JP2000516044A - マイクロ波ハイブリッド集積回路 - Google Patents

マイクロ波ハイブリッド集積回路

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Publication number
JP2000516044A
JP2000516044A JP51743398A JP51743398A JP2000516044A JP 2000516044 A JP2000516044 A JP 2000516044A JP 51743398 A JP51743398 A JP 51743398A JP 51743398 A JP51743398 A JP 51743398A JP 2000516044 A JP2000516044 A JP 2000516044A
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Japan
Prior art keywords
substrate
chip
integrated circuit
hybrid integrated
microwave hybrid
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Pending
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JP51743398A
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English (en)
Inventor
イオフダルスキー，ビクトル・アナトーリエビッチ
Original Assignee
サムソン・エレクトロニクス・カンパニー・リミテッド
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Publication of JP2000516044A publication Critical patent/JP2000516044A/ja
Pending legal-status Critical Current

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Abstract

(57)【要約】 マイクロ波ハイブリッド集積回路は、トポロジー的な金属被覆パターン（２）とたくさんのくぼみ（３）とを備える誘電体基板（１）を備え、半導体チップ（５）はバインダー（４）によって取付ける。接触パッド（６）を備えるチップ（５）のおもて面は、基板（１）の表面と同一平面上にあり、チップ（５）の接触パッド（６）は、トポロジー的な金属被覆パターン（２）と電気的に接続する。くぼみ（３）の壁は、基板（１）面に対して９０．１°〜１５０°の角度（α）で傾いている。

