KR100228595B1 - 반도체장치 및 그 제조방법 - Google Patents

반도체장치 및 그 제조방법 Download PDF

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Publication number
KR100228595B1
KR100228595B1 KR1019960014648A KR19960014648A KR100228595B1 KR 100228595 B1 KR100228595 B1 KR 100228595B1 KR 1019960014648 A KR1019960014648 A KR 1019960014648A KR 19960014648 A KR19960014648 A KR 19960014648A KR 100228595 B1 KR100228595 B1 KR 100228595B1
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South Korea
Prior art keywords
substrate
hole
semiconductor chip
semiconductor device
wire bond
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Expired - Fee Related
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KR1019960014648A
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English (en)
Korean (ko)
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KR970024069A (ko
Inventor
아끼요시 사와이
기사미쯔 오노
히데유끼 이찌야마
가쯔노리 아사이
Original Assignee
요시토미 마사오
료덴 세미컨덕터 시스템 엔지니어링주식회사
다니구찌 이찌로오
미쓰비시덴키 가부시키가이샤
기타오카 다카시
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Publication of KR970024069A publication Critical patent/KR970024069A/ko
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Publication of KR100228595B1 publication Critical patent/KR100228595B1/ko
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
KR1019960014648A 1995-10-04 1996-05-06 반도체장치 및 그 제조방법 Expired - Fee Related KR100228595B1 (ko)

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JP25767195A JP3292798B2 (ja) 1995-10-04 1995-10-04 半導体装置
JP95-257671 1995-10-04

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190114723A (ko) * 2018-03-29 2019-10-10 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 다중-칩 모듈을 포함한 전자 카드

Families Citing this family (196)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6013948A (en) 1995-11-27 2000-01-11 Micron Technology, Inc. Stackable chip scale semiconductor package with mating contacts on opposed surfaces
US6734545B1 (en) * 1995-11-29 2004-05-11 Hitachi, Ltd. BGA type semiconductor device and electronic equipment using the same
US6861290B1 (en) 1995-12-19 2005-03-01 Micron Technology, Inc. Flip-chip adaptor package for bare die
JPH09266268A (ja) 1996-03-28 1997-10-07 Mitsubishi Electric Corp 半導体装置の製造方法および半導体装置のパッケージ
JP2000516044A (ja) * 1996-10-10 2000-11-28 サムソン・エレクトロニクス・カンパニー・リミテッド マイクロ波ハイブリッド集積回路
JPH10150069A (ja) * 1996-11-21 1998-06-02 Sony Corp 半導体パッケージ及びその製造方法
RU2138098C1 (ru) * 1996-12-04 1999-09-20 Самсунг Электроникс Ко., Лтд Мощная гибридная интегральная схема свч диапазона
US6160705A (en) * 1997-05-09 2000-12-12 Texas Instruments Incorporated Ball grid array package and method using enhanced power and ground distribution circuitry
TW449844B (en) * 1997-05-17 2001-08-11 Hyundai Electronics Ind Ball grid array package having an integrated circuit chip
JP3012555B2 (ja) * 1997-05-29 2000-02-21 神戸日本電気ソフトウェア株式会社 多面体ｉｃパッケージ
US5981312A (en) * 1997-06-27 1999-11-09 International Business Machines Corporation Method for injection molded flip chip encapsulation
KR100255476B1 (ko) * 1997-06-30 2000-05-01 김영환 볼 그리드 어레이 패키지
JP3622435B2 (ja) * 1997-08-06 2005-02-23 富士通株式会社 半導体装置とその製造方法
JP3638771B2 (ja) * 1997-12-22 2005-04-13 沖電気工業株式会社 半導体装置
JP3859340B2 (ja) * 1998-01-06 2006-12-20 三菱電機株式会社 半導体装置
