WO2021114555A1 - 电极具有空隙层的体声波谐振器、滤波器及电子设备 - Google Patents

电极具有空隙层的体声波谐振器、滤波器及电子设备 Download PDF

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WO2021114555A1
WO2021114555A1 PCT/CN2020/088700 CN2020088700W WO2021114555A1 WO 2021114555 A1 WO2021114555 A1 WO 2021114555A1 CN 2020088700 W CN2020088700 W CN 2020088700W WO 2021114555 A1 WO2021114555 A1 WO 2021114555A1
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layer
electrode
gap
electrode layer
resonator
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PCT/CN2020/088700
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English (en)
French (fr)
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庞慰
郝龙
徐洋
张巍
张孟伦
杨清瑞
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诺思(天津)微系统有限责任公司
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Priority to EP20898856.8A priority Critical patent/EP4113838A4/en
Publication of WO2021114555A1 publication Critical patent/WO2021114555A1/zh

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02157—Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/174—Membranes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6489—Compensation of undesirable effects
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H2009/155—Constructional features of resonators consisting of piezoelectric or electrostrictive material using MEMS techniques

Definitions

  • the embodiments of the present invention relate to the semiconductor field, and in particular, to a bulk acoustic wave resonator, a filter having the resonator, and an electronic device having the resonator or the filter.
  • FBAR Film Bulk Acoustic Resonator
  • BAW Bulk Acoustic Wave Resonator
  • SAW surface acoustic wave
  • the main structure of the film bulk acoustic wave resonator is a "sandwich" structure composed of electrode-piezoelectric film-electrode, that is, a layer of piezoelectric material is sandwiched between two metal electrode layers.
  • FBAR uses the inverse piezoelectric effect to convert the input electrical signal into mechanical resonance, and then uses the piezoelectric effect to convert the mechanical resonance into electrical signal output.
  • the frequency of the 5G communication band is 3GHz-6GHz, which is higher than 4G and other communication technologies.
  • the high operating frequency means that the film thickness, especially the film thickness of the electrode, must be further reduced; however, the main negative effect brought about by the reduction of the electrode film thickness is the resonator Q caused by the increase in electrical loss. The value decreases, especially the Q value near the series resonance point and its frequency.
  • the performance of the high-frequency bulk acoustic wave filter also deteriorates greatly as the Q value of the bulk acoustic wave resonator decreases.
  • a bulk acoustic wave resonator including:
  • the piezoelectric layer is arranged between the bottom electrode and the top electrode
  • the bottom electrode and/or the top electrode are gap electrodes, the gap electrode has a gap layer, the upper side of the gap layer has an upper electrode layer, and the lower side of the gap layer has a lower electrode layer, and the gap layer is in the thickness direction of the resonator.
  • the upper electrode layer and the lower electrode layer Arranged between the upper electrode layer and the lower electrode layer, the upper electrode layer and the lower electrode layer are electrically connected to each other in parallel at both ends of the gap layer;
  • One of the upper electrode layer and the lower electrode layer is an arc-shaped electrode layer having an arc away from the other electrode layer of the upper electrode layer and the lower electrode layer in the thickness direction of the resonator.
  • the embodiment of the present invention also relates to a filter including the above-mentioned bulk acoustic wave resonator.
  • the embodiment of the present invention also relates to an electronic device including the above-mentioned filter or the above-mentioned resonator.
  • Fig. 1 is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention
  • Fig. 2 is a schematic cross-sectional view taken along A1-A2 in Fig. 1 according to an exemplary embodiment of the present invention, wherein the top electrode is provided with a gap layer, and the upper electrode layer of the top electrode protrudes upward;
  • FIG. 3 is a schematic cross-sectional view taken along A1-A2 in FIG. 1 according to another exemplary embodiment of the present invention, wherein the top electrode is provided with a gap layer, and the bottom electrode layer of the top electrode protrudes downward;
  • FIG. 4 is a schematic cross-sectional view taken along A1-A2 in FIG. 1 according to an exemplary embodiment of the present invention, wherein the bottom electrode is provided with a gap layer, and the bottom electrode layer of the bottom electrode protrudes downward;
  • FIG. 5 is a schematic cross-sectional view taken along A1-A2 in FIG. 1 according to an exemplary embodiment of the present invention, wherein the bottom electrode is provided with a gap layer, and the upper electrode layer of the bottom electrode protrudes upward;
  • FIG. 6 is a schematic cross-sectional view taken along A1-A2 in FIG. 1 according to an exemplary embodiment of the present invention, wherein the bottom electrode is provided with a gap layer and the gap layer is used as an acoustic mirror structure, and the upper electrode layer of the bottom electrode is upward Raised
