JP4024166B2 - 強誘電体メモリ - Google Patents

強誘電体メモリ Download PDF

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Publication number
JP4024166B2
JP4024166B2 JP2003057179A JP2003057179A JP4024166B2 JP 4024166 B2 JP4024166 B2 JP 4024166B2 JP 2003057179 A JP2003057179 A JP 2003057179A JP 2003057179 A JP2003057179 A JP 2003057179A JP 4024166 B2 JP4024166 B2 JP 4024166B2
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JP
Japan
Prior art keywords
data
cell
read
memory
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003057179A
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English (en)
Japanese (ja)
Other versions
JP2004047045A5 (enExample
JP2004047045A (ja
Inventor
直史 境
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP2003057179A priority Critical patent/JP4024166B2/ja
Priority to KR1020030017086A priority patent/KR100629295B1/ko
Priority to US10/390,649 priority patent/US6795351B2/en
Priority to CNB031107990A priority patent/CN100419910C/zh
Publication of JP2004047045A publication Critical patent/JP2004047045A/ja
Priority to US10/874,168 priority patent/US7411841B2/en
Priority to KR1020050040560A priority patent/KR20050052662A/ko
Publication of JP2004047045A5 publication Critical patent/JP2004047045A5/ja
Application granted granted Critical
Publication of JP4024166B2 publication Critical patent/JP4024166B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
JP2003057179A 2002-03-20 2003-03-04 強誘電体メモリ Expired - Fee Related JP4024166B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2003057179A JP4024166B2 (ja) 2002-03-20 2003-03-04 強誘電体メモリ
KR1020030017086A KR100629295B1 (ko) 2002-03-20 2003-03-19 기억 수단을 갖는 메모리
US10/390,649 US6795351B2 (en) 2002-03-20 2003-03-19 Memory having storage means
CNB031107990A CN100419910C (zh) 2002-03-20 2003-03-20 存储器
US10/874,168 US7411841B2 (en) 2002-03-20 2004-06-24 Memory having storage means
KR1020050040560A KR20050052662A (ko) 2002-03-20 2005-05-16 기억 수단을 갖는 메모리

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002077430 2002-03-20
JP2002136411 2002-05-13
JP2003057179A JP4024166B2 (ja) 2002-03-20 2003-03-04 強誘電体メモリ

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007085997A Division JP4024289B2 (ja) 2002-03-20 2007-03-28 強誘電体メモリ

Publications (3)

Publication Number Publication Date
JP2004047045A JP2004047045A (ja) 2004-02-12
JP2004047045A5 JP2004047045A5 (enExample) 2005-09-02
JP4024166B2 true JP4024166B2 (ja) 2007-12-19

Family

ID=28046101

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003057179A Expired - Fee Related JP4024166B2 (ja) 2002-03-20 2003-03-04 強誘電体メモリ

Country Status (4)

Country Link
US (2) US6795351B2 (enExample)
JP (1) JP4024166B2 (enExample)
KR (2) KR100629295B1 (enExample)
CN (1) CN100419910C (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4024166B2 (ja) * 2002-03-20 2007-12-19 三洋電機株式会社 強誘電体メモリ
JP2004220705A (ja) * 2003-01-15 2004-08-05 Seiko Epson Corp 強誘電体記憶装置
JP4285082B2 (ja) * 2003-05-27 2009-06-24 ソニー株式会社 記憶装置
JP4024196B2 (ja) * 2003-09-30 2007-12-19 三洋電機株式会社 強誘電体メモリ
JP4639049B2 (ja) * 2004-01-14 2011-02-23 パトレネラ キャピタル リミテッド， エルエルシー メモリ
NO320149B1 (no) * 2004-02-13 2005-10-31 Thin Film Electronics Asa Fremgangsmate for a drive en ferroelektrisk eller elektret minneinnretning
US7133304B2 (en) * 2004-03-22 2006-11-07 Texas Instruments Incorporated Method and apparatus to reduce storage node disturbance in ferroelectric memory
US7652908B2 (en) 2004-06-23 2010-01-26 Hideaki Miyamoto Ferroelectric memory having a refresh control circuit capable of recovering residual polarization of unselected memory cells
JP4427464B2 (ja) * 2005-02-02 2010-03-10 シャープ株式会社 不揮発性半導体記憶装置及びその動作方法
JP2007123528A (ja) * 2005-10-27 2007-05-17 Sanyo Electric Co Ltd メモリ
JP4714590B2 (ja) 2006-01-23 2011-06-29 パトレネラ キャピタル リミテッド， エルエルシー メモリ
JP4718354B2 (ja) * 2006-03-27 2011-07-06 パトレネラ キャピタル リミテッド， エルエルシー メモリ
JP4375572B2 (ja) * 2006-10-02 2009-12-02 セイコーエプソン株式会社 半導体記憶装置、データ記録装置、半導体記憶装置の制御方法
JP2008153479A (ja) * 2006-12-19 2008-07-03 Rohm Co Ltd 強誘電体電界効果トランジスタを備える半導体装置及びこれを用いた半導体集積回路装置
US8743591B2 (en) * 2011-04-26 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for driving the same
CN106575524B (zh) * 2014-08-14 2020-10-23 瑞萨电子株式会社 半导体器件
US9613676B1 (en) * 2016-06-29 2017-04-04 Micron Technology, Inc. Writing to cross-point non-volatile memory
KR102800875B1 (ko) 2016-11-25 2025-04-28 삼성전자주식회사 리클레임 제어부를 갖는 메모리 콘트롤러 및 그에 따른 동작 제어 방법
US10867653B2 (en) * 2018-04-20 2020-12-15 Micron Technology, Inc. Access schemes for protecting stored data in a memory device
US10622050B2 (en) 2018-05-09 2020-04-14 Micron Technology, Inc. Ferroelectric memory plate power reduction
US11915736B2 (en) * 2021-11-04 2024-02-27 Taiwan Semiconductor Manufacturing Company, Ltd. Ferroelectric memory operation bias and power domains

