JP2009117761A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP2009117761A JP2009117761A JP2007292079A JP2007292079A JP2009117761A JP 2009117761 A JP2009117761 A JP 2009117761A JP 2007292079 A JP2007292079 A JP 2007292079A JP 2007292079 A JP2007292079 A JP 2007292079A JP 2009117761 A JP2009117761 A JP 2009117761A
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- wiring
- film
- bump electrode
- dummy pattern
- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 253
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 239000000758 substrate Substances 0.000 claims abstract description 96
- 238000000034 method Methods 0.000 claims abstract description 70
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 124
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 122
- 230000001681 protective effect Effects 0.000 claims description 104
- 239000004020 conductor Substances 0.000 claims description 36
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 23
- 230000015572 biosynthetic process Effects 0.000 claims description 23
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 23
- 238000005498 polishing Methods 0.000 claims description 18
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 13
- 239000004973 liquid crystal related substance Substances 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 10
- 238000000059 patterning Methods 0.000 claims description 8
- 230000007261 regionalization Effects 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 5
- 239000011521 glass Substances 0.000 abstract description 39
- 230000008878 coupling Effects 0.000 abstract 2
- 238000010168 coupling process Methods 0.000 abstract 2
- 238000005859 coupling reaction Methods 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 249
- 238000005530 etching Methods 0.000 description 89
- 239000012535 impurity Substances 0.000 description 65
- 238000009792 diffusion process Methods 0.000 description 49
- 229910052782 aluminium Inorganic materials 0.000 description 26
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 26
- 239000011229 interlayer Substances 0.000 description 24
- 229910017052 cobalt Inorganic materials 0.000 description 23
- 239000010941 cobalt Substances 0.000 description 23
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 23
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 21
- 239000010936 titanium Substances 0.000 description 21
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 20
- 229910052719 titanium Inorganic materials 0.000 description 20
- 239000007795 chemical reaction product Substances 0.000 description 17
- 230000002093 peripheral effect Effects 0.000 description 17
- 229910021332 silicide Inorganic materials 0.000 description 17
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 17
- 238000002955 isolation Methods 0.000 description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 14
- 229920005591 polysilicon Polymers 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 238000010586 diagram Methods 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 11
- 229910052737 gold Inorganic materials 0.000 description 11
- 239000010931 gold Substances 0.000 description 11
- 239000002923 metal particle Substances 0.000 description 9
