JPS58139399A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPS58139399A
JPS58139399A JP57021130A JP2113082A JPS58139399A JP S58139399 A JPS58139399 A JP S58139399A JP 57021130 A JP57021130 A JP 57021130A JP 2113082 A JP2113082 A JP 2113082A JP S58139399 A JPS58139399 A JP S58139399A
Authority
JP
Japan
Prior art keywords
data
circuit
signal
information
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57021130A
Other languages
English (en)
Japanese (ja)
Inventor
Koji Shinoda
篠田　孝司
Osamu Sakai
修 酒井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57021130A priority Critical patent/JPS58139399A/ja
Priority to FR828221896A priority patent/FR2521761B1/fr
Priority to GB08301289A priority patent/GB2116389B/en
Priority to KR1019830000586A priority patent/KR900004813B1/ko
Priority to DE3305056A priority patent/DE3305056C2/de
Priority to IT19579/83A priority patent/IT1161895B/it
Priority to US06/466,483 priority patent/US4703453A/en
Priority to FR838307126A priority patent/FR2522183B1/fr
Publication of JPS58139399A publication Critical patent/JPS58139399A/ja
Priority to GB08510570A priority patent/GB2157038B/en
Priority to US07/037,048 priority patent/US4817052A/en
Priority to SG41187A priority patent/SG41187G/en
Priority to HK699/87A priority patent/HK69987A/xx
Priority to MY643/87A priority patent/MY8700643A/xx
Priority to US07/326,653 priority patent/US4943967A/en
Priority to US07/767,363 priority patent/US5177743A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1076—Parity data used in redundant arrays of independent storages, e.g. in RAID systems
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G11C17/126—Virtual ground arrays

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
JP57021130A 1982-02-15 1982-02-15 半導体記憶装置 Pending JPS58139399A (ja)

Priority Applications (15)

Application Number Priority Date Filing Date Title
JP57021130A JPS58139399A (ja) 1982-02-15 1982-02-15 半導体記憶装置
FR828221896A FR2521761B1 (fr) 1982-02-15 1982-12-28 Memoire a semi-conducteurs
GB08301289A GB2116389B (en) 1982-02-15 1983-01-18 A semiconductor memory
KR1019830000586A KR900004813B1 (ko) 1982-02-15 1983-02-14 반도체 기억장치
DE3305056A DE3305056C2 (de) 1982-02-15 1983-02-14 Halbleiterspeicher
IT19579/83A IT1161895B (it) 1982-02-15 1983-02-14 Memoria a semiconduttori
US06/466,483 US4703453A (en) 1982-02-15 1983-02-15 Semiconductor memory with an improved dummy cell arrangement and with a built-in error correcting code circuit
FR838307126A FR2522183B1 (fr) 1982-02-15 1983-04-29 Memoire a semi-conducteurs
GB08510570A GB2157038B (en) 1982-02-15 1985-04-25 A semiconductor memory
US07/037,048 US4817052A (en) 1982-02-15 1987-04-10 Semiconductor memory with an improved dummy cell arrangement and with a built-in error correcting code circuit
SG41187A SG41187G (en) 1982-02-15 1987-05-06 A semiconductor memory
HK699/87A HK69987A (en) 1982-02-15 1987-09-24 A semiconductor memory
MY643/87A MY8700643A (en) 1982-02-15 1987-12-30 A semiconductor memory
US07/326,653 US4943967A (en) 1982-02-15 1989-03-21 Semiconductor memory with an improved dummy cell arrangement and with a built-in error correction code circuit
US07/767,363 US5177743A (en) 1982-02-15 1991-09-30 Semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57021130A JPS58139399A (ja) 1982-02-15 1982-02-15 半導体記憶装置

Publications (1)

Publication Number Publication Date
JPS58139399A true JPS58139399A (ja) 1983-08-18

Family

ID=12046302

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57021130A Pending JPS58139399A (ja) 1982-02-15 1982-02-15 半導体記憶装置

Country Status (8)

