KR100861153B1 - 반도체장치 - Google Patents
반도체장치 Download PDFInfo
- Publication number
- KR100861153B1 KR100861153B1 KR1020080046229A KR20080046229A KR100861153B1 KR 100861153 B1 KR100861153 B1 KR 100861153B1 KR 1020080046229 A KR1020080046229 A KR 1020080046229A KR 20080046229 A KR20080046229 A KR 20080046229A KR 100861153 B1 KR100861153 B1 KR 100861153B1
- Authority
- KR
- South Korea
- Prior art keywords
- pad
- bump electrode
- film
- bump
- wiring
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 137
- 238000000034 method Methods 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims description 73
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 abstract description 10
- 238000009413 insulation Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 35
- 239000011521 glass Substances 0.000 description 32
- 238000004519 manufacturing process Methods 0.000 description 17
- 239000004020 conductor Substances 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
Images
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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Abstract
Description
Claims (10)
- 직사각형 형상으로 형성된 반도체기판과,상기 반도체기판 상에 형성된 반도체 소자와,상기 반도체기판 상에 형성되고, 상기 반도체 소자를 덮도록 형성된 제1 절연막과,상기 제1 절연막 상에 형성된 패드전극과,상기 제1 절연막 상에 형성되고, 상기 패드 전극과 동층에서 형성된 배선층과,상기 패드전극과 상기 배선층을 덮도록 형성되고, 상기 패드전극의 상부에 개구부를 가지는 제2 절연막과,상기 제2 절연막 상에 형성되고, 상기 개구부를 통하여 상기 패드전극에 전기적으로 접속된 직사각형 형상의 범프전극을 가지며,상기 패드전극의 크기는, 상기 범프전극의 크기에 비해서 작게 형성되고,상기 범프전극은, 상기 반도체기판의 장변(長邊)을 따르는 제1 방향에 소정의 간격으로 복수 배치되며,상기 범프전극의 각각은, 상기 범프전극의 장변이, 상기 반도체기판의 단변(短邊)을 따르는 제2 방향을 따르도록 배치되고,상기 배선층은, 상기 복수 배치된 범프전극의 바로 밑에 배치되며, 상기 제1 방향에 따라서 형성되어 있는 것을 특징으로 하는 반도체장치.
- 제 1항에 있어서,상기 배선층은, 전원배선인 것을 특징으로 하는 반도체장치.
- 제 1항에 있어서,상기 배선층은, 상기 범프전극과 평면적으로 겹쳐지도록 형성되고, 또한 상기 범프전극의 상기 장변과 교차하도록 연장되는 것을 특징으로 하는 반도체장치.
- 제 1항에 있어서,상기 제2 절연막과 상기 범프전극의 사이에, 상기 범프전극의 하지(下地)가 되는 금속막이 형성되고,상기 범프전극은, 상기 금속막을 통하여 상기 패드전극에 전기적으로 접속되어 있는 것을 특징으로 하는 반도체장치.
- 제 4항에 있어서,상기 제2 절연막은, 질화실리콘막인 것을 특징으로 하는 반도체장치.
- 제 5항에 있어서,상기 제1 절연막은, 산화실리콘막인 것을 특징으로 하는 반도체장치.
- 제 4항에 있어서,상기 범프전극은, 금막(金膜)으로 형성되어 있는 것을 특징으로 하는 반도체장치.
- 제 3항에 있어서,상기 패드전극과 상기 배선층은, 동일 공정에서 형성된 알루미늄막을 포함하는 것을 특징으로 하는 반도체장치.
- 제 8항에 있어서,상기 패드전극과 상기 배선층은, 상기 알루미늄막과 상기 알루미늄막의 상하(上下)에 적층 형성된 티탄막 및 질화티탄막을 포함하는 것을 특징으로 하는 반도체장치.
- 제 1항에 있어서,상기 범프전극은, 이방도전막(異方導電膜)을 통하여 실장기판에 형성된 배선과 전기적으로 접속하기 위한 단자인 것을 특징으로 하는 반도체장치.
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TW200847114A (en) * | 2007-05-30 | 2008-12-01 | Au Optronics Corp | A circuit signal connection interface, a manufacture method thereof, and an electronic device using the same |
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JP4585564B2 (ja) * | 2007-12-13 | 2010-11-24 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
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JP5448788B2 (ja) * | 2009-12-22 | 2014-03-19 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
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