JP2007103848A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
- Publication number
- JP2007103848A JP2007103848A JP2005294902A JP2005294902A JP2007103848A JP 2007103848 A JP2007103848 A JP 2007103848A JP 2005294902 A JP2005294902 A JP 2005294902A JP 2005294902 A JP2005294902 A JP 2005294902A JP 2007103848 A JP2007103848 A JP 2007103848A
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- Prior art keywords
- pad
- bump electrode
- wiring
- semiconductor device
- insulating film
- Prior art date
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Abstract
【解決手段】 まず、絶縁膜9上にパッド10およびパッド以外の配線11a、11bを設ける。このパッド10および配線11a、11b上を含む絶縁膜9上に表面保護膜12を形成し、表面保護膜12に開口部13を設ける。開口部13はパッド10上に形成されており、パッド10の表面を露出する。この開口部13を含む表面保護膜12上にバンプ電極8を形成する。ここで、バンプ電極8の大きさに比べてパッド10の大きさを充分小さくなるように構成する。これにより、バンプ電極8の直下であって、パッド10と同層に配線11a、11bが配置されるようにする。すなわち、パッド10を小さくすることにより形成されたバンプ電極8下のスペースに配線11a、11bを配置する。
【選択図】 図2
Description
図1は本実施の形態1における半導体チップ1(半導体装置)の構成を示した平面図である。本実施の形態1における半導体チップ1は、LCD用のドライバである。図1において、半導体チップ1は、例えば細長い長方形状に形成された半導体基板2を有しており、その主面には、例えば液晶表示装置を駆動するLCD用のドライバが形成されている。このドライバは、LCDを構成するセルアレイの各画素に電圧を供給して液晶分子の向きを制御する機能を有しており、ゲート駆動回路3、ソース駆動回路4、液晶駆動回路5、グラフィックRAM(Random Access Memory)6および周辺回路7を有している。
本実施の形態2では、バンプ電極の位置によらずにパッドの形成位置を最適な位置に決定することができるレイアウト自由度の高い半導体装置について説明する。
2 半導体基板
3 ゲート駆動回路
4 ソース駆動回路
5 液晶駆動回路
6 グラフィックRAM
7 周辺回路
8 バンプ電極
8a パッド接続部
8b 配線部
8c 端子接続部
9 絶縁膜
10 パッド
11a〜11k 配線
12 表面保護膜
13 開口部
14 UBM膜
15 レジスト膜
16 導体膜
17a ガラス基板
17b ガラス基板
18 フレキシブルプリント基板
19 異方導電フィルム
20 表示部
20a 端子
21 TCP形態
22 COF形態
23 フィルム基板
24 リード
25 レジン
26 異方導電フィルム
27 異方導電フィルム
28 プリント基板
29 フィルム基板
30 リード
31 アンダーフィル
Claims (22)
- (a)半導体基板上に形成されたパッドと、
(b)前記パッド上に開口部を有する絶縁膜と、
(c)前記開口部を含む前記絶縁膜上に形成されたバンプ電極とを有する半導体チップを備え、
前記パッドの大きさは、前記バンプ電極の大きさに比べて小さくなっており、
前記絶縁膜を介した前記バンプ電極の下層には、前記パッドとは異なる配線が形成されていることを特徴とする半導体装置。 - 前記パッドとは異なる配線には、ダミー配線も含まれていることを特徴とする請求項1記載の半導体装置。
- 前記パッドとは異なる配線には、信号配線あるいは電源配線も含まれていることを特徴とする請求項1記載の半導体装置。
- 前記パッドとは異なる配線は、前記パッドと同層に形成されていることを特徴とする請求項1記載の半導体装置。
- 前記パッドとは異なる配線は、複数存在することを特徴とする請求項1記載の半導体装置。
- 前記バンプ電極は、所定方向に延在していることを特徴とする請求項1記載の半導体装置。
- 前記バンプ電極は、千鳥状に配置されていることを特徴とする請求項1記載の半導体装置。
- 前記パッドの幅は、前記パッドとは異なる配線に含まれる所定の配線の幅よりも狭いことを特徴とする請求項5記載の半導体装置。
- (a)半導体基板上に形成されたパッドと、
(b)前記パッド上に開口部を有する絶縁膜と、
(c)前記開口部を含む前記絶縁膜上に形成されたバンプ電極とを有する半導体チップを備え、
前記パッドの大きさは、前記バンプ電極の大きさに比べて小さくなっており、
前記バンプ電極には、幅の狭い第1部分と前記第1部分より幅の広い第2部分があることを特徴とする半導体装置。 - 前記バンプ電極は、
(c1)前記パッドと接続するパッド接続部と、
(c2)前記半導体チップを実装基板に実装する際に実装基板の端子に接続する端子接続部と、
(c3)前記パッド接続部と前記端子接続部を接続する配線部とを有することを特徴とする請求項9記載の半導体装置。 - 前記第1部分は前記配線部であり、前記第2部分は前記端子接続部であることを特徴とする請求項10記載の半導体装置。
- 前記パッド接続部と前記端子接続部とは、平面的に重ならない領域に形成されていることを特徴とする請求項10記載の半導体装置。
- 前記絶縁膜を介した前記バンプ電極の下層には、前記パッドとは異なる配線が形成されていることを特徴とする請求項9記載の半導体装置。
- 前記パッドとは異なる配線は、前記パッドと同層で形成されていることを特徴とする請求項13記載の半導体装置。
- 前記半導体チップは、液晶ディスプレイ用のドライバであることを特徴とする請求項1記載の半導体装置。
- (a)半導体基板上にパッドおよび前記パッドとは異なる配線を同層で形成する工程と、
(b)前記パッドおよび前記パッドとは異なる配線上に絶縁膜を形成する工程と、
(c)前記絶縁膜に前記パッドの表面を露出する開口部を形成する工程と、
(d)前記開口部を含む前記絶縁膜上にバンプ電極を形成する工程とを備え、
前記絶縁膜を介した前記バンプ電極の下層に、前記パッドおよび前記パッドとは異なる配線を形成することを特徴とする半導体装置の製造方法。 - (a)半導体基板上にパッドを形成する工程と、