Country Link
US (2) US4703453A (fr)
JP (1) JPS58139399A (fr)
KR (1) KR900004813B1 (fr)
DE (1) DE3305056C2 (fr)
FR (2) FR2521761B1 (fr)
GB (2) GB2116389B (fr)
HK (1) HK69987A (fr)
IT (1) IT1161895B (fr)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6046000A (ja) * 1983-08-23 1985-03-12 Nec Corp ビット訂正付きプログラマブルリ−ドオンリィメモリ
JPS6069900A (ja) * 1983-09-22 1985-04-20 Seiko Epson Corp リ−ドオンリ−メモリ−
JPS60201599A (ja) * 1984-03-26 1985-10-12 Hitachi Ltd 半導体集積回路装置
JPS61123100A (ja) * 1984-11-20 1986-06-10 Fujitsu Ltd 半導体記憶装置
JPS6246357A (ja) * 1985-08-23 1987-02-28 Hitachi Vlsi Eng Corp 半導体記憶装置
JP2003077294A (ja) * 2001-08-31 2003-03-14 Mitsubishi Electric Corp メモリ回路
JP2006179057A (ja) * 2004-12-21 2006-07-06 Fujitsu Ltd 半導体メモリ
JP2008108297A (ja) * 2006-10-23 2008-05-08 Toshiba Corp 不揮発性半導体記憶装置
JP2009283127A (ja) * 2001-07-04 2009-12-03 Renesas Technology Corp 半導体装置
US7692943B2 (en) 2002-12-27 2010-04-06 Renesas Technology Corp. Semiconductor memory device layout comprising high impurity well tap areas for supplying well voltages to N wells and P wells
US7710764B2 (en) 2001-07-04 2010-05-04 Renesas Technology Corp. Semiconductor memory cells with shared p-type well
WO2011067892A1 (fr) * 2009-12-03 2011-06-09 パナソニック株式会社 Dispositif de mémoire à semi-conducteurs

Families Citing this family (58)

