CN113506784A - 一种具有特殊沟槽的高强度键合结构及其制备方法 - Google Patents
一种具有特殊沟槽的高强度键合结构及其制备方法 Download PDFInfo
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Abstract
本发明公开了一种具有特殊沟槽的高强度键合结构及其制备方法,通过采用干法刻蚀技术在硅基衬底上制作沟槽型键合结构;随后在沟槽结构上沉积粘附层金属及键合层金属,并与另一片硅基衬底上的键合层金属进行晶圆级键合,从而形成晶圆与晶圆间的高强度粘接。本发明避免了因键合强度不高导致的芯片堆叠过程中产生的失效风险,该方法可为三维集成微系统提供晶圆级堆叠解决方案。
Description
技术领域
本发明涉及半导体制造技术领域,特别涉及一种晶圆级键合结构及其制备方法。
背景技术
基于焊料体系的键合工艺是半导体制造领域中应用广泛的一种晶圆级键合技术。通过在键合晶圆间制作用于粘接的金属焊料,在不高于300℃的温度下完成键合工艺,实现晶圆间高可靠性、高强度的粘接,为三维集成微系统提供高效可靠的晶圆级堆叠方案。目前主要使用的焊料为AuSn、AgSn、AgIn等焊料,相比较而言,AuSn焊料具有更高的结构强度、更好的抗蠕变特性。
然而合金焊料的晶圆级沉积方法大多具有较高的制作成本,因此目前主流的焊料键合方案为在晶圆上沉积单质Sn、In等低熔点金属,通过键合工艺提供的温度及压力使低熔点金属与其他高熔点金属,如Au、Cu等,发生金属间扩散,从而形成具有较高再熔化温度的金属间化合物。但是,在三维集成微系统中晶圆往往具有奇特的表面形貌,其采用的工艺也与传统半导体工艺有细微差别,通过上述方法完成的键合晶圆往往强度较低、焊料溢出情况严重,不仅提高了后续工艺过程中碎裂片风险,而且焊料溢出极易导致电路短路等芯片失效风险。
有鉴于此,有必要提供一种新型的用于焊料体系的键合结构及其制造方法,以解决上述技术问题。
发明内容
本发明的目的在于提供一种特殊沟槽的高强度键合结构及其制备方法,以解决上述背景技术中存在的技术问题。
本发明是通过以下技术方案实现的:
一种具有特殊沟槽的高强度键合结构,该键合结构包括键合在一起的第一和第二衬底,在第一衬底上设置沟槽,所述沟槽由长方形沟槽阵列及其外围的环状密封槽组成;在所述沟槽内部先沉积复合介质层,再在复合介质层上方沉积复合金属层,最后在所述沟槽内填充Sn金属或In金属,直至沟槽被完全填充。
一种具有特殊沟槽的高强度键合结构的制备方法,包括以下步骤:
步骤1,提供一衬底材料,并在该衬底上采用干法刻蚀制作出具有特殊形状的沟槽结构;
步骤2,在所述沟槽结构上沉积氮化硅与氧化硅的第一复合膜介质层;
步骤3,在所述第一复合膜介质层上沉积用作键合的第一金属层;
步骤4,提供另一衬底材料,并在该衬底上沉积氮化硅与氧化硅的第二复合介质膜层,在所述第二复合膜介质层上沉积用作键合的第二金属层;
步骤5,将所述两片衬底进行键合,得到具有垂直互连特性及高键合强度的键合结构。
进一步地,所述特殊形状的沟槽结构由长方形沟槽阵列及其外围的矩形环状密封槽组成;其中长方形沟槽长度为50-500um,宽度为3-10um,相邻沟槽间隔为10-100um,沟槽深度为1-5um;矩形环状密封槽宽度为3-10um,与长方形沟槽阵列的距离10-30um。
进一步地,所述复合膜介质层通过等离子增强化学气相沉积的生长方式形成,所述氮化硅膜厚为50-200nm,氧化硅膜厚为200-800nm。