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0677434A (ja) 1992-08-27 1994-03-18 Hitachi Ltd 半導体記憶装置
JP3710507B2 (ja) * 1994-01-18 2005-10-26 ローム株式会社 不揮発性メモリ
JPH08218215A (ja) 1995-02-13 1996-08-27 Midori Anzen Co Ltd ヘルメットにおける耳紐の固定部
US5532953A (en) * 1995-03-29 1996-07-02 Ramtron International Corporation Ferroelectric memory sensing method using distinct read and write voltages
DE69630758T2 (de) * 1995-09-08 2004-05-27 Fujitsu Ltd., Kawasaki Ferroelektrischer Speicher und Datenleseverfahren von diesem Speicher
JP3327071B2 (ja) 1995-10-16 2002-09-24 ソニー株式会社 強誘電体記憶装置
JP2838196B2 (ja) 1996-08-20 1998-12-16 東京工業大学長 単一トランジスタ型強誘電体メモリへのデータ書込み方法
JPH10162587A (ja) 1996-11-26 1998-06-19 Hitachi Ltd 強誘電体メモリ
KR100234877B1 (ko) * 1997-01-13 1999-12-15 윤종용 강유전체 랜덤 억세스 반도체 메모리 장치 및 그 동작 방법
CN1845251B (zh) * 1997-11-14 2010-05-26 罗姆股份有限公司 半导体存储器及半导体存储器的存取方法
JP3805132B2 (ja) 1999-03-31 2006-08-02 株式会社東芝 マイコン搭載機器のマイコン待機状態時の消費電流削減回路
JP2002353419A (ja) * 2000-12-27 2002-12-06 Seiko Epson Corp 強誘電体メモリ装置
JP4552070B2 (ja) 2001-03-27 2010-09-29 三菱化学株式会社 高吸水性樹脂の製造方法
JP4024166B2 (ja) * 2002-03-20 2007-12-19 三洋電機株式会社 強誘電体メモリ
JP4214708B2 (ja) * 2002-03-27 2009-01-28 セイコーエプソン株式会社 強誘電体記憶装置及びその駆動方法
JP2004178734A (ja) * 2002-11-28 2004-06-24 Sanyo Electric Co Ltd メモリ装置
JP2004220705A (ja) * 2003-01-15 2004-08-05 Seiko Epson Corp 強誘電体記憶装置
CN1527321B (zh) * 2003-03-07 2011-05-11 帕特尼拉资本有限责任公司 存储器
JP4639049B2 (ja) * 2004-01-14 2011-02-23 パトレネラ キャピタル リミテッド， エルエルシー メモリ
US7133304B2 (en) * 2004-03-22 2006-11-07 Texas Instruments Incorporated Method and apparatus to reduce storage node disturbance in ferroelectric memory

Also Published As

Publication number Publication date
US20030179610A1 (en) 2003-09-25
CN100419910C (zh) 2008-09-17
CN1452179A (zh) 2003-10-29
KR20030076377A (ko) 2003-09-26
US20070217279A1 (en) 2007-09-20
US7411841B2 (en) 2008-08-12
JP2004047045A (ja) 2004-02-12
KR100629295B1 (ko) 2006-09-28
KR20050052662A (ko) 2005-06-03
US6795351B2 (en) 2004-09-21

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