TW502439B - Horizontal semiconductor device - Google Patents

Horizontal semiconductor device Download PDF

Info

Publication number
TW502439B
TW502439B TW090114996A TW90114996A TW502439B TW 502439 B TW502439 B TW 502439B TW 090114996 A TW090114996 A TW 090114996A TW 90114996 A TW90114996 A TW 90114996A TW 502439 B TW502439 B TW 502439B
Authority
TW
Taiwan
Prior art keywords
semiconductor
field
semiconductor device
type
insulating film
Prior art date
Application number
TW090114996A
Other languages
English (en)
Chinese (zh)
Inventor
Fumito Suzuki
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of TW502439B publication Critical patent/TW502439B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H10D30/657—Lateral DMOS [LDMOS] FETs having substrates comprising insulating layers, e.g. SOI-LDMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/421—Insulated-gate bipolar transistors [IGBT] on insulating layers or insulating substrates, e.g. thin-film IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW090114996A 2000-07-04 2001-06-20 Horizontal semiconductor device TW502439B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000202341A JP2002026328A (ja) 2000-07-04 2000-07-04 横型半導体装置

Publications (1)

Publication Number Publication Date
TW502439B true TW502439B (en) 2002-09-11

Family

ID=18699875

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090114996A TW502439B (en) 2000-07-04 2001-06-20 Horizontal semiconductor device

Country Status (5)