- 238000000206 photolithography Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 230000006870 function Effects 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 229910052735 hafnium Inorganic materials 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- 239000010937 tungsten Substances 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000007480 spreading Effects 0.000 description 5
- 238000003892 spreading Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical class ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 229910003855 HfAlO Inorganic materials 0.000 description 1
- 229910004143 HfON Inorganic materials 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- CEPICIBPGDWCRU-UHFFFAOYSA-N [Si].[Hf] Chemical compound [Si].[Hf] CEPICIBPGDWCRU-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- -1 hafnium aluminate Chemical class 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000008450 motivation Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- RJCRUVXAWQRZKQ-UHFFFAOYSA-N oxosilicon;silicon Chemical compound [Si].[Si]=O RJCRUVXAWQRZKQ-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13458—Terminal pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
- H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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Abstract
【解決手段】バンプ電極BP1の非重複領域Y直下にある最上層配線層に電源配線や信号配線からなる配線L1と、ダミーパターンDPを形成する。ダミーパターンDPは、配線L1間のスペースを埋めるように配置され、配線L1とスペースによって最上層配線層に生じる凹凸を緩和する。さらに、最上層配線層を覆うように形成される表面保護膜に対してCMP法による平坦化処理を実施する。
【選択図】図5
Description
2 素子分離領域
3a p型ウェル
3b n型ウェル
4 ゲート絶縁膜
5 ポリシリコン膜
6a ゲート電極
6b ゲート電極
7 低濃度n型不純物拡散領域
8 低濃度p型不純物拡散領域
9 サイドウォール
10 高濃度n型不純物拡散領域
11 高濃度p型不純物拡散領域
12 コバルトシリサイド膜
13 層間絶縁膜
14 コンタクトホール
15a チタン/窒化チタン膜
15b タングステン膜
16 プラグ
17a チタン/窒化チタン膜
17b アルミニウム膜
17c チタン/窒化チタン膜
18 配線
19 層間絶縁膜
20 酸化シリコン膜
21 酸化シリコン膜
22 導体膜
22a 酸化シリコン膜
23 酸化シリコン膜
24 窒化シリコン膜
25 開口部
26 UBM膜
27 レジスト膜
28 金膜
30 ガラス基板
30a 端子
31 ガラス基板
32 フレキシブル基板
33 金属粒子
34 表示部
35 液晶表示装置
100 層間絶縁膜
101 表面保護膜
102 導電粒子
103 ガラス基板
103a 配線
ACF 異方性導電フィルム
BP バンプ電極
BP1 バンプ電極
BP2 バンプ電極
CHP 半導体チップ
DP ダミーパターン
DR ダミーパターン形成領域
L1 配線
L2 配線
NDR ダミーパターン非形成領域
PD パッド
R 領域
RF レジスト膜
S1 凹凸幅
S2 凹凸幅
SIL プラグ
X 重複領域
Y 非重複領域
Claims (18)
- (a)半導体基板と、
(b)前記半導体基板上に形成された半導体素子と、
(c)前記半導体素子上に形成された多層配線層と、
(d)前記多層配線層の最上層に形成されたパッドと、
(e)前記パッド上に形成され、前記パッドに達する開口部を有する表面保護膜と、
(f)前記表面保護膜上に形成され、前記開口部を埋め込むことにより前記パッドと電気的に接続するバンプ電極とを備え、
前記バンプ電極は、前記パッドと平面的に重なる重複領域と、前記パッドと平面的に重ならない非重複領域を有するように、前記パッドより大きく形成されており、
前記多層配線層の最上層には、
(g)前記パッドの他に電源配線あるいは信号配線よりなる第1配線と、
(h)前記第1配線とは異なるダミーパターンが形成され、
前記バンプ電極の前記非重複領域の下層には、前記パッドと同層で形成された前記第1配線が形成されていることを特徴とする半導体装置。 - 請求項1記載の半導体装置であって、
前記バンプ電極の前記非重複領域の下層には、前記パッドと同層で形成された前記第1配線が形成され、前記非重複領域の下層に形成されている前記第1配線に隣接する所定範囲に前記ダミーパターンが形成されていることを特徴とする半導体装置。 - 請求項1記載の半導体装置であって、
前記バンプ電極の非重複領域の下層には、前記パッドと同層で形成された前記第1配線と、前記パッドと同層で形成された前記ダミーパターンが形成されていることを特徴とする半導体装置。 - 請求項2または請求項3記載の半導体装置であって、
前記ダミーパターンは、矩形形状をした複数のパターンから形成されていることを特徴とする半導体装置。 - 請求項4記載の半導体装置であって、
前記矩形形状をした複数のパターンのそれぞれは、短辺と長辺とを有する長方形状パターンから形成されており、前記長方形状パターンの短辺幅は、前記第1配線の幅よりも小さいことを特徴とする半導体装置。 - 請求項1記載の半導体装置であって、
前記表面保護膜は、平坦化処理が施されていることを特徴とする半導体装置。 - 請求項6記載の半導体装置であって、
前記表面保護膜は、プラズマCVD法により形成された第1酸化シリコン膜と、前記第1酸化シリコン膜上に形成されたTEOSを材料とする第2酸化シリコン膜と、前記第2酸化シリコン膜上に形成された窒化シリコン膜から形成されていることを特徴とする半導体装置。 - 請求項7記載の半導体装置であって、
前記第2酸化シリコン膜に対して平坦化処理が施されていることを特徴とする半導体装置。 - 請求項1記載の半導体装置であって、
