KR100423249B1 - 횡형 반도체장치 - Google Patents

횡형 반도체장치 Download PDF

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Publication number
KR100423249B1
KR100423249B1 KR10-2001-0037537A KR20010037537A KR100423249B1 KR 100423249 B1 KR100423249 B1 KR 100423249B1 KR 20010037537 A KR20010037537 A KR 20010037537A KR 100423249 B1 KR100423249 B1 KR 100423249B1
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KR
South Korea
Prior art keywords
semiconductor
region
type
insulating film
semiconductor device
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2001-0037537A
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English (en)
Korean (ko)
Other versions
KR20020004836A (ko
Inventor
스즈키후미토
Original Assignee
가부시끼가이샤 도시바
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Application filed by 가부시끼가이샤 도시바 filed Critical 가부시끼가이샤 도시바
Publication of KR20020004836A publication Critical patent/KR20020004836A/ko
Application granted granted Critical
Publication of KR100423249B1 publication Critical patent/KR100423249B1/ko
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H10D30/657—Lateral DMOS [LDMOS] FETs having substrates comprising insulating layers, e.g. SOI-LDMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/421—Insulated-gate bipolar transistors [IGBT] on insulating layers or insulating substrates, e.g. thin-film IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR10-2001-0037537A 2000-07-04 2001-06-28 횡형 반도체장치 Expired - Fee Related KR100423249B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000202341A JP2002026328A (ja) 2000-07-04 2000-07-04 横型半導体装置
JP2000-202341 2000-07-04

Publications (2)

Publication Number Publication Date
KR20020004836A KR20020004836A (ko) 2002-01-16
KR100423249B1 true KR100423249B1 (ko) 2004-03-18

Family

ID=18699875

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2001-0037537A Expired - Fee Related KR100423249B1 (ko) 2000-07-04 2001-06-28 횡형 반도체장치

Country Status (5)

Country Link
US (1) US6713794B2 (enExample)
JP (1) JP2002026328A (enExample)
KR (1) KR100423249B1 (enExample)
CN (1) CN1240136C (enExample)
TW (1) TW502439B (enExample)

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US7329566B2 (en) 2005-05-31 2008-02-12 Freescale Semiconductor, Inc. Semiconductor device and method of manufacture
US7244989B2 (en) * 2005-06-02 2007-07-17 Freescale Semiconductor, Inc. Semiconductor device and method of manufacture
US7180158B2 (en) * 2005-06-02 2007-02-20 Freescale Semiconductor, Inc. Semiconductor device and method of manufacture
JP4979212B2 (ja) 2005-08-31 2012-07-18 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法
JP2007242923A (ja) * 2006-03-09 2007-09-20 Matsushita Electric Ind Co Ltd 半導体集積回路の静電気保護素子
JP2007273920A (ja) * 2006-03-31 2007-10-18 Eudyna Devices Inc 半導体装置およびその製造方法
JP5272410B2 (ja) * 2008-01-11 2013-08-28 富士電機株式会社 半導体装置およびその製造方法
JP2010010408A (ja) * 2008-06-27 2010-01-14 Sanyo Electric Co Ltd 半導体装置及びその製造方法
KR101578931B1 (ko) * 2008-12-05 2015-12-21 주식회사 동부하이텍 반도체 소자 및 반도체 소자의 제조 방법
JP5124533B2 (ja) * 2009-06-30 2013-01-23 株式会社日立製作所 半導体装置、それを用いたプラズマディスプレイ駆動用半導体集積回路装置、及びプラズマディスプレイ装置
DE102011076610A1 (de) * 2010-06-04 2011-12-08 Denso Corporation Stromsensor, inverterschaltung und diese aufweisende halbleitervorrichtung
US8643101B2 (en) 2011-04-20 2014-02-04 United Microelectronics Corp. High voltage metal oxide semiconductor device having a multi-segment isolation structure
US8581338B2 (en) 2011-05-12 2013-11-12 United Microelectronics Corp. Lateral-diffused metal oxide semiconductor device (LDMOS) and fabrication method thereof
US8501603B2 (en) 2011-06-15 2013-08-06 United Microelectronics Corp. Method for fabricating high voltage transistor
US8592905B2 (en) 2011-06-26 2013-11-26 United Microelectronics Corp. High-voltage semiconductor device
US20130043513A1 (en) 2011-08-19 2013-02-21 United Microelectronics Corporation Shallow trench isolation structure and fabricating method thereof
US8729599B2 (en) 2011-08-22 2014-05-20 United Microelectronics Corp. Semiconductor device
US8921937B2 (en) 2011-08-24 2014-12-30 United Microelectronics Corp. High voltage metal-oxide-semiconductor transistor device and method of fabricating the same
US8742498B2 (en) 2011-11-03 2014-06-03 United Microelectronics Corp. High voltage semiconductor device and fabricating method thereof
US8482063B2 (en) 2011-11-18 2013-07-09 United Microelectronics Corporation High voltage semiconductor device
US8587058B2 (en) 2012-01-02 2013-11-19 United Microelectronics Corp. Lateral diffused metal-oxide-semiconductor device
US8492835B1 (en) 2012-01-20 2013-07-23 United Microelectronics Corporation High voltage MOSFET device
US9093296B2 (en) 2012-02-09 2015-07-28 United Microelectronics Corp. LDMOS transistor having trench structures extending to a buried layer
TWI523196B (zh) 2012-02-24 2016-02-21 聯華電子股份有限公司 高壓金氧半導體電晶體元件及其佈局圖案
US8890144B2 (en) 2012-03-08 2014-11-18 United Microelectronics Corp. High voltage semiconductor device
US9236471B2 (en) 2012-04-24 2016-01-12 United Microelectronics Corp. Semiconductor structure and method for manufacturing the same
US9159791B2 (en) 2012-06-06 2015-10-13 United Microelectronics Corp. Semiconductor device comprising a conductive region
US8836067B2 (en) 2012-06-18 2014-09-16 United Microelectronics Corp. Transistor device and manufacturing method thereof
US9076837B2 (en) 2012-07-06 2015-07-07 Taiwan Semiconductor Manufacturing Company, Ltd. Lateral insulated gate bipolar transistor structure with low parasitic BJT gain and stable threshold voltage
US8674441B2 (en) 2012-07-09 2014-03-18 United Microelectronics Corp. High voltage metal-oxide-semiconductor transistor device
US8643104B1 (en) 2012-08-14 2014-02-04 United Microelectronics Corp. Lateral diffusion metal oxide semiconductor transistor structure
US8729631B2 (en) 2012-08-28 2014-05-20 United Microelectronics Corp. MOS transistor
CN103681861B (zh) * 2012-08-31 2016-08-17 新唐科技股份有限公司 半导体元件及其制造方法
US9196717B2 (en) 2012-09-28 2015-11-24 United Microelectronics Corp. High voltage metal-oxide-semiconductor transistor device
US8829611B2 (en) 2012-09-28 2014-09-09 United Microelectronics Corp. High voltage metal-oxide-semiconductor transistor device
US8704304B1 (en) 2012-10-05 2014-04-22 United Microelectronics Corp. Semiconductor structure
US20140110777A1 (en) 2012-10-18 2014-04-24 United Microelectronics Corp. Trench gate metal oxide semiconductor field effect transistor and fabricating method thereof
US9224857B2 (en) 2012-11-12 2015-12-29 United Microelectronics Corp. Semiconductor structure and method for manufacturing the same
US9035425B2 (en) 2013-05-02 2015-05-19 United Microelectronics Corp. Semiconductor integrated circuit
US8896057B1 (en) 2013-05-14 2014-11-25 United Microelectronics Corp. Semiconductor structure and method for manufacturing the same
US8786362B1 (en) 2013-06-04 2014-07-22 United Microelectronics Corporation Schottky diode having current leakage protection structure and current leakage protecting method of the same
US8941175B2 (en) 2013-06-17 2015-01-27 United Microelectronics Corp. Power array with staggered arrangement for improving on-resistance and safe operating area
US9136375B2 (en) 2013-11-21 2015-09-15 United Microelectronics Corp. Semiconductor structure
US9570437B2 (en) * 2014-01-09 2017-02-14 Nxp B.V. Semiconductor die, integrated circuits and driver circuits, and methods of maufacturing the same
US9490360B2 (en) 2014-02-19 2016-11-08 United Microelectronics Corp. Semiconductor device and operating method thereof
CN103985759A (zh) * 2014-05-22 2014-08-13 无锡市晶源微电子有限公司 一种无耗尽注入的耗尽型pmos管结构

