KR100629295B1 - 기억 수단을 갖는 메모리 - Google Patents

기억 수단을 갖는 메모리 Download PDF

Info

Publication number
KR100629295B1
KR100629295B1 KR1020030017086A KR20030017086A KR100629295B1 KR 100629295 B1 KR100629295 B1 KR 100629295B1 KR 1020030017086 A KR1020030017086 A KR 1020030017086A KR 20030017086 A KR20030017086 A KR 20030017086A KR 100629295 B1 KR100629295 B1 KR 100629295B1
Authority
KR
South Korea
Prior art keywords
storage means
data
voltage pulse
bit line
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020030017086A
Other languages
English (en)
Korean (ko)
Other versions
KR20030076377A (ko
Inventor
사까이나오후미
Original Assignee
산요덴키가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 산요덴키가부시키가이샤 filed Critical 산요덴키가부시키가이샤
Publication of KR20030076377A publication Critical patent/KR20030076377A/ko
Application granted granted Critical
Publication of KR100629295B1 publication Critical patent/KR100629295B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
KR1020030017086A 2002-03-20 2003-03-19 기억 수단을 갖는 메모리 Expired - Fee Related KR100629295B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2002077430 2002-03-20
JPJP-P-2002-00077430 2002-03-20
JPJP-P-2002-00136411 2002-05-13
JP2002136411 2002-05-13
JPJP-P-2003-00057179 2003-03-04
JP2003057179A JP4024166B2 (ja) 2002-03-20 2003-03-04 強誘電体メモリ

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020050040560A Division KR20050052662A (ko) 2002-03-20 2005-05-16 기억 수단을 갖는 메모리

Publications (2)

Publication Number Publication Date
KR20030076377A KR20030076377A (ko) 2003-09-26
KR100629295B1 true KR100629295B1 (ko) 2006-09-28

Family

ID=28046101

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020030017086A Expired - Fee Related KR100629295B1 (ko) 2002-03-20 2003-03-19 기억 수단을 갖는 메모리
KR1020050040560A Ceased KR20050052662A (ko) 2002-03-20 2005-05-16 기억 수단을 갖는 메모리

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020050040560A Ceased KR20050052662A (ko) 2002-03-20 2005-05-16 기억 수단을 갖는 메모리

Country Status (4)

Country Link
US (2) US6795351B2 (enExample)
JP (1) JP4024166B2 (enExample)
KR (2) KR100629295B1 (enExample)
CN (1) CN100419910C (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4024166B2 (ja) * 2002-03-20 2007-12-19 三洋電機株式会社 強誘電体メモリ
JP2004220705A (ja) * 2003-01-15 2004-08-05 Seiko Epson Corp 強誘電体記憶装置
JP4285082B2 (ja) * 2003-05-27 2009-06-24 ソニー株式会社 記憶装置
JP4024196B2 (ja) * 2003-09-30 2007-12-19 三洋電機株式会社 強誘電体メモリ
JP4639049B2 (ja) * 2004-01-14 2011-02-23 パトレネラ キャピタル リミテッド， エルエルシー メモリ
NO320149B1 (no) * 2004-02-13 2005-10-31 Thin Film Electronics Asa Fremgangsmate for a drive en ferroelektrisk eller elektret minneinnretning
US7133304B2 (en) * 2004-03-22 2006-11-07 Texas Instruments Incorporated Method and apparatus to reduce storage node disturbance in ferroelectric memory
US7652908B2 (en) 2004-06-23 2010-01-26 Hideaki Miyamoto Ferroelectric memory having a refresh control circuit capable of recovering residual polarization of unselected memory cells
JP4427464B2 (ja) * 2005-02-02 2010-03-10 シャープ株式会社 不揮発性半導体記憶装置及びその動作方法
JP2007123528A (ja) * 2005-10-27 2007-05-17 Sanyo Electric Co Ltd メモリ
JP4714590B2 (ja) 2006-01-23 2011-06-29 パトレネラ キャピタル リミテッド， エルエルシー メモリ
JP4718354B2 (ja) * 2006-03-27 2011-07-06 パトレネラ キャピタル リミテッド， エルエルシー メモリ
JP4375572B2 (ja) * 2006-10-02 2009-12-02 セイコーエプソン株式会社 半導体記憶装置、データ記録装置、半導体記憶装置の制御方法
JP2008153479A (ja) * 2006-12-19 2008-07-03 Rohm Co Ltd 強誘電体電界効果トランジスタを備える半導体装置及びこれを用いた半導体集積回路装置
US8743591B2 (en) * 2011-04-26 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for driving the same
CN106575524B (zh) * 2014-08-14 2020-10-23 瑞萨电子株式会社 半导体器件
US9613676B1 (en) * 2016-06-29 2017-04-04 Micron Technology, Inc. Writing to cross-point non-volatile memory
KR102800875B1 (ko) 2016-11-25 2025-04-28 삼성전자주식회사 리클레임 제어부를 갖는 메모리 콘트롤러 및 그에 따른 동작 제어 방법
US10867653B2 (en) * 2018-04-20 2020-12-15 Micron Technology, Inc. Access schemes for protecting stored data in a memory device
US10622050B2 (en) 2018-05-09 2020-04-14 Micron Technology, Inc. Ferroelectric memory plate power reduction
US11915736B2 (en) * 2021-11-04 2024-02-27 Taiwan Semiconductor Manufacturing Company, Ltd. Ferroelectric memory operation bias and power domains

