CN1240136C - 横向半导体器件 - Google Patents

横向半导体器件 Download PDF

Info

Publication number
CN1240136C
CN1240136C CNB011221321A CN01122132A CN1240136C CN 1240136 C CN1240136 C CN 1240136C CN B011221321 A CNB011221321 A CN B011221321A CN 01122132 A CN01122132 A CN 01122132A CN 1240136 C CN1240136 C CN 1240136C
Authority
CN
China
Prior art keywords
mentioned
semiconductor
type
regions
forms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB011221321A
Other languages
English (en)
Chinese (zh)
Other versions
CN1331495A (zh
Inventor
铃木史人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of CN1331495A publication Critical patent/CN1331495A/zh
Application granted granted Critical
Publication of CN1240136C publication Critical patent/CN1240136C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H10D30/657—Lateral DMOS [LDMOS] FETs having substrates comprising insulating layers, e.g. SOI-LDMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/421—Insulated-gate bipolar transistors [IGBT] on insulating layers or insulating substrates, e.g. thin-film IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CNB011221321A 2000-07-04 2001-07-04 横向半导体器件 Expired - Fee Related CN1240136C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP202341/2000 2000-07-04
JP2000202341A JP2002026328A (ja) 2000-07-04 2000-07-04 横型半導体装置

Publications (2)

Publication Number Publication Date
CN1331495A CN1331495A (zh) 2002-01-16
CN1240136C true CN1240136C (zh) 2006-02-01

Family

ID=18699875

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB011221321A Expired - Fee Related CN1240136C (zh) 2000-07-04 2001-07-04 横向半导体器件

Country Status (5)

