KR100703971B1 - 반도체 집적 회로 장치 및 그 제조 방법 - Google Patents

반도체 집적 회로 장치 및 그 제조 방법 Download PDF

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Publication number
KR100703971B1
KR100703971B1 KR1020050049016A KR20050049016A KR100703971B1 KR 100703971 B1 KR100703971 B1 KR 100703971B1 KR 1020050049016 A KR1020050049016 A KR 1020050049016A KR 20050049016 A KR20050049016 A KR 20050049016A KR 100703971 B1 KR100703971 B1 KR 100703971B1
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South Korea
Prior art keywords
film
semiconductor substrate
insulating film
integrated circuit
forming
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020050049016A
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English (en)
Korean (ko)
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KR20060127687A (ko
Inventor
장동열
이태정
김성환
이수철
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삼성전자주식회사
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Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020050049016A priority Critical patent/KR100703971B1/ko
Priority to US11/429,370 priority patent/US7304387B2/en
Priority to DE102006024654A priority patent/DE102006024654A1/de
Priority to JP2006156332A priority patent/JP2006344956A/ja
Priority to CN2006100916013A priority patent/CN1877834B/zh
Priority to TW095120308A priority patent/TWI302377B/zh
Publication of KR20060127687A publication Critical patent/KR20060127687A/ko
Application granted granted Critical
Publication of KR100703971B1 publication Critical patent/KR100703971B1/ko
Priority to US11/977,039 priority patent/US8058185B2/en
Priority to US13/272,675 priority patent/US20120032269A1/en
Priority to JP2013037641A priority patent/JP2013145901A/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/20—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0181—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0186—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0188—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/47—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising two or more dielectric layers having different properties, e.g. different dielectric constants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020050049016A 2005-06-08 2005-06-08 반도체 집적 회로 장치 및 그 제조 방법 Expired - Fee Related KR100703971B1 (ko)

Priority Applications (9)

Application Number Priority Date Filing Date Title
KR1020050049016A KR100703971B1 (ko) 2005-06-08 2005-06-08 반도체 집적 회로 장치 및 그 제조 방법
US11/429,370 US7304387B2 (en) 2005-06-08 2006-05-05 Semiconductor integrated circuit device
DE102006024654A DE102006024654A1 (de) 2005-06-08 2006-05-22 Integriertes Halbleiterschaltkreisbauelement und Verfahren zur Herstellung desselben
JP2006156332A JP2006344956A (ja) 2005-06-08 2006-06-05 半導体集積回路装置及びそれの製造方法
CN2006100916013A CN1877834B (zh) 2005-06-08 2006-06-06 半导体集成电路器件及其制造方法
TW095120308A TWI302377B (en) 2005-06-08 2006-06-08 Semiconductor integrated circuit device and method for fabricating the same
US11/977,039 US8058185B2 (en) 2005-06-08 2007-10-23 Method of fabricating semiconductor integrated circuit device
US13/272,675 US20120032269A1 (en) 2005-06-08 2011-10-13 Semiconductor integrated circuit device and method for fabricating the same
JP2013037641A JP2013145901A (ja) 2005-06-08 2013-02-27 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050049016A KR100703971B1 (ko) 2005-06-08 2005-06-08 반도체 집적 회로 장치 및 그 제조 방법

Publications (2)

Publication Number Publication Date
KR20060127687A KR20060127687A (ko) 2006-12-13
KR100703971B1 true KR100703971B1 (ko) 2007-04-06

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KR1020050049016A Expired - Fee Related KR100703971B1 (ko) 2005-06-08 2005-06-08 반도체 집적 회로 장치 및 그 제조 방법

Country Status (6)

Country Link
US (3) US7304387B2 (https=)
JP (2) JP2006344956A (https=)
KR (1) KR100703971B1 (https=)
CN (1) CN1877834B (https=)
DE (1) DE102006024654A1 (https=)
TW (1) TWI302377B (https=)

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US20080173985A1 (en) * 2007-01-24 2008-07-24 International Business Machines Corporation Dielectric cap having material with optical band gap to substantially block uv radiation during curing treatment, and related methods
KR100878402B1 (ko) * 2007-07-25 2009-01-13 삼성전기주식회사 다층 배선을 구비한 반도체 장치 및 그 형성 방법
KR100922560B1 (ko) * 2007-09-28 2009-10-21 주식회사 동부하이텍 플래시 메모리 소자 및 그의 제조 방법
US9184097B2 (en) * 2009-03-12 2015-11-10 System General Corporation Semiconductor devices and formation methods thereof
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CN102376754A (zh) * 2010-08-19 2012-03-14 中芯国际集成电路制造(上海)有限公司 半导体器件结构及制作该半导体器件结构的方法
US20120261767A1 (en) * 2011-04-14 2012-10-18 Intersil Americas Inc. Method and structure for reducing gate leakage current and positive bias temperature instability drift
CN103021999B (zh) * 2011-09-27 2015-06-03 中芯国际集成电路制造(上海)有限公司 半导体结构及其制作方法
US8785997B2 (en) * 2012-05-16 2014-07-22 Infineon Technologies Ag Semiconductor device including a silicate glass structure and method of manufacturing a semiconductor device
JP2014165191A (ja) 2013-02-21 2014-09-08 Seiko Instruments Inc 紫外線消去型の不揮発性半導体装置
CN104425542B (zh) * 2013-08-26 2017-08-04 昆山工研院新型平板显示技术中心有限公司 一种有机发光显示装置及其制备方法
CA2932901A1 (en) * 2014-02-26 2015-09-03 Halliburton Energy Services, Inc. Protein-based fibrous bridging material and process and system for treating a wellbore
CN105374740B (zh) * 2014-08-29 2018-10-23 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法、电子装置
JP2016162848A (ja) * 2015-02-27 2016-09-05 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR102258112B1 (ko) * 2015-04-01 2021-05-31 삼성전자주식회사 반도체 소자 및 이의 제조 방법
WO2017111847A1 (en) * 2015-12-24 2017-06-29 Intel Corporation Techniques for forming electrically conductive features with improved alignment and capacitance reduction
CN110021559B (zh) * 2018-01-09 2021-08-24 联华电子股份有限公司 半导体元件及其制作方法
US10916498B2 (en) * 2018-03-28 2021-02-09 Taiwan Semiconductor Manufacturing Co., Ltd. Interconnect structure for logic circuit
JP7719608B2 (ja) * 2021-02-08 2025-08-06 ローム株式会社 半導体素子、当該半導体素子を備えた半導体装置、および、半導体素子の製造方法

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Also Published As

Publication number Publication date
US20080057689A1 (en) 2008-03-06
US7304387B2 (en) 2007-12-04
CN1877834B (zh) 2010-09-29
US20060278949A1 (en) 2006-12-14
US8058185B2 (en) 2011-11-15
JP2006344956A (ja) 2006-12-21
KR20060127687A (ko) 2006-12-13
US20120032269A1 (en) 2012-02-09
TW200721451A (en) 2007-06-01
JP2013145901A (ja) 2013-07-25
DE102006024654A1 (de) 2007-02-01
TWI302377B (en) 2008-10-21
CN1877834A (zh) 2006-12-13

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