  • Fig. 7 is a schematic cross-sectional view taken along A1-A2 in Fig. 1 according to an exemplary embodiment of the present invention, wherein the bottom electrode and the top electrode are both provided with a gap layer;
  • FIG. 8 is a schematic diagram of possible contact situations of the upper and lower electrode layers of the gap electrode.
  • Fig. 1 is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention.
  • the reference signs are as follows:
  • Substrate, optional materials are silicon (high-resistance silicon), gallium arsenide, sapphire, quartz, etc.
  • Acoustic mirror which is cavity 20 in Figure 2-5, Bragg reflector and other equivalent forms can also be used.
  • the first bottom electrode, the material can be molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a combination of the above metals or their alloys, etc.
  • Electrode pin the material is the same as the first bottom electrode.
  • the second bottom electrode, the material selection range is the same as that of the first bottom electrode 30, but the specific material is not necessarily the same as that of the first bottom electrode 30.
  • Piezoelectric film layer optional aluminum nitride (AlN), zinc oxide (ZnO), lead zirconate titanate (PZT), lithium niobate (LiNbO 3 ), quartz (Quartz), potassium niobate (KNbO 3 ) Or lithium tantalate (LiTaO 3 ) and other materials may also contain rare earth element doped materials with a certain atomic ratio of the above materials.
  • the first top electrode, the material can be molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a combination of the above metals or their alloys.
  • Electrode pin the material is the same as the first top electrode.
  • 60 An air gap located in the top electrode, between the first top electrode 50 and the second top electrode 70.
  • the second bottom electrode, the material selection range is the same as that of the first top electrode 50, but the specific material is not necessarily the same as that of the first top electrode 50.
  • the air gap constitutes the void layer.
  • the void layer may be a vacuum gap layer, or a void layer filled with another gas medium, in addition to the air gap layer.
  • the void layer can be arranged in the top electrode, the bottom electrode, or the top electrode and the bottom electrode.
  • Fig. 1 shows a situation where the top electrode and the bottom electrode are both provided with a void layer.
  • FIG. 2 is a schematic cross-sectional view taken along A1-A2 in FIG. 1 according to an exemplary embodiment of the present invention, in which the top electrode is provided with a gap layer, and the upper electrode layer of the top electrode protrudes upward.
  • the resonator has double-layer top electrodes 50 and 70 (ie, the first top electrode 50 and the second top electrode 70).
  • the top electrode 70 covers the entire upper surface of the top electrode 50 and is on the non-electrode pin side. The pin side is kept in contact with the upper surface of the top electrode 50, thereby forming an air gap 60 between the top electrodes 70 and 50.
  • an alternating electric field is applied to the piezoelectric layer 40 through the electrodes. Due to the coupling and mutual conversion of acousto-electric energy, current will flow through the electrodes. Since the top electrode of this embodiment has a double-layer electrode parallel structure, It can effectively reduce the electrical loss of the resonator. Under the excitation of the alternating electric field, the piezoelectric layer generates sound waves. When the sound waves are conducted upwards to the interface between the air gap 60 and the electrode layer 50 in the top electrode, the sound wave energy will be reflected back to the piezoelectric layer 40 (because the air and the electrode The degree of acoustic impedance mismatch is extremely large), and will not enter the electrode layer 70.
  • the electrode structure containing the air gap in the present invention can significantly reduce the electrical loss of the resonator (indicated by increasing the Q value at and near the series resonance frequency).
  • the air gap plays an acoustic isolation effect on the top electrode 70, thereby basically avoiding the negative impact of the top electrode 70 on the performance of the resonator (such as changes in the resonance frequency and electromechanical coupling coefficient).
  • the height of the air gap is In the range. Further, the height of the air gap is greater than the typical amplitude of the resonator (about 10nm), for example, the height of the air gap is This facilitates the decoupling of acoustic energy between the top electrode 70 and the resonant cavity (in this embodiment, a composite structure composed of the top electrode 50, the piezoelectric layer 40, and the bottom electrode 30) when the resonator is working at high power.
  • FIG. 8 is a schematic diagram of possible contact situations of the upper and lower electrode layers of the gap electrode.
  • the air gap structure usually consists of depositing a sacrificial layer, such as phosphosilicate glass (such as PSG) combined with liquid etchant (such as liquid hydrofluoric acid) or gaseous etchant (such as gaseous hydrofluoric acid) and combined with a certain proportion of buffer substances (such as Ammonium fluoride) is released.