JPH11289023A (ja) * 1998-04-02 1999-10-19 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
JP3097653B2 (ja) 1998-04-17 2000-10-10 日本電気株式会社 半導体装置用パッケージおよびその製造方法
USRE43112E1 (en) 1998-05-04 2012-01-17 Round Rock Research, Llc Stackable ball grid array package
US7112474B1 (en) 1998-06-24 2006-09-26 Amkor Technology, Inc. Method of making an integrated circuit package
US6893900B1 (en) 1998-06-24 2005-05-17 Amkor Technology, Inc. Method of making an integrated circuit package
US7005326B1 (en) 1998-06-24 2006-02-28 Amkor Technology, Inc. Method of making an integrated circuit package
US7071541B1 (en) 1998-06-24 2006-07-04 Amkor Technology, Inc. Plastic integrated circuit package and method and leadframe for making the package
US7332375B1 (en) 1998-06-24 2008-02-19 Amkor Technology, Inc. Method of making an integrated circuit package
US7030474B1 (en) 1998-06-24 2006-04-18 Amkor Technology, Inc. Plastic integrated circuit package and method and leadframe for making the package
US6143981A (en) 1998-06-24 2000-11-07 Amkor Technology, Inc. Plastic integrated circuit package and method and leadframe for making the package
JP2000031343A (ja) * 1998-07-09 2000-01-28 Texas Instr Japan Ltd 半導体装置
TW399309B (en) * 1998-09-30 2000-07-21 World Wiser Electronics Inc Cavity-down package structure with thermal via
US6753922B1 (en) * 1998-10-13 2004-06-22 Intel Corporation Image sensor mounted by mass reflow
US5999415A (en) * 1998-11-18 1999-12-07 Vlsi Technology, Inc. BGA package using PCB and tape in a die-down configuration
US6448633B1 (en) 1998-11-20 2002-09-10 Amkor Technology, Inc. Semiconductor package and method of making using leadframe having lead locks to secure leads to encapsulant
CN1225786C (zh) * 1998-12-21 2005-11-02 英特尔公司 带嵌入式框架的窗口式非陶瓷封装
US6396143B1 (en) * 1999-04-30 2002-05-28 Mitsubishi Gas Chemical Company, Inc. Ball grid array type printed wiring board having exellent heat diffusibility and printed wiring board
US6146749A (en) * 1999-05-03 2000-11-14 Jsr Corporation Low dielectric composition, insulating material, sealing material, and circuit board
JP2000331835A (ja) * 1999-05-21 2000-11-30 Taiyo Yuden Co Ltd 積層電子部品及び回路モジュール
JP3368870B2 (ja) * 1999-06-25 2003-01-20 日本電気株式会社 パッケージ基板及びこれを備えた半導体装置
JP3619395B2 (ja) * 1999-07-30 2005-02-09 京セラ株式会社 半導体素子内蔵配線基板およびその製造方法
KR20010037247A (ko) 1999-10-15 2001-05-07 마이클 디. 오브라이언 반도체패키지
KR100403142B1 (ko) 1999-10-15 2003-10-30 앰코 테크놀로지 코리아 주식회사 반도체패키지
KR100379089B1 (ko) 1999-10-15 2003-04-08 앰코 테크놀로지 코리아 주식회사 리드프레임 및 이를 이용한 반도체패키지
JP4245754B2 (ja) * 1999-11-02 2009-04-02 パナソニック株式会社 半導体装置
US6580159B1 (en) 1999-11-05 2003-06-17 Amkor Technology, Inc. Integrated circuit device packages and substrates for making the packages
US6847103B1 (en) 1999-11-09 2005-01-25 Amkor Technology, Inc. Semiconductor package with exposed die pad and body-locking leadframe
KR100421774B1 (ko) 1999-12-16 2004-03-10 앰코 테크놀로지 코리아 주식회사 반도체패키지 및 그 제조 방법
KR100583494B1 (ko) 2000-03-25 2006-05-24 앰코 테크놀로지 코리아 주식회사 반도체패키지
US7042068B2 (en) 2000-04-27 2006-05-09 Amkor Technology, Inc. Leadframe and semiconductor package made using the leadframe
TW511409B (en) * 2000-05-16 2002-11-21 Hitachi Aic Inc Printed wiring board having cavity for mounting electronic parts therein and method for manufacturing thereof