前記半導体装置は、液晶ディスプレイ用のLCDドライバであることを特徴とする半導体装置。 - 平面形状が長辺と短辺とを有する長方形状をした半導体チップを含む半導体装置において、
前記半導体チップは、
(a)半導体基板と、
(b)前記半導体基板上に形成された半導体素子と、
(c)前記半導体素子上に形成された多層配線層と、
(d)前記多層配線層の最上層に形成された複数のパッドと、
(e)前記複数のパッド上に形成され、前記複数のパッドのそれぞれに達する開口部を有する表面保護膜と、
(f)前記表面保護膜上に形成され、前記開口部を埋め込むことにより前記複数のパッドのそれぞれと電気的に接続する長方形状をした複数のバンプ電極のそれぞれとを備え、
前記多層配線層の最上層には、
(g)前記パッドの他に電源配線あるいは信号配線よりなる第1配線と、
(h)前記第1配線とは異なるダミーパターンが形成されている半導体装置であって、
前記複数のバンプ電極は、前記複数のバンプ電極のそれぞれの長辺を前記半導体チップの短辺方向に向けた状態で、少なくとも前記半導体チップの長辺方向に並んで配置され、
前記複数のバンプ電極のそれぞれは、前記複数のパッドのそれぞれと平面的に重なる重複領域と、前記複数のパッドのそれぞれと平面的に重ならない非重複領域を有するように、前記複数のパッドのそれぞれより大きく形成されており、
前記複数のバンプ電極のそれぞれにおける前記非重複領域の下層には、前記複数のパッドと同層で形成された前記第1配線が前記半導体チップの長辺方向に延在するように形成され、前記非重複領域の下層に形成されている前記第1配線に隣接する所定範囲に前記ダミーパターンが形成されていることを特徴とする半導体装置。 - 請求項10記載の半導体装置であって、
前記ダミーパターンは、前記複数のバンプ電極のそれぞれにおける前記非重複領域の下層にも形成されていることを特徴とする半導体装置。 - 請求項10記載の半導体装置であって、
前記ダミーパターンは、前記複数のバンプ電極のそれぞれから一定距離内にある前記多層配線層の最上層に形成されており、前記多層配線層の最上層には、前記ダミーパターンが形成されているダミーパターン形成領域と、前記ダミーパターンが形成されていないダミーパターン非形成領域があることを特徴とする半導体装置。 - (a)半導体基板上に半導体素子を形成する工程と、
(b)前記半導体素子上に多層配線層を形成する工程と、
(c)前記多層配線層の最上層に導体膜を形成する工程と、
(d)前記導体膜をパターニングすることにより、パッドと、電源配線あるいは信号配線よりなる第1配線およびダミーパターンを形成する工程と、
(e)前記パッド、前記第1配線および前記ダミーパターンを覆うように表面保護膜を形成する工程と、
(f)前記表面保護膜に前記パッドに達する開口部を形成する工程と、
(g)前記開口部を含む前記表面保護膜上に前記パッドよりも大きなバンプ電極を形成する工程を備え、
前記(g)工程は、前記バンプ電極を、前記パッドと平面的に重なる重複領域と、前記パッドと平面的に重ならない非重複領域とを有するように形成し、
前記(g)工程で形成した前記バンプ電極の前記非重複領域の下層に、前記パッドと同層で形成された前記第1配線を形成し、前記非重複領域の下層に形成されている前記第1配線に隣接する所定範囲に前記ダミーパターンを形成することを特徴とする半導体装置の製造方法。 - 請求項13記載の半導体装置の製造方法であって、
前記ダミーパターンを、前記バンプ電極における前記非重複領域の下層にも形成することを特徴とする半導体装置の製造方法。 - 請求項13記載の半導体装置の製造方法であって、
前記ダミーパターンを、前記バンプ電極から一定距離内にある前記多層配線層の最上層に形成し、前記多層配線層の最上層には、前記ダミーパターンが形成されているダミーパターン形成領域と、前記ダミーパターンが形成されていないダミーパターン非形成領域があることを特徴とする半導体装置の製造方法。 - 請求項13記載の半導体装置の製造方法であって、
前記(e)工程と前記(f)工程の間に、
(h)前記表面保護膜の表面を平坦化する工程を備えることを特徴とする半導体装置の製造方法。 - 請求項16記載の半導体装置の製造方法であって、
前記(h)工程は、化学的機械的研磨法により前記表面保護膜の表面を平坦化することを特徴とする半導体装置の製造方法。 - 請求項13記載の半導体装置の製造方法であって、
前記(e)工程は、
(e1)プラズマCVD法を使用することにより、前記パッド、前記第1配線および前記ダミーパターンを覆うように、第1酸化シリコン膜を形成する工程と、
(e2)前記第1酸化シリコン膜上に、TEOSを材料とする第2酸化シリコン膜を形成する工程と、
(e3)前記第2酸化シリコン膜の表面を、化学的機械的研磨法で平坦化する工程と、
(e4)前記(e3)工程後、前記第2酸化シリコン膜上に窒化シリコン膜を形成する工程とを有することを特徴とする半導体装置の製造方法。
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US10204878B2 (en) | 2019-02-12 |
US20140312493A1 (en) | 2014-10-23 |
CN101431058A (zh) | 2009-05-13 |
US9748191B2 (en) | 2017-08-29 |
US8552555B2 (en) | 2013-10-08 |
US20160126264A1 (en) | 2016-05-05 |
US8552552B2 (en) | 2013-10-08 |
US20160126203A1 (en) | 2016-05-05 |
TWI552239B (zh) | 2016-10-01 |
US20160086911A1 (en) | 2016-03-24 |
US10741517B2 (en) | 2020-08-11 |
US9484286B2 (en) | 2016-11-01 |
TW201445655A (zh) | 2014-12-01 |
US11239191B2 (en) | 2022-02-01 |
US9508630B2 (en) | 2016-11-29 |
US20200335467A1 (en) | 2020-10-22 |
US20130020701A1 (en) | 2013-01-24 |
CN101431058B (zh) | 2012-12-26 |
US20190172808A1 (en) | 2019-06-06 |
US9484287B2 (en) | 2016-11-01 |
US20170005055A1 (en) | 2017-01-05 |
US20130344693A1 (en) | 2013-12-26 |
TW200924091A (en) | 2009-06-01 |
US20160079202A1 (en) | 2016-03-17 |
TWI453842B (zh) | 2014-09-21 |
US20170338197A1 (en) | 2017-11-23 |
US20090121349A1 (en) | 2009-05-14 |
US8785318B2 (en) | 2014-07-22 |
JP5291917B2 (ja) | 2013-09-18 |
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