  • a sacrificial layer such as phosphosilicate glass (such as PSG) combined with liquid etchant (such as liquid hydrofluoric acid) or gaseous etchant (such as gaseous hydrofluoric acid) and combined with a certain proportion of buffer substances (such as Ammonium fluoride) is released.
  • a sacrificial layer such as phosphosilicate glass (such as PSG) combined with liquid etchant (such as liquid hydrofluoric acid) or gaseous etchant (such
  • the above-mentioned stress may cause the two layers of electrodes 50 and 70 used to form the air gap to adhere.
  • the sound wave energy will continue to escape from the sandwich structure to the top electrode 70 through the bonding interface CT in Figure 8 when the resonator is working, resulting in a decrease in Q value; at the same time, the bonding state will also An impedance mismatch area with an uncontrollable shape is formed, thereby generating a large number of spurious modes in the resonator; in addition, the attached state will also form a mass load and cause the frequency of the resonator to shift (frequency drop). Therefore, bonding may eventually lead to deterioration of the resonator performance.
  • the top electrode of the resonator of FIG. 2 has an air gap 60, and the first top electrode 50 (lower electrode layer) and the second top electrode 70 (upper electrode layer) are located on both sides of the air gap 60, where the second top electrode is under stress.
  • the top electrode 70 bulges upward and is away from the first top electrode 50, so as to avoid or reduce the possibility of being attached to the first top electrode 50.
  • the present invention proposes a resonator structure formed based on stress, in which the electrode layer or sandwich structure of the resonator is bent under the action of stress, and the electrodes on both sides used to form the air gap are far away from each other, thereby Suppress or avoid bonding of the electrodes.
  • the gap electrode structure of the present invention is realized based on stress and does not require additional materials and structures. On the one hand, it can avoid the negative effects of additional materials and structures on the acoustic performance of the resonator, and at the same time can reduce material costs and processes to improve production efficiency.
  • FIG. 3 is a schematic cross-sectional view taken along A1-A2 in FIG. 1 according to another exemplary embodiment of the present invention, in which the top electrode is provided with a gap layer, and the bottom electrode layer of the top electrode protrudes downward.
  • the top electrode of the resonator in FIG. 3 has an air gap 60, and the first top electrode 50 and the second top electrode 70 are located on both sides of the air gap 60.
  • the first top electrode 50 is recessed downward and away from the second top electrode 70 under the action of stress, so as to avoid or reduce the possibility of bonding with the second top electrode 70.
  • FIG. 4 is a schematic cross-sectional view taken along A1-A2 in FIG. 1 according to an exemplary embodiment of the present invention, wherein the bottom electrodes are all provided with a gap layer, and the bottom electrode layer of the bottom electrode protrudes downward.
  • the bottom electrode of the resonator in FIG. 4 has an air gap 61, and the first bottom electrode 30 and the second bottom electrode 31 are located on both sides of the air gap 61.
  • the first bottom electrode 30 is recessed downward and away from the second bottom electrode 31 under the action of stress, so as to avoid or reduce the possibility of bonding with the second bottom electrode 31.
  • Fig. 5 is a schematic cross-sectional view taken along A1-A2 in Fig. 1 according to an exemplary embodiment of the present invention, wherein the bottom electrodes are all provided with a gap layer, and the upper electrode layer of the bottom electrode protrudes upward.
  • the bottom electrode of the resonator in FIG. 5 has an air gap 61, and the first bottom electrode 30 and the second bottom electrode 31 are located on both sides of the air gap 61.
  • the sandwich structure composed of the second bottom electrode 31, the piezoelectric layer 40 and the top electrode 50 bulges upward and away from the first bottom electrode 30 as a whole, so as to avoid the second bottom electrode 31 and the first bottom electrode 30 Fitting occurs.
  • FIG. 6 is a schematic cross-sectional view taken along A1-A2 in FIG. 1 according to an exemplary embodiment of the present invention, wherein the bottom electrode is provided with a gap layer and the gap layer is used as an acoustic mirror structure, and the upper electrode layer of the bottom electrode is upward Raised.
  • the resonator structure of FIG. 6 no longer contains the acoustic mirror cavity 20, but uses the air gap 61 to reflect sound waves.
  • the second bottom electrode 31 can be made more stable during the stress deformation process.
  • Fig. 7 is a schematic cross-sectional view taken along A1-A2 in Fig. 1 according to an exemplary embodiment of the present invention, wherein the bottom electrode and the top electrode are both provided with a gap layer.