US6790760B1 (en) * 2000-07-21 2004-09-14 Agere Systems Inc. Method of manufacturing an integrated circuit package
US6509642B1 (en) * 2000-07-28 2003-01-21 Agere Systems Inc. Integrated circuit package
US6809424B2 (en) * 2000-12-19 2004-10-26 Harris Corporation Method for making electronic devices including silicon and LTCC and devices produced thereby
KR20020058209A (ko) 2000-12-29 2002-07-12 마이클 디. 오브라이언 반도체패키지
KR100731007B1 (ko) * 2001-01-15 2007-06-22 앰코 테크놀로지 코리아 주식회사 적층형 반도체 패키지
US6967395B1 (en) 2001-03-20 2005-11-22 Amkor Technology, Inc. Mounting for a package containing a chip
US6545345B1 (en) 2001-03-20 2003-04-08 Amkor Technology, Inc. Mounting for a package containing a chip
KR100369393B1 (ko) 2001-03-27 2003-02-05 앰코 테크놀로지 코리아 주식회사 리드프레임 및 이를 이용한 반도체패키지와 그 제조 방법
KR100393448B1 (ko) 2001-03-27 2003-08-02 앰코 테크놀로지 코리아 주식회사 반도체 패키지 및 그 제조 방법
US7045883B1 (en) 2001-04-04 2006-05-16 Amkor Technology, Inc. Thermally enhanced chip scale lead on chip semiconductor package and method of making same
US7064009B1 (en) 2001-04-04 2006-06-20 Amkor Technology, Inc. Thermally enhanced chip scale lead on chip semiconductor package and method of making same
KR100396796B1 (ko) * 2001-07-27 2003-09-02 삼성전기주식회사 고성능 ｂｇａ 기판의 제조방법 및 상기 방법에 적용되는지그
US6790710B2 (en) 2002-01-31 2004-09-14 Asat Limited Method of manufacturing an integrated circuit package
US7485952B1 (en) 2001-09-19 2009-02-03 Amkor Technology, Inc. Drop resistant bumpers for fully molded memory cards
US6900527B1 (en) 2001-09-19 2005-05-31 Amkor Technology, Inc. Lead-frame method and assembly for interconnecting circuits within a circuit module
US6630726B1 (en) 2001-11-07 2003-10-07 Amkor Technology, Inc. Power semiconductor package with strap
US20030150641A1 (en) * 2002-02-14 2003-08-14 Noyan Kinayman Multilayer package for a semiconductor device
US6977436B2 (en) * 2002-02-14 2005-12-20 Macronix International Co. Ltd. Semiconductor packaging device
JP2003258141A (ja) * 2002-02-27 2003-09-12 Nec Compound Semiconductor Devices Ltd 電子部品及びその製造方法
US20030178719A1 (en) * 2002-03-22 2003-09-25 Combs Edward G. Enhanced thermal dissipation integrated circuit package and method of manufacturing enhanced thermal dissipation integrated circuit package
US6608376B1 (en) * 2002-03-25 2003-08-19 Lsi Logic Corporation Integrated circuit package substrate with high density routing mechanism
US6608366B1 (en) 2002-04-15 2003-08-19 Harry J. Fogelson Lead frame with plated end leads
US6818973B1 (en) 2002-09-09 2004-11-16 Amkor Technology, Inc. Exposed lead QFP package fabricated through the use of a partial saw process
US6919620B1 (en) 2002-09-17 2005-07-19 Amkor Technology, Inc. Compact flash memory card with clamshell leadframe
JP3908148B2 (ja) * 2002-10-28 2007-04-25 シャープ株式会社 積層型半導体装置
US7723210B2 (en) 2002-11-08 2010-05-25 Amkor Technology, Inc. Direct-write wafer level chip scale package
US6905914B1 (en) 2002-11-08 2005-06-14 Amkor Technology, Inc. Wafer level package and fabrication method
US7361533B1 (en) 2002-11-08 2008-04-22 Amkor Technology, Inc. Stacked embedded leadframe
US7190062B1 (en) 2004-06-15 2007-03-13 Amkor Technology, Inc. Embedded leadframe semiconductor package