(b)前記パッド上に絶縁膜を形成する工程と、
(c)前記絶縁膜上に前記パッドの表面を露出する開口部を形成する工程と、
(d)前記開口部を含む前記絶縁膜上にバンプ電極を形成する工程とを備え、
前記バンプ電極に、幅の狭い第1部分と前記第1部分よりも幅の広い第2部分を形成することを特徴とする半導体装置の製造方法。 - 前記バンプ電極を、前記パッドと接続するパッド接続部と、実装基板の端子と接続する端子接続部と、前記パッド接続部と前記端子接続部を接続する配線部とを有するように形成し、前記第1部分を前記配線部、前記第2部分を前記端子接続部とすることを特徴とする請求項17記載の半導体装置の製造方法。
- 前記パッド接続部と前記端子接続部を平面的に重ならないように形成することを特徴とする請求項18記載の半導体装置の製造方法。
- さらに、
(e)前記半導体基板を個片化して半導体チップを取得する工程と、
(f)前記半導体チップを前記バンプ電極で実装基板に実装する工程とを備えることを特徴とする請求項16記載の半導体装置の製造方法。 - 前記実装基板は、ガラス基板であることを特徴とする請求項20記載の半導体装置の製造方法。
- 前記実装基板は、テープ基板であることを特徴とする請求項20記載の半導体装置の製造方法。
Priority Applications (22)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005294902A JP4708148B2 (ja) | 2005-10-07 | 2005-10-07 | 半導体装置 |
CN2009101597451A CN101593742B (zh) | 2005-10-07 | 2006-09-29 | 半导体器件及其制造方法 |
CNA2008101685975A CN101388351A (zh) | 2005-10-07 | 2006-09-29 | 半导体器件及其制造方法 |
CNB2006101418119A CN100536119C (zh) | 2005-10-07 | 2006-09-29 | 半导体器件及其制造方法 |
KR1020060097621A KR100933201B1 (ko) | 2005-10-07 | 2006-10-04 | 반도체장치 및 그 제조방법 |
TW104102471A TWI538028B (zh) | 2005-10-07 | 2006-10-05 | Semiconductor device |
TW105109509A TWI578388B (zh) | 2005-10-07 | 2006-10-05 | Semiconductor device |
TW101142762A TWI475604B (zh) | 2005-10-07 | 2006-10-05 | Semiconductor device |
TW095137258A TWI382461B (zh) | 2005-10-07 | 2006-10-05 | Semiconductor device and manufacturing method thereof |
US11/543,859 US20070080416A1 (en) | 2005-10-07 | 2006-10-06 | Semiconductor device and a method of manufacturing the same |
US11/953,068 US7728442B2 (en) | 2005-10-07 | 2007-12-09 | Semiconductor device and a method of manufacturing the same |
US11/953,055 US7538430B2 (en) | 2005-10-07 | 2007-12-09 | Semiconductor device and a method of manufacturing the same |
KR1020080046229A KR100861153B1 (ko) | 2005-10-07 | 2008-05-19 | 반도체장치 |
US12/766,567 US8183142B2 (en) | 2005-10-07 | 2010-04-23 | Semiconductor device and a method of manufacturing the same |
US13/396,456 US8338968B2 (en) | 2005-10-07 | 2012-02-14 | Semiconductor device and a method of manufacturing the same |
US13/682,672 US8624403B2 (en) | 2005-10-07 | 2012-11-20 | Semiconductor device and a method of manufacturing the same |
US14/109,827 US9159650B2 (en) | 2005-10-07 | 2013-12-17 | Semiconductor device and a method of manufacturing the same |
US14/836,342 US9576924B2 (en) | 2005-10-07 | 2015-08-26 | Semiconductor device and a method of manufacturing the same |
US15/366,794 US9929185B2 (en) | 2005-10-07 | 2016-12-01 | Semiconductor device and a method of manufacturing the same |
US15/898,975 US10304867B2 (en) | 2005-10-07 | 2018-02-19 | Semiconductor device and a method of manufacturing the same |
US16/385,129 US20190244978A1 (en) | 2005-10-07 | 2019-04-16 | Semiconductor device and a method of manufacturing the same |
US16/842,315 US10957719B2 (en) | 2005-10-07 | 2020-04-07 | Semiconductor device and a method of manufacturing the same |
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