Description

【発明の詳細な説明】 マイクロ波ハイブリッド集積回路技術分野 本発明は、一般に、電子工学に関し、特に、マイクロ波ハイブリッド集積回路 （ＩＣ）に関する。背景技術 以下のマイクロ波ハイブリッドＩＣが知られている。すなわち、その回路は、 トポロジー的な金属被覆パターンと、半導体チップとを有する誘電体基板を備え 、半導体チップを基板中に配置した結果、接触パッドを備える各チップのおもて 面が基板表面と同じ面に位置しており、チップの接触パッドは、トポロジー的な 金属被覆パターンと電気的に接続している。（ＵＳ，Ａ，４，７２２，９１４） しかしながら、前記ハイブリッドＩＣは、壁の一方から他方へくぼみの底に沿 って半導体チップが移動可能であることによって、相互連結ワイヤーの長さが変 化すると、回路電気パラメータのばらつきを有する。 別の従来技術マイクロ波ハイブリッドＩＣが知られている。すなわち、その回 路は、トポロジー的な金属被覆パターンとくぼみを有する誘電体基板を備え、チ ップタイプの半導体デバイスのチップはバインダーによって固定されており、接 触パッドを有するチップのおもて面は、基板表面と同一平面上にあり、チップの 接触パッドは、トポロジー的な金属被覆パターンと電気的に接続している。(Ｊ Ｐ，Ｂ，４９−１２７９４) 前記のハイブリッドＩＣは、ワイヤーを相互連結する長さが異なって取付ける 間に、くぼみの底に沿ってチップが移動するために、その電気パラメータの再現 性が悪い。発明の概要 本発明の主たる目的は、マイクロ波ハイブリッド集積回路を提供することであ る。すなわち、くぼみを誘電体基板中に形成し、半導体チップをくぼみに取付け 、その結果、ＩＣの電気パラメータの再現性と製造性とが良くなる。 前述の目的は以下のことによって達成される。マイクロ波ハイブリッドＩＣに おいて、本発明によって、トポロジー的な金属被覆パターンとたくさんのくぼみ を備えた誘電体基板とを備え、半導体チップをバインダーによって取付け、接触 パッドを備えたチップのおもて面は、基板表面と同一平面上にあるが、チップの 接触パッドがトポロジー的な金属被覆パターンと電気的に接続しており、各くぼ みの壁は、基板表面に対して９０．１°〜１５０°の角度で傾いている。 ９０．１°より小さい基板表面に対する壁傾斜角度を形成することは、ポジテ ィブな結果を与えない。１５０°より大きい前記角度を形成することは、実質的 に接続リード線の長さを長くし、それゆえに、擬似インダクタンスを大きくする 。 くぼみを金属被覆した金属コーティングは、基板のトポロジー的な金属被覆と 電気的に接続する。基板は、その裏面にシールド接地金属被覆を備え、くぼみの 底に金属被覆した穴が形成され、シールド接地金属被覆との接続のために導電性 及び熱伝導性の材料で満たす。 くぼみの壁を基板表面に対してα＝９０．１°〜１５０°の角度で傾けること によって、以下のことが確実になる。 第１に、チップがくぼみの底に沿って移動する可能性が小さくなり、トポロジ ー的な金属被覆と接触パッドとを相互連結する導体長の変化が小さくなって、そ の結果、回路電気パラメータの再現性が高くなる。 第２に、くぼみ金属被覆とトポロジー的な金属被覆との間の電気接続が簡単に なるのと同様に、くぼみへのチップの取付け精度と、その位置決め精度が高くな り、それによって製造しやすくなる。図面の簡単な説明 本発明は、いくつかの代表的な実施形態について添付の図面を参照して説明す る。 図１は、本願のマイクロ波ハイブリッドＩＣの断面図である。 図２は、図１の平面図である。 図３は、本願のマイクロ波ハイブリッドＩＣの別の実施形態の断面図である。 図４は、本願のマイクロ波ハイブリッドＩＣのさらに別の実施形態の断面図で ある。詳細な説明 本発明によるマイクロ波ハイブリッドＩＣは、例えば、ポリコールからなる、 厚さ０．５ｍｍの誘電体基板１（図１と図２）を備え、そのおもて面にトポロジ ー的な金属被覆パターン２を有する。トポロジー的な金属被覆は、Ｃｒ−Ｃｕ（ スプレー付着技術によって厚さ３μｍを形成）−Ｃｕ（電気メッキによって厚さ ３μｍを形成）−Ｎｉ（電気メッキによって厚さ０．５μｍを形成）−Ａｕ（電 気メッキによって厚さ３μｍを形成）という構造である。基板１がたくさんのく ぼみ３を有し、そのそれぞれは、例えば、０．６ｍｍ×０．６ｍｍ×０．１６ｍ ｍであり、基板表面に対してα＝１２０°の壁傾斜角度αを有する。この場合、 くぼみの底のバインダー４の層は厚さ１０μｍであり、チップ５とくぼみ３の上 部エッジとの距離は８７μｍである。タイプ エ.チェ.エ−エス(ЭЧЭ−С)( 標準仕様書 ウィ．ウ．オ（ЫУО）０．０２８．０５２ テ．ウ(ТУ)）の接 着剤が、バインダー４として用いられる。 ０．５ｍｍ×０．５ｍｍ×０．１５ｍｍのチップトランジスタ３ペー３２５ア ー−５（３Π３２５Ａ−５）のチップ５は、くぼみ３に取付け、その表面が基板 １の表面と一致している。チップ５の接触パッド６は、直径１５μｍの金ワイヤ ー７によってトポロジー的な金属被覆パターン２と電気的に接続している。 くぼみ３（図３）は、金属コートしており、金属被覆８の構造は、例えば、Ｐ ｄ−Ｎｉ（厚さ０．２μｍを化学的に形成）−Ｃｕ（厚さ３μｍを電気メッキに よって形成）−Ｎｉ（厚さ０．５μｍを電気メッキによって形成）−Ａｕ（厚さ ３μｍを電気メッキによって形成）である。 くぼみ３（図４）の底において、金属被覆した穴９は、例えば、直径１００μ ｍを有し、導電性及び熱伝導性の材料１０、たとえば、予備的に活性化した銅に ＰｄＣｌ2＋ＳｎＣｌ2で成長させた材料で満たして作成する。基板１の裏面は、 基板１のおもて面に金属被覆２の構造と似た構造のシールド接地金属被覆１１を 備える。 本発明によるマイクロ波ハイブリッド集積回路は、次のように作用する。 トランジスタ増幅器ステージの入力に加えた信号は、適切に変換され、その後 、 増幅信号がステージ出力に達する。 本願のマイクロ波ハイブリッド集積回路により、半導体チップの相互連結ワイ ヤー（リード）長さの変化が減り、したがって、電気回路パラメータが再現しや すくなる。そして、くぼみ金属被覆とトポロジー的な金属被覆パターンとの間の 単純な接続と同様に、くぼみへのチップの正確な取付けと位置決めによって製造 しやすくなる。上述のすべてによって、回路トリミング手順の困難さが低減する 。 さらに、くぼみの金属被覆とトポロジー的な金属被覆パターンへのそれらの接 続は、回路の信頼性が高くなる。 本発明の開示した実施形態の記載において、明確にするために、具体的な狭い 意味の用語を用いている。しかしながら、本発明は、選択した具体的な用語に制 限されない。そのような各用語が、類似した方法で作用し、類似した問題を解決 するために用いる、全ての等価なエレメントをカバーすることは、理解されるで あろう。 本発明は、本明細書において、好ましい実施形態を記載しているけれども、当 業者によって容易に理解されるように、本発明の精神と範囲から逸脱することな く構造の詳細にいろいろな変形を加えることは、理解される。 これらの変形した実施形態の全てが、本発明と請求項の精神及び請求の範囲内 にあることを考慮するべきである。

Claims (1)

  1. 【特許請求の範囲】 １．トポロジー的な金属被覆パターン（２）と多くのくぼみ（３）とを備えた誘 電体基板（１）を備え、半導体チップ（５）はバインダー（４）によって取付け られ、接触パッド（６）を備えるチップ（５）表面は基板（１）の表面と同一平 面上にあるが、チップ（５）の接触パッド（６）はトポロジー的な金属被覆パタ ーン（２）と電気的に接続しているマイクロ波ハイブリッド集積回路において、 各くぼみ（３）の壁が、基板（１）面に対して９０．１°〜１５０°の角度（ α）で傾いていることを特徴とするマイクロ波ハイブリッド集積回路。 ２．くぼみ（３）を金属被覆して、くぼみ（３）の金属被覆（８）は基板（１） の金属被覆のトポロジー的なパターン（２）と電気的に接続していることを特徴 とする請求項１記載のマイクロ波ハイブリッド集積回路。 ３．基板（１）は、シールド接地金属被覆（１１）をその裏面に有し、金属被覆 した穴（９）はくぼみ（３）の底に備え、前記穴が導電性及び熱伝導性の材料（ １０）で満たされていることを特徴とする請求項１又は請求項２記載のマイクロ 波ハイブリッド集積回路。
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