US6798047B1 (en) 2002-12-26 2004-09-28 Amkor Technology, Inc. Pre-molded leadframe
JP2004214249A (ja) * 2002-12-27 2004-07-29 Renesas Technology Corp 半導体モジュール
KR100701378B1 (ko) * 2002-12-30 2007-03-28 동부일렉트로닉스 주식회사 반도체 소자 패키징 방법
US6847099B1 (en) 2003-02-05 2005-01-25 Amkor Technology Inc. Offset etched corner leads for semiconductor package
US6750545B1 (en) 2003-02-28 2004-06-15 Amkor Technology, Inc. Semiconductor package capable of die stacking
US6927483B1 (en) 2003-03-07 2005-08-09 Amkor Technology, Inc. Semiconductor package exhibiting efficient lead placement
AU2003901146A0 (en) * 2003-03-12 2003-03-27 Cochlear Limited Feedthrough assembly
US7001799B1 (en) 2003-03-13 2006-02-21 Amkor Technology, Inc. Method of making a leadframe for semiconductor devices
US6794740B1 (en) 2003-03-13 2004-09-21 Amkor Technology, Inc. Leadframe package for semiconductor devices
US7095103B1 (en) 2003-05-01 2006-08-22 Amkor Technology, Inc. Leadframe based memory card
US6879034B1 (en) 2003-05-01 2005-04-12 Amkor Technology, Inc. Semiconductor package including low temperature co-fired ceramic substrate
US7116557B1 (en) * 2003-05-23 2006-10-03 Sti Electronics, Inc. Imbedded component integrated circuit assembly and method of making same
US7008825B1 (en) 2003-05-27 2006-03-07 Amkor Technology, Inc. Leadframe strip having enhanced testability
US6897550B1 (en) 2003-06-11 2005-05-24 Amkor Technology, Inc. Fully-molded leadframe stand-off feature
US7315000B2 (en) * 2003-07-27 2008-01-01 Sandisk Il Ltd. Electronic module with dual connectivity
US7245007B1 (en) 2003-09-18 2007-07-17 Amkor Technology, Inc. Exposed lead interposer leadframe package
US6921967B2 (en) 2003-09-24 2005-07-26 Amkor Technology, Inc. Reinforced die pad support structure
US7138707B1 (en) 2003-10-21 2006-11-21 Amkor Technology, Inc. Semiconductor package including leads and conductive posts for providing increased functionality
US7144517B1 (en) 2003-11-07 2006-12-05 Amkor Technology, Inc. Manufacturing method for leadframe and for semiconductor package using the leadframe
US7211879B1 (en) 2003-11-12 2007-05-01 Amkor Technology, Inc. Semiconductor package with chamfered corners and method of manufacturing the same
US7057268B1 (en) 2004-01-27 2006-06-06 Amkor Technology, Inc. Cavity case with clip/plug for use on multi-media card
US8395253B2 (en) * 2004-01-28 2013-03-12 International Rectifier Corporation Hermetic surface mounted power package
US7948069B2 (en) * 2004-01-28 2011-05-24 International Rectifier Corporation Surface mountable hermetically sealed package
US7091594B1 (en) 2004-01-28 2006-08-15 Amkor Technology, Inc. Leadframe type semiconductor package having reduced inductance and its manufacturing method
US8742944B2 (en) * 2004-06-21 2014-06-03 Siemens Energy, Inc. Apparatus and method of monitoring operating parameters of a gas turbine
US7202554B1 (en) 2004-08-19 2007-04-10 Amkor Technology, Inc. Semiconductor package and its manufacturing method
TW200612345A (en) * 2004-10-07 2006-04-16 Advanced Flash Memory Card Technology Co Ltd Structure of memory card and producing method thereof
US7405474B1 (en) * 2004-10-12 2008-07-29 Cypress Semiconductor Corporation Low cost thermally enhanced semiconductor package