进一步地,所述第一层金属由Au/Cu/Ag中的一种或多种金属组成,第二层金属为金属1/金属2/金属3所依次堆叠组成的复合金属层,其中金属1由Au/Cu/Ag/Ni/Ti中的一种或多种金属组成,金属2由Sn/In中的一种或多种金属组成,金属3由Au/Cu/Ag/Ni/Ti中的一种或多种金属组成。
进一步地,所述键合处理包括预键合和高温加固两个步骤;其中预键合温度为200-320℃,升温速率30℃/min,预键合氛围为真空;高温加固温度为200-320℃,退火气氛为氮气。
与现有技术相比,本发明的显著优点为:
1、本发明的沟槽型特殊键合结构,采用阻焊沟槽(矩形环状密封槽)与键合加强沟槽(长方形沟槽阵列)相结合的方式,通过金属和金属间的键合,形成具有垂直互连特性的键合区域,该区域具有较高的键合强度,且能够有效阻止焊料溢出防止相邻金属间短路;相比于现有技术中直接采用平面方式进行键合的工艺,大幅提升了键合强度并有效抑制了焊料外溢;
2、在两个衬底上分别沉积用于键合的金属层,采用以焊料为基础的键合工艺,无需在键合区域沉积合金焊料,这使得工艺成本大大降低。
附图说明
为了更清楚地说明本发明实施例中的技术方案和优点,下面将对实施例描述中所需要使用的附图作简单的介绍。
图1为本发明的沟槽型特殊键合结构的制备方法流程图;
图2为本发明的含沟槽特殊键合结构的硅衬底表面沉积第一层金属的结构侧视图;
图3为本发明的不含沟槽特殊键合结构的另一硅衬底表面沉积第二层金属的结构侧视图;
图4为本发明的键合体结构示意图;
图5为第一衬底上密封槽及沟槽阵列结构的俯视图。
具体实施方式
下面对本发明技术方案进行详细说明,但是本发明的保护范围不局限于所述实施例。
本发明提供了一种具有特殊沟槽的高强度键合结构,该键合结构包括键合在一起的第一和第二衬底,在第一衬底上设置沟槽,所述沟槽由长方形沟槽阵列及其外围的环状密封槽组成。
参阅图1,该高强度键合结构的制备方法包括以下步骤:
步骤1,提供一硅衬底材料1,在该衬底上光刻图形化,经干法刻蚀及去胶后制作出具有特殊形状的沟槽结构2,所述沟槽结构2为长方形沟槽阵列41与矩形环状密封槽42组成,如图5所示;
步骤2,在沟槽结构2上采用等离子增强化学气相沉积方式制作氮化硅与氧化硅的复合介质膜,经光刻图形化及干法刻蚀后得到复合膜介质层3,在复合介质膜3通过金属沉积、光刻图形化、湿法腐蚀后得到用作键合的第一金属层4,如图2所示;
步骤4,提供另一硅衬底材料21,在该衬底上采用等离子增强化学气相沉积方式制作氮化硅与氧化硅的复合介质膜,经光刻图形化及干法刻蚀后得到复合膜介质层23,在复合介质膜23上通过金属沉积、光刻图形化、湿法腐蚀后得到用作键合的第二金属层22,如图3所示;
步骤5,如图4所示,将所述两片硅衬底进行键合,使其在键合区域完成金属间键合,得到具有垂直互连特性及高键合强度的键合结构31,同时具有较高强度。
下面结合实施例对本发明作进一步的详细说明。
实施例1
本实施例的含沟槽的高强度键合结构的制备方法包括以下步骤:
步骤1,提供一硅衬底材料1,该硅衬底材料为(100)型硅,在该衬底上光刻图形化及干法刻蚀后制作出具有特殊形状的沟槽结构2,沟槽结构2由长方形沟槽阵列41与矩形环状密封槽42组成,其中长方形沟槽长度为300um,宽度为5um,相邻沟槽间隔为15um,沟槽深度为3um;矩形环状密封槽宽度为10um,与长方形沟槽阵列距离15um;
步骤2,在特殊沟槽结构2上先后沉积氮化硅与氧化硅的复合介质膜层3,复合介质膜通过等离子增强化学气相沉积的生长方式形成,其中氮化硅膜厚为50nm,氧化硅膜厚为500nm,在复合介质膜3上沉积一金属层4,第一金属层4由Ti/Au组成,其中Ti通过溅射制作且厚度为200nm,Au通过溅射种子层及电镀制作且厚度为4um;