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JPH05235347A (ja) * 1992-02-25 1993-09-10 Matsushita Electron Corp 半導体装置
JPH05275703A (ja) * 1992-02-25 1993-10-22 Matsushita Electron Corp 半導体装置およびその製造方法
JPH06224426A (ja) * 1993-01-26 1994-08-12 Matsushita Electron Corp 半導体装置
US5559348A (en) * 1994-11-11 1996-09-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having insulated gate bipolar transistor
JPH11266018A (ja) * 1998-03-16 1999-09-28 Toshiba Corp 半導体装置
JPH11354779A (ja) * 1998-06-12 1999-12-24 Denso Corp 横型ｍｏｓトランジスタ
KR20000033197A (ko) * 1998-11-20 2000-06-15 김덕중 반도체소자 및 그 제조방법

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JPH06232351A (ja) * 1993-01-30 1994-08-19 Sony Corp ＢｉＣＭＯＳ型半導体装置及びその製造方法
JPH0766398A (ja) * 1993-08-26 1995-03-10 Nec Corp 高耐圧半導体装置
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JPH05235347A (ja) * 1992-02-25 1993-09-10 Matsushita Electron Corp 半導体装置
JPH05275703A (ja) * 1992-02-25 1993-10-22 Matsushita Electron Corp 半導体装置およびその製造方法
JPH06224426A (ja) * 1993-01-26 1994-08-12 Matsushita Electron Corp 半導体装置
US5559348A (en) * 1994-11-11 1996-09-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having insulated gate bipolar transistor
JPH11266018A (ja) * 1998-03-16 1999-09-28 Toshiba Corp 半導体装置
JPH11354779A (ja) * 1998-06-12 1999-12-24 Denso Corp 横型ｍｏｓトランジスタ
KR20000033197A (ko) * 1998-11-20 2000-06-15 김덕중 반도체소자 및 그 제조방법

Also Published As

Publication number Publication date
US6713794B2 (en) 2004-03-30
US20020005559A1 (en) 2002-01-17
JP2002026328A (ja) 2002-01-25
KR20020004836A (ko) 2002-01-16
TW502439B (en) 2002-09-11
CN1331495A (zh) 2002-01-16
CN1240136C (zh) 2006-02-01

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