KR100611152B1 - 평판표시장치 - Google Patents

평판표시장치 Download PDF

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Publication number
KR100611152B1
KR100611152B1 KR1020030084786A KR20030084786A KR100611152B1 KR 100611152 B1 KR100611152 B1 KR 100611152B1 KR 1020030084786 A KR1020030084786 A KR 1020030084786A KR 20030084786 A KR20030084786 A KR 20030084786A KR 100611152 B1 KR100611152 B1 KR 100611152B1
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KR
South Korea
Prior art keywords
electrode
layer
source
thin film
taper angle
Prior art date
Application number
KR1020030084786A
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English (en)
Korean (ko)
Other versions
KR20050051076A (ko
Inventor
김무현
송명원
조유성
Original Assignee
삼성에스디아이 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 삼성에스디아이 주식회사 filed Critical 삼성에스디아이 주식회사
Priority to KR1020030084786A priority Critical patent/KR100611152B1/ko
Priority to US10/938,080 priority patent/US7656087B2/en
Priority to CNB2004100118029A priority patent/CN100423284C/zh
Priority to EP04090473A priority patent/EP1536465B1/en
Priority to DE602004021894T priority patent/DE602004021894D1/de
Priority to AT04090473T priority patent/ATE436090T1/de
Priority to JP2004344946A priority patent/JP4879478B2/ja
Publication of KR20050051076A publication Critical patent/KR20050051076A/ko
Application granted granted Critical
Publication of KR100611152B1 publication Critical patent/KR100611152B1/ko
Priority to US12/234,554 priority patent/US7936125B2/en

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76804—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics by forming tapered via holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/813—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80515—Anodes characterised by their shape

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Geometry (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Electrolytic Production Of Metals (AREA)
  • Measurement Of Radiation (AREA)
KR1020030084786A 2003-11-27 2003-11-27 평판표시장치 KR100611152B1 (ko)

Priority Applications (8)

Application Number Priority Date Filing Date Title
KR1020030084786A KR100611152B1 (ko) 2003-11-27 2003-11-27 평판표시장치
US10/938,080 US7656087B2 (en) 2003-11-27 2004-09-10 Flat panel display
CNB2004100118029A CN100423284C (zh) 2003-11-27 2004-09-23 平面显示器
EP04090473A EP1536465B1 (en) 2003-11-27 2004-11-29 TFT and flat panel display having via holes and anode with tapered edges
DE602004021894T DE602004021894D1 (de) 2003-11-27 2004-11-29 TFT und Flachbildschirm mit Durchkontaktierungen und Anodenkontakt mit abgeschrägten Seitenwänden
AT04090473T ATE436090T1 (de) 2003-11-27 2004-11-29 Tft und flachbildschirm mit durchkontaktierungen und anodenkontakt mit abgeschrägten seitenwänden
JP2004344946A JP4879478B2 (ja) 2003-11-27 2004-11-29 平板表示装置
US12/234,554 US7936125B2 (en) 2003-11-27 2008-09-19 Flat panel display

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020030084786A KR100611152B1 (ko) 2003-11-27 2003-11-27 평판표시장치

Publications (2)

Publication Number Publication Date
KR20050051076A KR20050051076A (ko) 2005-06-01
KR100611152B1 true KR100611152B1 (ko) 2006-08-09

Family

ID=34464755

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020030084786A KR100611152B1 (ko) 2003-11-27 2003-11-27 평판표시장치

Country Status (7)

Country Link
US (2) US7656087B2 (ja)
EP (1) EP1536465B1 (ja)
JP (1) JP4879478B2 (ja)
KR (1) KR100611152B1 (ja)
CN (1) CN100423284C (ja)
AT (1) ATE436090T1 (ja)
DE (1) DE602004021894D1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11605687B2 (en) 2020-07-02 2023-03-14 Samsung Display Co., Ltd. Pixel and display apparatus including the same