  • the top electrode and the bottom electrode in the resonator structure of FIG. 7 contain air gap structures 60 and 61, respectively, wherein the first bottom electrode 30 and the second bottom electrode 31 are located on both sides of the air gap 61, and the first top electrode 50 and The second top electrode 70 is located on both sides of the air gap 60. Under stress, the first bottom electrode 30 is recessed downward and away from the second bottom electrode 31, and the second top electrode 70 bulges upward and away from the first top electrode 50.
  • a void layer is provided in the top electrode and/or the bottom electrode of the bulk acoustic wave resonator.
  • the air gap located in the electrode can effectively reflect the sound wave, greatly reducing the sound wave energy entering the additional electrode on the side away from the piezoelectric film (or piezoelectric layer), thereby effectively suppressing or eliminating the additional electrode due to the participation in acoustic vibration. Negative effects.
  • the upper and lower electrodes enclosing the air gap can form a parallel circuit structure, which can effectively reduce the electrical loss of the resonator and increase the Q value of the resonator, especially the Q value at the series resonance point and near frequencies.
  • the additional electrode (the electrode layer far from the piezoelectric layer) is acoustically decoupled from the resonator cavity due to the existence of the air gap (most of the sound waves are reflected back to the cavity at the air gap and do not enter the additional electrode).
  • Existence and parameter changes do not affect other key parameters of the resonator except Q value (such as resonance frequency, electromechanical coupling coefficient, etc.).
  • the present invention avoids the parasitic series capacitance caused by the air gap, and the electromechanical coupling coefficient kt 2 of the resonator will not deteriorate; Compared with the structure in which silicon) is located between the two layers of electrodes, the air gap or vacuum gap of the present invention makes the resonant frequency of the resonator not change, other key parameters (Q value, electromechanical coupling coefficient) will not deteriorate, and the series resonance point and its vicinity The Q value at the frequency will be improved instead.
  • the electrode provided with the gap layer is a gap electrode.
  • the effective area of the resonator is the distance between the top electrode, the piezoelectric layer, the bottom electrode and the acoustic mirror in the thickness direction of the resonator. Overlapping area.
  • the effective area of the resonator is the overlap area of the top electrode, the bottom electrode, the piezoelectric layer, and the void layer of the bottom electrode in the thickness direction of the resonator.
  • the mentioned numerical range can be not only the endpoint value, but also the median value between the endpoint values or other values, all of which fall within the protection scope of the present invention.
  • the bulk acoustic wave resonator according to the present invention can be used to form a filter.
  • a bulk acoustic wave resonator including:
  • the piezoelectric layer is arranged between the bottom electrode and the top electrode
  • the bottom electrode and/or the top electrode are gap electrodes, the gap electrode has a gap layer, the upper side of the gap layer has an upper electrode layer, and the lower side of the gap layer has a lower electrode layer, and the gap layer is in the thickness direction of the resonator.
  • the upper electrode layer and the lower electrode layer Arranged between the upper electrode layer and the lower electrode layer, the upper electrode layer and the lower electrode layer are electrically connected to each other in parallel at both ends of the gap layer;
  • One of the upper electrode layer and the lower electrode layer is an arc-shaped electrode layer having an arc away from the other electrode layer of the upper electrode layer and the lower electrode layer in the thickness direction of the resonator.
  • the gap layer is an air gap layer or a vacuum gap layer.
  • the thickness of the void layer is In the range.
  • the thickness of the void layer is In the range.
  • the top electrode is a gap electrode.
  • the upper electrode layer is an arc-shaped electrode layer.
  • the lower electrode layer is an arc-shaped electrode layer.
  • the acoustic mirror is an acoustic mirror cavity
  • the bottom electrode has an arc shape that protrudes toward the cavity of the acoustic mirror.
  • the bottom electrode is a gap electrode.
  • the acoustic mirror is an acoustic mirror cavity
  • the lower electrode layer is an arc-shaped electrode layer protruding toward the cavity of the acoustic mirror.
  • the upper electrode layer is an arc-shaped electrode layer protruding toward the piezoelectric layer.
  • the top electrode has an arc shape corresponding to the shape of the upper electrode layer.
  • the acoustic mirror is an acoustic mirror cavity.
  • the void layer constitutes the acoustic mirror.
  • the bottom electrode and the top electrode are both gap electrodes.
  • the electrode layers of the two gap electrodes far away from the piezoelectric layer are all arc electrode layers protruding away from the piezoelectric layer.
  • a filter comprising the bulk acoustic wave resonator according to any one of 1-15.
  • An electronic device comprising the filter according to 16 or the resonator according to any one of 1-15.