US7217991B1 (en) 2004-10-22 2007-05-15 Amkor Technology, Inc. Fan-in leadframe semiconductor package
TWI321342B (en) * 2004-11-05 2010-03-01 Altus Technology Inc An integrate circuit chip encapsulation and the method of manufacturing it
TWM266539U (en) * 2004-11-05 2005-06-01 Altus Technology Inc Integrate circuit chip encapsulation
US7683393B2 (en) * 2004-12-07 2010-03-23 Ngk Spark Plug Co., Ltd. Wiring substrate for mounting light emitting element
JP4426482B2 (ja) 2005-02-28 2010-03-03 Ｏｋｉセミコンダクタ株式会社 パッケージ基台およびその製造方法、並びにそのパッケージ基台を備えた半導体パッケージ
US7408244B2 (en) * 2005-03-16 2008-08-05 Advanced Semiconductor Engineering, Inc. Semiconductor package and stack arrangement thereof
EP1720386B1 (en) * 2005-04-25 2015-06-03 NGK Spark Plug Company Limited Wiring board
KR100702970B1 (ko) * 2005-07-06 2007-04-03 삼성전자주식회사 이원 접속 방식을 가지는 반도체 패키지 및 그 제조 방법
JP4904769B2 (ja) * 2005-10-21 2012-03-28 富士通セミコンダクター株式会社 半導体装置
CN100586253C (zh) 2005-11-09 2010-01-27 皇家飞利浦电子股份有限公司 包装、包装载体及其制造方法、诊断设备及其制造方法
US7507603B1 (en) 2005-12-02 2009-03-24 Amkor Technology, Inc. Etch singulated semiconductor package
US7572681B1 (en) 2005-12-08 2009-08-11 Amkor Technology, Inc. Embedded electronic component package
US9713258B2 (en) * 2006-04-27 2017-07-18 International Business Machines Corporation Integrated circuit chip packaging
DE102006023165B4 (de) * 2006-05-17 2008-02-14 Infineon Technologies Ag Verfahren zur Herstellung eines akustischen Spiegels aus alternierend angeordneten Schichten hoher und niedriger akustischer Impedanz
US7902660B1 (en) 2006-05-24 2011-03-08 Amkor Technology, Inc. Substrate for semiconductor device and manufacturing method thereof
US7968998B1 (en) 2006-06-21 2011-06-28 Amkor Technology, Inc. Side leaded, bottom exposed pad and bottom exposed lead fusion quad flat semiconductor package
US20080032454A1 (en) * 2006-08-07 2008-02-07 Matthew Romig Thermally Enhanced BGA Package Substrate Structure and Methods
US7687893B2 (en) 2006-12-27 2010-03-30 Amkor Technology, Inc. Semiconductor package having leadframe with exposed anchor pads
US7829990B1 (en) 2007-01-18 2010-11-09 Amkor Technology, Inc. Stackable semiconductor package including laminate interposer
US8159828B2 (en) * 2007-02-23 2012-04-17 Alpha & Omega Semiconductor, Inc. Low profile flip chip power module and method of making
US7982297B1 (en) 2007-03-06 2011-07-19 Amkor Technology, Inc. Stackable semiconductor package having partially exposed semiconductor die and method of fabricating the same
US7977774B2 (en) 2007-07-10 2011-07-12 Amkor Technology, Inc. Fusion quad flat semiconductor package
US20090032926A1 (en) * 2007-07-31 2009-02-05 Advanced Micro Devices, Inc. Integrated Support Structure for Stacked Semiconductors With Overhang
US7687899B1 (en) 2007-08-07 2010-03-30 Amkor Technology, Inc. Dual laminate package structure with embedded elements
US7777351B1 (en) 2007-10-01 2010-08-17 Amkor Technology, Inc. Thin stacked interposer package
US8089159B1 (en) 2007-10-03 2012-01-03 Amkor Technology, Inc. Semiconductor package with increased I/O density and method of making the same
DE102007056269A1 (de) * 2007-10-22 2009-04-23 Rohde & Schwarz Gmbh & Co. Kg Gekühltes Multichipmodul