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FR2528613B1 (fr) * 1982-06-09 1991-09-20 Hitachi Ltd Memoire a semi-conducteurs
JPS6142795A (ja) * 1984-08-03 1986-03-01 Toshiba Corp 半導体記憶装置の行デコ−ダ系
US4692923A (en) * 1984-09-28 1987-09-08 Ncr Corporation Fault tolerant memory
US4698812A (en) * 1986-03-03 1987-10-06 Unisys Corporation Memory system employing a zero DC power gate array for error correction
US4719627A (en) * 1986-03-03 1988-01-12 Unisys Corporation Memory system employing a low DC power gate array for error correction
JPS63175300A (ja) * 1987-01-16 1988-07-19 Hitachi Ltd 半導体集積回路装置
JP2629697B2 (ja) * 1987-03-27 1997-07-09 日本電気株式会社 半導体記憶装置
JP2684365B2 (ja) * 1987-04-24 1997-12-03 株式会社日立製作所 半導体記憶装置
JPS63285800A (ja) * 1987-05-19 1988-11-22 Fujitsu Ltd 半導体メモリ装置
JPH0821238B2 (ja) * 1987-11-12 1996-03-04 三菱電機株式会社 半導体記憶装置
JPH01171199A (ja) * 1987-12-25 1989-07-06 Mitsubishi Electric Corp 半導体メモリ
US4899342A (en) * 1988-02-01 1990-02-06 Thinking Machines Corporation Method and apparatus for operating multi-unit array of memories
US4868790A (en) * 1988-04-28 1989-09-19 Texas Instruments Incorporated Reference circuit for integrated memory arrays having virtual ground connections
US4920537A (en) * 1988-07-05 1990-04-24 Darling Andrew S Method and apparatus for non-intrusive bit error rate testing
US5058115A (en) * 1989-03-10 1991-10-15 International Business Machines Corp. Fault tolerant computer memory systems and components employing dual level error correction and detection with lock-up feature
US5148397A (en) * 1989-03-16 1992-09-15 Oki Electric Industry Co. Ltd. Semiconductor memory with externally controlled dummy comparator
JPH0814985B2 (ja) * 1989-06-06 1996-02-14 富士通株式会社 半導体記憶装置
JPH0734314B2 (ja) * 1989-07-13 1995-04-12 株式会社東芝 半導体記憶装置
KR920007909B1 (ko) * 1989-11-18 1992-09-19 삼성전자 주식회사 램 테스트시 고속 기록방법
US5134616A (en) * 1990-02-13 1992-07-28 International Business Machines Corporation Dynamic ram with on-chip ecc and optimized bit and word redundancy
US5307356A (en) * 1990-04-16 1994-04-26 International Business Machines Corporation Interlocked on-chip ECC system
US5117389A (en) * 1990-09-05 1992-05-26 Macronix International Co., Ltd. Flat-cell read-only-memory integrated circuit
US5142496A (en) * 1991-06-03 1992-08-25 Advanced Micro Devices, Inc. Method for measuring VT 's less than zero without applying negative voltages
US6222762B1 (en) 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
JP2730375B2 (ja) * 1992-01-31 1998-03-25 日本電気株式会社 半導体メモリ
US5657332A (en) * 1992-05-20 1997-08-12 Sandisk Corporation Soft errors handling in EEPROM devices
JP3236105B2 (ja) * 1993-03-17 2001-12-10 富士通株式会社 不揮発性半導体記憶装置及びその動作試験方法
US5392245A (en) * 1993-08-13 1995-02-21 Micron Technology, Inc. Redundancy elements using thin film transistors (TFTs)
US5309389A (en) * 1993-08-27 1994-05-03 Honeywell Inc. Read-only memory with complementary data lines
TW312763B (fr) * 1995-04-05 1997-08-11 Siemens Ag
US5898638A (en) * 1997-03-11 1999-04-27 Micron Technology, Inc. Latching wordline driver for multi-bank memory
US5909449A (en) * 1997-09-08 1999-06-01 Invox Technology Multibit-per-cell non-volatile memory with error detection and correction
US6061551A (en) 1998-10-21 2000-05-09 Parkervision, Inc. Method and system for down-converting electromagnetic signals
US9325556B2 (en) 1998-10-21 2016-04-26 Parkervision, Inc. Methods and systems for down-converting a signal
US6046958A (en) * 1999-01-11 2000-04-04 Micron Technology, Inc. Latching wordline driver for multi-bank memory
US6574746B1 (en) * 1999-07-02 2003-06-03 Sun Microsystems, Inc. System and method for improving multi-bit error protection in computer memory systems
JP2002109878A (ja) * 2000-09-29 2002-04-12 Oki Electric Ind Co Ltd シリアルアクセスメモリ
US7012835B2 (en) 2003-10-03 2006-03-14 Sandisk Corporation Flash memory data correction and scrub techniques
US7173852B2 (en) * 2003-10-03 2007-02-06 Sandisk Corporation Corrected data storage and handling methods
JP2005203064A (ja) * 2004-01-19 2005-07-28 Toshiba Corp 半導体記憶装置
US7177212B2 (en) * 2004-01-23 2007-02-13 Agere Systems Inc. Method and apparatus for reducing leakage current in a read only memory device using shortened precharge phase
JP4413091B2 (ja) * 2004-06-29 2010-02-10 株式会社ルネサステクノロジ 半導体装置
US7395404B2 (en) * 2004-12-16 2008-07-01 Sandisk Corporation Cluster auto-alignment for storing addressable data packets in a non-volatile memory array
US7315916B2 (en) * 2004-12-16 2008-01-01 Sandisk Corporation Scratch pad block
JP4846384B2 (ja) * 2006-02-20 2011-12-28 株式会社東芝 半導体記憶装置
US7716538B2 (en) * 2006-09-27 2010-05-11 Sandisk Corporation Memory with cell population distribution assisted read margining
US7886204B2 (en) * 2006-09-27 2011-02-08 Sandisk Corporation Methods of cell population distribution assisted read margining
US7477547B2 (en) * 2007-03-28 2009-01-13 Sandisk Corporation Flash memory refresh techniques triggered by controlled scrub data reads
US7573773B2 (en) * 2007-03-28 2009-08-11 Sandisk Corporation Flash memory with data refresh triggered by controlled scrub data reads
US8687421B2 (en) 2011-11-21 2014-04-01 Sandisk Technologies Inc. Scrub techniques for use with dynamic read
US8954824B2 (en) * 2012-02-28 2015-02-10 Micron Technology, Inc. Error detection or correction of stored signals after one or more heat events in one or more memory devices
US9230689B2 (en) 2014-03-17 2016-01-05 Sandisk Technologies Inc. Finding read disturbs on non-volatile memories
US9552171B2 (en) 2014-10-29 2017-01-24 Sandisk Technologies Llc Read scrub with adaptive counter management
US9978456B2 (en) 2014-11-17 2018-05-22 Sandisk Technologies Llc Techniques for reducing read disturb in partially written blocks of non-volatile memory
US9349479B1 (en) 2014-11-18 2016-05-24 Sandisk Technologies Inc. Boundary word line operation in nonvolatile memory
US9449700B2 (en) 2015-02-13 2016-09-20 Sandisk Technologies Llc Boundary word line search and open block read methods with reduced read disturb
US9653154B2 (en) 2015-09-21 2017-05-16 Sandisk Technologies Llc Write abort detection for multi-state memories
KR20180073129A (ko) * 2016-12-22 2018-07-02 에스케이하이닉스 주식회사 에러 정정 코드 회로를 갖는 반도체 메모리 장치