步骤4,提供另一硅衬底材料21,该硅衬底材料为(100)型硅,在该衬底上先后沉积氮化硅与氧化硅的复合介质膜层23,复合介质膜通过等离子增强化学气相沉积的生长方式形成,其中氮化硅膜厚为50nm,氧化硅膜厚为500nm,,在复合介质膜23上沉积第二金属层22,第二金属层22由Ti/Au/Sn/Au组成,其中Ti通过溅射制作且厚度为200nm,Au通过溅射种子层及电镀制作且厚度为4um,Sn通过蒸发制作且厚度为2um,Au通过蒸发制作且厚度为50nm;
步骤5,将所述两片硅衬底进行键合,使其在键合区域完成金属间键合,键合温度为320℃,升温速率为30℃/min,键合时间为10min,最终得到具有垂直互连特性的键合体31,同时具有较高强度。
实施例2
本实施例的含沟槽的高强度键合结构的制备方法包括以下步骤:
步骤1,提供一硅衬底材料1,该硅衬底材料为(100)型硅,在该衬底上光刻图形化及干法刻蚀后制作出具有特殊形状的沟槽结构2,沟槽结构2由长方形沟槽阵列41与矩形环状密封槽42组成,其中长方形沟槽长度为500um,宽度为10um,相邻沟槽间隔为15um,沟槽深度为2um;矩形环状密封槽宽度为15um,与长方形沟槽阵列距离30um;
步骤2,在特殊沟槽结构2上先后沉积氮化硅与氧化硅的复合介质膜层3,复合介质膜通过等离子增强化学气相沉积的生长方式形成,其中氮化硅膜厚为100nm,氧化硅膜厚为800nm,在复合介质膜3上沉积一金属层4,第一金属层4由Ti/Au组成,其中Ti通过溅射制作且厚度为200nm,Au通过溅射种子层及电镀制作且厚度为4um;
步骤4,提供另一硅衬底材料21,该硅衬底材料为(100)型硅,在该衬底上先后沉积氮化硅与氧化硅的复合介质膜层23,复合介质膜通过等离子增强化学气相沉积的生长方式形成,其中氮化硅膜厚为100nm,氧化硅膜厚为800nm,,在复合介质膜23上沉积第二金属层22,第二金属层22由Ti/Au/In/Au组成,其中Ti通过溅射制作且厚度为200nm,Au通过溅射种子层及电镀制作且厚度为4um,In通过蒸发制作且厚度为2.5um,Au通过蒸发制作且厚度为50nm;
步骤5,将所述两片硅衬底进行键合,使其在键合区域完成金属间键合,键合温度为200℃,升温速率为30℃/min,键合时间为10min,最终得到具有垂直互连特性的键合体31,同时具有较高强度。
实施例3
本实施例的含沟槽的高强度键合结构的制备方法包括以下步骤:
步骤1,提供一硅衬底材料1,该硅衬底材料为(100)型硅,在该衬底上光刻图形化及干法刻蚀后制作出具有特殊形状的沟槽结构2,沟槽结构2由长方形沟槽阵列41与矩形环状密封槽42组成,其中长方形沟槽长度为100um,宽度为5um,相邻沟槽间隔为15um,沟槽深度为2um;矩形环状密封槽宽度为10um,与长方形沟槽阵列距离15um;
步骤2,在特殊沟槽结构2上先后沉积氮化硅与氧化硅的复合介质膜层3,复合介质膜通过等离子增强化学气相沉积的生长方式形成,其中氮化硅膜厚为100nm,氧化硅膜厚为800nm,在复合介质膜3上沉积一金属层4,第一金属层4由Ta/Cu组成,其中Ta通过溅射制作且厚度为200nm,Cu通过溅射种子层及电镀制作且厚度为4um;
步骤4,提供另一硅衬底材料21,该硅衬底材料为(100)型硅,在该衬底上先后沉积氮化硅与氧化硅的复合介质膜层23,复合介质膜通过等离子增强化学气相沉积的生长方式形成,其中氮化硅膜厚为100nm,氧化硅膜厚为800nm,,在复合介质膜23上沉积第二金属层22,第二金属层22由Ta/Cu/Sn/Au组成,其中Ta通过溅射制作且厚度为200nm,Cu通过溅射种子层及电镀制作且厚度为4um,Sn通过蒸发制作且厚度为2.5um,Au通过蒸发制作且厚度为50nm;
