JP2015032661A - 半導体装置とその製造方法および半導体装置の実装方法 - Google Patents
半導体装置とその製造方法および半導体装置の実装方法 Download PDFInfo
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- JP2015032661A JP2015032661A JP2013160544A JP2013160544A JP2015032661A JP 2015032661 A JP2015032661 A JP 2015032661A JP 2013160544 A JP2013160544 A JP 2013160544A JP 2013160544 A JP2013160544 A JP 2013160544A JP 2015032661 A JP2015032661 A JP 2015032661A
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Abstract
Description
本実施の形態の半導体装置を、図面を参照して説明する。図1は、本実施の形態の半導体装置の要部平面図である。図1は、半導体装置の最上層配線である再配線層の平面パターンを示しており、半導体装置(半導体チップ)のコーナー部における一部分のみの平面パターンを示している。
本実施の形態2は、上記の実施の形態1の変形例に対応している。
BP ボンディングパッド
BW ボンディングワイヤ
CT コンタクトホール
CM Cuメッキ膜
DP ダイパッド
DR ダイシング領域
EST エッチングストッパ膜
INS1 第1層間絶縁膜
INS2 第2層間絶縁膜
INS3 第3層間絶縁膜
LT リード端子
M1 第1配線
M2 第2配線
M3 第3配線
MD1 第1ダミー配線
MD2 第2ダミー配線
MD3 第3ダミー配線
MSD メッキシード膜
NCH、PCH チャネル形成領域
NG、PG ゲート電極
NGI、PGI ゲート絶縁膜
NSD、PSD ソース領域またはドレイン領域
NM Niメッキ膜
NTM Niメッキ薄膜
NW N型ウエル領域
N−MISFET N型MISFET
OP 開口
PLUG1 第1プラグ電極
PLUG2 第2プラグ電極
PLUG3 第3プラグ電極
PR1 第1ホトレジスト膜
PR2 第2ホトレジスト膜
PR3 第3ホトレジスト膜
PRO 保護膜
PV パッシベーション膜
PV1 第1パッシベーション膜
PV2 第2パッシベーション膜
PV3 第3パッシベーション膜
PW P型ウエル領域
P−MISFET P型MISFET
RB 封止体
SB 半導体基板
SD 半導体装置
SINS11、SINS12、SISN21、SINS22、SINS31、SINS32 サブ層間絶縁膜
STI 素子分離膜
V1 第1ビアホール
V2 第2ビアホール
V3 第3ビアホール
V4 第4ビアホール
WF ウエハ
WM 再配線層
WMW 配線
Claims (20)
- 半導体基板と、
前記半導体基板上に形成された第1絶縁膜と、
前記第1絶縁膜上に形成された第1膜厚を有する複数の第1配線と、
前記複数の第1配線を覆う無機絶縁膜からなり、CMPが施された平坦表面を有する第2絶縁膜と、
前記第2絶縁膜の前記平坦表面上に形成された無機絶縁膜からなる第3絶縁膜と、
前記第3絶縁膜上に形成された第2膜厚を有する複数の第2配線と、
を有し、
前記第3絶縁膜は、前記第2絶縁膜よりも耐湿性が高く、
前記第2膜厚は、前記第1膜厚の10倍以上であり、
前記第2配線は、前記第3絶縁膜との間に有機絶縁膜を介在させることなく前記第3絶縁膜上に位置している、半導体装置。 - 請求項1に記載の半導体装置において、
前記第1配線間の領域における前記第2絶縁膜の膜厚は、前記第1配線の上方における前記第2絶縁膜の膜厚と、前記第1膜厚との和にほぼ等しい。 - 請求項2に記載の半導体装置において、
前記第1配線間の領域における前記第2絶縁膜の膜厚をd1、前記第1配線の上方における前記第2絶縁膜の膜厚をd2、前記第1膜厚をd3とすると、d2+d3−d1≦d3×20%の関係となる。 - 請求項1に記載の半導体装置において、
前記第3絶縁膜は、前記第2配線が収縮することによって前記半導体基板が受ける応力の向きと反対方向の応力を有する。 - 請求項4に記載の半導体装置において、
前記第3絶縁膜は、圧縮応力を有する。 - 請求項5に記載の半導体装置において、
前記第3絶縁膜は、窒化シリコン膜からなり、その膜厚は600nm以上2000nm以下である。 - 請求項4に記載の半導体装置において、
前記第3絶縁膜は窒化シリコン膜からなり、前記第2配線は銅膜からなる。 - 請求項7に記載の半導体装置において、
