ATE436090T1 - Tft und flachbildschirm mit durchkontaktierungen und anodenkontakt mit abgeschrägten seitenwänden - Google Patents

Tft und flachbildschirm mit durchkontaktierungen und anodenkontakt mit abgeschrägten seitenwänden

Info

Publication number
ATE436090T1
ATE436090T1 AT04090473T AT04090473T ATE436090T1 AT E436090 T1 ATE436090 T1 AT E436090T1 AT 04090473 T AT04090473 T AT 04090473T AT 04090473 T AT04090473 T AT 04090473T AT E436090 T1 ATE436090 T1 AT E436090T1
Authority
AT
Austria
Prior art keywords
source
via hole
drain electrodes
tft
contacts
Prior art date
Application number
AT04090473T
Other languages
English (en)
Inventor
Mu-Hyun Kim
Myung-Won Song
Yu-Sung Cho
Original Assignee
Samsung Mobile Display Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Mobile Display Co Ltd filed Critical Samsung Mobile Display Co Ltd
Application granted granted Critical
Publication of ATE436090T1 publication Critical patent/ATE436090T1/de

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/082—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts the openings being tapered via holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H10D86/443—Interconnections, e.g. scanning lines adapted for preventing breakage, peeling or short circuiting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80515—Anodes characterised by their shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Electrolytic Production Of Metals (AREA)
  • Liquid Crystal (AREA)
AT04090473T 2003-11-27 2004-11-29 Tft und flachbildschirm mit durchkontaktierungen und anodenkontakt mit abgeschrägten seitenwänden ATE436090T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020030084786A KR100611152B1 (ko) 2003-11-27 2003-11-27 평판표시장치

Publications (1)

Publication Number Publication Date
ATE436090T1 true ATE436090T1 (de) 2009-07-15

Family

ID=34464755

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04090473T ATE436090T1 (de) 2003-11-27 2004-11-29 Tft und flachbildschirm mit durchkontaktierungen und anodenkontakt mit abgeschrägten seitenwänden

Country Status (7)

Country Link
US (2) US7656087B2 (de)
EP (1) EP1536465B1 (de)
JP (1) JP4879478B2 (de)
KR (1) KR100611152B1 (de)
CN (1) CN100423284C (de)
AT (1) ATE436090T1 (de)
DE (1) DE602004021894D1 (de)

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KR101041144B1 (ko) * 2009-08-13 2011-06-13 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법 및 그를 포함하는 유기전계발광표시장치
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KR101394261B1 (ko) * 2010-03-29 2014-05-13 삼성디스플레이 주식회사 유기 발광 표시 장치
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KR20120043404A (ko) 2010-10-26 2012-05-04 삼성모바일디스플레이주식회사 표시장치 및 이의 제조방법
KR101839930B1 (ko) 2010-12-29 2018-04-27 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치 제조 방법
TWI570809B (zh) * 2011-01-12 2017-02-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR102013893B1 (ko) 2012-08-20 2019-08-26 삼성디스플레이 주식회사 평판표시장치 및 그의 제조방법
JP5418862B2 (ja) * 2012-09-10 2014-02-19 ソニー株式会社 表示装置
JP5700870B2 (ja) * 2013-09-27 2015-04-15 日東電工株式会社 有機ｅｌデバイスの製造方法、および、有機ｅｌデバイス
TWI545733B (zh) * 2014-02-11 2016-08-11 群創光電股份有限公司 顯示面板
TWI532154B (zh) * 2014-02-25 2016-05-01 群創光電股份有限公司 顯示面板及顯示裝置
CN104659038A (zh) * 2015-03-13 2015-05-27 京东方科技集团股份有限公司 显示背板及其制作方法、显示装置
CN105280633B (zh) * 2015-11-30 2019-01-01 深圳市华星光电技术有限公司 Tft阵列基板及其制作方法
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CN207165572U (zh) * 2017-09-12 2018-03-30 京东方科技集团股份有限公司 一种阵列基板及显示装置
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CN108445671A (zh) * 2018-03-16 2018-08-24 京东方科技集团股份有限公司 一种光路控制系统及显示装置
CN109904210B (zh) * 2019-03-27 2021-08-24 合肥鑫晟光电科技有限公司 一种显示基板及其制作方法、显示装置
CN209729911U (zh) * 2019-06-19 2019-12-03 京东方科技集团股份有限公司 一种阵列基板、显示面板及显示装置
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US20050116630A1 (en) 2005-06-02
DE602004021894D1 (de) 2009-08-20
JP4879478B2 (ja) 2012-02-22
US7656087B2 (en) 2010-02-02
US7936125B2 (en) 2011-05-03
CN1622361A (zh) 2005-06-01
CN100423284C (zh) 2008-10-01
US20090072729A1 (en) 2009-03-19
JP2005159368A (ja) 2005-06-16
KR100611152B1 (ko) 2006-08-09
EP1536465B1 (de) 2009-07-08
EP1536465A1 (de) 2005-06-01

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