JPWO2017061139A1 - 柱状半導体装置の製造方法 - Google Patents
柱状半導体装置の製造方法 Download PDFInfo
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- JPWO2017061139A1 JPWO2017061139A1 JP2017544382A JP2017544382A JPWO2017061139A1 JP WO2017061139 A1 JPWO2017061139 A1 JP WO2017061139A1 JP 2017544382 A JP2017544382 A JP 2017544382A JP 2017544382 A JP2017544382 A JP 2017544382A JP WO2017061139 A1 JPWO2017061139 A1 JP WO2017061139A1
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Abstract
Description
基板上に前記基板平面に垂直に形成された半導体柱と、前記半導体柱の外周を囲んで形成されたゲート絶縁層と、前記ゲート絶縁層を囲んで形成されたゲート導体層と、前記半導体柱内に形成された第1の不純物領域と、前記半導体柱内に前記第1の不純物領域と離れて形成された第2の不純物領域と、を有する1個または複数個の半導体構造体、並びに、
それぞれが前記半導体構造体のいずれかの前記ゲート導体層、前記第1の不純物領域、又は前記第2の不純物領域に接続され、前記基板平面に水平に延在し、且つ平面視において互いに少なくとも部分的に重なり、下から上にこの順番で存在する第1の配線導体層、第2の配線導体層、及び第3の配線導体層を含む積層構造体を提供する工程と、
前記第1の配線導体層の上表面又は内部まで、前記第3の配線導体層及び前記第2の配線導体層を貫通する第1のコンタクト部を形成する工程と、
前記第1のコンタクト部の側面にあって、前記第2の配線導体層の側面に第1の管状絶縁層を形成する工程と、
前記第1のコンタクト部を充満して第1の導体層を形成する工程と、
前記第1の導体層の頂部を露出させ、その後に、前記第1の導体層の頂部を囲んで第1の材料層を形成する工程と、
全体に第1の絶縁層を被覆して、その後、前記第1の導体層と前記第1の材料層との上部表面を露出させ、前記第1の導体層と、前記第1の材料層と、前記第1の絶縁層との上部表面を平滑化する工程と、
前記第1の材料層を除去する工程と、
前記第1の絶縁層をマスクにして、前記第3の配線導体層の上部表面に達する第2のコンタクト部を形成する工程と、
前記第2のコンタクト部を充満して第2の導体層を形成する工程と、
を備える、ことを特徴とする。
前記第1の導体層と同じ導体材料よりなる第3の導体層を前記第3のコンタクト部に充満する工程と、
前記第1の導体層と前記第3の導体層との頂部表面を同じにする工程とを備える、ことがさらに好ましい。
以下、図1A、図1B、図2A〜図2Xを参照しながら、本発明の第1実施形態に係る、SGTを有する柱状半導体装置の製造方法について説明する。
Si柱SP1には、図1AにおけるPチャネル型SGT_Pc1が上部に形成され、Pチャネル型SGT_Pc2が下部に形成されている。Pチャネル型SGT_Pc1、Pc2はSi柱SP1の中間にあるSiO2層Ox1で分離されている。Pチャネル型SGT_Pc1は、チャネルであるSi柱SP1の一部と、このSi柱SP1の一部を囲むゲートGp1と、ゲートGp1の上下のSi柱SP1内にあるドレインP+層Pd1とソースP+層Ps1とより形成されている。Pチャネル型SGT_Pc2は、チャネルであるSi柱SP1の一部と、このSi柱SP1の一部を囲むゲートGp2と、ゲートGp2の上下のSi柱SP1内にあるドレインP+層Pd2とソースP+層Ps2とより形成されている。
Si柱SP2には、図1AにおけるNチャネル型SGT_Nc1が上部に形成され、Nチャネル型SGT_Nc2が下部に形成されている。Nチャネル型SGT_Nc1、Nc2はSi柱SP2の中間にあるSiO2層Ox2で分離されている。Nチャネル型SGT_Nc1は、チャネルであるSi柱SP2の一部と、このSi柱SP2の一部を囲むゲートGn1と、ゲートGn1の上下のSi柱SP2内にあるドレインN+層Nd1とソースN+層Ns1とより形成されている。Nチャネル型SGT_Nc2は、チャネルであるSi柱SP2の一部と、このSi柱SP2の一部を囲むゲートGn2と、ゲートGn2の上下のSi柱SP2内にあるドレインN+層Nd2とソースN+層Ns2とより形成されている。