前記第2配線は、銅膜とニッケル膜の積層膜からなる。 - 請求項7に記載の半導体装置において、
前記第2配線には、ボンディングワイヤが接続されている。 - (a)半導体基板上に、第1絶縁膜を介して、第1膜厚を有する複数の第1配線を形成する工程、
(b)前記第1配線上に無機絶縁膜からなる第1表面を有する第2絶縁膜を形成する工程、
(c)前記第2絶縁膜の前記第1表面にCMP処理を施し、平坦化された第2表面を形成する工程、
(d)前記第2表面上に、前記第2絶縁膜よりも耐湿性が高い無機絶縁膜からなる第3絶縁膜を形成する工程、
(e)前記第3絶縁膜上に、前記第1膜厚の10倍以上である第2膜厚を有する複数の第2配線を形成する工程、
を有する、半導体装置の製造方法。 - 請求項10に記載の半導体装置の製造方法において、
前記工程(b)の前記第2絶縁膜形成工程は、
(b−1)前記第1配線上にHDP−CVD法により第1サブ絶縁膜を形成する工程、
(b−2)前記第1サブ絶縁膜上にP−TEOS膜からなる第2サブ絶縁膜を形成する工程、
を有する。 - 請求項10に記載の半導体装置の製造方法において、
前記工程(e)は、
(e−1)前記第3絶縁膜上にスパッタ法により銅シード膜を形成する工程、
(e−2)前記銅シード膜上に前記第2配線の形成領域に開口を有するホトレジスト膜を形成する工程、
(e−3)前記ホトレジスト膜の前記開口部分にメッキ法により銅配線膜を形成する工程、
を有する。 - 請求項12に記載の半導体装置の製造方法において、
前記工程(e−3)の後に、
(e−4)前記銅配線膜上に、メッキ法によりニッケル配線膜を形成する工程、
を有する。 - 請求項10に記載の半導体装置の製造方法において、
前記第3絶縁膜は、窒化シリコン膜からなり、前記第2配線が収縮することによって前記半導体基板が受ける応力の向きと反対方向の応力を有する。 - 請求項10に記載の半導体装置の製造方法において、
前記第1絶縁膜上には、前記第1配線と隣接するようにダミー配線が形成されており、前記ダミー配線は、平面的に、前記第2配線と重なる。 - 請求項12に記載の半導体装置の製造方法において、
前記工程(e−1)の前に、更に、
(e−5)前記第3絶縁膜上に、高指向性スパッタ法により窒化チタン膜を形成する工程、
を有する。 - (a)主面と、裏面とを有し、第3膜厚を有する半導体基板からなり、前記主面には、
前記半導体基板上に形成された第1絶縁膜と、
前記第1絶縁膜上に形成された第1膜厚を有する複数の第1配線と、
前記複数の第1配線を覆う無機絶縁膜からなり、CMPが施された平坦表面を有する第2絶縁膜と、
前記第2絶縁膜の前記平坦表面上に形成された無機絶縁膜からなる第3絶縁膜と、
前記第3絶縁膜上に形成された第2膜厚を有する複数の第2配線と、
を有し、
前記第3絶縁膜は、前記第2絶縁膜よりも耐湿性が高く、
前記第2膜厚は、前記第1膜厚の10倍以上であり、
前記第2配線は、前記第3絶縁膜との間に有機絶縁膜を介在させることなく前記第3絶縁膜上に位置している半導体装置、
が複数形成された半導体ウエハを準備する工程、
(b)前記半導体ウエハの前記主面側に第1テープを貼り付け、前記半導体ウエハの前記裏面に研磨を施すことにより、前記第3膜厚よりも薄い第4膜厚を有する薄型半導体ウエハを形成する工程、
(c)前記薄型半導体ウエハから前記第1テープを剥離した後、前記薄型半導体ウエハの裏面に第2テープを貼り付け、前記半導体装置の各々を分離する為に、前記薄型半導体ウエハの前記主面側にダイシングを施す工程、
を有する、半導体装置の実装方法。 - 請求項17に記載の半導体装置の実装方法において、
前記第3絶縁膜は、窒化シリコン膜からなり、前記第2配線が収縮することによって前記半導体基板が受ける応力の向きと反対方向の応力を有する。 - 請求項17に記載の半導体装置の実装方法において、
前記工程(c)の後に、
(d)前記半導体装置を、第1リード上に搭載する工程、
(e)前記第2配線と第2リードとをボンディングワイヤで接続する工程、
を有する。 - 請求項19に記載の半導体装置の実装方法において、
前記工程(e)の後に、
(f)前記半導体装置、前記第1リード、前記第2リードおよび前記ボンディングワイヤを樹脂で封止する工程、
を有する。
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CN201410334655.2A CN104347529A (zh) | 2013-08-01 | 2014-07-14 | 半导体装置及其制造方法、以及半导体装置的安装方法 |
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