JP2008530874A - 高周波弾性波装置 - Google Patents
高周波弾性波装置 Download PDFInfo
- Publication number
- JP2008530874A JP2008530874A JP2007554623A JP2007554623A JP2008530874A JP 2008530874 A JP2008530874 A JP 2008530874A JP 2007554623 A JP2007554623 A JP 2007554623A JP 2007554623 A JP2007554623 A JP 2007554623A JP 2008530874 A JP2008530874 A JP 2008530874A
- Authority
- JP
- Japan
- Prior art keywords
- elastic wave
- reflector
- piezoelectric film
- acoustic wave
- wave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005284 excitation Effects 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 16
- 210000001520 comb Anatomy 0.000 claims description 7
- 239000006185 dispersion Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 2
- 230000010356 wave oscillation Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 41
- 238000010897 surface acoustic wave method Methods 0.000 description 14
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 230000001902 propagating effect Effects 0.000 description 4
- 239000012528 membrane Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 244000126211 Hericium coralloides Species 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02228—Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Abstract
Description
アービィ, J. H. ら(Irby, J. H., et al.)、「弾性波誘導分布ブラッグ反射器(ADBR)についてのデルタN2及びカッパの計算(Calculation of DeltaN2 and Kappa for an Acoustically Induced Distribution Bragg Reflector (ADBR))」、IEEEジャーナル:量子エレクトロニクス(IEEE Journal of Quantum Electronics)、IEEE Inc. ニューヨーク、アメリカ合衆国、第34巻、第2号、1998年2月(1998−02)、213−224ページ、XP000737230、ISSN:0018−9197
Claims (7)
- 弾性波装置において、
無指向性の弾性波反射器(32)上の圧電膜(41)と、
圧電膜の表面上にあり、弾性波反射器の帯域内の波を励振することができる励振及び/又は受容手段(43, 44)と
を備えることを特徴とする装置。 - 励振/受容手段(43, 44)は交互嵌合した導伝性の櫛であることを特徴とする請求項1に記載の装置。
- 無指向性の弾性波反射器(32)は、高い弾性波インピーダンスの膜と低い弾性波インピーダンスの膜とを交互に積み重ねて形成されていることを特徴とする請求項1に記載の装置。
- 請求項1に記載の装置のフィルタとしての使用。
- 請求項1に記載の装置の共振器としての使用。
- 請求項1に記載の装置の遅延線としての使用。
- 弾性波反射器上に圧電膜を有する弾性波装置を画定する方法において、
所定の基板上に弾性波反射器を形成する所定の一対の材料について、分散曲線を算出するステップと、
一対の材料が所望の周波数帯に帯域を有する無指向性の反射器を形成するように、一対の材料の各材料の膜厚の合計値を選択するステップと、
反射器が無指向性を維持し、且つ圧電膜が反射器の周波数帯域内に弾性波振動モードを有するように、圧電膜の厚さを選択するステップと
を含むことを特徴とする方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0550442 | 2005-02-16 | ||
FR0550442A FR2882205B1 (fr) | 2005-02-16 | 2005-02-16 | Dispositif a ondes acoustiques haute frequence |
PCT/FR2006/050142 WO2006087496A1 (fr) | 2005-02-16 | 2006-02-16 | Dispositif a ondes acoustiques haute frequence |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008530874A true JP2008530874A (ja) | 2008-08-07 |
JP5046961B2 JP5046961B2 (ja) | 2012-10-10 |
Family
ID=34979253
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007554623A Active JP5046961B2 (ja) | 2005-02-16 | 2006-02-16 | 高周波弾性波装置 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7880563B2 (ja) |
EP (1) | EP1854210B8 (ja) |
JP (1) | JP5046961B2 (ja) |
FR (1) | FR2882205B1 (ja) |
WO (1) | WO2006087496A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012086441A1 (ja) * | 2010-12-24 | 2012-06-28 | 株式会社村田製作所 | 弾性波装置及びその製造方法 |
KR20200007963A (ko) | 2017-06-23 | 2020-01-22 | 가부시키가이샤 무라타 세이사쿠쇼 | 탄성파 장치, 고주파 프론트엔드 회로 및 통신 장치 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2882205B1 (fr) * | 2005-02-16 | 2007-06-22 | Centre Nat Rech Scient | Dispositif a ondes acoustiques haute frequence |
US7939987B1 (en) * | 2008-10-23 | 2011-05-10 | Triquint Semiconductor, Inc. | Acoustic wave device employing reflective elements for confining elastic energy |
FR2940450B1 (fr) * | 2008-12-22 | 2011-02-18 | Centre Nat Rech Scient | Dispositif et procede pour etudier une zone d'etude par onde acoustique |
FR2947398B1 (fr) * | 2009-06-30 | 2013-07-05 | Commissariat Energie Atomique | Dispositif resonant a ondes acoustiques guidees et procede de realisation du dispositif |
GB0914762D0 (en) | 2009-08-24 | 2009-09-30 | Univ Glasgow | Fluidics apparatus and fluidics substrate |
EP2658123B1 (en) | 2010-12-24 | 2019-02-13 | Murata Manufacturing Co., Ltd. | Elastic wave device and method for manufacturing the same. |
GB201103211D0 (en) | 2011-02-24 | 2011-04-13 | Univ Glasgow | Fluidics apparatus, use of fluidics apparatus and process for the manufacture of fluidics apparatus |
US9405036B2 (en) | 2011-11-04 | 2016-08-02 | Schlumberger Technology Corporation | Multiphysics NMR logging techniques for the determination of in situ total gas in gas reservoirs |
