JPWO2012086441A1 - 弾性波装置及びその製造方法 - Google Patents
弾性波装置及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims abstract description 26
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910017083 AlN Inorganic materials 0.000 claims abstract description 16
- 229910004541 SiN Inorganic materials 0.000 claims abstract description 10
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims abstract description 9
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 7
- -1 LiTaO 3 Inorganic materials 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 17
- 239000010453 quartz Substances 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 210
- 235000019687 Lamb Nutrition 0.000 description 22
- 239000010408 film Substances 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02228—Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
本発明の弾性波装置の製造方法は特に限定されないが、好ましくは以下の第2〜第4の実施形態の製造方法を好適に用いることができる。
2…支持基板
3…音響反射層
3a,3c,3e,3g…高音響インピーダンス層
3b,3d,3f,3h…低音響インピーダンス層
4…圧電体層
5…IDT電極
6,7…反射器
Claims (8)
- 支持基板と、
前記支持基板上に形成されている音響反射層と、
前記音響反射層上に形成されている圧電体層と、
前記圧電体層の上面または下面に形成されたIDT電極とを備え、
前記圧電体層の厚みが、前記IDT電極の電極指の周期よりも小さく、板波が伝搬する弾性波装置であって、
前記音響反射層が、低音響インピーダンス層と、該低音響インピーダンス層よりも音響インピーダンスが高い高音響インピーダンス層とを有し、
前記低音響インピーダンス層がSiO2からなり、前記高音響インピーダンス層が、W、LiTaO3、Al2O3、AlN、LiNbO3、SiN及びZnOからなる群から選択された少なくとも一種の材料からなる、弾性波装置。 - 前記高インピーダンス層が、LiTaO3、Al2O3、AlN、LiNbO3、SiN及びZnOからなる群から選択された少なくとも一種の材料からなる、請求項1に記載の弾性波装置。
- 前記圧電体層が、LiTaO3、LiNbO3、ZnO、AlN及び水晶からなる群から選択された少なくとも一種の材料からなる、請求項1または2に記載の弾性波装置。
- 支持基板上に音響反射層を形成する工程と、
前記音響反射層上に圧電体層を積層する工程と、前記圧電体層上にIDT電極を形成する工程とを備える、請求項1〜4のいずれか一項に記載の弾性波装置の製造方法。 - 前記音響反射層上に前記圧電体層を形成する工程が、前記音響反射層上に、圧電体層を接合し、次に、該圧電体層を薄くして前記圧電体層を形成することにより行う、請求項5に記載の弾性波装置の製造方法。
- 前記圧電体層を前記音響反射層上に積層する工程が、前記音響反射層上に前記圧電体層を成膜することにより行われる、請求項5に記載の弾性波装置の製造方法。
- 前記圧電体層よりも厚い圧電体上に、前記音響反射層を形成する工程と、前記音響反射層の前記圧電体が積層されている側と反対側の面に前記支持基板を接合する工程と、
前記圧電体を薄くし、前記圧電体層を形成する工程と、前記圧電体層上にIDT電極を形成する工程とを備える、請求項1〜4のいずれか一項に記載の弾性波装置の製造方法。
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JP2012549722A JP5648695B2 (ja) | 2010-12-24 | 2011-12-12 | 弾性波装置及びその製造方法 |
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JP2010287505 | 2010-12-24 | ||
JP2010287505 | 2010-12-24 | ||
PCT/JP2011/078696 WO2012086441A1 (ja) | 2010-12-24 | 2011-12-12 | 弾性波装置及びその製造方法 |
JP2012549722A JP5648695B2 (ja) | 2010-12-24 | 2011-12-12 | 弾性波装置及びその製造方法 |
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JPWO2012086441A1 true JPWO2012086441A1 (ja) | 2014-05-22 |
JP5648695B2 JP5648695B2 (ja) | 2015-01-07 |
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US (1) | US9780759B2 (ja) |
EP (1) | EP2658122B1 (ja) |
JP (1) | JP5648695B2 (ja) |
CN (1) | CN103283147B (ja) |
WO (1) | WO2012086441A1 (ja) |
Families Citing this family (148)
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US9780759B2 (en) | 2017-10-03 |
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