Si柱SP3には、図1AにおけるNチャネル型SGT_SN1が上部に形成され、Nチャネル型SGT_SN2が下部に形成されている。Nチャネル型SGT_SN1、SN2はSi柱SP3の中間にあるSiO2層Ox3で分離されている。Nチャネル型SGT_SN1は、チャネルであるSi柱SP3の一部と、このSi柱SP3の一部を囲むゲートGs1と、ゲートGs1の上下のSi柱SP3内にあるドレインN+層Sd1とソースN+層Ss1とより形成されている。Nチャネル型SGT_SN2は、チャネルであるSi柱SP3の一部と、このSi柱SP3の一部を囲むゲートGs2と、ゲートGs2の上下のSi柱SP3内にあるドレインN+層Sd2とソースN+層Ss2とより形成されている。
次に、リソグラフィ法とRIE法を用いて、下層に残存するi層2をエッチングして、Si柱6aの外周部にi層2a1を、Si柱6bの外周部にi層2a2を、Si柱6cの外周部にi層2a3を形成する。
また、Si柱6bの上部に、N+層38b、33bをソース、ドレインとし、TiN層18dをゲートとし、N+層38b、33b間のSi柱6bをチャネルにしたSGT(図1BのNチャネル型SGT_Nc1に対応する)が形成され、Si柱6bの下部に、N+層8bb、31bをソース、ドレインとし、TiN層18aをゲートとし、N+層8bb、31b間のSi柱6aをチャネルにしたSGT(図1BのNチャネル型SGT_Nc2に対応する)が、形成される。
また、Si柱6cの上部に、N+層38c、33cをソース、ドレインとし、TiN層18eをゲートとし、N+層38c、33c間のSi柱6cをチャネルにしたSGT(図1BのNチャネル型SGT_SN1に対応する)が形成され、Si柱6cの下部に、N+層8cc、31cをソース、ドレインとし、TiN層18bをゲートとし、N+層8cc、31c間のSi柱6cをチャネルにしたSGT(図1BのNチャネル型SGT_Nc2に対応する)が、形成される。
これらSGT(図1BのSGT_Pc1、Pc2、Nc1、Nc2、SN1、SN2に対応する)が接続配線されて、図1Bに示した模式構造図と同じく、Si柱6a、6b、6cの上部に形成されたPチャネル型SGT(図1BのPチャネル型SGT_Pc1に対応する)及びNチャネル型SGT(図1BのNチャネル型SGT_Nc1、SN1に対応する)による回路領域(図1Bの回路領域C1に対応する)と、Si柱6a、6b、6cの下部に形成されたPチャネル型SGT(図1BのPチャネル型SGT_Pc2に対応する)及びNチャネル型SGT(図1BのNチャネル型SGT_Nc2、SN2に対応する)による回路領域(図1Bの回路領域C2に対応する)と、により構成されたSRAMセル回路が形成される。
1.W層43aaに面したNiSi層28bbの側面にSiO2層41aが形成されている。これにより、平面視において、NiSi層28aa、28bb、36aが、お互いに重なっているのにも関わらず、これらを貫通するW層43aaとNiSi層28bbとを絶縁しつつ、NiSi層28aaとNiSi層36aとを接続することが可能となる。これは、SRAMセル面積の縮小を可能にする。
同様に、W層43bbに面したNiSi層28aaの側面にSiO2層41cが形成されている。これにより、平面視において、TiN層18a、NiSi層28aa、28bbが、お互いに重なっているのにも関わらず、これらを貫通するW層43bbによって、W層43bbとNiSi層28aaを絶縁しつつ、TiN層18aとNiSi層28bbとを接続することが可能となる。これは、SRAMセル面積の縮小を可能にする。
2.平面視において互いに重なった、下部配線導体層であるNiSi層28aa、中間配線導体層であるNiSi層28bb、上部配線導体層であるNiSi層36aを有する構造において、NiSi層28aa上に、NiSi層28bb、36aを貫通して、且つ頂部がNiSi層36aより上部に位置するW層43aaを形成し、そして、このW層43aaの外周を囲み、特別なリソグラフィ法を用いないで、自己整合で形成されたW層54aaが、NiSi層36aとその上表面に接続されることにより、配線金属層55a、NiSi層36a、28aaとの接続が実現している。
