TWI282141B - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof Download PDF

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Publication number
TWI282141B
TWI282141B TW094112882A TW94112882A TWI282141B TW I282141 B TWI282141 B TW I282141B TW 094112882 A TW094112882 A TW 094112882A TW 94112882 A TW94112882 A TW 94112882A TW I282141 B TWI282141 B TW I282141B
Authority
TW
Taiwan
Prior art keywords
insulating film
film
element isolation
oxide film
isolation insulating
Prior art date
Application number
TW094112882A
Other languages
English (en)
Chinese (zh)
Other versions
TW200605264A (en
Inventor
Norio Ishitsuka
Jun Tanaka
Tomio Iwasaki
Hiroyuki Ota
Original Assignee
Renesas Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Tech Corp filed Critical Renesas Tech Corp
Publication of TW200605264A publication Critical patent/TW200605264A/zh
Application granted granted Critical
Publication of TWI282141B publication Critical patent/TWI282141B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0151—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6925—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising hydrogen silsesquioxane, e.g. HSQ
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6926—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising alkyl silsesquioxane, e.g. MSQ

Landscapes

  • Element Separation (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW094112882A 2004-05-25 2005-04-22 Semiconductor device and manufacturing method thereof TWI282141B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004154226A JP2005340327A (ja) 2004-05-25 2004-05-25 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
TW200605264A TW200605264A (en) 2006-02-01
TWI282141B true TWI282141B (en) 2007-06-01

Family

ID=35446761

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094112882A TWI282141B (en) 2004-05-25 2005-04-22 Semiconductor device and manufacturing method thereof

Country Status (5)

Country Link
US (1) US7279769B2 (https=)
JP (1) JP2005340327A (https=)
KR (1) KR100732647B1 (https=)
CN (1) CN100461414C (https=)
TW (1) TWI282141B (https=)

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JP5195747B2 (ja) * 2007-03-27 2013-05-15 富士通セミコンダクター株式会社 半導体装置の製造方法
JP5525695B2 (ja) * 2007-06-20 2014-06-18 株式会社東芝 半導体装置およびその製造方法
US20110316117A1 (en) * 2007-08-14 2011-12-29 Agency For Science, Technology And Research Die package and a method for manufacturing the die package
US7871895B2 (en) * 2008-02-19 2011-01-18 International Business Machines Corporation Method and structure for relieving transistor performance degradation due to shallow trench isolation induced stress
JPWO2010073947A1 (ja) * 2008-12-25 2012-06-14 国立大学法人東北大学 半導体装置及びその製造方法
JPWO2011138906A1 (ja) * 2010-05-07 2013-07-22 国立大学法人東北大学 半導体装置の製造方法
JP2012009791A (ja) * 2010-06-28 2012-01-12 Panasonic Corp 固体撮像装置及びその製造方法
JP5405437B2 (ja) 2010-11-05 2014-02-05 ＡｚエレクトロニックマテリアルズＩｐ株式会社 アイソレーション構造の形成方法
JP2012134302A (ja) * 2010-12-21 2012-07-12 Jsr Corp トレンチ埋め込み方法、及びトレンチ埋め込み用組成物
JP2013074169A (ja) * 2011-09-28 2013-04-22 Kyocera Corp 薄膜配線基板
CN105493254B (zh) 2013-09-26 2020-12-29 英特尔公司 Nmos结构中形成位错增强的应变的方法
US10204982B2 (en) * 2013-10-08 2019-02-12 Stmicroelectronics, Inc. Semiconductor device with relaxation reduction liner and associated methods
FR3024587B1 (fr) * 2014-08-01 2018-01-26 Soitec Procede de fabrication d'une structure hautement resistive
US10822692B2 (en) * 2016-08-12 2020-11-03 University Of North Texas Binary Ag—Cu amorphous thin-films for electronic applications
KR102549340B1 (ko) * 2016-09-27 2023-06-28 삼성전자주식회사 반도체 장치 및 이의 제조 방법
CN110880473B (zh) * 2018-09-06 2025-02-25 长鑫存储技术有限公司 半导体器件、半导体器件制造方法

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CN100370587C (zh) * 2002-09-06 2008-02-20 旭硝子株式会社 绝缘膜研磨剂组合物及半导体集成电路的制造方法

Also Published As

Publication number Publication date
CN100461414C (zh) 2009-02-11
CN1716607A (zh) 2006-01-04
US20050269662A1 (en) 2005-12-08
KR20060048071A (ko) 2006-05-18
KR100732647B1 (ko) 2007-06-27
JP2005340327A (ja) 2005-12-08
US7279769B2 (en) 2007-10-09
TW200605264A (en) 2006-02-01

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