Country Link
US (1) US6713794B2 (enExample)
JP (1) JP2002026328A (enExample)
KR (1) KR100423249B1 (enExample)
CN (1) CN1240136C (enExample)
TW (1) TW502439B (enExample)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7628730B1 (en) * 1999-07-08 2009-12-08 Icon Ip, Inc. Methods and systems for controlling an exercise apparatus using a USB compatible portable remote device
US6888177B1 (en) * 2002-09-24 2005-05-03 T-Ram, Inc. Increased base-emitter capacitance
US7329566B2 (en) 2005-05-31 2008-02-12 Freescale Semiconductor, Inc. Semiconductor device and method of manufacture
US7180158B2 (en) * 2005-06-02 2007-02-20 Freescale Semiconductor, Inc. Semiconductor device and method of manufacture
US7244989B2 (en) * 2005-06-02 2007-07-17 Freescale Semiconductor, Inc. Semiconductor device and method of manufacture
JP4979212B2 (ja) 2005-08-31 2012-07-18 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法
JP2007242923A (ja) * 2006-03-09 2007-09-20 Matsushita Electric Ind Co Ltd 半導体集積回路の静電気保護素子
JP2007273920A (ja) * 2006-03-31 2007-10-18 Eudyna Devices Inc 半導体装置およびその製造方法
JP5272410B2 (ja) * 2008-01-11 2013-08-28 富士電機株式会社 半導体装置およびその製造方法
JP2010010408A (ja) * 2008-06-27 2010-01-14 Sanyo Electric Co Ltd 半導体装置及びその製造方法
KR101578931B1 (ko) * 2008-12-05 2015-12-21 주식회사 동부하이텍 반도체 소자 및 반도체 소자의 제조 방법
JP5124533B2 (ja) * 2009-06-30 2013-01-23 株式会社日立製作所 半導体装置、それを用いたプラズマディスプレイ駆動用半導体集積回路装置、及びプラズマディスプレイ装置
DE102011076610A1 (de) * 2010-06-04 2011-12-08 Denso Corporation Stromsensor, inverterschaltung und diese aufweisende halbleitervorrichtung
US8643101B2 (en) 2011-04-20 2014-02-04 United Microelectronics Corp. High voltage metal oxide semiconductor device having a multi-segment isolation structure
US8581338B2 (en) 2011-05-12 2013-11-12 United Microelectronics Corp. Lateral-diffused metal oxide semiconductor device (LDMOS) and fabrication method thereof
US8501603B2 (en) 2011-06-15 2013-08-06 United Microelectronics Corp. Method for fabricating high voltage transistor
US8592905B2 (en) 2011-06-26 2013-11-26 United Microelectronics Corp. High-voltage semiconductor device
US20130043513A1 (en) 2011-08-19 2013-02-21 United Microelectronics Corporation Shallow trench isolation structure and fabricating method thereof
US8729599B2 (en) 2011-08-22 2014-05-20 United Microelectronics Corp. Semiconductor device
US8921937B2 (en) 2011-08-24 2014-12-30 United Microelectronics Corp. High voltage metal-oxide-semiconductor transistor device and method of fabricating the same
US8742498B2 (en) 2011-11-03 2014-06-03 United Microelectronics Corp. High voltage semiconductor device and fabricating method thereof
US8482063B2 (en) 2011-11-18 2013-07-09 United Microelectronics Corporation High voltage semiconductor device
US8587058B2 (en) 2012-01-02 2013-11-19 United Microelectronics Corp. Lateral diffused metal-oxide-semiconductor device
US8492835B1 (en) 2012-01-20 2013-07-23 United Microelectronics Corporation High voltage MOSFET device
US9093296B2 (en) 2012-02-09 2015-07-28 United Microelectronics Corp. LDMOS transistor having trench structures extending to a buried layer
TWI523196B (zh) 2012-02-24 2016-02-21 聯華電子股份有限公司 高壓金氧半導體電晶體元件及其佈局圖案
US8890144B2 (en) 2012-03-08 2014-11-18 United Microelectronics Corp. High voltage semiconductor device
US9236471B2 (en) 2012-04-24 2016-01-12 United Microelectronics Corp. Semiconductor structure and method for manufacturing the same
US9159791B2 (en) 2012-06-06 2015-10-13 United Microelectronics Corp. Semiconductor device comprising a conductive region
US8836067B2 (en) 2012-06-18 2014-09-16 United Microelectronics Corp. Transistor device and manufacturing method thereof
US9076837B2 (en) 2012-07-06 2015-07-07 Taiwan Semiconductor Manufacturing Company, Ltd. Lateral insulated gate bipolar transistor structure with low parasitic BJT gain and stable threshold voltage
US8674441B2 (en) 2012-07-09 2014-03-18 United Microelectronics Corp. High voltage metal-oxide-semiconductor transistor device
US8643104B1 (en) 2012-08-14 2014-02-04 United Microelectronics Corp. Lateral diffusion metal oxide semiconductor transistor structure
US8729631B2 (en) 2012-08-28 2014-05-20 United Microelectronics Corp. MOS transistor
CN103681861B (zh) * 2012-08-31 2016-08-17 新唐科技股份有限公司 半导体元件及其制造方法
US8829611B2 (en) 2012-09-28 2014-09-09 United Microelectronics Corp. High voltage metal-oxide-semiconductor transistor device
US9196717B2 (en) 2012-09-28 2015-11-24 United Microelectronics Corp. High voltage metal-oxide-semiconductor transistor device
US8704304B1 (en) 2012-10-05 2014-04-22 United Microelectronics Corp. Semiconductor structure
US20140110777A1 (en) 2012-10-18 2014-04-24 United Microelectronics Corp. Trench gate metal oxide semiconductor field effect transistor and fabricating method thereof
US9224857B2 (en) 2012-11-12 2015-12-29 United Microelectronics Corp. Semiconductor structure and method for manufacturing the same
US9035425B2 (en) 2013-05-02 2015-05-19 United Microelectronics Corp. Semiconductor integrated circuit
US8896057B1 (en) 2013-05-14 2014-11-25 United Microelectronics Corp. Semiconductor structure and method for manufacturing the same
US8786362B1 (en) 2013-06-04 2014-07-22 United Microelectronics Corporation Schottky diode having current leakage protection structure and current leakage protecting method of the same
US8941175B2 (en) 2013-06-17 2015-01-27 United Microelectronics Corp. Power array with staggered arrangement for improving on-resistance and safe operating area
US9136375B2 (en) 2013-11-21 2015-09-15 United Microelectronics Corp. Semiconductor structure
US9570437B2 (en) * 2014-01-09 2017-02-14 Nxp B.V. Semiconductor die, integrated circuits and driver circuits, and methods of maufacturing the same
US9490360B2 (en) 2014-02-19 2016-11-08 United Microelectronics Corp. Semiconductor device and operating method thereof
CN103985759A (zh) * 2014-05-22 2014-08-13 无锡市晶源微电子有限公司 一种无耗尽注入的耗尽型pmos管结构