步骤5,将所述两片硅衬底进行键合,使其在键合区域完成金属间键合,键合温度为300℃,升温速率为30℃/min,键合时间为10min,最终得到具有垂直互连特性的键合体31,同时具有较高强度。
本发明通过采用干法刻蚀技术在硅基衬底上制作沟槽型键合结构;随后在沟槽结构上沉积粘附层金属及键合层金属,并与另一片硅基衬底上的键合层金属进行晶圆级键合,形成晶圆与晶圆间的高强度粘接,可以避免了因键合强度不高导致的芯片堆叠过程中产生的失效风险,该方法可为三维集成微系统提供晶圆级堆叠解决方案。
以上所述,仅为本发明中的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉该技术的人在本发明所揭露的技术范围内,可理解想到的变换或替换,都应涵盖在本发明的包含范围之内,因此,本发明的保护范围应该以权利要求书的保护范围为准。
Claims (9)
1.一种具有特殊沟槽的高强度键合结构,其特征在于,该键合结构包括键合在一起的第一和第二衬底,在第一衬底上设置沟槽,所述沟槽由长方形沟槽阵列及其外围的环状密封槽组成;在所述沟槽内部先沉积复合介质层,再在复合介质层上方沉积复合金属层,最后在所述沟槽内填充Sn金属或In金属,直至沟槽被完全填充。
2.根据权利要求1所述的一种具有特殊沟槽的高强度键合结构,其特征在于,所述长方形沟槽阵列中,长方形沟槽的长度为50-500um,宽度为3-10um,相邻长方形沟槽的间隔为10-100um,长方形沟槽深度为1-5um;所述环状密封槽为矩形环状,其宽度为3-10um,与长方形沟槽阵列的距离为10-30um。
3.一种具有特殊沟槽的高强度键合结构的制备方法,其特征在于,该方法包括以下步骤:
在第一衬底上采用干法刻蚀制作出如权利要求1或2所述的沟槽;
在所述沟槽上沉积氮化硅与氧化硅的第一复合膜介质层;
在所述第一复合介质膜上沉积用作键合的第一金属层;
在第二衬底上沉积氮化硅与氧化硅的第二复合介质膜层;
在所述第二复合介质膜层上沉积用作键合的第二金属层;
将所述第一和第二衬底进行键合,得到具有垂直互连特性及高键合强度的键合结构。
4.根据权利要求3所述的一种具有特殊沟槽的高强度键合结构的制备方法,其特征在于,所述第一和第二复合膜介质层通过等离子增强化学气相沉积的生长方式形成。
5.根据权利要求3所述的一种具有特殊沟槽的高强度键合结构的制备方法,其特征在于,所述氮化硅的厚度为50-200nm,氧化硅的厚度为200-800nm。
6.根据权利要求3所述的一种具有特殊沟槽的高强度键合结构的制备方法,其特征在于,所述第一层金属由Au/Cu/Ag中的一种或多种组成。
7.根据权利要求3所述的一种具有特殊沟槽的高强度键合结构的制备方法,其特征在于,第二层金属为第一金属、第二金属和第三金属依次堆叠组成的复合金属层,其中第一金属由Au/Cu/Ag/Ni/Ti中的一种或多种组成,第二金属由Sn/In中的一种或两种组成,第三金属由Au/Cu/Ag/Ni/Ti中的一种或多种组成。
8.根据权利要求3所述的一种具有特殊沟槽的高强度键合结构的制备方法,其特征在于,所述键合包括预键合和高温加固两个步骤。
9.根据权利要求8所述的一种具有特殊沟槽的高强度键合结构的制备方法,其特征在于,预键合温度为200-320℃,升温速率30℃/min,预键合氛围为真空;高温加固温度为200-320℃,退火气氛为氮气。
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