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Abstract

本发明涉及一种体声波谐振器，包括：基底；声学镜；底电极；顶电极；和压电层，设置在底电极与顶电极之间，其中：底电极和/或顶电极为间隙电极，所述间隙电极具有空隙层，空隙层的上侧具有上电极层，空隙层的下侧具有下电极层，所述空隙层在谐振器的厚度方向上设置于所述上电极层与下电极层之间，上电极层与下电极层在空隙层的两端彼此并联电连接；上电极层和下电极层中的一个电极层为具有在谐振器的厚度方向上远离上电极层和下电极层中的另一个电极层的弧度的弧形电极层。本发明还涉及一种具有上述谐振器的滤波器以及具有该滤波器或谐振器的电子设备。

Description

电极具有空隙层的体声波谐振器、滤波器及电子设备 技术领域
本发明的实施例涉及半导体领域，尤其涉及一种体声波谐振器、一种具有该谐振器的滤波器，以及一种具有该谐振器或者该滤波器的电子设备。
背景技术
电子器件作为电子设备的基本元素，已经被广泛应用，其应用范围包括移动电话、汽车、家电设备等。此外，未来即将改变世界的人工智能、物联网、5G通讯等技术仍然需要依靠电子器件作为基础。
电子器件根据不同工作原理可以发挥不同的特性与优势，在所有电子器件中，利用压电效应(或逆压电效应)工作的器件是其中很重要一类，压电器件有着非常广泛的应用情景。薄膜体声波谐振器(Film Bulk Acoustic Resonator，简称FBAR，又称为体声波谐振器，也称BAW)作为压电器件的重要成员正在通信领域发挥着重要作用，特别是FBAR滤波器在射频滤波器领域市场占有份额越来越大，FBAR具有尺寸小、谐振频率高、品质因数高、功率容量大、滚降效应好等优良特性，其滤波器正在逐步取代传统的声表面波(SAW)滤波器和陶瓷滤波器，在无线通信射频领域发挥巨大作用，其高灵敏度的优势也能应用到生物、物理、医学等传感领域。
薄膜体声波谐振器的结构主体为由电极-压电薄膜-电极组成的“三明治”结构，即两层金属电极层之间夹一层压电材料。通过在两电极间输入正弦信号，FBAR利用逆压电效应将输入电信号转换为机械谐振，并且再利用压电效应将机械谐振转换为电信号输出。
通信技术的快速发展要求滤波器工作频率不断提高，例如5G通信频段(sub-6G)的频率在3GHz-6GHz,频率高于4G等通信技术。对于体声波谐振器和滤波器，高工作频率意味着薄膜厚度尤其是电极的薄膜厚度，要进一步减小；然而电极薄膜厚度的减小带来的主要负面效应为电学损耗增加导致的谐振器Q值降低，尤其是串联谐振点及其频率附近处的Q值降低； 相应地，高工作频率体声波滤波器的性能也随着体声波谐振器的Q值降低而大幅恶化。
发明内容
为缓解或解决现有技术中的上述问题的至少一个方面，提出本发明。
根据本发明的实施例的一个方面，提出了一种体声波谐振器，包括：
基底；
声学镜；
底电极；
顶电极；和
压电层，设置在底电极与顶电极之间，
其中：
底电极和/或顶电极为间隙电极，所述间隙电极具有空隙层，空隙层的上侧具有上电极层，空隙层的下侧具有下电极层，所述空隙层在谐振器的厚度方向上设置于所述上电极层与下电极层之间，上电极层与下电极层在空隙层的两端彼此并联电连接；
上电极层和下电极层中的一个电极层为具有在谐振器的厚度方向上远离上电极层和下电极层中的另一个电极层的弧度的弧形电极层。
本发明的实施例还涉及一种滤波器，包括上述的体声波谐振器。
本发明的实施例也涉及一种电子设备，包括上述的滤波器或者上述的谐振器。
附图说明
以下描述与附图可以更好地帮助理解本发明所公布的各种实施例中的这些和其他特点、优点，图中相同的附图标记始终表示相同的部件，其中：
图1为根据本发明的一个示例性实施例的体声波谐振器的俯视示意图；
图2为根据本发明的一个示例性实施例的沿图1中的A1-A2截得的 剖面示意图，其中顶电极设置有空隙层，顶电极的上电极层向上凸起；
图3为根据本发明的另一个示例性实施例的沿图1中的A1-A2截得的剖面示意图，其中顶电极设置有空隙层，顶电极的下电极层向下凸出；
图4为根据本发明的一个示例性实施例的沿图1中的A1-A2截得的剖面示意图，其中底电极均设置有空隙层，底电极的下电极层向下凸起；
图5为根据本发明的一个示例性实施例的沿图1中的A1-A2截得的剖面示意图，其中底电极均设置有空隙层，底电极的上电极层向上凸起；
图6为根据本发明的一个示例性实施例的沿图1中的A1-A2截得的剖面示意图，其中底电极设置有空隙层且该空隙层作为声学镜结构，底电极的上电极层向上凸起；
图7为根据本发明的一个示例性实施例的沿图1中的A1-A2截得的剖面示意图，其中底电极和顶电极均设置有空隙层；
图8为间隙电极的上下电极层可能出现的接触的情况的示意图。
具体实施方式
下面通过实施例，并结合附图，对本发明的技术方案作进一步具体的说明。在说明书中，相同或相似的附图标号指示相同或相似的部件。下述参照附图对本发明实施方式的说明旨在对本发明的总体发明构思进行解释，而不应当理解为对本发明的一种限制。
图1为根据本发明的一个示例性实施例的体声波谐振器的俯视示意图。在图1中，各附图标记如下：
10：基底，可选材料为硅(高阻硅)、砷化镓、蓝宝石、石英等。
20：声学镜，在图2-5中为空腔20，也可采用布拉格反射层及其他等效形式。
