FR2885733B1 - Structure de transistor a trois grilles - Google Patents

Structure de transistor a trois grilles

Info

Publication number
FR2885733B1
FR2885733B1 FR0504891A FR0504891A FR2885733B1 FR 2885733 B1 FR2885733 B1 FR 2885733B1 FR 0504891 A FR0504891 A FR 0504891A FR 0504891 A FR0504891 A FR 0504891A FR 2885733 B1 FR2885733 B1 FR 2885733B1
Authority
FR
France
Prior art keywords
transistor structure
grid transistor
grid
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0504891A
Other languages
English (en)
Other versions
FR2885733A1 (fr
Inventor
Philippe Coronel
Romain Wacquez
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
Original Assignee
STMicroelectronics Crolles 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR0504891A priority Critical patent/FR2885733B1/fr
Priority to US11/434,561 priority patent/US7420253B2/en
Publication of FR2885733A1 publication Critical patent/FR2885733A1/fr
Application granted granted Critical
Publication of FR2885733B1 publication Critical patent/FR2885733B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1037—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure and non-planar channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66484—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with multiple gate, at least one gate being an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
FR0504891A 2005-05-16 2005-05-16 Structure de transistor a trois grilles Expired - Fee Related FR2885733B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0504891A FR2885733B1 (fr) 2005-05-16 2005-05-16 Structure de transistor a trois grilles
US11/434,561 US7420253B2 (en) 2005-05-16 2006-05-15 Three-gate transistor structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0504891A FR2885733B1 (fr) 2005-05-16 2005-05-16 Structure de transistor a trois grilles

Publications (2)

Publication Number Publication Date
FR2885733A1 FR2885733A1 (fr) 2006-11-17
FR2885733B1 true FR2885733B1 (fr) 2008-03-07

Family

ID=35608271

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0504891A Expired - Fee Related FR2885733B1 (fr) 2005-05-16 2005-05-16 Structure de transistor a trois grilles

Country Status (2)

Country Link
US (1) US7420253B2 (fr)
FR (1) FR2885733B1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7700473B2 (en) * 2007-04-09 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Gated semiconductor device and method of fabricating same
US8445953B2 (en) 2009-07-08 2013-05-21 Taiwan Semiconductor Manufacturing Company, Ltd. Structure for flash memory cells
CN102918749B (zh) * 2010-05-26 2016-03-30 丰田自动车株式会社 定子构造以及定子制造方法
US10574208B2 (en) * 2017-06-20 2020-02-25 Skyworks Solutions, Inc. Acoustic wave filters with thermally conductive sheet

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5180680A (en) * 1991-05-17 1993-01-19 United Microelectronics Corporation Method of fabricating electrically erasable read only memory cell
JP2734962B2 (ja) * 1993-12-27 1998-04-02 日本電気株式会社 薄膜トランジスタ及びその製造方法
US5705415A (en) * 1994-10-04 1998-01-06 Motorola, Inc. Process for forming an electrically programmable read-only memory cell
JPH08204191A (ja) * 1995-01-20 1996-08-09 Sony Corp 電界効果トランジスタ及びその製造方法
US6562665B1 (en) * 2000-10-16 2003-05-13 Advanced Micro Devices, Inc. Fabrication of a field effect transistor with a recess in a semiconductor pillar in SOI technology
US6413802B1 (en) * 2000-10-23 2002-07-02 The Regents Of The University Of California Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture
DE10131276B4 (de) * 2001-06-28 2007-08-02 Infineon Technologies Ag Feldeffekttransistor und Verfahren zu seiner Herstellung
US7259425B2 (en) * 2003-01-23 2007-08-21 Advanced Micro Devices, Inc. Tri-gate and gate around MOSFET devices and methods for making same
US6844238B2 (en) * 2003-03-26 2005-01-18 Taiwan Semiconductor Manufacturing Co., Ltd Multiple-gate transistors with improved gate control
US7173305B2 (en) * 2003-04-08 2007-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. Self-aligned contact for silicon-on-insulator devices
US7154118B2 (en) * 2004-03-31 2006-12-26 Intel Corporation Bulk non-planar transistor having strained enhanced mobility and methods of fabrication
KR100541657B1 (ko) * 2004-06-29 2006-01-11 삼성전자주식회사 멀티 게이트 트랜지스터의 제조방법 및 이에 의해 제조된멀티 게이트 트랜지스터
US7193279B2 (en) * 2005-01-18 2007-03-20 Intel Corporation Non-planar MOS structure with a strained channel region

Also Published As

Publication number Publication date
US20070018227A1 (en) 2007-01-25
US7420253B2 (en) 2008-09-02
FR2885733A1 (fr) 2006-11-17

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20140131