KR100823648B1 - 반도체장치의 제조 방법 - Google Patents
반도체장치의 제조 방법 Download PDFInfo
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- KR100823648B1 KR100823648B1 KR1020070005893A KR20070005893A KR100823648B1 KR 100823648 B1 KR100823648 B1 KR 100823648B1 KR 1020070005893 A KR1020070005893 A KR 1020070005893A KR 20070005893 A KR20070005893 A KR 20070005893A KR 100823648 B1 KR100823648 B1 KR 100823648B1
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- metal layer
- semiconductor wafer
- heat treatment
- forming
- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 94
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 100
- 229910052751 metal Inorganic materials 0.000 claims abstract description 100
- 238000010438 heat treatment Methods 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 230000004888 barrier function Effects 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 24
- 229910021364 Al-Si alloy Inorganic materials 0.000 claims description 4
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000005245 sintering Methods 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910001316 Ag alloy Inorganic materials 0.000 description 3
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
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- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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Abstract
Description
Claims (7)
- 이면전극을 가지는 반도체장치의 제조 방법으로서,표면과 이면을 구비하는 반도체 웨이퍼를 준비하는 공정과,상기 반도체 웨이퍼의 이면에 제1금속층을 형성하고, 열처리에 의해 상기 반도체 웨이퍼와 상기 제1금속층과의 사이에 오믹 접합을 형성하는 열처리 공정과,상기 열처리 공정 후에, Ni로 이루어지는 제2금속층을, 상기 반도체기판의 이면위에 형성하는 공정을 포함하는 것을 특징으로 하는 반도체장치의 제조방법.
- 제 1항에 있어서,상기 열처리 공정 후에, 배리어 메탈층을 형성하고, 그 위에 상기 제2금속층을 형성하는 것을 특징으로 하는 반도체장치의 제조방법.
- 제 1항에 있어서,상기 제1금속층 위에 배리어 메탈층을 형성하고, 열처리 공정을 행한 후에, 상기 배리어 메탈층 위에 상기 제2금속층을 형성하는 것을 특징으로 하는 반도체장치의 제조방법.
- 제 1항에 있어서,상기 제1금속층 위에 배리어 메탈층을 형성하고, 열처리 공정을 행한 후에, 상기 배리어 메탈층 위에, 더 상기 배리어 메탈층을 추가로 형성하고, 그 위에 상기 제2금속층을 형성하는 것을 특징으로 하는 반도체장치의 제조방법.
- 제 1항 내지 제 4항 중 어느 한 항에 있어서,상기 제1금속층은, Al 및 Al-Si합금으로 이루어지는 군으로부터 선택되는 재료로 이루어지는 것을 특징으로 하는 반도체장치의 제조방법.
- 제 1항 내지 제 4항 중 어느 한 항에 있어서,상기 열처리 공정후의 공정이, 상기 반도체 웨이퍼의 온도를 상기 열처리 공정보다 낮은 온도로 유지하여 행해지는 것을 특징으로 하는 반도체장치의 제조방법.
- 제 6항에 있어서,상기 반도체 웨이퍼의 온도가, 80℃이하인 것을 특징으로 하는 반도체장치의 제조방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2006-00013349 | 2006-01-23 | ||
JP2006013349A JP2007194514A (ja) | 2006-01-23 | 2006-01-23 | 半導体装置の製造方法 |
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Publication Number | Publication Date |
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KR20070077450A KR20070077450A (ko) | 2007-07-26 |
KR100823648B1 true KR100823648B1 (ko) | 2008-04-21 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020070005893A KR100823648B1 (ko) | 2006-01-23 | 2007-01-19 | 반도체장치의 제조 방법 |
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Country | Link |
---|---|
US (1) | US8183144B2 (ko) |
JP (1) | JP2007194514A (ko) |
KR (1) | KR100823648B1 (ko) |
CN (1) | CN100524632C (ko) |
AT (1) | AT503190B1 (ko) |
DE (1) | DE102006062029B4 (ko) |
TW (1) | TW200737382A (ko) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4221012B2 (ja) * | 2006-06-12 | 2009-02-12 | トヨタ自動車株式会社 | 半導体装置とその製造方法 |
WO2009141740A2 (en) * | 2008-05-23 | 2009-11-26 | Florian Bieck | Semiconductor wafer and method for producing the same |
JP2010021171A (ja) * | 2008-07-08 | 2010-01-28 | Renesas Technology Corp | 半導体装置の製造方法およびそれに用いる半導体製造装置 |
JPWO2010109572A1 (ja) | 2009-03-23 | 2012-09-20 | トヨタ自動車株式会社 | 半導体装置 |
JP5545000B2 (ja) * | 2010-04-14 | 2014-07-09 | 富士電機株式会社 | 半導体装置の製造方法 |
JP2012248572A (ja) * | 2011-05-25 | 2012-12-13 | Mitsubishi Electric Corp | 半導体装置および半導体装置の製造方法 |
EP2733746B1 (en) * | 2011-09-08 | 2019-05-22 | Fuji Electric Co., Ltd. | Method for manufacturing a semiconductor device |
JP6289104B2 (ja) * | 2014-01-08 | 2018-03-07 | 日東電工株式会社 | フィルム状接着剤、フィルム状接着剤付きダイシングテープ、半導体装置の製造方法、及び半導体装置 |
DE112016005136T5 (de) * | 2015-11-09 | 2018-07-26 | Applied Materials, Inc. | Unterseitenverarbeitung |
JP2023073724A (ja) * | 2021-11-16 | 2023-05-26 | 株式会社フルヤ金属 | 半導体デバイス及びそれに用いる酸化防止用金属材料並びに該金属材料のスパッタリングターゲット及び蒸着源 |
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KR20070077450A (ko) | 2007-07-26 |
US8183144B2 (en) | 2012-05-22 |
DE102006062029B4 (de) | 2010-04-08 |
AT503190A2 (de) | 2007-08-15 |
DE102006062029A1 (de) | 2007-08-09 |
AT503190A3 (de) | 2008-05-15 |
CN100524632C (zh) | 2009-08-05 |
CN101009221A (zh) | 2007-08-01 |
JP2007194514A (ja) | 2007-08-02 |
AT503190B1 (de) | 2010-03-15 |
TW200737382A (en) | 2007-10-01 |
US20070173045A1 (en) | 2007-07-26 |
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