US20090112975A1 (en) * 2007-10-31 2009-04-30 Microsoft Corporation Pre-fetching in distributed computing environments
US7847386B1 (en) 2007-11-05 2010-12-07 Amkor Technology, Inc. Reduced size stacked semiconductor package and method of making the same
US7956453B1 (en) 2008-01-16 2011-06-07 Amkor Technology, Inc. Semiconductor package with patterning layer and method of making same
US7723852B1 (en) 2008-01-21 2010-05-25 Amkor Technology, Inc. Stacked semiconductor package and method of making same
US8067821B1 (en) 2008-04-10 2011-11-29 Amkor Technology, Inc. Flat semiconductor package with half package molding
US7768135B1 (en) 2008-04-17 2010-08-03 Amkor Technology, Inc. Semiconductor package with fast power-up cycle and method of making same
US7808084B1 (en) 2008-05-06 2010-10-05 Amkor Technology, Inc. Semiconductor package with half-etched locking features
US20090296310A1 (en) * 2008-06-03 2009-12-03 Azuma Chikara Chip capacitor precursors, packaged semiconductors, and assembly method for converting the precursors to capacitors
US8188379B2 (en) * 2008-07-04 2012-05-29 Unimicron Technology Corp. Package substrate structure
US8125064B1 (en) 2008-07-28 2012-02-28 Amkor Technology, Inc. Increased I/O semiconductor package and method of making same
US8184453B1 (en) 2008-07-31 2012-05-22 Amkor Technology, Inc. Increased capacity semiconductor package
US8076587B2 (en) * 2008-09-26 2011-12-13 Siemens Energy, Inc. Printed circuit board for harsh environments
US7847392B1 (en) 2008-09-30 2010-12-07 Amkor Technology, Inc. Semiconductor device including leadframe with increased I/O
US7989933B1 (en) 2008-10-06 2011-08-02 Amkor Technology, Inc. Increased I/O leadframe and semiconductor device including same
US8008758B1 (en) 2008-10-27 2011-08-30 Amkor Technology, Inc. Semiconductor device with increased I/O leadframe
US8089145B1 (en) 2008-11-17 2012-01-03 Amkor Technology, Inc. Semiconductor device including increased capacity leadframe
US8072050B1 (en) 2008-11-18 2011-12-06 Amkor Technology, Inc. Semiconductor device with increased I/O leadframe including passive device
US7875963B1 (en) 2008-11-21 2011-01-25 Amkor Technology, Inc. Semiconductor device including leadframe having power bars and increased I/O
US7982298B1 (en) 2008-12-03 2011-07-19 Amkor Technology, Inc. Package in package semiconductor device
US8487420B1 (en) 2008-12-08 2013-07-16 Amkor Technology, Inc. Package in package semiconductor device with film over wire
US20170117214A1 (en) 2009-01-05 2017-04-27 Amkor Technology, Inc. Semiconductor device with through-mold via
US8680656B1 (en) 2009-01-05 2014-03-25 Amkor Technology, Inc. Leadframe structure for concentrated photovoltaic receiver package
US8058715B1 (en) 2009-01-09 2011-11-15 Amkor Technology, Inc. Package in package device for RF transceiver module
US8026589B1 (en) 2009-02-23 2011-09-27 Amkor Technology, Inc. Reduced profile stackable semiconductor package
US7960818B1 (en) 2009-03-04 2011-06-14 Amkor Technology, Inc. Conformal shield on punch QFN semiconductor package
US8575742B1 (en) 2009-04-06 2013-11-05 Amkor Technology, Inc. Semiconductor device with increased I/O leadframe including power bars
US20110001230A1 (en) * 2009-07-02 2011-01-06 Conexant Systems, Inc. Systems and Methods of Improved Heat Dissipation with Variable Pitch Grid Array Packaging