FR2997027B1 (fr) | 2012-10-19 | 2015-01-02 | Centre Nat Rech Scient | Transducteur a ondes de volume guidees en suface par des structures d'excitation synchrone |
US9379686B2 (en) * | 2014-03-04 | 2016-06-28 | Qualcomm Incorporated | Resonator with a staggered electrode configuration |
GB201420061D0 (en) | 2014-11-11 | 2014-12-24 | Univ Glasgow | Nebulisation of liquids |
CN107408936B (zh) | 2015-03-16 | 2020-12-11 | 株式会社村田制作所 | 弹性波装置及其制造方法 |
JP2017224890A (ja) * | 2016-06-13 | 2017-12-21 | 株式会社村田製作所 | 弾性波装置 |
JP2019145895A (ja) * | 2018-02-16 | 2019-08-29 | 株式会社村田製作所 | 弾性波装置、マルチプレクサ、高周波フロントエンド回路及び通信装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4427913A (en) * | 1981-06-01 | 1984-01-24 | The United States Of America As Represented By The Secretary Of The Army | Acoustic diffractometer |
Family Cites Families (12)
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---|---|---|---|---|
US4037176A (en) * | 1975-03-18 | 1977-07-19 | Matsushita Electric Industrial Co., Ltd. | Multi-layered substrate for a surface-acoustic-wave device |
JPS54108551A (en) * | 1978-02-14 | 1979-08-25 | Matsushita Electric Ind Co Ltd | Elastic surface wave device |
US4494091A (en) * | 1983-05-09 | 1985-01-15 | The United States Of America As Represented By The Secretary Of The Army | Damping package for surface acoustic wave devices |
DE3731309A1 (de) * | 1987-09-17 | 1989-03-30 | Siemens Ag | Oberflaechenwellenanordnung mit konversionsstruktur zur vermeidung unerwuenschter reflektierter wellen |
US5873154A (en) * | 1996-10-17 | 1999-02-23 | Nokia Mobile Phones Limited | Method for fabricating a resonator having an acoustic mirror |
US6720844B1 (en) * | 2001-11-16 | 2004-04-13 | Tfr Technologies, Inc. | Coupled resonator bulk acoustic wave filter |
DE10251876B4 (de) * | 2002-11-07 | 2008-08-21 | Infineon Technologies Ag | BAW-Resonator mit akustischem Reflektor und Filterschaltung |
US6963257B2 (en) * | 2004-03-19 | 2005-11-08 | Nokia Corporation | Coupled BAW resonator based duplexers |
FR2882205B1 (fr) * | 2005-02-16 | 2007-06-22 | Centre Nat Rech Scient | Dispositif a ondes acoustiques haute frequence |
DE102005057762A1 (de) * | 2005-12-02 | 2007-06-06 | Epcos Ag | Mit akustischen Volumenwellen arbeitender Resonator |
DE102005061344A1 (de) * | 2005-12-21 | 2007-06-28 | Epcos Ag | Mit akustischen Volumenwellen arbeitender Resonator |
JP2007312164A (ja) * | 2006-05-19 | 2007-11-29 | Hitachi Ltd | 圧電薄膜共振器並びにそれを用いた高周波フィルタ及び高周波モジュール |
-
2005
- 2005-02-16 FR FR0550442A patent/FR2882205B1/fr active Active
-
2006
- 2006-02-16 US US11/884,499 patent/US7880563B2/en active Active
- 2006-02-16 WO PCT/FR2006/050142 patent/WO2006087496A1/fr active Application Filing
- 2006-02-16 EP EP06709521.6A patent/EP1854210B8/fr active Active
- 2006-02-16 JP JP2007554623A patent/JP5046961B2/ja active Active
-
2011
- 2011-01-28 US US13/016,372 patent/US8138856B2/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4427913A (en) * | 1981-06-01 | 1984-01-24 | The United States Of America As Represented By The Secretary Of The Army | Acoustic diffractometer |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012086441A1 (ja) * | 2010-12-24 | 2012-06-28 | 株式会社村田製作所 | 弾性波装置及びその製造方法 |
JPWO2012086441A1 (ja) * | 2010-12-24 | 2014-05-22 | 株式会社村田製作所 | 弾性波装置及びその製造方法 |
JP5648695B2 (ja) * | 2010-12-24 | 2015-01-07 | 株式会社村田製作所 | 弾性波装置及びその製造方法 |
US9780759B2 (en) | 2010-12-24 | 2017-10-03 | Murata Manufacturing Co., Ltd. | Elastic wave device and method for manufacturing the same |
KR20200007963A (ko) | 2017-06-23 | 2020-01-22 | 가부시키가이샤 무라타 세이사쿠쇼 | 탄성파 장치, 고주파 프론트엔드 회로 및 통신 장치 |
US11309862B2 (en) | 2017-06-23 | 2022-04-19 | Murata Manufacturing Co., Ltd | Acoustic wave device, high frequency front end circuit, and communication apparatus |
Also Published As
Publication number | Publication date |
---|---|
US20110133859A1 (en) | 2011-06-09 |
FR2882205B1 (fr) | 2007-06-22 |
US8138856B2 (en) | 2012-03-20 |
US20080211602A1 (en) | 2008-09-04 |
EP1854210A1 (fr) | 2007-11-14 |
EP1854210B8 (fr) | 2019-12-04 |
EP1854210B1 (fr) | 2019-07-31 |
US7880563B2 (en) | 2011-02-01 |
FR2882205A1 (fr) | 2006-08-18 |
WO2006087496A1 (fr) | 2006-08-24 |
JP5046961B2 (ja) | 2012-10-10 |
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