Country Link
US (1) US6713794B2 (enExample)
JP (1) JP2002026328A (enExample)
KR (1) KR100423249B1 (enExample)
CN (1) CN1240136C (enExample)
TW (1) TW502439B (enExample)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7628730B1 (en) * 1999-07-08 2009-12-08 Icon Ip, Inc. Methods and systems for controlling an exercise apparatus using a USB compatible portable remote device
US6888177B1 (en) * 2002-09-24 2005-05-03 T-Ram, Inc. Increased base-emitter capacitance
US7329566B2 (en) 2005-05-31 2008-02-12 Freescale Semiconductor, Inc. Semiconductor device and method of manufacture
US7180158B2 (en) * 2005-06-02 2007-02-20 Freescale Semiconductor, Inc. Semiconductor device and method of manufacture
US7244989B2 (en) * 2005-06-02 2007-07-17 Freescale Semiconductor, Inc. Semiconductor device and method of manufacture
JP4979212B2 (ja) 2005-08-31 2012-07-18 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法
JP2007242923A (ja) * 2006-03-09 2007-09-20 Matsushita Electric Ind Co Ltd 半導体集積回路の静電気保護素子
JP2007273920A (ja) * 2006-03-31 2007-10-18 Eudyna Devices Inc 半導体装置およびその製造方法
JP5272410B2 (ja) * 2008-01-11 2013-08-28 富士電機株式会社 半導体装置およびその製造方法
JP2010010408A (ja) * 2008-06-27 2010-01-14 Sanyo Electric Co Ltd 半導体装置及びその製造方法
KR101578931B1 (ko) * 2008-12-05 2015-12-21 주식회사 동부하이텍 반도체 소자 및 반도체 소자의 제조 방법
JP5124533B2 (ja) * 2009-06-30 2013-01-23 株式会社日立製作所 半導体装置、それを用いたプラズマディスプレイ駆動用半導体集積回路装置、及びプラズマディスプレイ装置
DE102011076610A1 (de) * 2010-06-04 2011-12-08 Denso Corporation Stromsensor, inverterschaltung und diese aufweisende halbleitervorrichtung
US8643101B2 (en) 2011-04-20 2014-02-04 United Microelectronics Corp. High voltage metal oxide semiconductor device having a multi-segment isolation structure
US8581338B2 (en) 2011-05-12 2013-11-12 United Microelectronics Corp. Lateral-diffused metal oxide semiconductor device (LDMOS) and fabrication method thereof
US8501603B2 (en) 2011-06-15 2013-08-06 United Microelectronics Corp. Method for fabricating high voltage transistor
US8592905B2 (en) 2011-06-26 2013-11-26 United Microelectronics Corp. High-voltage semiconductor device
US20130043513A1 (en) 2011-08-19 2013-02-21 United Microelectronics Corporation Shallow trench isolation structure and fabricating method thereof
US8729599B2 (en) 2011-08-22 2014-05-20 United Microelectronics Corp. Semiconductor device
US8921937B2 (en) 2011-08-24 2014-12-30 United Microelectronics Corp. High voltage metal-oxide-semiconductor transistor device and method of fabricating the same
US8742498B2 (en) 2011-11-03 2014-06-03 United Microelectronics Corp. High voltage semiconductor device and fabricating method thereof
US8482063B2 (en) 2011-11-18 2013-07-09 United Microelectronics Corporation High voltage semiconductor device
US8587058B2 (en) 2012-01-02 2013-11-19 United Microelectronics Corp. Lateral diffused metal-oxide-semiconductor device
US8492835B1 (en) 2012-01-20 2013-07-23 United Microelectronics Corporation High voltage MOSFET device
US9093296B2 (en) 2012-02-09 2015-07-28 United Microelectronics Corp. LDMOS transistor having trench structures extending to a buried layer
TWI523196B (zh) 2012-02-24 2016-02-21 聯華電子股份有限公司 高壓金氧半導體電晶體元件及其佈局圖案
US8890144B2 (en) 2012-03-08 2014-11-18 United Microelectronics Corp. High voltage semiconductor device
US9236471B2 (en) 2012-04-24 2016-01-12 United Microelectronics Corp. Semiconductor structure and method for manufacturing the same
US9159791B2 (en) 2012-06-06 2015-10-13 United Microelectronics Corp. Semiconductor device comprising a conductive region
US8836067B2 (en) 2012-06-18 2014-09-16 United Microelectronics Corp. Transistor device and manufacturing method thereof
US9076837B2 (en) 2012-07-06 2015-07-07 Taiwan Semiconductor Manufacturing Company, Ltd. Lateral insulated gate bipolar transistor structure with low parasitic BJT gain and stable threshold voltage
US8674441B2 (en) 2012-07-09 2014-03-18 United Microelectronics Corp. High voltage metal-oxide-semiconductor transistor device
US8643104B1 (en) 2012-08-14 2014-02-04 United Microelectronics Corp. Lateral diffusion metal oxide semiconductor transistor structure
US8729631B2 (en) 2012-08-28 2014-05-20 United Microelectronics Corp. MOS transistor
CN103681861B (zh) * 2012-08-31 2016-08-17 新唐科技股份有限公司 半导体元件及其制造方法
US8829611B2 (en) 2012-09-28 2014-09-09 United Microelectronics Corp. High voltage metal-oxide-semiconductor transistor device
US9196717B2 (en) 2012-09-28 2015-11-24 United Microelectronics Corp. High voltage metal-oxide-semiconductor transistor device
US8704304B1 (en) 2012-10-05 2014-04-22 United Microelectronics Corp. Semiconductor structure
US20140110777A1 (en) 2012-10-18 2014-04-24 United Microelectronics Corp. Trench gate metal oxide semiconductor field effect transistor and fabricating method thereof
US9224857B2 (en) 2012-11-12 2015-12-29 United Microelectronics Corp. Semiconductor structure and method for manufacturing the same
US9035425B2 (en) 2013-05-02 2015-05-19 United Microelectronics Corp. Semiconductor integrated circuit
US8896057B1 (en) 2013-05-14 2014-11-25 United Microelectronics Corp. Semiconductor structure and method for manufacturing the same
US8786362B1 (en) 2013-06-04 2014-07-22 United Microelectronics Corporation Schottky diode having current leakage protection structure and current leakage protecting method of the same
US8941175B2 (en) 2013-06-17 2015-01-27 United Microelectronics Corp. Power array with staggered arrangement for improving on-resistance and safe operating area
US9136375B2 (en) 2013-11-21 2015-09-15 United Microelectronics Corp. Semiconductor structure
US9570437B2 (en) * 2014-01-09 2017-02-14 Nxp B.V. Semiconductor die, integrated circuits and driver circuits, and methods of maufacturing the same
US9490360B2 (en) 2014-02-19 2016-11-08 United Microelectronics Corp. Semiconductor device and operating method thereof
CN103985759A (zh) * 2014-05-22 2014-08-13 无锡市晶源微电子有限公司 一种无耗尽注入的耗尽型pmos管结构