US20110051352A1 (en) * 2009-09-02 2011-03-03 Kim Gyu Han Stacking-Type USB Memory Device And Method Of Fabricating The Same
US9875911B2 (en) * 2009-09-23 2018-01-23 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming interposer with opening to contain semiconductor die
US8796561B1 (en) 2009-10-05 2014-08-05 Amkor Technology, Inc. Fan out build up substrate stackable package and method
KR20110041313A (ko) * 2009-10-15 2011-04-21 에스티에스반도체통신 주식회사 적층형 고상 드라이브 및 그 제조 방법
US8937381B1 (en) 2009-12-03 2015-01-20 Amkor Technology, Inc. Thin stackable package and method
US9691734B1 (en) 2009-12-07 2017-06-27 Amkor Technology, Inc. Method of forming a plurality of electronic component packages
US20110147069A1 (en) * 2009-12-18 2011-06-23 International Business Machines Corporation Multi-tiered Circuit Board and Method of Manufacture
JP5442424B2 (ja) 2009-12-25 2014-03-12 新光電気工業株式会社 半導体装置
WO2011089936A1 (ja) * 2010-01-22 2011-07-28 日本電気株式会社 機能素子内蔵基板及び配線基板
US8324511B1 (en) 2010-04-06 2012-12-04 Amkor Technology, Inc. Through via nub reveal method and structure
US8294276B1 (en) 2010-05-27 2012-10-23 Amkor Technology, Inc. Semiconductor device and fabricating method thereof
US8440554B1 (en) 2010-08-02 2013-05-14 Amkor Technology, Inc. Through via connected backside embedded circuit features structure and method
US8487445B1 (en) 2010-10-05 2013-07-16 Amkor Technology, Inc. Semiconductor device having through electrodes protruding from dielectric layer
US8791501B1 (en) 2010-12-03 2014-07-29 Amkor Technology, Inc. Integrated passive device structure and method
US8390130B1 (en) 2011-01-06 2013-03-05 Amkor Technology, Inc. Through via recessed reveal structure and method
TWI557183B (zh) 2015-12-16 2016-11-11 財團法人工業技術研究院 矽氧烷組成物、以及包含其之光電裝置
US8648450B1 (en) 2011-01-27 2014-02-11 Amkor Technology, Inc. Semiconductor device including leadframe with a combination of leads and lands
US8552548B1 (en) 2011-11-29 2013-10-08 Amkor Technology, Inc. Conductive pad on protruding through electrode semiconductor device
JP6176118B2 (ja) * 2012-02-07 2017-08-09 株式会社ニコン 撮像ユニットおよび撮像装置
US9704725B1 (en) 2012-03-06 2017-07-11 Amkor Technology, Inc. Semiconductor device with leadframe configured to facilitate reduced burr formation
JP5768745B2 (ja) * 2012-03-08 2015-08-26 日立化成株式会社 感光性樹脂組成物からなる接着剤
US9129943B1 (en) 2012-03-29 2015-09-08 Amkor Technology, Inc. Embedded component package and fabrication method
US9048298B1 (en) 2012-03-29 2015-06-02 Amkor Technology, Inc. Backside warpage control structure and fabrication method
KR101311707B1 (ko) * 2013-03-26 2013-09-25 주식회사 심텍 다이스택 패키지 및 제조 방법
JP2014207388A (ja) * 2013-04-15 2014-10-30 株式会社東芝 半導体パッケージ
KR101486790B1 (ko) 2013-05-02 2015-01-28 앰코 테크놀로지 코리아 주식회사 강성보강부를 갖는 마이크로 리드프레임
KR101563911B1 (ko) 2013-10-24 2015-10-28 앰코 테크놀로지 코리아 주식회사 반도체 패키지
CN105210183B (zh) * 2014-04-23 2018-06-12 京瓷株式会社 电子元件安装用基板以及电子装置
US9673122B2 (en) 2014-05-02 2017-06-06 Amkor Technology, Inc. Micro lead frame structure having reinforcing portions and method
US9693445B2 (en) * 2015-01-30 2017-06-27 Avago Technologies General Ip (Singapore) Pte. Ltd. Printed circuit board with thermal via