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5753944A (en) * 1980-09-17 1982-03-31 Hitachi Ltd Semiconductor integrated circuit
JPH02177454A (ja) * 1988-12-28 1990-07-10 Toshiba Corp 誘電体分離基板、誘電体分離型半導体装置およびその製造方法
JPH05275703A (ja) * 1992-02-25 1993-10-22 Matsushita Electron Corp 半導体装置およびその製造方法
JPH05235347A (ja) * 1992-02-25 1993-09-10 Matsushita Electron Corp 半導体装置
JP3161091B2 (ja) * 1992-10-30 2001-04-25 日本電気株式会社 半導体集積回路装置
JP3076468B2 (ja) * 1993-01-26 2000-08-14 松下電子工業株式会社 半導体装置
JPH06232351A (ja) * 1993-01-30 1994-08-19 Sony Corp ＢｉＣＭＯＳ型半導体装置及びその製造方法
JPH0766398A (ja) * 1993-08-26 1995-03-10 Nec Corp 高耐圧半導体装置
JP3307489B2 (ja) * 1993-12-09 2002-07-24 三菱電機株式会社 半導体装置およびその製造方法
JP3218267B2 (ja) * 1994-04-11 2001-10-15 新電元工業株式会社 半導体装置
JPH0818041A (ja) * 1994-06-29 1996-01-19 Rohm Co Ltd 高耐圧半導体装置およびその製造方法
JPH0823091A (ja) * 1994-07-06 1996-01-23 Nec Kansai Ltd 電界効果トランジスタ及びその製造方法
JPH08139319A (ja) * 1994-11-11 1996-05-31 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH11266018A (ja) * 1998-03-16 1999-09-28 Toshiba Corp 半導体装置
US5861657A (en) * 1996-01-18 1999-01-19 International Rectifier Corporation Graded concentration epitaxial substrate for semiconductor device having resurf diffusion
US5981983A (en) * 1996-09-18 1999-11-09 Kabushiki Kaisha Toshiba High voltage semiconductor device
US5869850A (en) 1996-12-13 1999-02-09 Kabushiki Kaishia Toshiba Lateral insulated gate bipolar transistor
JP3899683B2 (ja) * 1998-06-12 2007-03-28 株式会社デンソー 横型ｍｏｓトランジスタ
KR100281908B1 (ko) 1998-11-20 2001-02-15 김덕중 반도체소자 및 그 제조방법
JP3707942B2 (ja) * 1998-12-17 2005-10-19 三菱電機株式会社 半導体装置とそれを用いた半導体回路
US6265752B1 (en) * 1999-05-25 2001-07-24 Taiwan Semiconductor Manufacturing, Co., Inc. Method of forming a HVNMOS with an N+ buried layer combined with N well and a structure of the same

Also Published As

Publication number Publication date
CN1331495A (zh) 2002-01-16
US20020005559A1 (en) 2002-01-17
KR20020004836A (ko) 2002-01-16
KR100423249B1 (ko) 2004-03-18
US6713794B2 (en) 2004-03-30
JP2002026328A (ja) 2002-01-25
TW502439B (en) 2002-09-11

Similar Documents

Publication Publication Date Title
CN1240136C (zh) 横向半导体器件
CN1228857C (zh) 具有绝缘栅型双极晶体管的半导体器件及其制造方法
US6936893B2 (en) Power semiconductor device
US6501129B2 (en) Semiconductor device
CN1215570C (zh) Mos晶体管组件
CN1695255A (zh) 半导体部件及其制造方法
CN1244160C (zh) 半导体器件
CN1079996C (zh) 高压金属氧化物硅场效应晶体管结构
CN1227744C (zh) 双极金属氧化物半导体场效应晶体管器件
CN110610981B (zh) 功率半导体器件及其形成方法
CN1311560C (zh) 横向低侧高压器件及高侧高压器件
US20120313139A1 (en) Igbt and diode
CN1468449A (zh) 内含沟道型肖特基整流器的沟道型dmos晶体管
CN1841743A (zh) 双向晶体管及其方法
JPH04146674A (ja) 半導体装置及びその製造方法
CN1925170A (zh) 横向双扩散场效应晶体管及含有它的集成电路
CN1641886A (zh) 具有一分开井结构的隔离的高电压ldmos晶体管
CN1324716C (zh) 半导体元件
CN1075668C (zh) 绝缘栅双极晶体管
CN1328345A (zh) 半导体器件
JP4852188B2 (ja) 半導体装置
KR100290913B1 (ko) 고전압 소자 및 그 제조방법
CN1799144A (zh) 半导体器件的端子结构及其制造方法
CN1280917C (zh) 半导体装置及其制造方法
CN1110859C (zh) 双极型晶体管及其制造方法

Legal Events

Date Code Title Description
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20060201

Termination date: 20110704