KR100823648B1 - 반도체장치의 제조 방법 - Google Patents

반도체장치의 제조 방법 Download PDF

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Publication number
KR100823648B1
KR100823648B1 KR1020070005893A KR20070005893A KR100823648B1 KR 100823648 B1 KR100823648 B1 KR 100823648B1 KR 1020070005893 A KR1020070005893 A KR 1020070005893A KR 20070005893 A KR20070005893 A KR 20070005893A KR 100823648 B1 KR100823648 B1 KR 100823648B1
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metal layer
semiconductor wafer
heat treatment
forming
manufacturing
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Korean (ko)
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KR20070077450A (ko
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타미오 마쓰무라
타다시 쯔지노
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미쓰비시덴키 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01331—Manufacture or treatment of die-attach connectors using blanket deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01361—Chemical or physical modification, e.g. by sintering or anodisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07336—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor

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  • Electrodes Of Semiconductors (AREA)
KR1020070005893A 2006-01-23 2007-01-19 반도체장치의 제조 방법 Active KR100823648B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00013349 2006-01-23
JP2006013349A JP2007194514A (ja) 2006-01-23 2006-01-23 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR20070077450A KR20070077450A (ko) 2007-07-26
KR100823648B1 true KR100823648B1 (ko) 2008-04-21

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KR1020070005893A Active KR100823648B1 (ko) 2006-01-23 2007-01-19 반도체장치의 제조 방법

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US (1) US8183144B2 (https=)
JP (1) JP2007194514A (https=)
KR (1) KR100823648B1 (https=)
CN (1) CN100524632C (https=)
AT (1) AT503190B1 (https=)
DE (1) DE102006062029B4 (https=)
TW (1) TW200737382A (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4221012B2 (ja) * 2006-06-12 2009-02-12 トヨタ自動車株式会社 半導体装置とその製造方法
WO2009141740A2 (en) * 2008-05-23 2009-11-26 Florian Bieck Semiconductor wafer and method for producing the same
JP2010021171A (ja) * 2008-07-08 2010-01-28 Renesas Technology Corp 半導体装置の製造方法およびそれに用いる半導体製造装置
JPWO2010109572A1 (ja) * 2009-03-23 2012-09-20 トヨタ自動車株式会社 半導体装置
JP5545000B2 (ja) * 2010-04-14 2014-07-09 富士電機株式会社 半導体装置の製造方法
JP2012248572A (ja) * 2011-05-25 2012-12-13 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法
KR101923127B1 (ko) * 2011-09-08 2018-11-28 후지 덴키 가부시키가이샤 반도체 장치 및 반도체 장치의 제조방법
JP6289104B2 (ja) * 2014-01-08 2018-03-07 日東電工株式会社 フィルム状接着剤、フィルム状接着剤付きダイシングテープ、半導体装置の製造方法、及び半導体装置
CN108352298B (zh) * 2015-11-09 2023-04-18 应用材料公司 底部处理
JP2023073724A (ja) * 2021-11-16 2023-05-26 株式会社フルヤ金属 半導体デバイス及びそれに用いる酸化防止用金属材料並びに該金属材料のスパッタリングターゲット及び蒸着源

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KR930017092A (ko) * 1992-01-15 1993-08-30 김광호 반도체장치 및 그 제조방법
KR960026252A (ko) * 1994-12-22 1996-07-22 이데이 노부유키 오믹전극을 가지는 반도체장치와 제법
KR20000039690A (ko) * 1998-12-15 2000-07-05 김영환 반도체장치의 배리어층 형성방법
KR20020061752A (ko) * 2001-01-17 2002-07-25 주식회사 하이닉스반도체 반도체장치의 배리어층 형성방법
JP2003282845A (ja) * 2002-03-20 2003-10-03 Mitsubishi Electric Corp 炭化ケイ素基板の製造方法およびその製造方法により製造された炭化ケイ素基板、ならびに、ショットキーバリアダイオードおよび炭化ケイ素薄膜の製造方法
KR20030091659A (ko) * 2002-05-22 2003-12-03 미쓰비시덴키 가부시키가이샤 반도체장치 및 그 제조방법
KR20040021761A (ko) * 2002-09-04 2004-03-11 한국전기연구원 금속 게이트 전극을 갖는 탄화규소 모스펫 소자 및 그제조방법
JP2004153081A (ja) * 2002-10-31 2004-05-27 Shin Etsu Handotai Co Ltd Ｓｏｉウエーハ及びｓｏｉウエーハの製造方法
JP2005150297A (ja) * 2003-11-13 2005-06-09 Seiko Epson Corp 電気光学装置用基板の製造方法、電気光学装置用基板、電気光学装置、電子機器
KR20050059259A (ko) * 2002-10-30 2005-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 반도체장치의 제작방법