同様に、平面視において互いに重なった、下部配線導体層であるTiN層18a、中間配線導体層であるNiSi層28aa、上部配線導体層であるNiSi層28bbを有する構造において、TiN層18a上に、NiSi層28aa、28bbを貫通して、且つ頂部がNiSi層28bbより上部に位置するW層43bbを形成し、そして、このW層43bbの外周を囲み、特別のリソグラフィ法を用いないで、自己整合で形成されたW層54bbが、NiSi層36aと、その上表面に接続されることにより、配線金属層55bと、NiSi層28bbと、TiN層18aとの接続が実現している。
このように、W層43aaとW層54aaとが自己整合で形成され、W層43bbとW層54bbとが自己整合で形成されている。これにより、SRAMセルの高密度配線が実現する。
これにより、平面視で見ると、本実施形態のSRAMセル回路領域は、3つのSi柱6a、6b、6cと、9個のコンタクトホール40a(W層43aaが埋め込まれている)、40b(W層43bbが埋め込まれている)、45a、45b、45c、45d、47、49a、49bと、により構成されている。通常、1つの半導体柱に1つのSGTを形成する場合、ソース、ドレイン、ゲートの、少なくとも3個の配線金属層へのコンタクト(コンタクトホールを介した接続)が必要である。これに対して、本実施形態では、1つの半導体柱(Si柱)において2個のSGTを形成しているにも係わらず、1つの半導体柱当たり3個のコンタクトでSRAMセル回路が形成される。これにより、高密度なSGTを有したSRAMセル回路が実現できる。このように、SGTのような柱状半導体を用いた回路においては、ソース、ドレイン、そしてゲートなどのノード(node)に繋がる配線導体層が、平面視において重なって形成され、かつ接続すべき配線導体層の間に、絶縁しなければいけない配線導体層がある場合において、本実施形態に示した配線導体層間接続は回路の高密度化に繋がる。
以下、図3A、図3Bを参照しながら、本発明の第2実施形態に係る、SGTを有する柱状半導体装置の製造方法について説明する。(a)は平面図、(b)は(a)のX−X’線に沿う断面構造図、(c)は(a)のY1−Y1’線に沿う断面構造図、(d)は(a)のY2−Y2’線に沿う断面構造図、(e)は(a)のY3−Y3’線に沿った断面構造図である。第2実施形態の製造方法は、以下に説明する相違点を除き、第1実施形態の図2A〜図2Xに示す工程と同様である。
第1実施形態では、W層54aaと配線金属層55aが別々に形成されているのに対して、本実施形態では、両者が一体化されたW層60aとなっている。これにより、配線金属層55a形成のための金属層堆積工程が不要になり、工程を簡略化できる利点がある。
以下、図4A〜図4Cを参照しながら、本発明の第2実施形態に係る、SGTを有する柱状半導体装置の製造方法について説明する。(a)は平面図、(b)は(a)のX−X’線に沿う断面構造図、(c)は(a)のY1−Y1’線に沿う断面構造図、(d)は(a)のY2−Y2’線に沿う断面構造図、(e)は(a)のY3−Y3’線に沿った断面構造図である。第3実施形態の製造方法は、以下に説明する相違点を除き、第1実施形態の図2A〜図2Xに示す工程と同様である。
第1実施形態では、コンタクトホール45a、45b、45c、47、49a、49bの底部位置が、それぞれ異なっていた。これに対して、第3実施形態では、コンタクトホール45a、45b、45c、47、49a、49bの底部位置が、W層43aa、43bb、54aa、54bb、61a、61b、61c、61d、61e、61f、61gの頂部表面位置になっている。これにより、コンタクトホール45a、45b、45c、47、49a、49bを介した配線金属層VDD、VSS、BL,BLR、WLの形成が容易になる。例えば、CPUチップのようにSRAMセル領域と同じチップ上に論理回路を形成する場合、配線金属層の層数が数10層に及ぶので、論理回路部の形成を含めて、配線金属層に繋がるコンタクトホールの底部一を高さ方向で同じにするのは、配線金属層の高密度形成に繋がる。
Nc1、Nc2、Nc3、Nc4、SN1、SN2 Nチャネル型SGT
BLt ビット線端子
BLRt 反転ビット線端子
WLt ワード線端子
Vss グランド端子
Vdd 電源端子
C1、C2 回路領域
Gp1、Gp2、Gn1、Gn2、Gs1、Gs2 ゲート
1 SiO2層基板
2、2a1、2a2、2a3、2b1、2b2、2b3、4、4a、4b、4c i層
Ns1、Ns2、Nd1、Nd2、Sd1、Sd2、NS1、ND、Ss1、SD1、SD2、Ss2、8a、8b、8c、8aa、8bb、8cc、31b、31c、32b、32c、33b、33c、38b、38c、101a、101b N+層
