CN100419910C - 存储器 - Google Patents

存储器 Download PDF

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Publication number
CN100419910C
CN100419910C CNB031107990A CN03110799A CN100419910C CN 100419910 C CN100419910 C CN 100419910C CN B031107990 A CNB031107990 A CN B031107990A CN 03110799 A CN03110799 A CN 03110799A CN 100419910 C CN100419910 C CN 100419910C
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CN
China
Prior art keywords
mentioned
storage unit
data
selection
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB031107990A
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English (en)
Chinese (zh)
Other versions
CN1452179A (zh
Inventor
境直史
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OL Security LLC
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Publication of CN1452179A publication Critical patent/CN1452179A/zh
Application granted granted Critical
Publication of CN100419910C publication Critical patent/CN100419910C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
CNB031107990A 2002-03-20 2003-03-20 存储器 Expired - Fee Related CN100419910C (zh)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP2002077430 2002-03-20
JP200277430 2002-03-20
JP2002-77430 2002-03-20
JP2002-136411 2002-05-13
JP2002136411 2002-05-13
JP2002136411 2002-05-13
JP200357179 2003-03-04
JP2003057179A JP4024166B2 (ja) 2002-03-20 2003-03-04 強誘電体メモリ
JP2003-57179 2003-03-04

Publications (2)

Publication Number Publication Date
CN1452179A CN1452179A (zh) 2003-10-29
CN100419910C true CN100419910C (zh) 2008-09-17

Family

ID=28046101

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB031107990A Expired - Fee Related CN100419910C (zh) 2002-03-20 2003-03-20 存储器

Country Status (4)

Country Link
US (2) US6795351B2 (enExample)
JP (1) JP4024166B2 (enExample)
KR (2) KR100629295B1 (enExample)
CN (1) CN100419910C (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4024166B2 (ja) * 2002-03-20 2007-12-19 三洋電機株式会社 強誘電体メモリ
JP2004220705A (ja) * 2003-01-15 2004-08-05 Seiko Epson Corp 強誘電体記憶装置
JP4285082B2 (ja) * 2003-05-27 2009-06-24 ソニー株式会社 記憶装置
JP4024196B2 (ja) * 2003-09-30 2007-12-19 三洋電機株式会社 強誘電体メモリ
JP4639049B2 (ja) * 2004-01-14 2011-02-23 パトレネラ キャピタル リミテッド， エルエルシー メモリ
NO320149B1 (no) * 2004-02-13 2005-10-31 Thin Film Electronics Asa Fremgangsmate for a drive en ferroelektrisk eller elektret minneinnretning
US7133304B2 (en) * 2004-03-22 2006-11-07 Texas Instruments Incorporated Method and apparatus to reduce storage node disturbance in ferroelectric memory
US7652908B2 (en) 2004-06-23 2010-01-26 Hideaki Miyamoto Ferroelectric memory having a refresh control circuit capable of recovering residual polarization of unselected memory cells
JP4427464B2 (ja) * 2005-02-02 2010-03-10 シャープ株式会社 不揮発性半導体記憶装置及びその動作方法
JP2007123528A (ja) * 2005-10-27 2007-05-17 Sanyo Electric Co Ltd メモリ
JP4714590B2 (ja) 2006-01-23 2011-06-29 パトレネラ キャピタル リミテッド， エルエルシー メモリ
JP4718354B2 (ja) * 2006-03-27 2011-07-06 パトレネラ キャピタル リミテッド， エルエルシー メモリ
JP4375572B2 (ja) * 2006-10-02 2009-12-02 セイコーエプソン株式会社 半導体記憶装置、データ記録装置、半導体記憶装置の制御方法
JP2008153479A (ja) * 2006-12-19 2008-07-03 Rohm Co Ltd 強誘電体電界効果トランジスタを備える半導体装置及びこれを用いた半導体集積回路装置
US8743591B2 (en) * 2011-04-26 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for driving the same
CN106575524B (zh) * 2014-08-14 2020-10-23 瑞萨电子株式会社 半导体器件
US9613676B1 (en) * 2016-06-29 2017-04-04 Micron Technology, Inc. Writing to cross-point non-volatile memory
KR102800875B1 (ko) 2016-11-25 2025-04-28 삼성전자주식회사 리클레임 제어부를 갖는 메모리 콘트롤러 및 그에 따른 동작 제어 방법
US10867653B2 (en) * 2018-04-20 2020-12-15 Micron Technology, Inc. Access schemes for protecting stored data in a memory device
US10622050B2 (en) 2018-05-09 2020-04-14 Micron Technology, Inc. Ferroelectric memory plate power reduction
US11915736B2 (en) * 2021-11-04 2024-02-27 Taiwan Semiconductor Manufacturing Company, Ltd. Ferroelectric memory operation bias and power domains

