JPS5577083A - Semiconductor memory unit - Google Patents

Semiconductor memory unit

Info

Publication number
JPS5577083A
JPS5577083A JP15036578A JP15036578A JPS5577083A JP S5577083 A JPS5577083 A JP S5577083A JP 15036578 A JP15036578 A JP 15036578A JP 15036578 A JP15036578 A JP 15036578A JP S5577083 A JPS5577083 A JP S5577083A
Authority
JP
Japan
Prior art keywords
sense amplifier
amplifier circuit
input information
bit lines
cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15036578A
Other languages
Japanese (ja)
Inventor
Toshio Ichiyama
Makoto Taniguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP15036578A priority Critical patent/JPS5577083A/en
Publication of JPS5577083A publication Critical patent/JPS5577083A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To increase the input information of a sense amplifier circuit by connecting bit lines, divided into several, to memory cells and by controlling connections between those bit lines and the sense amplifier circuit through switching transistors by a signal corresponding to an address signal. CONSTITUTION:Symmetrical memory cells MC1, MC2... selected by symmetric word lines WL1, WL2... are connected to respectively-divided symmetric bit lines BL1, BL2..., which are symmetrically connected to sense amplifier circuit A in parallel by way of switching transistors Tr5, Tr6... controlled by address signals respectively. Therefore, ones cell MC1, etc., is selected, input information to circuit A is in proprotion to the ratio of storage capacity C1 to the sum of floating capacities C7 and C11, and greater than that when cells are connected in series, so that even if cells would increase in number, the input information applied to the sense amplifier circuit can be increased. Further, the designing of a pattern is simplified because pitches in terms of the pattern designing of the sense amplifier circuit can be increased.
JP15036578A 1978-12-04 1978-12-04 Semiconductor memory unit Pending JPS5577083A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15036578A JPS5577083A (en) 1978-12-04 1978-12-04 Semiconductor memory unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15036578A JPS5577083A (en) 1978-12-04 1978-12-04 Semiconductor memory unit

Publications (1)

Publication Number Publication Date
JPS5577083A true JPS5577083A (en) 1980-06-10

Family

ID=15495394

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15036578A Pending JPS5577083A (en) 1978-12-04 1978-12-04 Semiconductor memory unit

Country Status (1)

Country Link
JP (1) JPS5577083A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6134792A (en) * 1984-07-25 1986-02-19 Toshiba Corp Semiconductor memory device
US4606010A (en) * 1981-10-23 1986-08-12 Tokyo Shibaura Denki Kabushiki Kaisha Dynamic memory device
JPS61242396A (en) * 1985-04-19 1986-10-28 Nec Corp Semiconductor memory
US4627031A (en) * 1985-01-07 1986-12-02 Thomson Components-Mostek Corporation CMOS memory arrangement
US4636988A (en) * 1985-01-07 1987-01-13 Thomson Components-Mostek Corporation CMOS memory arrangement with reduced data line compacitance
US4703453A (en) * 1982-02-15 1987-10-27 Hitachi, Ltd. Semiconductor memory with an improved dummy cell arrangement and with a built-in error correcting code circuit

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54149532A (en) * 1978-05-17 1979-11-22 Nec Corp Semiconductor memory unit
JPS54158827A (en) * 1978-06-05 1979-12-15 Mitsubishi Electric Corp Semiconductor integrated circuit
JPS5548895A (en) * 1978-09-29 1980-04-08 Siemens Ag Device for reading and reproducing information stored in one transistor memory element

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54149532A (en) * 1978-05-17 1979-11-22 Nec Corp Semiconductor memory unit
JPS54158827A (en) * 1978-06-05 1979-12-15 Mitsubishi Electric Corp Semiconductor integrated circuit
JPS5548895A (en) * 1978-09-29 1980-04-08 Siemens Ag Device for reading and reproducing information stored in one transistor memory element

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4606010A (en) * 1981-10-23 1986-08-12 Tokyo Shibaura Denki Kabushiki Kaisha Dynamic memory device
US4703453A (en) * 1982-02-15 1987-10-27 Hitachi, Ltd. Semiconductor memory with an improved dummy cell arrangement and with a built-in error correcting code circuit
US4817052A (en) * 1982-02-15 1989-03-28 Hitachi, Ltd. Semiconductor memory with an improved dummy cell arrangement and with a built-in error correcting code circuit
JPS6134792A (en) * 1984-07-25 1986-02-19 Toshiba Corp Semiconductor memory device
US4627031A (en) * 1985-01-07 1986-12-02 Thomson Components-Mostek Corporation CMOS memory arrangement
US4636988A (en) * 1985-01-07 1987-01-13 Thomson Components-Mostek Corporation CMOS memory arrangement with reduced data line compacitance
JPS61242396A (en) * 1985-04-19 1986-10-28 Nec Corp Semiconductor memory

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