HK69987A - A semiconductor memory - Google Patents

A semiconductor memory

Info

Publication number
HK69987A
HK69987A HK699/87A HK69987A HK69987A HK 69987 A HK69987 A HK 69987A HK 699/87 A HK699/87 A HK 699/87A HK 69987 A HK69987 A HK 69987A HK 69987 A HK69987 A HK 69987A
Authority
HK
Hong Kong
Prior art keywords
semiconductor memory
semiconductor
memory
Prior art date
Application number
HK699/87A
Other languages
English (en)
Inventor
Takashi Shinoda
Osamu Sakai
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of HK69987A publication Critical patent/HK69987A/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1076—Parity data used in redundant arrays of independent storages, e.g. in RAID systems
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G11C17/126—Virtual ground arrays

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Memory System (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
HK699/87A 1982-02-15 1987-09-24 A semiconductor memory HK69987A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57021130A JPS58139399A (ja) 1982-02-15 1982-02-15 半導体記憶装置

Publications (1)

Publication Number Publication Date
HK69987A true HK69987A (en) 1987-10-02

Family

ID=12046302

Family Applications (1)

Application Number Title Priority Date Filing Date
HK699/87A HK69987A (en) 1982-02-15 1987-09-24 A semiconductor memory

Country Status (8)

Country Link
US (2) US4703453A (fr)
JP (1) JPS58139399A (fr)
KR (1) KR900004813B1 (fr)
DE (1) DE3305056C2 (fr)
FR (2) FR2521761B1 (fr)
GB (2) GB2116389B (fr)
HK (1) HK69987A (fr)
IT (1) IT1161895B (fr)

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US5309389A (en) * 1993-08-27 1994-05-03 Honeywell Inc. Read-only memory with complementary data lines
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US5909449A (en) * 1997-09-08 1999-06-01 Invox Technology Multibit-per-cell non-volatile memory with error detection and correction
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US9325556B2 (en) 1998-10-21 2016-04-26 Parkervision, Inc. Methods and systems for down-converting a signal
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JP4484124B2 (ja) * 2001-07-04 2010-06-16 株式会社ルネサステクノロジ 半導体装置
JP4877894B2 (ja) 2001-07-04 2012-02-15 ルネサスエレクトロニクス株式会社 半導体装置
JP2003077294A (ja) * 2001-08-31 2003-03-14 Mitsubishi Electric Corp メモリ回路
JP4418153B2 (ja) 2002-12-27 2010-02-17 株式会社ルネサステクノロジ 半導体装置
US7173852B2 (en) * 2003-10-03 2007-02-06 Sandisk Corporation Corrected data storage and handling methods
US7012835B2 (en) * 2003-10-03 2006-03-14 Sandisk Corporation Flash memory data correction and scrub techniques
JP2005203064A (ja) * 2004-01-19 2005-07-28 Toshiba Corp 半導体記憶装置
US7177212B2 (en) * 2004-01-23 2007-02-13 Agere Systems Inc. Method and apparatus for reducing leakage current in a read only memory device using shortened precharge phase
JP4413091B2 (ja) * 2004-06-29 2010-02-10 株式会社ルネサステクノロジ 半導体装置
US7315916B2 (en) * 2004-12-16 2008-01-01 Sandisk Corporation Scratch pad block
US7395404B2 (en) * 2004-12-16 2008-07-01 Sandisk Corporation Cluster auto-alignment for storing addressable data packets in a non-volatile memory array
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JP4846384B2 (ja) * 2006-02-20 2011-12-28 株式会社東芝 半導体記憶装置
US7716538B2 (en) * 2006-09-27 2010-05-11 Sandisk Corporation Memory with cell population distribution assisted read margining
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JP2008108297A (ja) * 2006-10-23 2008-05-08 Toshiba Corp 不揮発性半導体記憶装置
US7477547B2 (en) * 2007-03-28 2009-01-13 Sandisk Corporation Flash memory refresh techniques triggered by controlled scrub data reads
US7573773B2 (en) * 2007-03-28 2009-08-11 Sandisk Corporation Flash memory with data refresh triggered by controlled scrub data reads
JP2013033560A (ja) * 2009-12-03 2013-02-14 Panasonic Corp 半導体記憶装置
US8687421B2 (en) 2011-11-21 2014-04-01 Sandisk Technologies Inc. Scrub techniques for use with dynamic read
US8954824B2 (en) * 2012-02-28 2015-02-10 Micron Technology, Inc. Error detection or correction of stored signals after one or more heat events in one or more memory devices
US9230689B2 (en) 2014-03-17 2016-01-05 Sandisk Technologies Inc. Finding read disturbs on non-volatile memories
US9552171B2 (en) 2014-10-29 2017-01-24 Sandisk Technologies Llc Read scrub with adaptive counter management
US9978456B2 (en) 2014-11-17 2018-05-22 Sandisk Technologies Llc Techniques for reducing read disturb in partially written blocks of non-volatile memory
US9349479B1 (en) 2014-11-18 2016-05-24 Sandisk Technologies Inc. Boundary word line operation in nonvolatile memory
US9449700B2 (en) 2015-02-13 2016-09-20 Sandisk Technologies Llc Boundary word line search and open block read methods with reduced read disturb
US9653154B2 (en) 2015-09-21 2017-05-16 Sandisk Technologies Llc Write abort detection for multi-state memories
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Also Published As

Publication number Publication date
GB2157038B (en) 1986-07-02
KR900004813B1 (ko) 1990-07-07
IT8319579A0 (it) 1983-02-14
GB8510570D0 (en) 1985-05-30
DE3305056C2 (de) 1994-05-11
IT1161895B (it) 1987-03-18
US4817052A (en) 1989-03-28
GB2116389B (en) 1986-05-21
FR2522183B1 (fr) 1989-12-15
DE3305056A1 (de) 1983-08-25
GB2157038A (en) 1985-10-16
FR2521761A1 (fr) 1983-08-19
IT8319579A1 (it) 1984-08-14
GB8301289D0 (en) 1983-02-16
US4703453A (en) 1987-10-27
JPS58139399A (ja) 1983-08-18
KR840003894A (ko) 1984-10-04
FR2522183A1 (fr) 1983-08-26
GB2116389A (en) 1983-09-21
FR2521761B1 (fr) 1990-12-28

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)