8a、8aa、38a、31a、32a、33a、38a P+層
Ox1、Ox2、Ox3、3、3a、3b、3c、5、5a、5b、5c、7a、7b、7c、10、14、14a、14b、14c、14d、23a、23b、23aa、23bb、37、39、39a、41a、41b、41c、44、46、46a、46b、48 SiO2層
SP1、SP2、SP3、6a、6b、6c Si柱
11、11a、11b、11c、11d HfO2層
12、12a、12b、18a、18b、18c、18d、18e TiN層
15、35 SiN層
51 AlO層
16、27、54 レジスト層
20a、20b、20c、20d、20e、20f TiO層
21a、21b Ni層
22a、22b P型ポリSi層
26a、26b N+型ポリSi層
25a、25b、25c 空間
28a、28b、28aa、28bb、30a、30b、30c、32a、32b、32c、36a、36b、 NiSi層
40a、40b、40c、45a、45b、45c、45d、47、49a、49b、52a、52b、59a、59b、59c、59d、59e、59f、59g コンタクトホール
43a、43aa、43b、43bb、54aa、54bb、60a、60b、61a、61b、61c、61d、61e、61f、61g W層
55a、55b 配線金属層
VDD 電源配線金属層
VSS グランド配線金属層
WL ワード線配線金属層
BL ビット線配線金属層
BLR 反転ビット線配線金属層
Claims (4)
- 基板上に前記基板平面に垂直に形成された半導体柱と、前記半導体柱の外周を囲んで形成されたゲート絶縁層と、前記ゲート絶縁層を囲んで形成されたゲート導体層と、前記半導体柱内に形成された第1の不純物領域と、前記半導体柱内に前記第1の不純物領域と離れて形成された第2の不純物領域と、を有する1個または複数個の半導体構造体、並びに、
それぞれが前記半導体構造体のいずれかの前記ゲート導体層、前記第1の不純物領域、又は前記第2の不純物領域に接続され、前記基板平面に水平に延在し、且つ平面視において互いに少なくとも部分的に重なり、下から上にこの順番で存在する第1の配線導体層、第2の配線導体層、及び第3の配線導体層を含む積層構造体を提供する工程と、
前記第1の配線導体層の上表面又は内部まで、前記第3の配線導体層及び前記第2の配線導体層を貫通する第1のコンタクト部を形成する工程と、
前記第1のコンタクト部の側面にあって、前記第2の配線導体層の側面に第1の管状絶縁層を形成する工程と、
前記第1のコンタクト部を充満して第1の導体層を形成する工程と、
前記第1の導体層の頂部を露出させ、その後に、前記第1の導体層の頂部を囲んで第1の材料層を形成する工程と、
全体に第1の絶縁層を被覆して、その後、前記第1の導体層と前記第1の材料層との上部表面を露出させ、前記第1の導体層と、前記第1の材料層と、前記第1の絶縁層との上部表面を平滑化する工程と、
前記第1の材料層を除去する工程と、
前記第1の絶縁層をマスクにして、前記第3の配線導体層の上部表面に達する第2のコンタクト部を形成する工程と、
前記第2のコンタクト部を充満して第2の導体層を形成する工程と、
を備える、
ことを特徴とする柱状半導体装置の製造方法。 - 前記第1の導体層と前記第2の導体層の頂部表面の位置を揃える工程を備える、
ことを特徴とする請求項1に記載の柱状半導体装置の製造方法。 - 前記第2の導体層を形成する工程は、導体材料を、前記第2のコンタクト部に充満させ、且つ前記第1の絶縁層上に堆積し、その後、リソグラフィ法とエッチングにより、前記導体材料から、前記第2の導体層と、前記第1の導体層及び前記第2の導体層の上部表面に繋がった配線導体層とを一体に形成する工程を備える、
ことを特徴とする請求項1に記載の柱状半導体装置の製造方法。 - 平面視において、前記第1のコンタクト部の場所以外にあり、前記第1の絶縁層表面より下方に延びて、前記ゲート導体層と、前記第1の不純物領域と、前記第2の不純物領域とのいずれかと繋がった、1個または複数の第3のコンタクト部を形成する工程と、
前記第1の導体層と同じ導体材料よりなる第3の導体層を前記第3のコンタクト部に充満する工程と、
前記第1の導体層と前記第3の導体層との頂部表面を同じにする工程とを備える、
ことを特徴とする請求項1に記載の柱状半導体装置の製造方法。
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