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US4345328A (en) * 1980-06-30 1982-08-17 Sperry Corporation ECC Check bit generation using through checking parity bits
JPS6014439B2 (ja) * 1980-07-08 1985-04-13 松下電器産業株式会社 リ−ドオンリメモリ回路
JPS5730192A (en) * 1980-07-29 1982-02-18 Fujitsu Ltd Sense amplifying circuit
JPS5766587A (en) * 1980-10-09 1982-04-22 Fujitsu Ltd Static semiconductor storage device
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Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6046000A (ja) * 1983-08-23 1985-03-12 Nec Corp ビット訂正付きプログラマブルリ−ドオンリィメモリ
JPS6069900A (ja) * 1983-09-22 1985-04-20 Seiko Epson Corp リ−ドオンリ−メモリ−
JPS60201599A (ja) * 1984-03-26 1985-10-12 Hitachi Ltd 半導体集積回路装置
JPH0582000B2 (fr) * 1984-03-26 1993-11-17 Hitachi Ltd
JPS61123100A (ja) * 1984-11-20 1986-06-10 Fujitsu Ltd 半導体記憶装置
JPS6246357A (ja) * 1985-08-23 1987-02-28 Hitachi Vlsi Eng Corp 半導体記憶装置
JP2009283127A (ja) * 2001-07-04 2009-12-03 Renesas Technology Corp 半導体装置
US7710764B2 (en) 2001-07-04 2010-05-04 Renesas Technology Corp. Semiconductor memory cells with shared p-type well
JP2003077294A (ja) * 2001-08-31 2003-03-14 Mitsubishi Electric Corp メモリ回路
US7692943B2 (en) 2002-12-27 2010-04-06 Renesas Technology Corp. Semiconductor memory device layout comprising high impurity well tap areas for supplying well voltages to N wells and P wells
JP2006179057A (ja) * 2004-12-21 2006-07-06 Fujitsu Ltd 半導体メモリ
JP2008108297A (ja) * 2006-10-23 2008-05-08 Toshiba Corp 不揮発性半導体記憶装置
WO2011067892A1 (fr) * 2009-12-03 2011-06-09 パナソニック株式会社 Dispositif de mémoire à semi-conducteurs
US8687440B2 (en) 2009-12-03 2014-04-01 Panasonic Corporation Semiconductor memory device

Also Published As

Publication number Publication date
DE3305056C2 (de) 1994-05-11
FR2522183A1 (fr) 1983-08-26
GB2157038A (en) 1985-10-16
KR900004813B1 (ko) 1990-07-07
HK69987A (en) 1987-10-02
US4703453A (en) 1987-10-27
GB8301289D0 (en) 1983-02-16
US4817052A (en) 1989-03-28
GB2157038B (en) 1986-07-02
FR2521761B1 (fr) 1990-12-28
KR840003894A (ko) 1984-10-04
GB2116389A (en) 1983-09-21
FR2522183B1 (fr) 1989-12-15
IT1161895B (it) 1987-03-18
IT8319579A1 (it) 1984-08-14
DE3305056A1 (de) 1983-08-25
GB2116389B (en) 1986-05-21
GB8510570D0 (en) 1985-05-30
FR2521761A1 (fr) 1983-08-19
IT8319579A0 (it) 1983-02-14

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