CN106847719B (zh) * 2016-11-28 2019-08-13 西安科锐盛创新科技有限公司 应用于测试的裸芯片结构及其制造方法
CN106856177B (zh) * 2016-11-28 2019-07-02 嘉兴鹏武电子科技有限公司 应用于测试的裸芯片结构及其制造方法
CN106803500B (zh) * 2016-11-28 2019-02-22 深兰科技（上海）有限公司 裸芯片与印制电路板连接和保护结构及其制造方法
US20190355700A1 (en) * 2016-12-28 2019-11-21 Intel Corporation Techniques for windowed substrate integrated circuit packages
JP6955460B2 (ja) * 2018-02-27 2021-10-27 京セラ株式会社 電子素子実装用基板、電子素子実装用母基板、電子装置および電子モジュール
CN111863739B (zh) * 2020-07-29 2022-04-08 深圳市邦测检测技术有限公司 一种rf射频通信模块及其制造方法
JP7574620B2 (ja) * 2020-11-19 2024-10-29 富士電機株式会社 モジュール型半導体装置およびモジュール型半導体装置の製造方法
KR102708838B1 (ko) * 2022-12-08 2024-09-24 한국전자기술연구원 Rf 전치단 모듈 패키지
WO2024246986A1 (ja) * 2023-05-26 2024-12-05 株式会社Fuji 回路形成方法、および回路形成装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4922324A (en) * 1987-01-20 1990-05-01 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device
JPH0722645A (ja) * 1993-06-17 1995-01-24 Matsushita Electric Ind Co Ltd 非線形光学素子の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06103731B2 (ja) * 1987-08-25 1994-12-14 日本電気株式会社 半導体パッケ−ジ
US5008734A (en) * 1989-12-20 1991-04-16 National Semiconductor Corporation Stadium-stepped package for an integrated circuit with air dielectric
CA2047486C (en) * 1990-07-21 2002-03-05 Shigeru Katayama Semiconductor device and method for manufacturing the same
JPH04107958A (ja) * 1990-08-29 1992-04-09 Toshiba Corp 半導体パッケージ
JPH04245459A (ja) * 1991-01-31 1992-09-02 Nec Corp 半導体装置
JPH04303955A (ja) * 1991-03-30 1992-10-27 Shinko Electric Ind Co Ltd 半導体装置
US5491362A (en) * 1992-04-30 1996-02-13 Vlsi Technology, Inc. Package structure having accessible chip
US5521332A (en) * 1992-08-31 1996-05-28 Kyocera Corporation High dielectric layer-containing alumina-based wiring substrate and package for semiconductor device
US5422615A (en) * 1992-09-14 1995-06-06 Hitachi, Ltd. High frequency circuit device
AU6582294A (en) * 1993-04-23 1994-11-21 Nihon Micron Kabushiki Kaisha Ic package and method of its manufacture
US5455456A (en) * 1993-09-15 1995-10-03 Lsi Logic Corporation Integrated circuit package lid
US5463250A (en) * 1994-04-29 1995-10-31 Westinghouse Electric Corp. Semiconductor component package
US5541450A (en) * 1994-11-02 1996-07-30 Motorola, Inc. Low-profile ball-grid array semiconductor package

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4922324A (en) * 1987-01-20 1990-05-01 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device
JPH0722645A (ja) * 1993-06-17 1995-01-24 Matsushita Electric Ind Co Ltd 非線形光学素子の製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190114723A (ko) * 2018-03-29 2019-10-10 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 다중-칩 모듈을 포함한 전자 카드
KR102192014B1 (ko) * 2018-03-29 2020-12-17 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 다중-칩 모듈을 포함한 전자 카드
US10916529B2 (en) 2018-03-29 2021-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Electronics card including multi-chip module
US11658164B2 (en) 2018-03-29 2023-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Electronics card including multi-chip module
US12199080B2 (en) 2018-03-29 2025-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Electronics card including multi-chip module

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