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JP2002343578A (ja) * 2001-05-10 2002-11-29 Nec Corp 発光体、発光素子、および発光表示装置
KR100552975B1 (ko) * 2003-11-22 2006-02-15 삼성에스디아이 주식회사 능동 매트릭스 유기전계발광표시장치 및 그의 제조방법
KR100611152B1 (ko) * 2003-11-27 2006-08-09 삼성에스디아이 주식회사 평판표시장치
KR100699996B1 (ko) * 2004-09-02 2007-03-26 삼성에스디아이 주식회사 회로 측정용 패드를 포함하는 유기전계발광표시장치와 그제조방법
JP4757550B2 (ja) * 2005-06-30 2011-08-24 株式会社 日立ディスプレイズ 表示装置およびその製造方法
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KR100731753B1 (ko) * 2005-09-26 2007-06-22 삼성에스디아이 주식회사 양면 발광 유기전계발광표시장치 및 그 제조 방법
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JP5126545B2 (ja) * 2009-02-09 2013-01-23 ソニー株式会社 表示装置の製造方法
KR101041144B1 (ko) * 2009-08-13 2011-06-13 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법 및 그를 포함하는 유기전계발광표시장치
JP2011113736A (ja) * 2009-11-25 2011-06-09 Toshiba Mobile Display Co Ltd 有機ｅｌ装置及びその製造方法
KR101394261B1 (ko) * 2010-03-29 2014-05-13 삼성디스플레이 주식회사 유기 발광 표시 장치
TWI439985B (zh) * 2010-08-26 2014-06-01 Chunghwa Picture Tubes Ltd 陣列基板及其製作方法
KR20120043404A (ko) 2010-10-26 2012-05-04 삼성모바일디스플레이주식회사 표시장치 및 이의 제조방법
KR101839930B1 (ko) 2010-12-29 2018-04-27 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치 제조 방법
TWI570809B (zh) * 2011-01-12 2017-02-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR102013893B1 (ko) 2012-08-20 2019-08-26 삼성디스플레이 주식회사 평판표시장치 및 그의 제조방법
JP5418862B2 (ja) * 2012-09-10 2014-02-19 ソニー株式会社 表示装置
JP5700870B2 (ja) * 2013-09-27 2015-04-15 日東電工株式会社 有機ｅｌデバイスの製造方法、および、有機ｅｌデバイス
TWI545733B (zh) * 2014-02-11 2016-08-11 群創光電股份有限公司 顯示面板
TWI532154B (zh) * 2014-02-25 2016-05-01 群創光電股份有限公司 顯示面板及顯示裝置
CN104659038A (zh) * 2015-03-13 2015-05-27 京东方科技集团股份有限公司 显示背板及其制作方法、显示装置
CN105280633B (zh) * 2015-11-30 2019-01-01 深圳市华星光电技术有限公司 Tft阵列基板及其制作方法
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KR102568781B1 (ko) * 2016-05-31 2023-08-22 삼성디스플레이 주식회사 유기발광 표시장치
CN106206672A (zh) * 2016-09-09 2016-12-07 深圳市华星光电技术有限公司 Amoled器件及其制作方法
CN207165572U (zh) * 2017-09-12 2018-03-30 京东方科技集团股份有限公司 一种阵列基板及显示装置
KR102052434B1 (ko) * 2017-12-11 2019-12-05 엘지디스플레이 주식회사 컨택 구조 및 이를 이용한 전계발광 표시장치
CN108445671A (zh) * 2018-03-16 2018-08-24 京东方科技集团股份有限公司 一种光路控制系统及显示装置
CN109904210B (zh) * 2019-03-27 2021-08-24 合肥鑫晟光电科技有限公司 一种显示基板及其制作方法、显示装置
CN209729911U (zh) 2019-06-19 2019-12-03 京东方科技集团股份有限公司 一种阵列基板、显示面板及显示装置
KR20240025121A (ko) * 2022-08-17 2024-02-27 삼성디스플레이 주식회사 표시 패널 및 표시 패널의 제조 방법

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