KR100732647B1 - 반도체장치 및 그 제조 방법 - Google Patents

반도체장치 및 그 제조 방법 Download PDF

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Publication number
KR100732647B1
KR100732647B1 KR1020050043401A KR20050043401A KR100732647B1 KR 100732647 B1 KR100732647 B1 KR 100732647B1 KR 1020050043401 A KR1020050043401 A KR 1020050043401A KR 20050043401 A KR20050043401 A KR 20050043401A KR 100732647 B1 KR100732647 B1 KR 100732647B1
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South Korea
Prior art keywords
element isolation
insulating film
film
semiconductor substrate
isolation insulating
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Expired - Fee Related
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KR1020050043401A
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English (en)
Korean (ko)
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KR20060048071A (ko
Inventor
노리오 이시츠카
준 타나카
토미오 이와사키
히로유키 오오타
Original Assignee
가부시끼가이샤 르네사스 테크놀로지
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0151—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6925—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising hydrogen silsesquioxane, e.g. HSQ
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6926—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising alkyl silsesquioxane, e.g. MSQ

Landscapes

  • Element Separation (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020050043401A 2004-05-25 2005-05-24 반도체장치 및 그 제조 방법 Expired - Fee Related KR100732647B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004154226A JP2005340327A (ja) 2004-05-25 2004-05-25 半導体装置及びその製造方法
JPJP-P-2004-00154226 2004-05-25

Publications (2)

Publication Number Publication Date
KR20060048071A KR20060048071A (ko) 2006-05-18
KR100732647B1 true KR100732647B1 (ko) 2007-06-27

Family

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Family Applications (1)

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KR1020050043401A Expired - Fee Related KR100732647B1 (ko) 2004-05-25 2005-05-24 반도체장치 및 그 제조 방법

Country Status (5)

Country Link
US (1) US7279769B2 (https=)
JP (1) JP2005340327A (https=)
KR (1) KR100732647B1 (https=)
CN (1) CN100461414C (https=)
TW (1) TWI282141B (https=)

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JP5195747B2 (ja) * 2007-03-27 2013-05-15 富士通セミコンダクター株式会社 半導体装置の製造方法
JP5525695B2 (ja) * 2007-06-20 2014-06-18 株式会社東芝 半導体装置およびその製造方法
US20110316117A1 (en) * 2007-08-14 2011-12-29 Agency For Science, Technology And Research Die package and a method for manufacturing the die package
US7871895B2 (en) * 2008-02-19 2011-01-18 International Business Machines Corporation Method and structure for relieving transistor performance degradation due to shallow trench isolation induced stress
JPWO2010073947A1 (ja) * 2008-12-25 2012-06-14 国立大学法人東北大学 半導体装置及びその製造方法
JPWO2011138906A1 (ja) * 2010-05-07 2013-07-22 国立大学法人東北大学 半導体装置の製造方法
JP2012009791A (ja) * 2010-06-28 2012-01-12 Panasonic Corp 固体撮像装置及びその製造方法
JP5405437B2 (ja) 2010-11-05 2014-02-05 ＡｚエレクトロニックマテリアルズＩｐ株式会社 アイソレーション構造の形成方法
JP2012134302A (ja) * 2010-12-21 2012-07-12 Jsr Corp トレンチ埋め込み方法、及びトレンチ埋め込み用組成物
JP2013074169A (ja) * 2011-09-28 2013-04-22 Kyocera Corp 薄膜配線基板
CN105493254B (zh) 2013-09-26 2020-12-29 英特尔公司 Nmos结构中形成位错增强的应变的方法
US10204982B2 (en) * 2013-10-08 2019-02-12 Stmicroelectronics, Inc. Semiconductor device with relaxation reduction liner and associated methods
FR3024587B1 (fr) * 2014-08-01 2018-01-26 Soitec Procede de fabrication d'une structure hautement resistive
US10822692B2 (en) * 2016-08-12 2020-11-03 University Of North Texas Binary Ag—Cu amorphous thin-films for electronic applications
KR102549340B1 (ko) * 2016-09-27 2023-06-28 삼성전자주식회사 반도체 장치 및 이의 제조 방법
CN110880473B (zh) * 2018-09-06 2025-02-25 长鑫存储技术有限公司 半导体器件、半导体器件制造方法

Citations (2)

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JPH1187489A (ja) 1997-09-10 1999-03-30 Asahi Chem Ind Co Ltd ポーラスシリコンを用いた素子分離膜形成方法
JP2002289681A (ja) 2001-03-26 2002-10-04 Mitsui Chemicals Inc 半導体装置

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JPH0547918A (ja) 1991-08-13 1993-02-26 Hitachi Ltd 半導体装置の製造方法
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JPH1187489A (ja) 1997-09-10 1999-03-30 Asahi Chem Ind Co Ltd ポーラスシリコンを用いた素子分離膜形成方法
JP2002289681A (ja) 2001-03-26 2002-10-04 Mitsui Chemicals Inc 半導体装置

Also Published As

Publication number Publication date
CN100461414C (zh) 2009-02-11
CN1716607A (zh) 2006-01-04
US20050269662A1 (en) 2005-12-08
TWI282141B (en) 2007-06-01
KR20060048071A (ko) 2006-05-18
JP2005340327A (ja) 2005-12-08
US7279769B2 (en) 2007-10-09
TW200605264A (en) 2006-02-01

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