シリコンは、略2ナノメートルから10ナノメートルの間の厚みを有する、請求項1に記載の非平面トランジスタ。
- 前記ストレインド・シリコンは、略4ナノメートルから5ナノメートルの間の厚みを有する、請求項8に記載の非平面トランジスタ。
- 天井側の表面および2つの側壁側の表面を有し、インシュレータの上に形成されたシリコン・ゲルマニウム・フィンと、
前記シリコン・ゲルマニウム・フィンの天井側の表面および側壁側の表面の上に形成されたストレインド・シリコン・フィルムと、
前記ストレインド・シリコン・フィルムの上に形成されたゲート誘電体と、
前記ゲート誘電体の上に形成され、前記シリコン・ゲルマニウム・フィンの前記天井側の表面を覆って広がるゲートと、
前記ストレインド・シリコン・フィルムに形成されたソースおよびドレインと
を備える3ゲート・トランジスタ。 - 前記シリコン・ゲルマニウム・フィンは略5%から80%の密度のゲルマニウムを備える、請求項10に記載の3ゲート・トランジスタ。
- 前記シリコン・ゲルマニウム・フィンは略15%の密度のゲルマニウムを備える、請求項11に記載の3ゲート・トランジスタ。
- 前記ストレインド・シリコン・フィルムは、略2ナノメートルから10ナノメートルの間の厚みを有する、請求項10に記載の3ゲート・トランジスタ。
- 前記ストレインド・シリコン・フィルムは、略4ナノメートルから5ナノメートルの間の厚みを有する、請求項13に記載の3ゲート・トランジスタ。
- シリコン・オン・インシュレータ上にシリコン・ゲルマニウムを形成することと、
前記シリコン・ゲルマニウムを緩和させるために前記シリコン・ゲルマニウムを焼成することと、
前記緩和されたシリコン・ゲルマニウムの中に、天井側の表面および2つの側壁側の表面を有するフィンを形成することと、
前記フィンの前記天井側の表面および2つの側壁側の表面の上にストレインド・シリコンを形成することと
を備える方法。 - 前記シリコン・ゲルマニウムを焼成することは、前記シリコン・オン・インシュレータの基板における前記シリコンの中でゲルマニウムを拡散させること、を更に備える、請求項15に記載の方法。
- 2酸化シリコン、酸化ハフニウム、ケイ酸ハフニウム、酸化ランタン、アルミン酸ランタン、酸化ジルコニウム、ケイ酸ジルコニウム、酸化タンタル、酸化チタン、チタン酸バリウム・ストロンチウム、チタン酸バリウム、チタン酸ストロンチウム、酸化イットリウム、酸化アルミニウム、タンタル酸鉛スカンジウム、および、ニオブ酸鉛亜鉛から構成されるグループから選択されたゲート誘電体物質のゲート誘電体を、前記ストレインド・シリコン・フィルム上に形成すること、を更に備える請求項16に記載の方法。
- ポリシリコン、金属、および、それらの組合せから構成されるグループから選択されたゲート物質のゲートを前記ゲート誘電体上に形成すること、を更に備える、請求項17に記載の方法。
- ソースおよびドレインを形成するために、前記ストレインド・シリコンをドープすること、を更に備える請求項18に記載の方法。
- ストレインド・シリコン・チャネル領域を有する3ゲート・トランジスタを備える装置。
- 前記ストレインド・シリコン・チャネル領域は、略2ナノメートルから10ナノメートルの間の厚みを有する、請求項20に記載の装置。
- 前記ストレインド・シリコン・チャネル領域は、略4ナノメートルから5ナノメートルの間の厚みを有する、請求項21に記載の装置。
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US11/039,197 US7193279B2 (en) | 2005-01-18 | 2005-01-18 | Non-planar MOS structure with a strained channel region |
US11/039,197 | 2005-01-18 | ||
PCT/US2006/000378 WO2006078469A1 (en) | 2005-01-18 | 2006-01-04 | Non-planar mos structure with a strained channel region |
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CN (1) | CN101142688B (ja) |
DE (1) | DE112006000229B4 (ja) |
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US7193279B2 (en) | 2007-03-20 |
TW200711157A (en) | 2007-03-16 |
US20060157687A1 (en) | 2006-07-20 |
TWI309091B (en) | 2009-04-21 |
GB2437867A (en) | 2007-11-07 |
JP5408880B2 (ja) | 2014-02-05 |
GB2437867B (en) | 2008-07-09 |
GB0714637D0 (en) | 2007-09-05 |
WO2006078469A1 (en) | 2006-07-27 |
CN101142688B (zh) | 2012-05-23 |
DE112006000229T5 (de) | 2007-11-08 |
KR20070089743A (ko) | 2007-08-31 |
DE112006000229B4 (de) | 2016-04-14 |
US7531393B2 (en) | 2009-05-12 |
CN101142688A (zh) | 2008-03-12 |
US20060157794A1 (en) | 2006-07-20 |
KR100903902B1 (ko) | 2009-06-19 |
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