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0677434A (ja) 1992-08-27 1994-03-18 Hitachi Ltd 半導体記憶装置
JP3710507B2 (ja) * 1994-01-18 2005-10-26 ローム株式会社 不揮発性メモリ
JPH08218215A (ja) 1995-02-13 1996-08-27 Midori Anzen Co Ltd ヘルメットにおける耳紐の固定部
US5532953A (en) * 1995-03-29 1996-07-02 Ramtron International Corporation Ferroelectric memory sensing method using distinct read and write voltages
DE69630758T2 (de) * 1995-09-08 2004-05-27 Fujitsu Ltd., Kawasaki Ferroelektrischer Speicher und Datenleseverfahren von diesem Speicher
JP3327071B2 (ja) 1995-10-16 2002-09-24 ソニー株式会社 強誘電体記憶装置
JP2838196B2 (ja) 1996-08-20 1998-12-16 東京工業大学長 単一トランジスタ型強誘電体メモリへのデータ書込み方法
JPH10162587A (ja) 1996-11-26 1998-06-19 Hitachi Ltd 強誘電体メモリ
KR100234877B1 (ko) * 1997-01-13 1999-12-15 윤종용 강유전체 랜덤 억세스 반도체 메모리 장치 및 그 동작 방법
CN1845251B (zh) * 1997-11-14 2010-05-26 罗姆股份有限公司 半导体存储器及半导体存储器的存取方法
JP3805132B2 (ja) 1999-03-31 2006-08-02 株式会社東芝 マイコン搭載機器のマイコン待機状態時の消費電流削減回路
JP2002353419A (ja) * 2000-12-27 2002-12-06 Seiko Epson Corp 強誘電体メモリ装置
JP4552070B2 (ja) 2001-03-27 2010-09-29 三菱化学株式会社 高吸水性樹脂の製造方法
JP4024166B2 (ja) * 2002-03-20 2007-12-19 三洋電機株式会社 強誘電体メモリ
JP4214708B2 (ja) * 2002-03-27 2009-01-28 セイコーエプソン株式会社 強誘電体記憶装置及びその駆動方法
JP2004178734A (ja) * 2002-11-28 2004-06-24 Sanyo Electric Co Ltd メモリ装置
JP2004220705A (ja) * 2003-01-15 2004-08-05 Seiko Epson Corp 強誘電体記憶装置
CN1527321B (zh) * 2003-03-07 2011-05-11 帕特尼拉资本有限责任公司 存储器
JP4639049B2 (ja) * 2004-01-14 2011-02-23 パトレネラ キャピタル リミテッド， エルエルシー メモリ
US7133304B2 (en) * 2004-03-22 2006-11-07 Texas Instruments Incorporated Method and apparatus to reduce storage node disturbance in ferroelectric memory

Also Published As

Publication number Publication date
US20030179610A1 (en) 2003-09-25
CN100419910C (zh) 2008-09-17
CN1452179A (zh) 2003-10-29
KR20030076377A (ko) 2003-09-26
US20070217279A1 (en) 2007-09-20
US7411841B2 (en) 2008-08-12
JP2004047045A (ja) 2004-02-12
KR20050052662A (ko) 2005-06-03
US6795351B2 (en) 2004-09-21
JP4024166B2 (ja) 2007-12-19

Similar Documents

Publication Publication Date Title
KR100629295B1 (ko) 기억 수단을 갖는 메모리
JP4753873B2 (ja) メモリ
KR950009387B1 (ko) 반도체 기억 장치
US6982918B2 (en) Data storage device and refreshing method for use with such device
JP3856424B2 (ja) 半導体記憶装置
JP2953316B2 (ja) 不揮発性強誘電体メモリ
KR100351594B1 (ko) 강유전체 메모리 및 반도체 메모리
KR100675246B1 (ko) 메모리
JP4024196B2 (ja) 強誘電体メモリ
KR20030077459A (ko) 반도체 기억장치 및 그 구동방법
JP2003007051A (ja) メモリおよびその動作方法
US7110279B2 (en) Memory
JP3597163B2 (ja) 強誘電体メモリセルの読み出し方法および読み出し回路
JP4024289B2 (ja) 強誘電体メモリ
JP4024220B2 (ja) 強誘電体メモリ
JP2001110192A (ja) 不揮発性メモリおよびその駆動方法
JP2004178734A (ja) メモリ装置
KR100363104B1 (ko) 강유전체 기억소자의 셀 구조

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

A107 Divisional application of patent
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0107 Divisional application

St.27 status event code: A-0-1-A10-A18-div-PA0107

St.27 status event code: A-0-1-A10-A16-div-PA0107

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

FPAY Annual fee payment

Payment date: 20110830

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20120922

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20120922

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000