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JPS5950090B2 (ja) * 1977-07-07 1984-12-06 三菱電機株式会社 半導体装置の製造方法
JPS55111140A (en) * 1979-02-20 1980-08-27 Nec Corp Metalizing method for back surface of silicon wafer
JPS58106825A (ja) * 1981-12-18 1983-06-25 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
DE3301666A1 (de) 1983-01-20 1984-07-26 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren zur herstellung einer mehrschichtigen kontaktmetallisierung
DD277602A3 (de) 1987-12-21 1990-04-11 Akad Wissenschaften Ddr Verfahren zur Herstellung eines weichlötfähigen Mehrschichtkontaktsystems für Halbleiterbauelemente
DE3823347A1 (de) 1988-07-09 1990-01-11 Semikron Elektronik Gmbh Leistungs-halbleiterelement
US5342793A (en) * 1990-02-20 1994-08-30 Sgs-Thomson Microelectronics, S.R.L. Process for obtaining multi-layer metallization of the back of a semiconductor substrate
JPH0472764A (ja) 1990-07-13 1992-03-06 Sharp Corp 半導体装置の裏面電極
JP3127494B2 (ja) * 1991-07-17 2001-01-22 株式会社デンソー 半導体装置の電極形成方法
DE69223868T2 (de) 1991-07-17 1998-09-03 Denso Corp Verfahren zur Herstellung von Elektroden eines Halbleiterbauelements
JPH0637301A (ja) * 1992-07-20 1994-02-10 Toyota Motor Corp 半導体装置及びその製造方法
DE19527209A1 (de) * 1995-07-27 1997-01-30 Philips Patentverwaltung Halbleitervorrichtung
US6140703A (en) * 1996-08-05 2000-10-31 Motorola, Inc. Semiconductor metallization structure
DE19734434C1 (de) 1997-08-08 1998-12-10 Siemens Ag Halbleiterkörper mit Rückseitenmetallisierung und Verfahren zu deren Herstellung
JP3960739B2 (ja) 2000-07-11 2007-08-15 シャープ株式会社 半導体装置とその製造方法
JP2003059860A (ja) * 2001-08-13 2003-02-28 Mitsubishi Electric Corp 半導体装置
CN100454492C (zh) 2002-06-13 2009-01-21 衡阳科晶微电子有限公司 共晶焊背面金属化工艺
TWI247576B (en) * 2003-03-28 2006-01-11 Hon Hai Prec Ind Co Ltd Method of manufacturing electromagnetic interference shield
JP4049035B2 (ja) * 2003-06-27 2008-02-20 株式会社デンソー 半導体装置の製造方法
JP3767585B2 (ja) 2003-07-11 2006-04-19 株式会社デンソー 半導体装置
US7214620B2 (en) * 2003-10-28 2007-05-08 Samsung Electronics Co., Ltd. Methods of forming silicide films with metal films in semiconductor devices and contacts including the same
US20050268963A1 (en) * 2004-02-24 2005-12-08 David Jordan Process for manufacturing photovoltaic cells
JP4788390B2 (ja) * 2005-06-07 2011-10-05 株式会社デンソー 半導体装置の製造方法

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Publication number Priority date Publication date Assignee Title
KR930017092A (ko) * 1992-01-15 1993-08-30 김광호 반도체장치 및 그 제조방법
KR960026252A (ko) * 1994-12-22 1996-07-22 이데이 노부유키 오믹전극을 가지는 반도체장치와 제법
KR20000039690A (ko) * 1998-12-15 2000-07-05 김영환 반도체장치의 배리어층 형성방법
KR20020061752A (ko) * 2001-01-17 2002-07-25 주식회사 하이닉스반도체 반도체장치의 배리어층 형성방법
JP2003282845A (ja) * 2002-03-20 2003-10-03 Mitsubishi Electric Corp 炭化ケイ素基板の製造方法およびその製造方法により製造された炭化ケイ素基板、ならびに、ショットキーバリアダイオードおよび炭化ケイ素薄膜の製造方法
KR20030091659A (ko) * 2002-05-22 2003-12-03 미쓰비시덴키 가부시키가이샤 반도체장치 및 그 제조방법
KR20040021761A (ko) * 2002-09-04 2004-03-11 한국전기연구원 금속 게이트 전극을 갖는 탄화규소 모스펫 소자 및 그제조방법
KR20050059259A (ko) * 2002-10-30 2005-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 반도체장치의 제작방법
JP2004153081A (ja) * 2002-10-31 2004-05-27 Shin Etsu Handotai Co Ltd Ｓｏｉウエーハ及びｓｏｉウエーハの製造方法
JP2005150297A (ja) * 2003-11-13 2005-06-09 Seiko Epson Corp 電気光学装置用基板の製造方法、電気光学装置用基板、電気光学装置、電子機器

Also Published As

Publication number Publication date
CN101009221A (zh) 2007-08-01
AT503190A2 (de) 2007-08-15
AT503190B1 (de) 2010-03-15
US20070173045A1 (en) 2007-07-26
KR20070077450A (ko) 2007-07-26
AT503190A3 (de) 2008-05-15
CN100524632C (zh) 2009-08-05
DE102006062029A1 (de) 2007-08-09
US8183144B2 (en) 2012-05-22
JP2007194514A (ja) 2007-08-02
TW200737382A (en) 2007-10-01
DE102006062029B4 (de) 2010-04-08

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