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5753944A (en) * 1980-09-17 1982-03-31 Hitachi Ltd Semiconductor integrated circuit
JPH02177454A (ja) * 1988-12-28 1990-07-10 Toshiba Corp 誘電体分離基板、誘電体分離型半導体装置およびその製造方法
JPH05275703A (ja) * 1992-02-25 1993-10-22 Matsushita Electron Corp 半導体装置およびその製造方法
JPH05235347A (ja) * 1992-02-25 1993-09-10 Matsushita Electron Corp 半導体装置
JP3161091B2 (ja) * 1992-10-30 2001-04-25 日本電気株式会社 半導体集積回路装置
JP3076468B2 (ja) * 1993-01-26 2000-08-14 松下電子工業株式会社 半導体装置
JPH06232351A (ja) * 1993-01-30 1994-08-19 Sony Corp ＢｉＣＭＯＳ型半導体装置及びその製造方法
JPH0766398A (ja) * 1993-08-26 1995-03-10 Nec Corp 高耐圧半導体装置
JP3307489B2 (ja) * 1993-12-09 2002-07-24 三菱電機株式会社 半導体装置およびその製造方法
JP3218267B2 (ja) * 1994-04-11 2001-10-15 新電元工業株式会社 半導体装置
JPH0818041A (ja) * 1994-06-29 1996-01-19 Rohm Co Ltd 高耐圧半導体装置およびその製造方法
JPH0823091A (ja) * 1994-07-06 1996-01-23 Nec Kansai Ltd 電界効果トランジスタ及びその製造方法
JPH08139319A (ja) * 1994-11-11 1996-05-31 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH11266018A (ja) * 1998-03-16 1999-09-28 Toshiba Corp 半導体装置
US5861657A (en) * 1996-01-18 1999-01-19 International Rectifier Corporation Graded concentration epitaxial substrate for semiconductor device having resurf diffusion
US5981983A (en) * 1996-09-18 1999-11-09 Kabushiki Kaisha Toshiba High voltage semiconductor device
US5869850A (en) 1996-12-13 1999-02-09 Kabushiki Kaishia Toshiba Lateral insulated gate bipolar transistor
JP3899683B2 (ja) * 1998-06-12 2007-03-28 株式会社デンソー 横型ｍｏｓトランジスタ
KR100281908B1 (ko) 1998-11-20 2001-02-15 김덕중 반도체소자 및 그 제조방법
JP3707942B2 (ja) * 1998-12-17 2005-10-19 三菱電機株式会社 半導体装置とそれを用いた半導体回路
US6265752B1 (en) * 1999-05-25 2001-07-24 Taiwan Semiconductor Manufacturing, Co., Inc. Method of forming a HVNMOS with an N+ buried layer combined with N well and a structure of the same

Also Published As

Publication number Publication date
CN1331495A (zh) 2002-01-16
US20020005559A1 (en) 2002-01-17
KR20020004836A (ko) 2002-01-16
KR100423249B1 (ko) 2004-03-18
US6713794B2 (en) 2004-03-30
JP2002026328A (ja) 2002-01-25
CN1240136C (zh) 2006-02-01

Similar Documents

Publication Publication Date Title
TW502439B (en) Horizontal semiconductor device
JP2932429B2 (ja) Ｍｏｓ電界効果トランジスタ及びその製造方法
US7553733B2 (en) Isolated LDMOS IC technology
JPS58210678A (ja) パワ−ｍｏｓｆｅｔ構成体及びその製造方法
US5162883A (en) Increased voltage MOS semiconductor device
US7339236B2 (en) Semiconductor device, driver circuit and manufacturing method of semiconductor device
AU640993B2 (en) Mosfet structure having reduced gate capacitance and method of forming same
US6225642B1 (en) Buried channel vertical double diffusion MOS device
JPH10189983A (ja) 半導体装置及びその製造方法
JP2712359B2 (ja) 半導体装置の製造方法
KR19990069332A (ko) 트랜치 게이트형 전력용 모스 소자 및 그 제조방법
JP2547729B2 (ja) 高耐圧パワ−集積回路
CN114566534A (zh) 切换式电源供应电路的高压元件及其制造方法
CN115917755A (zh) 碳化硅半导体装置
JPH1126769A (ja) Ｎ型ｍｏｓｆｅｔ及びその製造方法
JPH05326944A (ja) 横型ｍｏｓ電界効果トランジスタ
JP3338128B2 (ja) 半導体装置
JP3191285B2 (ja) 半導体装置及びその製造方法
JP3376209B2 (ja) 半導体装置とその製造方法
JPH0342874A (ja) 半導体装置
JP2001102388A (ja) 高耐圧半導体装置
TW492199B (en) Trench field effect transistor with a trenched heavy body
JPH06181315A (ja) 半導体素子
JPH03120870A (ja) 絶縁ゲート型半導体装置
JPH05243580A (ja) 半導体装置

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees