AT503190A3 - Verfahren zur herstellung einer halbleitervorrichtung - Google Patents
Verfahren zur herstellung einer halbleitervorrichtung Download PDFInfo
- Publication number
- AT503190A3 AT503190A3 AT0010207A AT1022007A AT503190A3 AT 503190 A3 AT503190 A3 AT 503190A3 AT 0010207 A AT0010207 A AT 0010207A AT 1022007 A AT1022007 A AT 1022007A AT 503190 A3 AT503190 A3 AT 503190A3
- Authority
- AT
- Austria
- Prior art keywords
- producing
- semiconductor device
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4827—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04026—Bonding areas specifically adapted for layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/275—Manufacturing methods by chemical or physical modification of a pre-existing or pre-deposited material
- H01L2224/27505—Sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006013349A JP2007194514A (ja) | 2006-01-23 | 2006-01-23 | 半導体装置の製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
AT503190A2 AT503190A2 (de) | 2007-08-15 |
AT503190A3 true AT503190A3 (de) | 2008-05-15 |
AT503190B1 AT503190B1 (de) | 2010-03-15 |
Family
ID=38282344
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT0010207A AT503190B1 (de) | 2006-01-23 | 2007-01-22 | Verfahren zur herstellung einer halbleitervorrichtung |
Country Status (7)
Country | Link |
---|---|
US (1) | US8183144B2 (de) |
JP (1) | JP2007194514A (de) |
KR (1) | KR100823648B1 (de) |
CN (1) | CN100524632C (de) |
AT (1) | AT503190B1 (de) |
DE (1) | DE102006062029B4 (de) |
TW (1) | TW200737382A (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4221012B2 (ja) * | 2006-06-12 | 2009-02-12 | トヨタ自動車株式会社 | 半導体装置とその製造方法 |
WO2009141740A2 (en) * | 2008-05-23 | 2009-11-26 | Florian Bieck | Semiconductor wafer and method for producing the same |
JP2010021171A (ja) * | 2008-07-08 | 2010-01-28 | Renesas Technology Corp | 半導体装置の製造方法およびそれに用いる半導体製造装置 |
JPWO2010109572A1 (ja) | 2009-03-23 | 2012-09-20 | トヨタ自動車株式会社 | 半導体装置 |
JP5545000B2 (ja) * | 2010-04-14 | 2014-07-09 | 富士電機株式会社 | 半導体装置の製造方法 |
JP2012248572A (ja) * | 2011-05-25 | 2012-12-13 | Mitsubishi Electric Corp | 半導体装置および半導体装置の製造方法 |
EP2733746B1 (de) * | 2011-09-08 | 2019-05-22 | Fuji Electric Co., Ltd. | Herstellungsverfahren für ein halbleiterbauelement |
JP6289104B2 (ja) * | 2014-01-08 | 2018-03-07 | 日東電工株式会社 | フィルム状接着剤、フィルム状接着剤付きダイシングテープ、半導体装置の製造方法、及び半導体装置 |
CN108352298B (zh) * | 2015-11-09 | 2023-04-18 | 应用材料公司 | 底部处理 |
JP2023073724A (ja) * | 2021-11-16 | 2023-05-26 | 株式会社フルヤ金属 | 半導体デバイス及びそれに用いる酸化防止用金属材料並びに該金属材料のスパッタリングターゲット及び蒸着源 |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1149606A (en) | 1967-02-27 | 1969-04-23 | Motorola Inc | Mounting for a semiconductor wafer which is resistant to fatigue caused by thermal stresses |
JPS5950090B2 (ja) * | 1977-07-07 | 1984-12-06 | 三菱電機株式会社 | 半導体装置の製造方法 |
JPS55111140A (en) * | 1979-02-20 | 1980-08-27 | Nec Corp | Metalizing method for back surface of silicon wafer |
JPS58106825A (ja) * | 1981-12-18 | 1983-06-25 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
DE3301666A1 (de) | 1983-01-20 | 1984-07-26 | Brown, Boveri & Cie Ag, 6800 Mannheim | Verfahren zur herstellung einer mehrschichtigen kontaktmetallisierung |
DD277602A3 (de) | 1987-12-21 | 1990-04-11 | Akad Wissenschaften Ddr | Verfahren zur Herstellung eines weichlötfähigen Mehrschichtkontaktsystems für Halbleiterbauelemente |
DE3823347A1 (de) | 1988-07-09 | 1990-01-11 | Semikron Elektronik Gmbh | Leistungs-halbleiterelement |
US5342793A (en) * | 1990-02-20 | 1994-08-30 | Sgs-Thomson Microelectronics, S.R.L. | Process for obtaining multi-layer metallization of the back of a semiconductor substrate |
JPH0472764A (ja) | 1990-07-13 | 1992-03-06 | Sharp Corp | 半導体装置の裏面電極 |
JP3127494B2 (ja) * | 1991-07-17 | 2001-01-22 | 株式会社デンソー | 半導体装置の電極形成方法 |
EP0523701B1 (de) | 1991-07-17 | 1998-01-07 | Denso Corporation | Verfahren zur Herstellung von Elektroden eines Halbleiterbauelements |
KR930017092A (ko) * | 1992-01-15 | 1993-08-30 | 김광호 | 반도체장치 및 그 제조방법 |
JPH0637301A (ja) * | 1992-07-20 | 1994-02-10 | Toyota Motor Corp | 半導体装置及びその製造方法 |
US5924002A (en) * | 1994-12-22 | 1999-07-13 | Sony Corporation | Method of manufacturing a semiconductor device having ohmic electrode |
DE19527209A1 (de) * | 1995-07-27 | 1997-01-30 | Philips Patentverwaltung | Halbleitervorrichtung |
US6140703A (en) * | 1996-08-05 | 2000-10-31 | Motorola, Inc. | Semiconductor metallization structure |
DE19734434C1 (de) | 1997-08-08 | 1998-12-10 | Siemens Ag | Halbleiterkörper mit Rückseitenmetallisierung und Verfahren zu deren Herstellung |
KR100365436B1 (ko) * | 1998-12-15 | 2003-04-10 | 주식회사 하이닉스반도체 | 반도체장치의배리어층형성방법 |
JP3960739B2 (ja) | 2000-07-11 | 2007-08-15 | シャープ株式会社 | 半導体装置とその製造方法 |
KR100724143B1 (ko) * | 2001-01-17 | 2007-06-04 | 매그나칩 반도체 유한회사 | 반도체장치의 배리어층 형성방법 |
JP2003059860A (ja) * | 2001-08-13 | 2003-02-28 | Mitsubishi Electric Corp | 半導体装置 |
JP2003282845A (ja) * | 2002-03-20 | 2003-10-03 | Mitsubishi Electric Corp | 炭化ケイ素基板の製造方法およびその製造方法により製造された炭化ケイ素基板、ならびに、ショットキーバリアダイオードおよび炭化ケイ素薄膜の製造方法 |
JP2003338620A (ja) * | 2002-05-22 | 2003-11-28 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
CN100454492C (zh) | 2002-06-13 | 2009-01-21 | 衡阳科晶微电子有限公司 | 共晶焊背面金属化工艺 |
JP2004153081A (ja) * | 2002-10-31 | 2004-05-27 | Shin Etsu Handotai Co Ltd | Soiウエーハ及びsoiウエーハの製造方法 |
KR100477396B1 (ko) * | 2002-09-04 | 2005-03-28 | 한국전기연구원 | 금속 게이트 전극을 갖는 탄화규소 모스펫 소자 및 그제조방법 |
KR101079757B1 (ko) * | 2002-10-30 | 2011-11-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 및 반도체장치의 제작방법 |
TWI247576B (en) * | 2003-03-28 | 2006-01-11 | Hon Hai Prec Ind Co Ltd | Method of manufacturing electromagnetic interference shield |
JP4049035B2 (ja) * | 2003-06-27 | 2008-02-20 | 株式会社デンソー | 半導体装置の製造方法 |
JP3767585B2 (ja) | 2003-07-11 | 2006-04-19 | 株式会社デンソー | 半導体装置 |
US7214620B2 (en) * | 2003-10-28 | 2007-05-08 | Samsung Electronics Co., Ltd. | Methods of forming silicide films with metal films in semiconductor devices and contacts including the same |
JP4792694B2 (ja) * | 2003-11-13 | 2011-10-12 | セイコーエプソン株式会社 | 電気光学装置用基板の製造方法、電気光学装置用基板、電気光学装置、電子機器 |
EP1730788A1 (de) * | 2004-02-24 | 2006-12-13 | BP Corporation North America Inc. | Prozess zur herstellung photovoltaischer zellen |
JP4788390B2 (ja) * | 2005-06-07 | 2011-10-05 | 株式会社デンソー | 半導体装置の製造方法 |
-
2006
- 2006-01-23 JP JP2006013349A patent/JP2007194514A/ja active Pending
- 2006-11-17 US US11/561,038 patent/US8183144B2/en active Active
- 2006-11-24 TW TW095143544A patent/TW200737382A/zh unknown
- 2006-12-29 DE DE102006062029A patent/DE102006062029B4/de active Active
- 2006-12-29 CN CNB200610063646XA patent/CN100524632C/zh active Active
-
2007
- 2007-01-19 KR KR1020070005893A patent/KR100823648B1/ko active IP Right Grant
- 2007-01-22 AT AT0010207A patent/AT503190B1/de not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE102006062029A1 (de) | 2007-08-09 |
KR20070077450A (ko) | 2007-07-26 |
TW200737382A (en) | 2007-10-01 |
DE102006062029B4 (de) | 2010-04-08 |
US8183144B2 (en) | 2012-05-22 |
JP2007194514A (ja) | 2007-08-02 |
AT503190B1 (de) | 2010-03-15 |
CN100524632C (zh) | 2009-08-05 |
CN101009221A (zh) | 2007-08-01 |
US20070173045A1 (en) | 2007-07-26 |
AT503190A2 (de) | 2007-08-15 |
KR100823648B1 (ko) | 2008-04-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE102005014722B8 (de) | Verfahren zur Herstellung einer Halbleitervorrichtung | |
DE602007012785D1 (de) | Verfahren zur Herstellung einer Photomaske | |
DE502007001932D1 (de) | Halbleiterschichtstruktur und Verfahren zur Herstellung einer Halbleiterschichtstruktur | |
DE602007010616D1 (de) | Verfahren zur herstellung einer organischen elektrovorrichtung | |
DE602005024742D1 (de) | Verfahren zur Herstellung einer unpolaren einkristtrid-Halbleiter | |
AT503190A3 (de) | Verfahren zur herstellung einer halbleitervorrichtung | |
DE602006008455D1 (de) | Verfahren zur herstellung einer polyimidfolie | |
DE602007010373D1 (de) | Verfahren zur Herstellung einer Wabenstruktur | |
DE602005027235D1 (de) | Verfahren zur herstellung einer fotomaske | |
DE602005020148D1 (de) | Verfahren zur herstellung einer mems-vorrichtung | |
ATE455105T1 (de) | Verfahren zur herstellung von difluormethylpyrazolylcarboxylaten | |
ATE529527T1 (de) | Verfahren zur herstellung von alkoholen | |
DE602005003082D1 (de) | Verfahren zur Herstellung einer Vorrichtung | |
DE102009044474A8 (de) | Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements | |
DE602007007464D1 (de) | Verfahren zur wiederherstellung einer polyolefinmiethylen-copolymer-kompatibilisierung | |
ATE480531T1 (de) | Verfahren zur herstellung von benzopyran-2- olderivaten | |
ATE526429T1 (de) | Verfahren zur herstellung einer beschichtung | |
DE602007009856D1 (de) | Verteilerleitung und verfahren zur herstellung einer verteilerleitung | |
DE502005005281D1 (de) | Verfahren zur herstellung einer nockenwelle | |
DE602005007398D1 (de) | Verfahren zur Herstellung einer Mikrolinse | |
DE502007005615D1 (de) | Verfahren zur herstellung eines piezoaktors | |
DE602006006758D1 (de) | Verfahren zur Herstellung einer Zahnstange | |
DE502005006608D1 (de) | Verfahren zur herstellung einer steckverbindung | |
ATE539067T1 (de) | Verfahren zur herstellung einer aminomethylthiazolverbindung | |
DE502006001490D1 (de) | Verfahren zur Herstellung einer Schlingeneinheit |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM01 | Lapse because of not paying annual fees |
Effective date: 20120122 |