30：第一底电极，材料可选钼、钌、金、铝、镁、钨、铜，钛、铱、锇、铬或以上金属的复合或其合金等。
36：电极引脚，材料与第一底电极相同。
31：第二底电极，材料选择范围同第一底电极30，但具体材料不一 定与第一底电极30相同。
40：压电薄膜层，可选氮化铝(AlN)、氧化锌(ZnO)、锆钛酸铅(PZT)、铌酸锂(LiNbO 3)、石英(Quartz)、铌酸钾(KNbO 3)或钽酸锂(LiTaO 3)等材料，也可包含上述材料的一定原子比的稀土元素掺杂材料。
50：第一顶电极，材料可选钼、钌、金、铝、镁、钨、铜，钛、铱、锇、铬或以上金属的复合或其合金等。
56：电极引脚，材料与第一顶电极相同。
60：位于顶电极之中的空气间隙，处于第一顶电极50和第二顶电极70之间。
70：第二底电极，材料选择范围同第一顶电极50，但具体材料不一定与第一顶电极50相同。
需要说明的是，空气间隙构成空隙层，但是本发明中，空隙层除了可以为空气间隙层之外，还可以是真空间隙层，也可以是填充了其他气体介质的空隙层。
空隙层可以设置在顶电极内，也可以设置在底电极内，或者设置在顶电极与底电极内。图1中示出了顶电极与底电极均设置空隙层的情形。
图2为根据本发明的一个示例性实施例的沿图1中的A1-A2截得的剖面示意图，其中顶电极设置有空隙层，顶电极的上电极层向上凸起。
如图2所示，该谐振器具有双层顶电极50和70(即第一顶电极50与第二顶电极70)，顶电极70覆盖顶电极50的整个上表面同时在非电极引脚侧和引脚侧与顶电极50上表面保持接触，从而在顶电极70和50之间形成空气间隙60。
当谐振器工作时，交变电场通过电极施加在压电层40上，由于声电能量耦合并相互转化，电极中会有电流通过，由于本实施例的顶电极具有双层电极并联结构，因此可以有效减小谐振器的电学损耗。在交变电场的激励下，压电层产生声波，当声波向上方传导至位于顶电极中的空气间隙60和电极层50的界面时声波能量会被反射回压电层40(因为空气和电极的声阻抗不匹配程度极大)，并不会进入电极层70。本发明中含有空气间 隙的电极结构一方面可显著降低谐振器的电学损耗(表现为提升串联谐振频率处及其附近Q值的提高)。另一方面，空气间隙对顶电极70起到了声学隔离作用，从而基本避免顶电极70对谐振器性能造成的负面影响(如谐振频率和机电耦合系数的改变)。
可选的，空气间隙的高度在
Figure PCTCN2020088700-appb-000001
的范围内。进一步的，空气间隙的高度大于谐振器的典型振幅(约10nm)，例如空气间隙的高度在
Figure PCTCN2020088700-appb-000002
的范围内，这有利于谐振器在大功率工作时顶电极70与谐振腔(此实施例为顶电极50、压电层40、底电极30组成的复合结构)的声学能量解耦。
图8为间隙电极的上下电极层可能出现的接触的情况的示意图。空气间隙结构，通常由沉积牺牲层，如磷硅玻璃(如PSG)结合液态刻蚀剂(如液态氢氟酸)或者气态刻蚀剂(如气态氢氟酸)并结合一定比例缓冲物质(如氟化铵)进行释放得到。在形成谐振器各结构层过程中，可能会在结构中堆积结构应力，此外，刻蚀剂与牺牲层反应过程中还会产生可观的热量从而形成热应力，因此，当牺牲层被刻蚀剂消耗掉之后，上述应力可能导致用于形成空气间隙的两层电极50和70发生贴合。当发生贴合时，在谐振器工作的情况下，声波能量会不断通过图8中的贴合界面CT从三明治结构中逸散到顶电极70中，导致Q值下降；同时，贴合状态还会形成形状不可控的阻抗失配区域，从而在谐振器中生成大量寄生模式；另外贴合状态还会形成质量负载导致谐振器频率偏移(频率下降)。因此，贴合有可能最终导致谐振器性能发生恶化。
图2的谐振器的顶电极具有空气间隙60，第一顶电极50(下电极层)和第二顶电极70(上电极层)位于空气间隙60两侧，其中，在应力的作用下第二顶电极70向上隆起并远离第一顶电极50，从而避免或降低与第一顶电极50贴合的可能。
因此，本发明提出一种基于应力形成的谐振器结构，在该结构中谐振器的电极层或三明治结构在应力的作用下发生弯曲，并使用于形成空气间隙的两侧电极相互远离对方，从而抑制或避免电极发生贴合。
本发明的间隙电极结构基于应力实现，无需附加材料和结构，一方 面可以避免附加材料和结构对谐振器的声学性能造成负面影响，同时可降低材料成本并减少工序提高生产效率。
图3为根据本发明的另一个示例性实施例的沿图1中的A1-A2截得的剖面示意图，其中顶电极设置有空隙层，顶电极的下电极层向下凸出。图3的谐振器的顶电极具有空气间隙60，第一顶电极50和第二顶电极70位于空气间隙60两侧。其中，在应力的作用下第一顶电极50向下凹陷并远离第二顶电极70，从而避免或降低与第二顶电极70贴合的可能。
图4为根据本发明的一个示例性实施例的沿图1中的A1-A2截得的剖面示意图，其中底电极均设置有空隙层，底电极的下电极层向下凸起。图4的谐振器底电极具有空气间隙61，第一底电极30和第二底电极31位于空气间隙61两侧。其中，在应力的作用下第一底电极30向下凹陷并远离第二底电极31，从而避免或降低与第二底电极31贴合的可能。