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5532953A (en) * 1995-03-29 1996-07-02 Ramtron International Corporation Ferroelectric memory sensing method using distinct read and write voltages
US5541871A (en) * 1994-01-18 1996-07-30 Rohm Co., Ltd. Nonvolatile ferroelectric-semiconductor memory
JPH1064255A (ja) * 1996-08-20 1998-03-06 Tokyo Inst Of Technol 単一トランジスタ型強誘電体メモリへのデータ書込み方法
US6088257A (en) * 1997-01-13 2000-07-11 Samsung Electronics, Co., Ltd. Ferroelectric random access memory device and method for operating the same

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0677434A (ja) 1992-08-27 1994-03-18 Hitachi Ltd 半導体記憶装置
JPH08218215A (ja) 1995-02-13 1996-08-27 Midori Anzen Co Ltd ヘルメットにおける耳紐の固定部
DE69630758T2 (de) * 1995-09-08 2004-05-27 Fujitsu Ltd., Kawasaki Ferroelektrischer Speicher und Datenleseverfahren von diesem Speicher
JP3327071B2 (ja) 1995-10-16 2002-09-24 ソニー株式会社 強誘電体記憶装置
JPH10162587A (ja) 1996-11-26 1998-06-19 Hitachi Ltd 強誘電体メモリ
CN1845251B (zh) * 1997-11-14 2010-05-26 罗姆股份有限公司 半导体存储器及半导体存储器的存取方法
JP3805132B2 (ja) 1999-03-31 2006-08-02 株式会社東芝 マイコン搭載機器のマイコン待機状態時の消費電流削減回路
JP2002353419A (ja) * 2000-12-27 2002-12-06 Seiko Epson Corp 強誘電体メモリ装置
JP4552070B2 (ja) 2001-03-27 2010-09-29 三菱化学株式会社 高吸水性樹脂の製造方法
JP4024166B2 (ja) * 2002-03-20 2007-12-19 三洋電機株式会社 強誘電体メモリ
JP4214708B2 (ja) * 2002-03-27 2009-01-28 セイコーエプソン株式会社 強誘電体記憶装置及びその駆動方法
JP2004178734A (ja) * 2002-11-28 2004-06-24 Sanyo Electric Co Ltd メモリ装置
JP2004220705A (ja) * 2003-01-15 2004-08-05 Seiko Epson Corp 強誘電体記憶装置
CN1527321B (zh) * 2003-03-07 2011-05-11 帕特尼拉资本有限责任公司 存储器
JP4639049B2 (ja) * 2004-01-14 2011-02-23 パトレネラ キャピタル リミテッド， エルエルシー メモリ
US7133304B2 (en) * 2004-03-22 2006-11-07 Texas Instruments Incorporated Method and apparatus to reduce storage node disturbance in ferroelectric memory

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5541871A (en) * 1994-01-18 1996-07-30 Rohm Co., Ltd. Nonvolatile ferroelectric-semiconductor memory
US5532953A (en) * 1995-03-29 1996-07-02 Ramtron International Corporation Ferroelectric memory sensing method using distinct read and write voltages
JPH1064255A (ja) * 1996-08-20 1998-03-06 Tokyo Inst Of Technol 単一トランジスタ型強誘電体メモリへのデータ書込み方法
US6088257A (en) * 1997-01-13 2000-07-11 Samsung Electronics, Co., Ltd. Ferroelectric random access memory device and method for operating the same

Also Published As

Publication number Publication date
US20030179610A1 (en) 2003-09-25
CN1452179A (zh) 2003-10-29
KR20030076377A (ko) 2003-09-26
US20070217279A1 (en) 2007-09-20
US7411841B2 (en) 2008-08-12
JP2004047045A (ja) 2004-02-12
KR100629295B1 (ko) 2006-09-28
KR20050052662A (ko) 2005-06-03
US6795351B2 (en) 2004-09-21
JP4024166B2 (ja) 2007-12-19

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: PATE LANNILA FORTUNE CO., LTD.

Free format text: FORMER OWNER: SANYO ELECTRIC CO., LTD.

Effective date: 20101223

C41 Transfer of patent application or patent right or utility model
COR Change of bibliographic data

Free format text: CORRECT: ADDRESS; FROM: OSAKA PREFECTURE, JAPAN TO: DELAWARE, USA

TR01 Transfer of patent right

Effective date of registration: 20101223

Address after: Delaware

Patentee after: Patrenella Capital Ltd.,LLC

Address before: Osaka Japan

Patentee before: Sanyo Electric Co.,Ltd.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20080917