图5为根据本发明的一个示例性实施例的沿图1中的A1-A2截得的剖面示意图，其中底电极均设置有空隙层，底电极的上电极层向上凸起。图5的谐振器底电极具有空气间隙61，第一底电极30和第二底电极31位于空气间隙61两侧。其中，在应力的作用下由第二底电极31、压电层40和顶电极50组成的三明治结构整体向上隆起并远离第一底电极30，从而避免第二底电极31和第一底电极30发生贴合。
图6为根据本发明的一个示例性实施例的沿图1中的A1-A2截得的剖面示意图，其中底电极设置有空隙层且该空隙层作为声学镜结构，底电极的上电极层向上凸起。图6的谐振器结构中不再含有声学镜空腔20，而是利用空气间隙61反射声波。此外，由于第一底电极30与基底10的接触面积变大，在应力形变过程中可使第二底电极31更为稳固。
图7为根据本发明的一个示例性实施例的沿图1中的A1-A2截得的剖面示意图，其中底电极和顶电极均设置有空隙层。图7的谐振器结构中顶电极与底电极中分别含有空气间隙结构60和61，其中，第一底电极30和第二底电极31位于空气间隙61的两侧，而第一顶电极50和第二顶电极70位于空气间隙60两侧。在应力作用下，第一底电极30向下凹陷并远离第二底电极31，第二顶电极70向上隆起并远离第一顶电极50。
在本发明中，在体声波谐振器的顶电极和/或底电极中设置空隙层。位于电极中的空气间隙可有效的反射声波，大幅降低进入远离压电薄膜(或压电层)一侧的附加电极的声波能量，从而有效抑制或消除所述附加电极由于参与声学振动所带来的负面效应。另外，围成空气间隙的上下电极可以构成并联电路结构，这可有效降低谐振器的电学损耗，提高谐振器的Q值，尤其是串联谐振点及其附近频率处的Q值。
因此，附加电极(远离压电层的电极层)由于空气间隙的存在从而与谐振器谐振腔声学解耦(绝大部分声波在空气间隙处反射回谐振腔，不进入附加电极)，附加电极的存在和参数变化不影响谐振器除Q值外的其他关键参数(如谐振频率，机电耦合系数等)。
与空气间隙位于压电层和电极之间的结构相比，本发明由于避免了空气间隙带来的寄生串联电容，谐振器的机电耦合系数kt 2不会恶化；与温度补偿夹层(如二氧化硅)位于两层电极中间的结构相比，本发明的空气间隙或真空间隙使得谐振器谐振频率不会变化，其他关键参数(Q值、机电耦合系数)不会恶化，串联谐振点及其附近频率处的Q值反而会得到提升。
在本发明中，设置了空隙层的电极为间隙电极。
在本发明中，当声学镜结构设置于基底中且底电极中并未设置空隙层时，谐振器的有效区域为顶电极、压电层、底电极与声学镜在谐振器的厚度方向上的重叠区域。
在本发明中，在底电极中设置有空隙层时，谐振器的有效区域为顶电极、底电极、压电层和底电极的空隙层在谐振器的厚度方向上的重叠区域
在本发明中，提到的数值范围除了可以为端点值之外，还可以为端点值之间的中值或者其他值，均在本发明的保护范围之内。
如本领域技术人员能够理解的，根据本发明的体声波谐振器可以用于形成滤波器。
基于以上，本发明提出了如下技术方案：
1、一种体声波谐振器，包括：
基底；
声学镜；
底电极；
顶电极；和
压电层，设置在底电极与顶电极之间，
其中：
底电极和/或顶电极为间隙电极，所述间隙电极具有空隙层，空隙层的上侧具有上电极层，空隙层的下侧具有下电极层，所述空隙层在谐振器的厚度方向上设置于所述上电极层与下电极层之间，上电极层与下电极层在空隙层的两端彼此并联电连接；
上电极层和下电极层中的一个电极层为具有在谐振器的厚度方向上远离上电极层和下电极层中的另一个电极层的弧度的弧形电极层。
2、根据1所述的谐振器，其中：
所述空隙层为空气间隙层或者真空间隙层。
3、根据1所述的谐振器，其中：
所述空隙层的厚度在
Figure PCTCN2020088700-appb-000003
的范围内。
4、根据3所述的谐振器，其中：
所述空隙层的厚度在
Figure PCTCN2020088700-appb-000004
的范围内。
5、根据1-4中任一项所述的谐振器，其中：
所述顶电极为间隙电极。
6、根据5所述的谐振器，其中：
所述上电极层为弧形电极层。
7、根据5所述的谐振器，其中：
所述下电极层为弧形电极层。
8、根据7所述的谐振器，其中：
所述声学镜为声学镜空腔；
所述底电极具有朝向声学镜空腔内凸出的弧形。
9、根据1-4中任一项所述的谐振器，其中：
所述底电极为间隙电极。
10、根据9所述的谐振器，其中：
所述声学镜为声学镜空腔；
所述下电极层为朝向声学镜空腔内凸出的弧形电极层。
11、根据9所述的谐振器，其中：
所述上电极层为朝向压电层凸出的弧形电极层。
12、根据11所述的谐振器，其中：
所述顶电极具有对应于上电极层的形状的弧形。
13、根据11所述的谐振器，其中：
所述声学镜为声学镜空腔。
14、根据11所述的谐振器，其中：
所述空隙层构成所述声学镜。
15、根据1-4中任一项所述的谐振器，其中：
所述底电极和顶电极均为间隙电极；且
两个间隙电极的远离压电层的电极层均为远离压电层凸出的弧形电极层。
16、一种滤波器，包括根据1-15中任一项所述的体声波谐振器。
17、一种电子设备，包括根据16所述的滤波器或者根据1-15中任一项所述的谐振器。
尽管已经示出和描述了本发明的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行变化，本发明的范围由所附权利要求及其等同物限定。

Claims (17)

  1. 一种体声波谐振器，包括：
    基底；
    声学镜；
    底电极；
    顶电极；和
    压电层，设置在底电极与顶电极之间，
    其中：
    底电极和/或顶电极为间隙电极，所述间隙电极具有空隙层，空隙层的上侧具有上电极层，空隙层的下侧具有下电极层，所述空隙层在谐振器的厚度方向上设置于所述上电极层与下电极层之间，上电极层与下电极层在空隙层的两端彼此并联电连接；
    上电极层和下电极层中的一个电极层为具有在谐振器的厚度方向上远离上电极层和下电极层中的另一个电极层的弧度的弧形电极层。
  2. 根据权利要求1所述的谐振器，其中：
    所述空隙层为空气间隙层或者真空间隙层。
  3. 根据权利要求1所述的谐振器，其中：
    所述空隙层的厚度在
    Figure PCTCN2020088700-appb-100001
    的范围内。
  4. 根据权利要求3所述的谐振器，其中：
    所述空隙层的厚度在
    Figure PCTCN2020088700-appb-100002
    的范围内。
  5. 根据权利要求1-4中任一项所述的谐振器，其中：
    所述顶电极为间隙电极。
  6. 根据权利要求5所述的谐振器，其中：
    所述上电极层为弧形电极层。
  7. 根据权利要求5所述的谐振器，其中：
    所述下电极层为弧形电极层。
  8. 根据权利要求7所述的谐振器，其中：
    所述声学镜为声学镜空腔；
    所述底电极具有朝向声学镜空腔内凸出的弧形。
  9. 根据权利要求1-4中任一项所述的谐振器，其中：
    所述底电极为间隙电极。
  10. 根据权利要求9所述的谐振器，其中：
    所述声学镜为声学镜空腔；
    所述下电极层为朝向声学镜空腔内凸出的弧形电极层。
  11. 根据权利要求9所述的谐振器，其中：
    所述上电极层为朝向压电层凸出的弧形电极层。
  12. 根据权利要求11所述的谐振器，其中：
    所述顶电极具有对应于上电极层的形状的弧形。
  13. 根据权利要求11所述的谐振器，其中：
    所述声学镜为声学镜空腔。
  14. 根据权利要求11所述的谐振器，其中：
    所述空隙层构成所述声学镜。
  15. 根据权利要求1-4中任一项所述的谐振器，其中：
    所述底电极和顶电极均为间隙电极；且
    两个间隙电极的远离压电层的电极层均为远离压电层凸出的弧形电极层。
  16. 一种滤波器，包括根据权利要求1-15中任一项所述的体声波谐振器。
  17. 一种电子设备，包括根据权利要求16所述的滤波器或者根据权利要求1-15中任一项所述的谐振器。
PCT/CN2020/088700 2019-12-11 2020-05-06 电极具有空隙层的体声波谐振器、滤波器及电子设备 WO2021114555A1 (zh)

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111010123B (zh) * 2019-10-23 2021-06-01 诺思(天津)微系统有限责任公司 电极具有空隙层和凸起结构的体声波谐振器、滤波器及电子设备
CN111082776B (zh) * 2019-12-11 2021-06-01 诺思(天津)微系统有限责任公司 电极具有空隙层的体声波谐振器、滤波器及电子设备
CN114257196A (zh) * 2020-09-21 2022-03-29 中芯集成电路（宁波）有限公司上海分公司 一种薄膜体声波谐振器的制造方法
CN115276598A (zh) * 2021-04-30 2022-11-01 诺思(天津)微系统有限责任公司 体声波谐振器及制造方法、滤波器及电子设备
CN115412050A (zh) * 2021-05-26 2022-11-29 诺思(天津)微系统有限责任公司 包括碳化硅基底的体声波谐振器、滤波器及电子设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020121840A1 (en) * 2001-03-05 2002-09-05 Larson John D. Method of providing differential frequency adjusts in a thin film bulk acoustic resonator (FBAR) filter and apparatus embodying the method
CN109756201A (zh) * 2019-03-26 2019-05-14 深圳华远微电科技有限公司 薄膜体声波谐振器和滤波器
CN110166018A (zh) * 2018-02-13 2019-08-23 三星电机株式会社 体声波谐振器
CN111082776A (zh) * 2019-12-11 2020-04-28 诺思(天津)微系统有限责任公司 电极具有空隙层的体声波谐振器、滤波器及电子设备

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4707533B2 (ja) * 2005-10-27 2011-06-22 太陽誘電株式会社 圧電薄膜共振器およびフィルタ
JP5322597B2 (ja) * 2008-11-13 2013-10-23 太陽誘電株式会社 共振子、フィルタ、デュープレクサおよび電子装置
US8384497B2 (en) * 2009-12-18 2013-02-26 Hao Zhang Piezoelectric resonator structure having an interference structure
US9479139B2 (en) * 2010-04-29 2016-10-25 Avago Technologies General Ip (Singapore) Pte. Ltd. Resonator device including electrode with buried temperature compensating layer
US9608192B2 (en) * 2013-03-28 2017-03-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Temperature compensated acoustic resonator device
CN103532516B (zh) * 2013-08-05 2017-10-24 天津大学 体波谐振器及其制造方法
US9608594B2 (en) * 2014-05-29 2017-03-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Capacitive coupled resonator device with air-gap separating electrode and piezoelectric layer
US9948272B2 (en) * 2015-09-10 2018-04-17 Qorvo Us, Inc. Air gap in BAW top metal stack for reduced resistive and acoustic loss
US20180183405A1 (en) * 2016-12-23 2018-06-28 Avago Technologies General Ip (Singapore) Pte. Ltd Bulk baw resonator having electrically insulating substrate
JP7447372B2 (ja) * 2018-05-17 2024-03-12 サムソン エレクトロ－メカニックス カンパニーリミテッド． バルク音響共振器及びその製造方法
CN111193489B (zh) * 2018-11-14 2024-01-26 天津大学 体声波谐振器、滤波器和电子设备

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020121840A1 (en) * 2001-03-05 2002-09-05 Larson John D. Method of providing differential frequency adjusts in a thin film bulk acoustic resonator (FBAR) filter and apparatus embodying the method
CN110166018A (zh) * 2018-02-13 2019-08-23 三星电机株式会社 体声波谐振器
CN109756201A (zh) * 2019-03-26 2019-05-14 深圳华远微电科技有限公司 薄膜体声波谐振器和滤波器
CN111082776A (zh) * 2019-12-11 2020-04-28 诺思(天津)微系统有限责任公司 电极具有空隙层的体声波谐振器、滤波器及电子设备

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP4113838A4 *

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